Patents in Class 438/243

Matches 51 - 100 out of 750

Match	Document	Document Title
51	7488641	Trench DRAM cell with vertical device and buried word lines A DRAM array having trench capacitor cells of potentially 4F 2 surface area (F being the photolithographic minimum feature width), and a process for fabricating such an array. The array has a...
52	7488642	Process for forming a buried plate A method is provided for making a buried plate region in a semiconductor substrate. According to such method, a trench is a single-crystal semiconductor region of a substrate is etched to form a...
53	7485921	Trench gate type MOS transistor semiconductor device This semiconductor device comprises a first semiconductor layer of a first conductivity type, an epitaxial layer of a first conductivity type formed in the surface on the first semiconductor layer,...
54	7479424	Method for fabricating an integrated circuit comprising a three-dimensional capacitor A capacitor fabricated, within an integrated circuit, has at least two capacitive trenches extending within a dielectric material. A metal layer is produced which is embedded in the dielectric...
55	7470585	Integrated circuit and fabrication process An integrated circuit has at least one semiconductor device for storing charge that includes at least one elementary active component and at least one elementary storage capacitor. The device...
56	7468323	Method of forming high aspect ratio structures An etching process includes providing a dielectric first film on a substrate and a sacrificial second film on the dielectric first film. A conductive structure such as a container capacitor is...
57	7459365	Method for fabricating a semiconductor component The fabrication of a semiconductor component having a semiconductor body in which is arranged a very thin dielectric layer having sections which run in the vertical direction and which extend very...
58	7449375	Fin semiconductor device and method for fabricating the same A semiconductor device includes second to fourth semiconductor layers, a gate electrode, and an insulating film. The second semiconductor layer is formed on a first semiconductor layer and has a...
59	7449382	Memory device and fabrication method thereof A memory device is disclosed. A substrate is provided. A plurality of pillars is disposed on the substrate. Each pillar has a plurality of epitaxial layers, has a first sidewall and a second...
60	7449741	SRAM cell structure and manufacturing method thereof A static random access memory (SRAM) cell structure at least comprising a substrate, a transistor, an upper electrode and a capacitor dielectric layer. A device isolation structure is set up in the...
61	7445985	DRAM memory and method for fabricating a DRAM memory cell A DRAM memory cell arrangement having memory cells each having a trench capacitor and a fin field-effect transistor or FinFET for addressing the trench capacitor. The memory cells are arranged in...
62	7445987	Offset vertical device The present invention includes a method for forming a memory array and the memory array produced therefrom. Specifically, the memory array includes at least one first-type memory device, each of...
63	7445988	Trench memory A trench device and method for fabricating same are provided. The trench device has a collar with a first portion that is doped and a second portion that is undoped. Fabrication of the partially...
64	7439112	Semiconductor device using partial SOI substrate and manufacturing method thereof A semiconductor device manufacturing method includes selectively removing portions of a buried oxide layer and first semiconductor layer in an SOI substrate having the first semiconductor layer...
65	7439130	Semiconductor device with capacitor and method for fabricating the same A method of fabricating a semiconductor device having a capacitor is provided. The method includes forming second, third, fourth, and fifth insulating layers on a first conductive layer formed in a...
66	7439128	Method of creating deep trench capacitor using a P+ metal electrode The present invention comprises a method including the steps of providing a substrate; forming a trench in the substrate; forming a buried plate in the substrate about the trench; depositing a...
67	7435643	Fabrication method of a dynamic random access memory A dynamic random access memory (DRAM) cell is described, including a semiconductor pillar on a substrate, a capacitor on a lower portion of a sidewall of the pillar, and a vertical transistor on an...
68	7432151	Semiconductor device and method for fabricating the same A method for fabricating a semiconductor device that forms a capacitor and metal interconnection in the same level, simultaneously using a damascene process for forming a metal interconnection. A...
69	7427545	Trench memory cells with buried isolation collars, and methods of fabricating same The present invention relates to semiconductor devices, preferably dynamic random access memory (DRAM) cells, each of which contains at least one trench capacitor with a buried isolation collar....
70	7425486	Method for forming a trench capacitor A method for forming a trench capacitor is presented in the following process steps. A trench is formed on a semiconductor substrate. A first trench dielectric is deposited into the trench without...
71	7420200	Damascene phase change memory A phase change material may include a pore formed of a relatively smaller phase change material and a relatively larger resistance heater. As a result, the relatively smaller portion of phase...
72	7420238	Semiconductor constructions The invention includes semiconductor constructions, and also includes methods of forming pluralities of capacitor devices. An exemplary method of the invention includes forming conductive storage...
73	7416943	Peripheral gate stacks and recessed array gates Methods are provided for simultaneously processing transistors in two different regions of an integrated circuit. Planar transistors are provided in a logic region while recessed access devices...
74	7410863	Methods of forming and using memory cell structures A method of filling vias for a PCRAM cell with a metal is described. A PCRAM intermediate structure including a substrate, a first conductor, and an insulator through which a via extends has a...
75	7410862	Trench capacitor and method for fabricating the same A trench capacitor with an isolation collar in a semiconductor substrate where the substrate adjacent to the isolation collar is free of dopants caused by auto-doping. The method of fabricating the...
76	7410861	Methods of forming dynamic random access memory trench capacitors DRAM trench capacitors formed by, inter alia, deposition of conductive material into a trench or doping the semiconductor region in which the trench is defined.
