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7623338 |
Multiple metal-insulator-metal capacitors and method of fabricating the same
In a device including multiple metal-insulator-metal (MIM) capacitors and a method of fabricating the same, the multiple MIM capacitors comprise a lower interconnect in a substrate; a first...
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7618859 |
Thin film capacitor and fabrication method thereof
A thin film capacitor comprising a top electrode, a bottom electrode, and a dielectric film held between the top and bottom electrodes. The dielectric film is composed of at least cations Ba, Sr,...
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7615441 |
Forming high-k dielectric layers on smooth substrates
A buffer layer and a high-k metal oxide dielectric may be formed over a smooth silicon substrate. The substrate smoothness may reduce column growth of the high-k metal oxide gate dielectric. The...
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7615440 |
Capacitor and method of manufacturing a capacitor
In a method of fabricating a semiconductor device, a level of metal is formed within an interval dielectric. The level of metal includes a first metal line separated from a second metal line by a...
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7615438 |
Lanthanide yttrium aluminum oxide dielectric films
Electronic apparatus and methods of forming the electronic apparatus include a lanthanide yttrium aluminum oxide dielectric film on a substrate for use in a variety of electronic systems. The...
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7611913 |
Ferroelectric rare-earth manganese-titanium oxides
Ferroelectric rare-earth manganese-titanium oxides and methods of their manufacture. The ferroelectric materials can provide nonvolatile data storage in rapid access memory devices.
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7608502 |
Method for manufacturing semiconductor device
In the process for manufacturing a semiconductor device of the present invention, a capacitor dielectric film is deposited via an atomic layer deposition employing an organic source material...
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7601649 |
Zirconium-doped tantalum oxide films
A dielectric film containing zirconium-doped tantalum oxide arranged as a structure of one or more monolayers and a method of fabricating such a dielectric film produce a reliable dielectric layer...
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7601548 |
Methods of fabricating ferroelectric capacitors having oxidation barrier conductive layers and lower electrodes disposed in trenches defined by supporting insulating layers
Ferroelectric capacitors are provided that include an integrated circuit substrate and a supporting insulation layer on the integrated circuit substrate having a face and a trench in the face. An...
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7598095 |
Ferroelectric memory and ferroelectric capacitor with Ir-alloy electrode or Ru-alloy electrode and method of manufacturing same
A ferroelectric capacitor comprises a first electrode comprising an alloy containing a first element and a second element of the periodic table of the elements, the first element being selected...
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7595250 |
Semiconductor device and method of manufacturing the same
There are provided the steps of forming an insulating film over a semiconductor substrate, forming sequentially a first conductive film, a dielectric film, a second conductive film on the...
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7592272 |
Manufacturing method of semiconductor integrated circuit
An object of the present invention is to provide a method of depositing yttrium-stabilized hafnia use for a DRAM capacitor insulating film while controlling the composition at a high accuracy by an...
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7592217 |
Capacitor with zirconium oxide and method for fabricating the same
A capacitor with zirconium oxide and a method for fabricating the same are provided. The method includes: forming a storage node; forming a multi-layered dielectric structure on the storage node,...
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7579643 |
Capacitor having high electrostatic capacity, integrated circuit device including the capacitor and method of fabricating the same
A capacitor may include a first electrode, a second electrode, a low dielectric layer, and/or a high dielectric layer. The first electrode may include at least one first electrode branch. The...
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7572695 |
Hafnium titanium oxide films
Embodiments of a dielectric layer containing a hafnium titanium oxide film structured as one or more monolayers include the dielectric layer disposed in an integrated circuit. Embodiments of...
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7563729 |
Method of forming a dielectric film
A method of forming a dielectric film on a substrate surface includes the steps of forming the dielectric film on the substrate surface in plural steps, and reforming, in each of the plural steps...
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7560333 |
Capacitor in semiconductor device and method of manufacturing the same
A capacitor may include at least one of a polysilicon layer over a semiconductor substrate; a capacitor dielectric layer over a polysilicon layer; an insulating layer over a capacitor dielectric...
