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Match Document Document Title
7416936 Capacitor with hafnium oxide and aluminum oxide alloyed dielectric layer and method for fabricating the same  
The present invention relates to a capacitor having a hafnium oxide and aluminum oxide alloyed dielectric layer and a method for fabricating the same. The capacitor includes: a lower electrode; a...
7416904 Method for forming dielectric layer of capacitor  
A fabrication method for forming a semiconductor device having a capacitor is provided. A capacitor dielectric layer is formed by depositing a first layer and a second layer. The second layer is a...
7413949 Capacitor and method for fabricating the same  
A capacitor is formed on an interlayer insulating film formed on a semiconductor substrate. The capacitor includes a bottom electrode made of platinum, a capacitor insulating film made of SrTaBiO...
7413947 Integrated high voltage capacitor having a top-level dielectric layer and a method of manufacture therefor  
The present invention provides an integrated high voltage capacitor, a method of manufacture therefore, and an integrated circuit chip including the same. The integrated high voltage capacitor,...
7410812 Manufacture of semiconductor device having insulation film of high dielectric constant  
A method contains the steps of (a) heating a silicon substrate in a reaction chamber; and (b) supplying film-forming gas containing source gas, nitridizing gas, and nitridation enhancing gas to a...
7407819 Polymer memory having a ferroelectric polymer memory material with cell sizes that are asymmetric  
A polymer memory and its method of manufacture are provided. One multi-layer construction of the polymer memory has two sets of word lines and a set of bit lines between the word lines. The word...
7405121 Semiconductor device with capacitors and its manufacture method  
An interlayer insulating film ( 22 ) is formed on a semiconductor substrate. A conductive plug ( 25 ) is embedded in a via hole formed through the interlayer insulating film. An oxygen barrier...
7399666 Atomic layer deposition of Zr3N4/ZrO2 films as gate dielectrics  
The use of atomic layer deposition (ALD) to form a dielectric layer of zirconium nitride (Zr 3 N 4 ) and zirconium oxide (ZrO 2 ) and a method of fabricating such a dielectric layer produces a...
7396719 Method of forming high dielectric film using atomic layer deposition and method of manufacturing capacitor having the high dielectric film  
A method of forming a high dielectric film using atomic layer deposition (ALD), and a method of manufacturing a capacitor having the high dielectric film, include supplying a precursor containing a...
7393742 Semiconductor device having a capacitor and a fabrication method thereof  
In a semiconductor device having a capacitor and a method of fabricating the same, the semiconductor device comprises a semiconductor substrate and an insulating layer on the semiconductor...
7390712 Methods of enhancing capacitors in integrated circuits  
Systems, devices, structures, and methods are described that inhibit dielectric degradation at high temperatures. An enhanced capacitor is discussed. The enhanced capacitor includes a first...
7387929 Capacitor in semiconductor device and method of manufacturing the same  
The present invention relates to a capacitor in semiconductor device and a method of manufacturing the same, wherein, owing to formation of a lower electrode and an upper electrode into a stack...
7378310 Method for manufacturing a memory device having a nanocrystal charge storage region  
A method for manufacturing a memory device having a metal nanocrystal charge storage structure. A substrate is provided and a first layer of dielectric material is grown on the substrate. A layer...
7374998 Selective incorporation of charge for transistor channels  
A device and method for selective placement of charge into a gate stack includes forming gate stacks including a gate dielectric adjacent to a transistor channel and a gate conductor and forming...
7374994 Bismuth titanium silicon oxide, bismuth titanium silicon oxide thin film, and method for forming the thin film  
A bismuth titanium silicon oxide having a pyrochlore phase, a thin film formed of the bismuth titanium silicon oxide, a method for forming the bismuth-titanium-silicon oxide thin film, a capacitor...
7374954 Ferroelectric register, and method for manufacturing capacitor of the same  
The present invention discloses a ferroelectric register and a method for manufacturing a capacitor of the same. The ferroelectric register is configured to reduce probability of data storage...
