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Match Document Document Title
7429508 Semiconductor memory device and method of manufacturing the same  
A semiconductor memory device includes a semiconductor substrate having a first region and a second region, a transistor placed in the first region of the semiconductor substrate, a first...
7429507 Semiconductor device having both memory and logic circuit and its manufacture  
A gate insulating film is formed on the principal surface of a semiconductor substrate. A silicon film is formed on the gate insulating film. Impurities are doped in the silicon film. In this case,...
7419870 Method of manufacturing a flash memory device  
Provided is a method of manufacturing a flash memory device. In the method, after forming a cell string and source/drain selection transistors, it forms a first oxide film in which a sidewall oxide...
7413948 Semiconductor capacitor structure and method to form same  
A semiconductor capacitor structure comprising sidewalls of conductive hemispherical grained material, a base of metal silicide material, and a metal nitride material overlying the conductive...
7407520 Method of making a multi-electrode double layer capacitor having hermetic electrolyte seal  
A long life double layer capacitor and method of making the same including a case and a first terminal with an electrically insulating hermitic seal interposed between the first terminal and the...
7402486 Cylinder-type capacitor and storage device, and method(s) for fabricating the same  
A one cylinder storage device and a method for fabricating a capacitor are disclosed, realizing simplified fabrication by overexposure with a mask having a plurality of holes, in which the method...
7402183 High capacitance cathode foil produced by abrasion process using titanium nitride powder  
A dry titanium nitride (TiN) powder abrasion method roughens the surface of a valve metal foil for use as a cathode in an electrolytic capacitor. This increases the surface area of the foil,...
7399689 Methods for manufacturing semiconductor memory devices using sidewall spacers  
Storage nodes for semiconductor memory devices may be fabricated by repeatedly forming conductive and insulating spacers on mold oxide layer pattern sidewalls, to thereby obtain fine line patterns...
7393742 Semiconductor device having a capacitor and a fabrication method thereof  
In a semiconductor device having a capacitor and a method of fabricating the same, the semiconductor device comprises a semiconductor substrate and an insulating layer on the semiconductor...
7390712 Methods of enhancing capacitors in integrated circuits  
Systems, devices, structures, and methods are described that inhibit dielectric degradation at high temperatures. An enhanced capacitor is discussed. The enhanced capacitor includes a first...
7387928 Device and method for making air, gas or vacuum capacitors and other microwave components  
A device and method for making a capacitor and other high frequency and/or microwave components. In particular, an air dielectric capacitor has a first electrode and a second electrode that are...
7375948 Variable charge packet integrated circuit capacitor  
A variable IC capacitor includes a semiconductor layer doped to contain mobile charge carriers. Capacitor electrodes C 1 and C 2 are disposed adjacent to each other on the layer's surface, gate...
7375033 Multi-layer interconnect with isolation layer  
An integrated circuit interconnect is fabricated by using a mask to form a via in an insulating layer for a conductive plug. After the plug is formed in the via, a thin (e.g., <100 nm) isolation...
7374993 Methods of forming capacitors  
A method of forming a capacitor includes forming a first capacitor electrode over a semiconductor substrate. A capacitor dielectric region is formed onto the first capacitor electrode. The...
7371635 Semiconductor device and method of manufacturing the same  
A method of manufacturing a semiconductor device includes: forming a transistor with first and second ends of a main current path, and a control electrode, covering the transistor with a first...
7371589 Ferroelectric random access memory capacitor and method for manufacturing the same  
The method for manufacturing an FeRAM capacitor with a merged top electrode plate line (MTP) structure is employed to prevent a detrimental impact on the FeRAM and to secure a reliable FeRAM...
7368774 Capacitor and its manufacturing method, ferroelectric memory device, actuator, and liquid jetting head  
A capacitor includes a lower electrode, a first dielectric film composed of lead zirconate titanate niobate formed above the lower electrode, a second dielectric film composed of lead zirconate...
7368365 Memory array buried digit line  
A method of forming a buried digit line is disclosed. Sacrificial spacers are formed along the sidewalls of an isolation trench, which is then filled with a sacrificial material. One spacer is...
RE40275 Method for producing a memory cell  
A method for producing a memory cell includes masking a desired polysilicon structure with an oxidation-inhibiting layer, preferably a nitride layer. The polysilicon above source/drain regions and...
7365384 Trench buried bit line memory devices and methods thereof  
A memory device includes isolation trenches that are formed generally parallel to and along associated strips of active area. A conductive bit line is recessed within each isolation trench such...
7364979 Capcitor with single crystal tantalum oxide layer and method for fabricating the same  
A capacitor and a method for fabricating the same are provided. The capacitor includes: a substrate; an inter-layer insulation layer formed over the substrate and including a contact hole; a...
7361544 Method for fabricating capacitor in semiconductor device  
A method for fabricating a capacitor in a semiconductor device is provided. The method includes forming an insulation layer over a substrate; flushing a metal source onto the insulation layer to...
7361540 Method of reducing noise disturbing a signal in an electronic device  
Certain aspects of a method for reducing noise disturbing at least one signal in an electronic device may comprise shielding a first layer doped with a first dopant from a signaling layer employing...
7355880 Soft error resistant memory cell and method of manufacture  
A semiconductor device memory cell ( 100 ) can include a built-in capacitor for reducing a soft-error rate (SER). A memory cell ( 100 ) can include a first inverter ( 102 ) and second inverter (...
7348234 Methods of forming capacitor constructions  
The invention includes methods of electrochemically treating semiconductor substrates. The invention includes a method of electroplating a substance. A substrate having defined first and second...
