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7638828 Embedded capacitor  
The invention concerns a capacitor whereof one first electrode consists of a highly doped active region (D) of a semiconductor component (T) formed on one side of a surface of a semiconductor body,...
7638390 Manufacturing method of static random access memory  
A static random access memory (SRAM) cell structure at least comprising a substrate, a transistor, an upper electrode and a capacitor dielectric layer. A device isolation structure is set up in the...
7626257 Semiconductor devices and methods of manufacture thereof  
Vertically stacked integrated circuits and methods of fabrication thereof are disclosed. Deep vias that provide vertical electrical connection for vertically stacked integrated circuits are formed...
7621041 Methods for forming multilayer structures  
The present invention relates to methods of forming multilayer structures and the structures themselves. In one embodiment, a method of forming a multilayer structure comprises: providing a...
7608881 Thin-film device and method of manufacturing same  
A thin-film device comprises: a substrate; a flattening film made of an insulating material and disposed on the substrate; and a capacitor provided on the flattening film. The capacitor...
7595250 Semiconductor device and method of manufacturing the same  
There are provided the steps of forming an insulating film over a semiconductor substrate, forming sequentially a first conductive film, a dielectric film, a second conductive film on the...
7592657 Semiconductor device and method of manufacturing the same  
According to the present invention, a method of fabricating a semiconductor device is provided including forming a first interlayer insulating film 11 , a crystalline conductive film 21 , a first...
7585723 Method for fabricating capacitor  
A method for fabricating a semiconductor device includes forming an insulation structure over a substrate structure including contact plugs, etching the insulation structure to form opening regions...
7582525 Method for fabricating capacitor of semiconductor memory device using amorphous carbon  
A method for fabricating a semiconductor device is provided. The method includes: forming an inter-layer insulation layer on a substrate; forming storage node contact plugs penetrating into the...
7575971 Semiconductor device having a capacitor with a stepped cylindrical structure and method of manufacturing the same  
According to some embodiments, a capacitor includes a storage conductive pattern, a storage electrode having a complementary member enclosing a storage conductive pattern so as to complement an...
7572710 Methods of forming conductive contacts to source/drain regions and methods of forming local interconnects  
The invention comprises methods of forming a conductive contact to a source/drain region of a field effect transistor, and methods of forming local interconnects. In one implementation, a method of...
7563667 Method for fabricating semiconductor device  
In a method for forming a semiconductor device, a device isolation layer is formed in a capacitor region of a silicon substrate, and a bottom electrode and a dielectric layer are formed on the...
7563672 Methods of fabricating integrated circuit devices including metal-insulator-metal capacitors  
Integrated circuit devices including metal-insulator-metal (MIM) capacitors are provided. The MIM capacitors may include an upper electrode having first and second layers. The first layer of the...
7560795 Semiconductor device with a capacitor  
Embodiments relate to a semiconductor having a capacitor and a method of fabricating the same, that may be capable of simplifying a manufacturing process and increasing a capacitance of a...
7541656 Semiconductor devices with enlarged recessed gate electrodes  
A semiconductor device includes a semiconductor substrate having a recess therein. A gate insulator is disposed on the substrate in the recess. The device further includes a gate electrode...
7535046 Dielectric memory and manufacturing method thereof  
As an oxygen diffusion prevention layer, a multilayer film formed by a metal nitride and a noble metal element. As an interlayer insulation film on the oxygen diffusion prevention layer, a plasma...
7524724 Method of forming titanium nitride layer and method of fabricating capacitor using the same  
A method of fabricating a storage capacitor includes depositing a first titanium nitride layer on a dielectric layer using a chemical vapor deposition technique or an atomic layer deposition...
7525143 Dram device having capacitor  
In a DRAM device having a capacitor and a method thereof, the capacitor included in the device is characterized to have a lower electrode that passes through a plurality of interlayer insulating...
7514290 Chip-to-wafer integration technology for three-dimensional chip stacking  
This embodiment addresses a novel Chip-to-wafer chip lamination technique that provides low cost and high throughput. In the Chip-to-Chip process, using the temperature rise and utilizing...
7510930 Method for fabricating recessed gate MOS transistor device  
A method of fabricating self-aligned gate trench utilizing trench top oxide (TTO) poly spacer is disclosed. A semiconductor substrate having thereon a pad oxide layer and pad nitride layer is...
7504299 Folded node trench capacitor  
A trench capacitor is filled with a set of two or more storage plates by consecutively depositing layers of dielectric and conductor and making contact to the ground plates by etching an aperture...
7494871 Semiconductor memory devices and methods for forming the same  
A semiconductor memory device can include select transistors and cell transistors on a semiconductor substrate. An insulation layer covers the select transistors and the cell transistors. The bit...
7488641 Trench DRAM cell with vertical device and buried word lines  
A DRAM array having trench capacitor cells of potentially 4F 2 surface area (F being the photolithographic minimum feature width), and a process for fabricating such an array. The array has a...
7485909 Semiconductor device and method of manufacturing the same  
A semiconductor device includes a semiconductor substrate formed with a trench having a sidewall including a middle point. The trench includes a first part extending from a surface of the...
7473598 Method for forming stack capacitor  
A method for forming a stack capacitor includes providing a substrate with a bottom layer, a BPSG layer, a USG layer and a top layer thereon; using the top layer as a hard mask and the substrate as...
7470585 Integrated circuit and fabrication process  
An integrated circuit has at least one semiconductor device for storing charge that includes at least one elementary active component and at least one elementary storage capacitor. The device...
