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9018060 Variable capacitance sensors and methods of making the same  
A variable capacitance sensor includes a first conductive electrode comprising electrically interconnected first conductive sheets; a second conductive electrode comprising electrically...
9006061 Vertical metal insulator metal capacitor  
A method of forming a capacitor comprises forming a first electrode of the capacitor over a substrate. The first electrode includes a bottom conductive plane and a plurality of first vertical...
8999783 Method for producing a semiconductor device with a vertical dielectric layer  
A method for producing a semiconductor device is disclosed. The method includes providing a semiconductor body having a first surface, and a second surface opposite the first surface, producing a...
8994144 Semiconductor device and method for fabricating the same  
A semiconductor device includes a first isolation layer formed in a trench in a substrate. The isolation layer includes a first oxide layer formed in the trench and a second oxide layer formed...
8993396 Capacitor and method for fabricating the same  
A method for fabricating a capacitor includes forming a mold structure over a substrate, wherein the mold structure has a plurality of open parts and has a mold layer stacked with a support layer;...
8975133 Capacitors positioned at the device level in an integrated circuit product and methods of making such capacitors  
One illustrative integrated circuit product disclosed herein includes a metal-1 metallization layer positioned above a semiconducting substrate, a capacitor positioned between a surface of the...
8932933 Methods of forming hydrophobic surfaces on semiconductor device structures, methods of forming semiconductor device structures, and semiconductor device structures  
A method of forming a hydrophobic surface on a semiconductor device structure. The method comprises forming at least one structure having at least one exposed surface comprising titanium atoms....
8860113 Creating deep trenches on underlying substrate  
A semiconductor structure is disclosed in which, in an embodiment, a first substrate includes at least one buried plate disposed in an upper part of the first substrate. Each of the at least one...
8853048 Streamlined process for vertical semiconductor devices  
The present disclosure provides a streamlined approach to forming vertically structured devices such as deep trench capacitors. Trenches and a contact plate bridging the trenches are formed using...
8853033 Method for fabricating semiconductor device  
A method for fabricating a semiconductor device includes: sequentially forming an n− type epitaxial layer, a p type epitaxial layer, and a first n+ region on a first surface of an n+ type silicon...
8835330 Integrated circuit including DRAM and SRAM/logic  
A method includes providing a substrate having an N+ type layer; forming a P type region in the N+ type layer disposed within the N+ type layer; forming a first deep trench isolation structure...
8835250 FinFET trench circuit  
A finFET trench circuit is disclosed. FinFETs are integrated with trench capacitors by employing a trench top oxide over a portion of the trench conductor. A passing gate is then disposed over the...
8815679 Structure of metal gate MIM  
First and second multi-layer structures are formed within respective openings in at least one dielectric layer formed over a semiconductor substrate. The first multi-layer structure comprises a...
8815695 Methods to improve leakage for ZrO2 based high K MIM capacitor  
A first electrode layer for a Metal-Insulator-Metal (MIM) DRAM capacitor is formed wherein the first electrode layer contains a conductive base layer and conductive metal oxide layer. A second...
8815677 Method of processing MIM capacitors to reduce leakage current  
A method for processing dielectric materials and electrodes to decrease leakage current is disclosed. The method includes a post dielectric anneal treatment in an oxidizing atmosphere to reduce...
8796088 Semiconductor device and method of fabricating the same  
A semiconductor device and a method of fabricating the semiconductor device is provided. In the method, a semiconductor substrate defining a device region and an outer region at a periphery of the...
8779491 3D via capacitor with a floating conductive plate for improved reliability  
The present invention provides a 3D via capacitor and a method for forming the same. The capacitor includes an insulating layer on a substrate. The insulating layer has a via having sidewalls and...
8765535 Method for manufacturing a capacitor having a yttrium oxide layer  
In the method for manufacturing a semiconductor device of the invention, a bonding layer is formed over a substrate, an insulating film and a storage capacitor portion lower electrode are formed...
8766410 Embedded DRAM integrated circuits with extremely thin silicon-on-insulator pass transistors  
Integrated circuits having combined memory and logic functions are provided. In one aspect, an integrated circuit is provided. The integrated circuit comprises: a substrate comprising a silicon...
8766232 Semiconductor memory devices having variable resistor and methods of fabricating the same  
According to a method of fabricating the semiconductor memory device, a contact plug can be protected while mold openings are formed. A semiconductor memory device may include a mold dielectric...
8748258 Method and structure for forming on-chip high quality capacitors with ETSOI transistors  
An ETSOI transistor and a capacitor are formed respectively in a transistor and capacitor region thereof by etching through an ETSOI and thin BOX layers in a replacement gate HK/MG flow. The...
8710567 Semiconductor device and manufacturing method thereof  
The semiconductor device of the present invention includes a silicon substrate having a logic region and a RAM region, an NMOS transistor formed in the logic region, and an NMOS transistor formed...
8709890 Method and structure for forming ETSOI capacitors, diodes, resistors and back gate contacts  
An ETSOI transistor and a combination of capacitors, junction diodes, bank end contacts and resistors are respectively formed in a transistor and capacitor region thereof by etching through an...
8698322 Adhesive-bonded substrates in a multi-chip module  
A multi-chip module (MCM) is described in which at least two substrates are mechanically coupled by an adhesive layer that maintains alignment and a zero (or near zero) spacing between proximity...