7344941 Methods of manufacturing a metal-insulator-metal capacitor  
Methods of manufacturing a metal-insulator-metal capacitor are provided. An illustrated method includes: forming a lower metal electrode layer pattern for a metal-insulator-metal capacitor and a...
7341909 Methods of forming semiconductor constructions  
The invention includes methods of forming semiconductor constructions in which electrically conductive structures are formed between bitlines to electrically connect with storage node contacts. The...
7341875 Semiconductor memory device with a capacitor formed therein and a method for forming the same  
To integrate a capacitor device ( 40 ) into the region of a semiconductor memory device with a particularly small number of process steps, a lower electrode device ( 43 ) and an upper electrode...
7338855 Method for fabricating semiconductor device  
A method for fabricating a semiconductor device is provided, wherein a large MIM capacitor including an uneven surface if formed to increase capacitance. The method includes forming a polysilicon...
7338854 Method for manufacturing multilayer ceramic capacitor  
A method for manufacturing a multilayer ceramic capacitor, in which internal electrodes printed on each of a plurality of dielectric sheets have reduced thicknesses using an absorption member,...
7338815 Semiconductor device manufacturing method  
A semiconductor device manufacturing method, includes a step of forming refractory metal silicide layers 13 a to 13 c in a partial area of a semiconductor substrate 10 , a step of forming an...
7335551 Method to fabricate a thin film non volatile memory device scalable to small sizes  
A thin film non volatile memory scalable to small sizes and its fabrication process are disclosed. The thin film memory comprises a thin film transistor control circuitry fabricated on a flexible...
7329572 Method of forming PIP capacitor  
A method of forming a polysilicon-insulator-polysilicon (PIP) capacitor includes the steps of forming a lower electrode of a first polysilicon layer over a semiconductor substrate, forming a...
7323737 DRAM constructions and electronic systems  
The invention includes methods in which metal oxide dielectric materials are deposited over barrier layers. The barrier layers can comprise compositions of metal and one or more of carbon, boron...
7323382 Intralevel decoupling capacitor, method of manufacture and testing circuit of the same  
A decoupling capacitor is provided for a semiconductor device and may include a first low dielectric insulator layer and a low resistance conductor formed into at least two interdigitized patterns...
7323380 Single transistor vertical memory gain cell  
A high density vertical single transistor gain cell is realized for DRAM operation. The gain cell includes a vertical transistor having a source region, a drain region, and a floating body region...
7320911 Methods of forming pluralities of capacitors  
A method of forming a plurality of capacitors includes providing a plurality of capacitor electrodes comprising sidewalls. The plurality of capacitor electrodes are supported at least in part with...
7317221 High density MIM capacitor structure and fabrication process  
A stacked integrated circuit (IC) MIM capacitor structure and method for forming the same the MIM capacitor structure including a first MIM capacitor structure formed in a first IMD layer...
7316962 High dielectric constant materials  
A capacitor ( 10 ) includes a substrate ( 12 ) and two metal electrodes ( 14, 18 ). A dielectric layer ( 16 ) is formed between the electrodes. Preferably, the dielectric layer has a dielectric...
7316951 Fabrication method for a trench capacitor having an insulation collar  
The present invention provides a fabrication method for a trench capacitor having an insulation collar ( 10 ) in a silicon substrate ( 1 ), having the steps of: providing a trench ( 5 ) in the...
7314795 Methods of forming electronic devices including electrodes with insulating spacers thereon  
An electronic device may include a substrate, a conductive layer on the substrate, and an insulating spacer. The conductive electrode may have an electrode wall extending away from the substrate....
7312130 Methods of forming capacitor structures including L-shaped cavities  
Methods of forming capacitor structures may include forming an insulating layer on a substrate, forming a first capacitor electrode on the insulating layer, forming a capacitor dielectric layer on...
7312118 Semiconductor device and method of manufacturing the same  
Disclosed is a semiconductor device comprising a semiconductor substrate, a capacitor structure formed above the semiconductor substrate and comprising a first electrode, a second electrode...
7309906 Apparatus and methods for providing highly effective and area efficient decoupling capacitance in programmable logic devices  
Improved decoupling capacitor designs and layout schemes are provided that generate high effective capacitance and high area efficiency at higher frequencies than that of previously known...
7309627 Method for fabricating a gate mask of a semiconductor device  
A nitride layer of the gate mask for the semiconductor device is deposited at a temperature higher than 750 deg. C so as to release hydrogen from the nitride layer. Alternatively, a nitride layer...
7306986 Method of making a semiconductor device, and semiconductor device made thereby  
A method of making a semiconductor device includes the steps of: providing a semiconductor substrate ( 110, 510, 1010, 1610 ) having a patterned interconnect layer ( 120, 520, 1020, 1620 ) formed...
7306822 Products comprising nano-precision engineered electronic components  
Electronic devices prepared from nanoscale powders are described. Methods for utilizing nanoscale powders and related nanotechnology to prepare capacitors, inductors, resistors, thermistors,...
7301185 High-voltage transistor device having an interlayer dielectric etch stop layer for preventing leakage and improving breakdown voltage  
A high-voltage transistor device with an interlayer dielectric (ILD) etch stop layer for use in a subsequent contact hole process is provided. The etch stop layer is a high-resistivity film having...
7291505 Method of manufacturing a ferroelectric device  
The invention relates to a ferroelectric device ( 10 ) with a body ( 11 ) comprising a substrate ( 1 ) and a ferroelectric layer ( 2 ) provided with a connection conductor ( 3 ) on a side facing...
7285460 Semiconductor device and method of manufacturing the same  
There is provided a semiconductor device which comprises a first interlayer insulating film (first insulating film) formed over a silicon (semiconductor) substrate, a capacitor formed on the first...
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