7374953 Ferroelectric random access memories (FRAMS) having lower electrodes respectively self-aligned to node conductive layer patterns and methods of forming the same  
A ferroelectric random access memory (FRAM) includes a semiconductor substrate and an interlayer insulating layer on the substrate. A diffusion preventive layer is on the interlayer insulating...
7371633 Dielectric layer for semiconductor device and method of manufacturing the same  
A semiconductor device comprises a silicate interface layer and a high-k dielectric layer overlying the silicate interface layer. The high-k dielectric layer comprises metal alloy oxides.
7368343 Low leakage MIM capacitor  
Capacitor structures for use in integrated circuits and methods of their manufacture. The capacitor structures include a bottom electrode, a top electrode and a dielectric layer interposed between...
7368300 Capacitor in semiconductor device and method for fabricating the same  
The present invention relates to a capacitor in a semiconductor device and a method for fabricating the same. The capacitor fabrication method includes the steps of: forming a lower electrode by...
7368298 Method of manufacturing ferroelectric semiconductor device  
An Ir film, an IrO x film, a Pt film, a PtO film and a Pt film are formed, and thereafter a PLZT film is formed. Then, heat treatment at 600° C. or lower is performed by the RTA method in an...
7365011 Catalytic nucleation monolayer for metal seed layers  
A method of forming a copper interconnect on a substrate comprises providing a substrate that includes a dielectric layer and a trench etched into the dielectric layer, depositing a barrier layer...
7364964 Method of fabricating an interconnection layer above a ferroelectric capacitor  
A highly reliable semiconductor device having a ferroelectric capacitor structure by sufficiently preventing the H 2 attack without damaging the function of an interlayer insulating film covering...
7361608 Method and system for forming a feature in a high-k layer  
A method for plasma processing a high-k layer includes providing a substrate having a high-k layer formed thereon, on a substrate holder in a process chamber, and creating a plasma in the process...
7361549 Method for fabricating memory cells for a memory device  
The invention provides a method for fabricating a memory device having memory cells which are formed on a microstructured driving unit ( 100 ), in which method a shaping layer ( 104 ) is provided...
7344941 Methods of manufacturing a metal-insulator-metal capacitor  
Methods of manufacturing a metal-insulator-metal capacitor are provided. An illustrated method includes: forming a lower metal electrode layer pattern for a metal-insulator-metal capacitor and a...
7344939 Ferroelectric capacitor with parallel resistance for ferroelectric memory  
Ferroelectric memory cells ( 3 ) are presented, in which a cell resistor (R) is integrated into the cell capacitor (C) to inhibit charge accumulation or charge loss at the cell storage node (SN)...
7341908 Semiconductor device and method of manufacturing the same  
Provided are a semiconductor device including a reliable interconnect and a method of manufacturing the same. The semiconductor device includes a substrate, an inter-metal dielectric (IMD) pattern...
7341907 Single wafer thermal CVD processes for hemispherical grained silicon and nano-crystalline grain-sized polysilicon  
Methods for depositing hemispherical grained silicon layers and nanocrystalline grain-sized polysilicon layers are provided. The hemispherical grained silicon layers and nanocrystalline grain-sized...
7338854 Method for manufacturing multilayer ceramic capacitor  
A method for manufacturing a multilayer ceramic capacitor, in which internal electrodes printed on each of a plurality of dielectric sheets have reduced thicknesses using an absorption member,...
7338814 Method for fabricating ferroelectric capacitive element and ferroelectric capacitive element  
A method for fabricating a ferroelectric capacitive element of this invention includes the steps of forming a lower electrode made of a first conductive film on a substrate; forming a first...
7335552 Electrode for thin film capacitor devices  
A method of forming a conductor on a substrate including steps of depositing tantalum on a glass layer of the substrate; oxidizing the tantalum; and depositing a noble metal on the oxidized...
7335538 Method for manufacturing bottom substrate of liquid crystal display device  
A method for manufacturing liquid crystal display substrates comprises the steps of: (a) providing a substrate having a transparent electrode layer and a metal layer; (b) forming a patterned...