8697534 Capacitor to be incorporated in wiring substrate, method for manufacturing the capacitor, and wiring substrate  
A wiring substrate in which a capacitor is provided, the capacitor comprising a capacitor body including a plurality of dielectric layers and internal electrode layers provided between the...
8691656 Methods of forming an interconnect between a substrate bit line contact and a bit line in DRAM  
The invention includes methods of electrically interconnecting different elevation conductive structures, methods of forming capacitors, methods of forming an interconnect between a substrate bit...
8680599 Semiconductor device and method of manufacturing the same  
To provide a more reliable semiconductor device including a lower-cost and more reliable capacitor and a method of manufacturing the same. This manufacturing method comprises the steps of:...
8673719 DRAM with a nanowire access transistor  
A semiconductor nanowire is formed integrally with a wraparound semiconductor portion that contacts sidewalls of a conductive cap structure located at an upper portion of a deep trench and...
8658494 Dual contact metallization including electroless plating in a semiconductor device  
Contact elements of sophisticated semiconductor devices may be formed for gate electrode structures and for drain and source regions in separate process sequences in order to apply electroless...
8652920 Substrate with embedded patterned capacitance  
A process for forming a laminate with capacitance and the laminate formed thereby. The process includes the steps of providing a substrate and laminating a conductive foil on the substrate wherein...
8633036 Manufacturing method of ferroelectric capacitor  
Provided is a ferroelectric memory including a silicon substrate, a transistor formed on the silicon substrate, and a ferroelectric capacitor formed above the transistor. The ferroelectric...
8623725 Methods of forming capacitors  
A method of forming a capacitor includes providing material having an opening therein over a node location on a substrate. A shield is provided within and across the opening, with a void being...
8617949 Capacitor and method for making same  
A system-on-chip device comprises a first capacitor in a first region, a second capacitor in a second region, and may further comprise a third capacitor in a third region, and any additional...
8592979 Semiconductor device conductive pattern structures and methods of manufacturing the same  
A conductive pattern structure includes a first insulating interlayer on a substrate, metal wiring on the first insulating interlayer, a second insulating interlayer on the metal wiring, and first...
8587047 Capacitor formation for a pumping circuit  
A capacitor structure for a pumping circuit includes a substrate, a U-shaped bottom electrode in the substrate, a T-shaped top electrode in the substrate and a dielectric layer disposed between...
8586444 Creating deep trenches on underlying substrate  
A semiconductor structure and method of fabricating the same are disclosed. In an embodiment, the structure includes a first substrate having a buried plate or plates in the substrate. Each buried...
8530330 Method for manufacturing a semiconductor device capable of preventing the decrease of the width of an active region  
A method for manufacturing a semiconductor device that can prevent the loss of an isolation structure and that can also stably form epi-silicon layers is described. The method for manufacturing a...
8530312 Vertical devices and methods of forming  
Vertical devices and methods of forming the same are provided. One example method of forming a vertical device can include forming a trench in a semiconductor structure, and partially filling the...
8492819 FET eDRAM trench self-aligned to buried strap  
A structure and method of making a field effect transistor (FET) embedded dynamic random access memory (eDRAM) cell array, which includes: a buried silicon strap extending into a buried oxide...
8492816 Deep trench decoupling capacitor  
Solutions for forming a silicided deep trench decoupling capacitor are disclosed. In one aspect, a semiconductor structure includes a trench capacitor within a silicon substrate, the trench...
8486800 Trench capacitor and method for producing the same  
A method of fabricating a trench capacitor, and a trench capacitor fabricated thereby, are disclosed. The method involves the use of a vacuum impregnation process for a sol-gel film, to facilitate...
8486784 Vertical semiconductor device and method of manufacturing the same  
A vertical semiconductor device with improved junction profile and a method of manufacturing the same are provided. The vertical semiconductor device includes a pillar vertically extended from a...
8470668 Method for forming pillar type capacitor of semiconductor device  
An embodiment of the invention includes a pillar type capacitor where a pillar is formed over an upper portion of a storage node contact. A bottom electrode is formed over sidewalls of the pillar,...
8470680 Substrate with embedded patterned capacitance  
A process for forming a laminate with capacitance and the laminate formed thereby. The process includes the steps of providing a substrate and laminating a conductive foil on the substrate wherein...
8455360 Method for fabricating storage node of semiconductor device  
A method for fabricating a storage node of a semiconductor device includes forming a sacrificial dielectric pattern with a storage node hole on a substrate, forming a support layer on the...
8445367 Methods of manufacturing semiconductor devices  
In a method of manufacturing a semiconductor device, a plurality of sacrificial layers and a plurality of insulating interlayers are repeatedly and alternately on a substrate. The insulating...
8431981 Semiconductor memory device having vertical transistor and buried bit line and method for fabricating the same  
A semiconductor memory device includes an active region protruding upward from a substrate, wherein the active region is arranged next to a trench on the substrate, a first impurity region formed...
8410536 Substrate with embedded patterned capacitance  
A process for forming a laminate with capacitance and the laminate formed thereby. The process includes the steps of providing a substrate and laminating a conductive foil on the substrate wherein...
8399304 Thin film capacitor and method of fabrication thereof  
Methods for fabricating a capacitor are provided. In the methods, a dielectric may be formed on a metal (e.g. nickel) substrate, and a copper electrode is formed thereon, followed by the thinning...
8394696 Semiconductor device with reduced capacitance tolerance value  
A semiconductor device includes a capacitance, the numerical value of which is relevant for a device function. The capacitance is formed from a parallel connection of at least a first and a second...