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7622351 |
Method of manufacturing semiconductor device and semiconductor device
A method of manufacturing a semiconductor device, includes: forming a first and a second trench regions adjacent from each other in a first conductivity type semiconductor base; forming a second...
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7615443 |
Method of forming finFET device
The invention discloses a method of forming a finFET device. A hard mask layer is formed on an active area of a semiconductor substrate. A portion of the hard mask layer is etched to form a recess....
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7611931 |
Semiconductor structures with body contacts and fabrication methods thereof
A semiconductor structure for a dynamic random access memory (DRAM) cell array that includes a plurality of vertical memory cells built on a semiconductor-on-insulator (SOI) wafer and a body...
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7608881 |
Thin-film device and method of manufacturing same
A thin-film device comprises: a substrate; a flattening film made of an insulating material and disposed on the substrate; and a capacitor provided on the flattening film. The capacitor...
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7598138 |
Semiconductor device manufacturing method
Provided is a semiconductor device manufacturing method including the steps of: forming an n-type impurity diffusion region by ion-implanting arsenic into a capacitor formation region of a silicon...
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7595236 |
Method for production of semiconductor device having a hole extending through a first insulating film, a second insulating film and a third insulating film
A short circuit with an adjacent hole is prevented. By enlarging a hole diameter in the lower part of the hole, a stable storage node is formed without causing a decrease in capacitance. Provided...
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7592216 |
Fabrication process of a semiconductor device having a capacitor
A method of manufacturing a semiconductor device includes forming a first trench in a capacitor device region of a semiconductor substrate, forming a capacitor insulation film over a sidewall...
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7586142 |
Semiconductor device having metal-insulator-metal capacitor and method of fabricating the same
A semiconductor device having a metal-insulator-metal (MIM) capacitor is provided and can include a lower line formed in a semiconductor substrate; a first interlayer insulating layer formed over...
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7582525 |
Method for fabricating capacitor of semiconductor memory device using amorphous carbon
A method for fabricating a semiconductor device is provided. The method includes: forming an inter-layer insulation layer on a substrate; forming storage node contact plugs penetrating into the...
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7579234 |
Method for fabricating memory device with recess channel MOS transistor
A method for fabricating line type recess channel MOS transistors utilizes a lithography process to form line type gate trenches in the line type recess channel MOS transistors before finishing a...
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7575971 |
Semiconductor device having a capacitor with a stepped cylindrical structure and method of manufacturing the same
According to some embodiments, a capacitor includes a storage conductive pattern, a storage electrode having a complementary member enclosing a storage conductive pattern so as to complement an...
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7572710 |
Methods of forming conductive contacts to source/drain regions and methods of forming local interconnects
The invention comprises methods of forming a conductive contact to a source/drain region of a field effect transistor, and methods of forming local interconnects. In one implementation, a method of...
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7572699 |
Process of forming an electronic device including fins and discontinuous storage elements
An electronic device can include a substrate including a fin lying between a first trench and a second trench, wherein the fin is no more than approximately 90 nm wide. The electronic device can...
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7569451 |
Method of fabricating an isolation shallow trench
A method of fabricating an isolation shallow trench contains providing a substrate with at least a deep trench, forming a cap layer on the upper portion of the deep trench, forming a crust layer on...
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7569450 |
Semiconductor capacitors in hot (hybrid orientation technology) substrates
A semiconductor structure and a method for forming the same. The semiconductor structure includes a semiconductor substrate. The semiconductor structure further includes an electrically insulating...
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7566614 |
Capacitor of semiconductor device and method of fabricating the same
Disclosed are a capacitor of a semiconductor device and a method of fabricating the same. The capacitor includes a capacitor top electrode, a capacitor bottom electrode aligned with a bottom...
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7564114 |
Semiconductor devices and methods of manufacture thereof
Semiconductor devices and methods of manufacture thereof are disclosed. A preferred embodiment comprises a method of forming an insulating material layer. The method includes forming an interface...
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7564086 |
Self-aligned, silicided, trench-based DRAM/eDRAM processes with improved retention
A DRAM cell in a substrate has a deep trench (DT) extending from a surface of the substrate into the substrate, a word line (WL) formed on the surface of the substrate adjacent the deep trench, and...
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7563672 |
Methods of fabricating integrated circuit devices including metal-insulator-metal capacitors
Integrated circuit devices including metal-insulator-metal (MIM) capacitors are provided. The MIM capacitors may include an upper electrode having first and second layers. The first layer of the...
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7563671 |
Method for forming trench capacitor and memory cell
A method for forming a trench capacitor and memory cell by providing a substrate on which a grid STI and a plurality of active regions covered by a hard mask layer are formed. A photoresist is...
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7563670 |
Method for etching single-crystal semiconductor selective to amorphous/polycrystalline semiconductor and structure formed by same
A method of forming a vertical DRAM device. A lower trench is filled with polycrystalline or amorphous semiconductor for a capacitor. An upper trench portion has exposed sidewalls of single-crystal...
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7563669 |
Integrated circuit with a trench capacitor structure and method of manufacture
An integrated circuit device having a capacitor structure. In one form of the invention, an integrated circuit device includes a capacitor structure formed along a surface of a semiconductor layer....
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7557002 |
Methods of forming transistor devices
Some embodiments include formation of at least one cavity in a first semiconductor material, followed by epitaxially growing a second semiconductor material over the first semiconductor material...
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7550359 |
Methods involving silicon-on-insulator trench memory with implanted plate
A method for fabricating silicon-on-insulator (SOI) trench memory includes forming a trench on a substrate, wherein a buried oxide layer is disposed on the substrate, a SOI layer is disposed on the...