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7550346 |
Method for forming a gate dielectric of a semiconductor device
Disclosed is a method for forming a gate dielectric in a semiconductor device. The present method includes forming a first dielectric layer on a semiconductor substrate; removing a portion of the...
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7550345 |
Methods of forming hafnium-containing materials
The invention includes methods of forming hafnium-containing materials, such as, for example, hafnium oxide. In one aspect, a semiconductor substrate is provided, and first reaction conditions are...
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7548408 |
Capacitor and its manufacturing method
A method for manufacturing a capacitor includes the steps of: forming a conductive layer above a base substrate; forming a dielectric layer above the conductive layer; forming a lanthanum nickelate...
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7544987 |
High-k dielectric materials and processes for manufacturing them
High dielectric films of mixed transition metal oxides of titanium and tungsten, or titanium and tantalum, are formed by sequential chemical vapor deposition (CVD) of the respective nitrides and...
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7531417 |
High performance system-on-chip passive device using post passivation process
A system and method for forming post passivation passive components, such as resistors and capacitors, is described. High quality electrical components, are formed on a layer of passivation, or on...
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7531408 |
Method of manufacturing a semiconductor device containing a PbxSr(1-x)[Zr,Ti]xRu(1-x)O3 film in a capacitor
A method of manufacturing a semiconductor device, including forming a capacitor above a semiconductor substrate, the capacitor including a dielectric film containing Pb, Zr, Ti and O. Forming the...
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7531405 |
Method of manufacturing a dielectric layer and corresponding semiconductor device
A polycrystalline dielectric layer is formed wherein the dielectric layer comprises a first dielectric material containing an oxide or nitride and a second material contributing to less than 1% in...
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7528434 |
Production process for a semiconductor component with a praseodymium oxide dielectric
The invention concerns a semiconductor component and an associated production process having a silicon-bearing layer, a praseodymium oxide layer and a mixed oxide layer arranged between the...
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7528034 |
Method for forming ferroelectric capacitor, ferroelectric capacitor and electronic device
A method for forming a ferroelectric capacitor includes the steps of (a) forming a first conductive layer above a base substrate, (b) forming, on the first conductive layer, a ferroelectric layer...
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7521263 |
Method of forming an insulating film, method of manufacturing a semiconductor device, and semiconductor device
A method of forming an insulating film includes forming a base film comprising a material whose surface is oxidized by being exposed to an oxidant. A source gas containing a metal material and a...
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7517751 |
Substrate treating method
A substrate processing method includes the step of forming an oxide film by oxidizing a silicon substrate surface and the step of nitriding the oxide film to form an oxynitride film, wherein there...
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7514316 |
Semiconductor device and method of manufacturing the same
A p-well ( 12 ) is formed on a surface of an Si substrate ( 11 ) and element isolation insulating films ( 13 ) are formed. Next, a thin SiO 2 film ( 14 a ) is formed on the whole surface, and an...
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7514315 |
Methods of forming capacitor structures having aluminum oxide diffusion barriers
A multilayer electrode structure has a conductive layer including aluminum, an oxide layer formed on the conductive layer, and an oxygen diffusion barrier layer. The oxide layer includes zirconium...
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7514272 |
Method of manufacturing ferroelectric memory device
A method of manufacturing a ferroelectric memory device includes: forming an active element on a substrate; forming an interlayer insulating layer on the substrate; forming an opening on the...
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7510943 |
Semiconductor devices and methods of manufacture thereof
A first gate dielectric of a first transistor is disposed over a workpiece in a first region, and a second gate dielectric of a second transistor is disposed over the workpiece in a second region....
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7507644 |
Method of forming dielectric layer of flash memory device
A method of manufacturing a flash memory device, wherein according to one embodiment, when a high dielectric material is formed by a remote plasma atomic layer deposition method, first and second...