7468323 Method of forming high aspect ratio structures  
An etching process includes providing a dielectric first film on a substrate and a sacrificial second film on the dielectric first film. A conductive structure such as a container capacitor is...
7449391 Methods of forming plurality of capacitor devices  
The invention includes semiconductor constructions, and also includes methods of forming pluralities of capacitor devices. An exemplary method of the invention includes forming conductive storage...
7449382 Memory device and fabrication method thereof  
A memory device is disclosed. A substrate is provided. A plurality of pillars is disposed on the substrate. Each pillar has a plurality of epitaxial layers, has a first sidewall and a second...
7445987 Offset vertical device  
The present invention includes a method for forming a memory array and the memory array produced therefrom. Specifically, the memory array includes at least one first-type memory device, each of...
7442602 Methods of fabricating phase change memory cells having a cell diode and a bottom electrode self-aligned with each other  
Integrated circuit devices are provided having a vertical diode therein. The devices include an integrated circuit substrate and an insulating layer on the integrated circuit substrate. A contact...
7439130 Semiconductor device with capacitor and method for fabricating the same  
A method of fabricating a semiconductor device having a capacitor is provided. The method includes forming second, third, fourth, and fifth insulating layers on a first conductive layer formed in a...
7410863 Methods of forming and using memory cell structures  
A method of filling vias for a PCRAM cell with a metal is described. A PCRAM intermediate structure including a substrate, a first conductor, and an insulator through which a via extends has a...
7410864 Trench and a trench capacitor and method for forming the same  
A method for fabricating a trench includes providing a semiconductor substrate made of a semiconductor material. A trench is etched into a surface of the semiconductor substrate such that a trench...
7402486 Cylinder-type capacitor and storage device, and method(s) for fabricating the same  
A one cylinder storage device and a method for fabricating a capacitor are disclosed, realizing simplified fabrication by overexposure with a mask having a plurality of holes, in which the method...
7393742 Semiconductor device having a capacitor and a fabrication method thereof  
In a semiconductor device having a capacitor and a method of fabricating the same, the semiconductor device comprises a semiconductor substrate and an insulating layer on the semiconductor...
7390717 Trench power MOSFET fabrication using inside/outside spacers  
A fabrication process for a trench type power semiconductor device includes forming inside spacers over a semiconductor surface. Using the spacers as masks, trenches with gates are formed in the...
7390730 Method of fabricating a body capacitor for SOI memory  
A semiconductor structure having a body capacitance plate, which is formed with a process that assures that the body capacitance plate is self-aligned to both the source line (SL) diffusion and the...
7384852 Sub-lithographic gate length transistor using self-assembling polymers  
A semiconductor structure including at least one transistor located on a surface of a semiconductor substrate, wherein the at least one transistor has a sub-lithographic channel length, is...
7371645 Method of manufacturing a field effect transistor device with recessed channel and corner gate device  
Fabrication of recessed channel array transistors (RCAT) with a corner gate device includes forming pockets between a semiconductor fin that includes a gate groove and neighboring shallow trench...
7371589 Ferroelectric random access memory capacitor and method for manufacturing the same  
The method for manufacturing an FeRAM capacitor with a merged top electrode plate line (MTP) structure is employed to prevent a detrimental impact on the FeRAM and to secure a reliable FeRAM...
7354821 Methods of fabricating trench capacitors with insulating layer collars in undercut regions  
Trench capacitors that have insulating layer collars in undercut regions and methods of fabricating such trench capacitors are provided. Some methods of fabricating a trench capacitor include...
7354822 Method of forming a MOSFET with dual work function materials  
A vertical pass transistor used in a DRAM cell for maintaining a low total leakage current and providing adequate drive current is described together with a method of fabricating such a device. The...
7354823 Methods of forming integrated circuit devices having carbon nanotube electrodes therein  
An integrated circuit capacitor includes first and second electrodes and at least one dielectric layer extending between the first and second electrodes. The first electrode includes at least one...
7335554 Method for fabricating semiconductor  
A method for fabricating a semiconductor device includes forming a first trench by etching a substrate already provided with a storage node contact (SNC) region and a bit line contact (BLC) region,...
7332390 Semiconductor memory device and fabrication thereof  
A semiconductor memory device and fabrication method thereof. In a semiconductor memory device, each memory cell comprises a deep trench and a capacitor disposed on the lower portion thereof. A...
7332396 Semiconductor device with recessed trench and method of fabricating the same  
A semiconductor device with a recessed channel and a method of fabricating the same are provided. The semiconductor device comprises a substrate, a gate, a source, a drain, and a reverse spacer....
7326613 Methods of manufacturing semiconductor devices having elongated contact plugs  
A method of manufacturing a semiconductor device includes forming conductive structures on a substrate. Each of the conductive structures has a line shape that extends along a first direction...
7320912 Trench capacitors with buried isolation layer formed by an oxidation process and methods for manufacturing the same  
A method for forming a trench capacitor includes: removing a portion of the substrate to form a trench within the substrate; forming at a buried isolation layer within the substrate; forming in the...
7316951 Fabrication method for a trench capacitor having an insulation collar  
The present invention provides a fabrication method for a trench capacitor having an insulation collar ( 10 ) in a silicon substrate ( 1 ), having the steps of: providing a trench ( 5 ) in the...
Matches 1 - 50 out of 400 1 2 3 4 5 6 7 8 >