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7547598 |
Method for fabricating capacitor in semiconductor device
A method for fabricating a capacitor in a semiconductor device includes forming a first insulation layer over a substrate, forming storage node contact plugs in the first insulation layer,...
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7541656 |
Semiconductor devices with enlarged recessed gate electrodes
A semiconductor device includes a semiconductor substrate having a recess therein. A gate insulator is disposed on the substrate in the recess. The device further includes a gate electrode...
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7535046 |
Dielectric memory and manufacturing method thereof
As an oxygen diffusion prevention layer, a multilayer film formed by a metal nitride and a noble metal element. As an interlayer insulation film on the oxygen diffusion prevention layer, a plasma...
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7531406 |
Method for fabricating an electrical component
An electrical component, such as a DRAM semiconductor memory or a field-effect transistor is fabricated. At least one capacitor having a dielectric ( 130 ) and at least one connection electrode (...
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7528035 |
Vertical trench memory cell with insulating ring
A method of forming a vertical transistor trench memory cell having an insulating ring is provided. The method includes forming a semiconductor material region in an etched portion of a...
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7525142 |
Semiconductor device including a conductive layer buried in an opening and method of manufacturing the same
A trench capacitor is formed in a semiconductor substrate with a capacitor insulating film. The trench has a conductive layer as storage node electrode buried in a trench. The conductive layer...
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7510930 |
Method for fabricating recessed gate MOS transistor device
A method of fabricating self-aligned gate trench utilizing trench top oxide (TTO) poly spacer is disclosed. A semiconductor substrate having thereon a pad oxide layer and pad nitride layer is...
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7494891 |
Trench capacitor with void-free conductor fill
A method forms a node dielectric in a bottle shaped trench and then deposits an initial conductor within the lower portion of the bottle shaped trench, such that a void is formed within the initial...
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7488642 |
Process for forming a buried plate
A method is provided for making a buried plate region in a semiconductor substrate. According to such method, a trench is a single-crystal semiconductor region of a substrate is etched to form a...
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7488641 |
Trench DRAM cell with vertical device and buried word lines
A DRAM array having trench capacitor cells of potentially 4F 2 surface area (F being the photolithographic minimum feature width), and a process for fabricating such an array. The array has a...
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7485921 |
Trench gate type MOS transistor semiconductor device
This semiconductor device comprises a first semiconductor layer of a first conductivity type, an epitaxial layer of a first conductivity type formed in the surface on the first semiconductor layer,...
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7479424 |
Method for fabricating an integrated circuit comprising a three-dimensional capacitor
A capacitor fabricated, within an integrated circuit, has at least two capacitive trenches extending within a dielectric material. A metal layer is produced which is embedded in the dielectric...
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7470585 |
Integrated circuit and fabrication process
An integrated circuit has at least one semiconductor device for storing charge that includes at least one elementary active component and at least one elementary storage capacitor. The device...
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7468323 |
Method of forming high aspect ratio structures
An etching process includes providing a dielectric first film on a substrate and a sacrificial second film on the dielectric first film. A conductive structure such as a container capacitor is...
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7459365 |
Method for fabricating a semiconductor component
The fabrication of a semiconductor component having a semiconductor body in which is arranged a very thin dielectric layer having sections which run in the vertical direction and which extend very...
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7449741 |
SRAM cell structure and manufacturing method thereof
A static random access memory (SRAM) cell structure at least comprising a substrate, a transistor, an upper electrode and a capacitor dielectric layer. A device isolation structure is set up in the...
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7449382 |
Memory device and fabrication method thereof
A memory device is disclosed. A substrate is provided. A plurality of pillars is disposed on the substrate. Each pillar has a plurality of epitaxial layers, has a first sidewall and a second...
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7449375 |
Fin semiconductor device and method for fabricating the same
A semiconductor device includes second to fourth semiconductor layers, a gate electrode, and an insulating film. The second semiconductor layer is formed on a first semiconductor layer and has a...
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7445988 |
Trench memory
A trench device and method for fabricating same are provided. The trench device has a collar with a first portion that is doped and a second portion that is undoped. Fabrication of the partially...
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7445987 |
Offset vertical device
The present invention includes a method for forming a memory array and the memory array produced therefrom. Specifically, the memory array includes at least one first-type memory device, each of...
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7445985 |
DRAM memory and method for fabricating a DRAM memory cell
A DRAM memory cell arrangement having memory cells each having a trench capacitor and a fin field-effect transistor or FinFET for addressing the trench capacitor. The memory cells are arranged in...
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7439130 |
Semiconductor device with capacitor and method for fabricating the same
A method of fabricating a semiconductor device having a capacitor is provided. The method includes forming second, third, fourth, and fifth insulating layers on a first conductive layer formed in a...
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7439128 |
Method of creating deep trench capacitor using a P+ metal electrode
The present invention comprises a method including the steps of providing a substrate; forming a trench in the substrate; forming a buried plate in the substrate about the trench; depositing a...
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7439112 |
Semiconductor device using partial SOI substrate and manufacturing method thereof
A semiconductor device manufacturing method includes selectively removing portions of a buried oxide layer and first semiconductor layer in an SOI substrate having the first semiconductor layer...
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7435643 |
Fabrication method of a dynamic random access memory
A dynamic random access memory (DRAM) cell is described, including a semiconductor pillar on a substrate, a capacitor on a lower portion of a sidewall of the pillar, and a vertical transistor on an...
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7432151 |
Semiconductor device and method for fabricating the same
A method for fabricating a semiconductor device that forms a capacitor and metal interconnection in the same level, simultaneously using a damascene process for forming a metal interconnection. A...
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