77	7408215	Dynamic random access memory A DRAM structure on a silicon substrate has an active area, gate conductors, deep trench capacitors, and vertical transistors. The deep trench capacitors are formed at intersections of the active...
78	7407852	Trench capacitor of a DRAM and fabricating method thereof A method of fabricating trench capacitors is described. A substrate having at least one isolation structure is provided. A first trench and a second trench are formed in the substrate beside the...
79	7390717	Trench power MOSFET fabrication using inside/outside spacers A fabrication process for a trench type power semiconductor device includes forming inside spacers over a semiconductor surface. Using the spacers as masks, trenches with gates are formed in the...
80	7390713	Method for forming trench memory cell structures for DRAMS One embodiment of the invention relates to a method for forming trench memory cell structures having trench capacitors and planar selection transistors. An implantation for forming a reinforcement...
81	7387931	Semiconductor memory device with vertical channel transistor and method of fabricating the same In a semiconductor memory device having a vertical channel transistor a body of which is connected to a substrate and a method of fabricating the same, the semiconductor memory device includes a...
82	7387930	Method of fabricating a bottle trench and a bottle trench capacitor A method of fabricating a bottle trench and a bottle trench capacitor. The method including: providing a substrate; forming a trench in the substrate, the trench having sidewalls and a bottom, the...
83	7388251	Non-planar flash memory array with shielded floating gates on silicon mesas A first plane of memory cells is formed on mesas of the array. A second plane of memory cells is formed in valleys adjacent to the mesas. The second plurality of memory cells is coupled to the...
84	7381613	Self-aligned MIM capacitor process for embedded DRAM A semiconductor device includes a group of capacitors and a trench. Each capacitor includes a first conductive material layer, a dielectric layer, and a second conductive material layer. The...
85	7378312	Recess gate transistor structure for use in semiconductor device and method thereof An inner spacer is formed in a sidewall of a gate in contact with a first active region that is electrically connected to an upper capacitor, thereby reducing a gate induced drain leakage (GIDL). A...
86	7375034	Recessing trench to target depth using feed forward data Recessing a trench using feed forward data is disclosed. In one embodiment, a method includes providing a region on a wafer including a trench area that includes a trench and a field area that is...
87	7375029	Method for fabricating contact holes in a semiconductor body and a semiconductor structure A method for fabricating contact holes in a semiconductor body proceeds from a structure in which: a plurality of trenches isolated from one another by mesa regions are provided in the...
88	7371645	Method of manufacturing a field effect transistor device with recessed channel and corner gate device Fabrication of recessed channel array transistors (RCAT) with a corner gate device includes forming pockets between a semiconductor fin that includes a gate groove and neighboring shallow trench...
89	7368341	Semiconductor circuit arrangement with trench isolation and fabrication method An explanation is given of, inter alia, a circuit arrangement containing a trench which penetrates through a charge-storing layer ( 18 ) and a doped semiconductor layer ( 14 ). The trench...
90	7364965	Semiconductor device and method of fabrication A semiconductor device having a DRAM has a capacitor in which a dielectric film and an upper electrode are laminated on a lower electrode comprising a polysilicone, in which a natural oxide film...
91	7365018	Fabrication of semiconductor device for flash memory with increased select gate width A non-volatile memory device having memory elements with a channel length of, e.g., 45-55 nm or less, is fabricated using existing lithographic techniques. In one approach, patterns of first and...
92	7361546	Method of forming conductive stud on vertical memory device A method of forming a conductive stud is provided. The method includes providing a substrate which has an upper surface and an opening. The opening exposes a portion of a vertical memory device. A...
93	7358133	Semiconductor device and method for making the same A method for forming a semiconductor device is provided. The method comprises providing a substrate with recessed gates and deep trench capacitor devices therein. Protrusions of the recessed gates...
94	7354786	Sensor element with trenched cavity A micromechanical sensor element and a method for the production of a micromechanical sensor element that is suitable, for example in a micromechanical component, for detecting a physical quantity....
95	7354821	Methods of fabricating trench capacitors with insulating layer collars in undercut regions Trench capacitors that have insulating layer collars in undercut regions and methods of fabricating such trench capacitors are provided. Some methods of fabricating a trench capacitor include...
96	7354822	Method of forming a MOSFET with dual work function materials A vertical pass transistor used in a DRAM cell for maintaining a low total leakage current and providing adequate drive current is described together with a method of fabricating such a device. The...
97	7351634	Trench-capacitor DRAM device and manufacture method thereof A method for fabricating a trench capacitor is disclosed. A substrate having a first pad layer is provided. STI structure is embedded into the first pad layer and the substrate. A second pad layer...
98	7348235	Semiconductor device and method of manufacturing the same An isolation insulation film is formed in an isolation trench in an upper portion of a silicon substrate. The isolation insulation film has an opening by which inner walls and bottom of the...
99	7348596	Devices for detecting current leakage between deep trench capacitors in DRAM devices A test device for detecting current leakage between deep trench capacitors in DRAM devices. The test device is disposed in a scribe line region of a wafer. In the test device, a first trench...
100	7344954	Method of manufacturing a capacitor deep trench and of etching a deep trench opening A substrate is provided having an oxide layer, a first nitride-silicon, a STI, and a second nitride-silicon. A pattern poly-silicon layer on the second nitride-silicon layer is etched to form a...

Matches 51 - 100 out of 750

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