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7507621 |
Method of manufacturing semiconductor device
Provided is a method of manufacturing a semiconductor device including the steps of: forming a first insulating film on a silicon substrate; forming a capacitor in which a lower electrode, a...
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7504684 |
Semiconductor device and manufacturing method therefor
A semiconductor device comprising a capacitive element which is provided above the semiconductor substrate and which has a capacitive insulation film held between an upper electrode and a lower...
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7504680 |
Semiconductor device and mask pattern
A semiconductor device according to an aspect of the invention includes a semiconductor substrate, and a capacitor that is provided above the semiconductor substrate and is configured such that a...
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7501320 |
Semiconductor device with dielectric structure and method for fabricating the same
A semiconductor device with a dielectric structure and a method for fabricating the same are provided. A capacitor in the semiconductor device includes: a bottom electrode formed on a substrate; a...
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7501191 |
Amorphous dielectric thin film and manufacturing method thereof
An amorphous dielectric film for use in a semiconductor device, such as a DRAM, and a method of manufacturing the amorphous dielectric film, includes bismuth (Bi), titanium (Ti), silicon (Si), and...
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7488673 |
Trench MOS Schottky barrier rectifier with high k gate dielectric and reduced mask process for the manufacture thereof
A trench MOS Schottky barrier device has a metal oxide gate dielectric such as TiSi lining the trench wall to increase the efficiency of the elemental cell and to improve depletion in the mesa...
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7488628 |
Methods for fabricating ferroelectric memory devices with improved ferroelectric properties
Pursuant to embodiments of the present invention, ferroelectric memory devices are provided which comprise a transistor that is provided on an active region in a semiconductor substrate, and a...
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7482286 |
Method for forming dielectric or metallic films
Method for producing a metal silicon (oxy)nitride by introducing a carbon-free silicon source (for example, (SiH3)3N), a metal precursor with the general formula MXn (for example, Hf(NEt2)4), and...
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7473597 |
Method of forming via structures and method of fabricating phase change memory devices incorporating such via structures
Provided are methods for forming conductive plug structures, such as via plugs, from a plurality of conductive layer patterns and methods of fabricating semiconductor devices, including...
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7470991 |
Integrated high voltage capacitor having capacitance uniformity structures and a method of manufacture therefor
The present invention provides an integrated high voltage capacitor, a method of manufacture therefore, and an integrated circuit chip including the same. The integrated high voltage capacitor,...
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7470584 |
TEOS deposition method
A TEOS deposition method. A mixture of gases is introduced into a process chamber, in which the mixture of gases comprises tetra-ethyl-ortho-silicate (TEOS) and N 2 . Compressive stress of a TEOS...
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7470551 |
Spin transistor and manufacturing method thereof
A spin transistor and a manufacturing method thereof are provided. The method includes defining a required area on a substrate by lithography; forming a doping area by ion-implantation, and forming...
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7465657 |
Method of manufacturing a semiconductor device having a capacitor
There is provided a semiconductor device that comprises a first impurity diffusion region formed on a silicon substrate (semiconductor substrate), a first interlayer insulating film (first...
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7465627 |
Methods of forming capacitors
This invention includes methods of forming capacitors. In one implementation, a first capacitor electrode material is formed over a substrate. The first capacitor electrode material is exposed to a...
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7465626 |
Method for forming a high-k dielectric stack
The present invention provides a method for fabricating a dielectric stack in an integrated circuit comprising the steps of (i) forming a high-k dielectric layer on a semiconductor substrate, (ii)...
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7462901 |
Field effect transistor
A field effect transistor is provided. The field effect transistor includes a channel region, electrically conductive channel connection regions, and a control region. The electrically conductive...
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7459371 |
Method for non-volatile memory fabrication
A method for non-volatile memory fabrication is provided, in which a substrate is provided, a bottom electrode is formed on the substrate, a solution with precursors of Zr and Sr is coated on the...
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