7323382 Intralevel decoupling capacitor, method of manufacture and testing circuit of the same  
A decoupling capacitor is provided for a semiconductor device and may include a first low dielectric insulator layer and a low resistance conductor formed into at least two interdigitized patterns...
7310238 Thin-film embedded capacitance, method for manufacturing thereof, and a printed wiring board  
The present invention provides a thin-film embedded capacitance having a substantial electrostatic capacity per unit area, and a method for manufacturing thereof. A thin film embedded capacitance...
7309630 Method for forming patterned media for a high density data storage device  
Systems in accordance with the present invention can include a tip contactable with a media, the media including a substrate and a plurality of cells disposed over the substrate, one or more of the...
7300805 Method of manufacturing a ferroelectric capacitor  
Provided is a method of manufacturing a capacitor in a semiconductor device, comprising the steps of: forming a first metal film of noble series for the bottom electrode; forming a ferroelectric...
7288453 Method of fabricating analog capacitor using post-treatment technique  
There is provided a method of fabricating an analog capacitor using a post-treatment technique. The method includes forming a lower insulating layer on a semiconductor substrate. A bottom electrode...
7282408 Surface treatment of an oxide layer to enhance adhesion of a ruthenium metal layer  
A method for forming a ruthenium metal layer on a dielectric layer comprises forming a silicon dioxide layer, then treating the silicon dioxide with a silicon-containing gas, for example silicon...
7276422 Post passivation interconnection schemes on top of the IC chips  
A new method is provided for the creation of interconnect lines. Fine line interconnects are provided in a first layer of dielectric overlying semiconductor circuits that have been created in or on...
7273815 Etch features with reduced line edge roughness  
A method for forming a feature in a layer with reduced line edge roughening is provided. A photoresist layer is formed over the layer. The photoresist layer is patterned to form photoresist...
7273760 Semiconductor device and method of manufacturing the same  
The present invention provides a method of manufacturing a semiconductor device that can inhibit deterioration of the ferroelectric film cased by hydrogen generated in a wiring layer. The method of...
7271055 Methods of forming low leakage currents metal-insulator-metal (MIM) capacitors and related MIM capacitors  
Methods of forming MIM comprise forming a lower electrode on a semiconductor substrate, forming a lower dielectric layer on the lower electrode, and forming an upper dielectric layer on the lower...
7271054 Method of manufacturing a ferroelectric capacitor having RU1-XOX electrode  
A ferroelectric capacitor has the property that polarization of a ferroelectric thin film can readily be reversed and polarization-reversal charge increased. The ferroelectric capacitor has a...
7270765 Composition for forming dielectric layer, MIM capacitor and process for its production  
To provide a composition for forming a dielectric layer excellent in dielectric constant and withstand voltage properties, a MIM capacitor and a process for its production. A composition for...
7268047 Semiconductor device and method for manufacturing the same  
A gate insulating film on a silicon substrate of includes a SiO 2 film and a high-k film. The high-k film contains a transition metal, aluminum, silicon, and oxygen. The concentration of silicon...
7268038 Method for fabricating a MIM capacitor having increased capacitance density and related structure  
According to one embodiment of the invention, a method for fabricating a MIM capacitor in a semiconductor die includes a step of depositing a first interconnect metal layer. The method further...
7268035 Methods of forming semiconductor constructions comprising cerium oxide and titanium oxide  
The invention includes semiconductor constructions comprising dielectric materials which contain cerium oxide and titanium oxide. The dielectric materials can contain a homogeneous distribution of...
7267996 Iridium etching for FeRAM applications  
A method of etching an iridium layer for use in a ferroelectric device includes preparing a substrate; depositing a barrier layer on the substrate; depositing an iridium layer on the barrier layer;...
7259059 Method for forming capacitor of semiconductor device  
Disclosed is a method for forming a capacitor of a semiconductor device, which can improve a leakage current characteristic in applying HfxAlyOz as a dielectric film. In such a method, HfxAlyOz...
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