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9030002 Semiconductor device having IPD structure with smooth conductive layer and bottom-side conductive layer  
A semiconductor device includes an interface layer, a smooth conductive layer disposed over the interface layer, and a first insulating layer disposed over a first surface of the smooth conductive...
9029929 Semiconductor memory device and manufacturing method thereof  
A memory cell therein includes a first transistor and a capacitor and stores data corresponding to a potential held in the capacitor. The first transistor includes a pair of electrodes, an...
9023703 Method of manufacturing semiconductor device using an oxidation process to increase thickness of a gate insulation layer  
According to a method of manufacturing a semiconductor device including a buried gate, after a recess is formed by etching a semiconductor substrate, since an etching back process is not performed...
9018060 Variable capacitance sensors and methods of making the same  
A variable capacitance sensor includes a first conductive electrode comprising electrically interconnected first conductive sheets; a second conductive electrode comprising electrically...
8993403 Socket, and capacitor element producing jig using socket  
The present invention provides a socket by which a capacitor element can be produced without causing contamination of chemical conversion treatment liquid or semiconductor layer forming liquid...
8987119 Pillar devices and methods of making thereof  
A method of making a semiconductor device includes providing an insulating layer containing a plurality of openings, forming a first semiconductor layer in the plurality of openings in the...
8980744 Inexpensive electrode materials to facilitate rutile phase titanium oxide  
This disclosure provides a method of fabricating a semiconductor stack and associated device, such as a capacitor and DRAM cell. In particular, a bottom electrode has a material selected for...
8975134 Fullerene-based capacitor electrode  
A doped fullerene-based conductive material can be used as an electrode, which can contact a dielectric such as a high k dielectric. By aligning the dielectric with the band gap of the doped...
8975135 Analog floating-gate capacitor with improved data retention in a silicided integrated circuit  
An analog floating-gate electrode in an integrated circuit, and method of fabricating the same, in which trapped charge can be stored for long durations. The analog floating-gate electrode is...
8975133 Capacitors positioned at the device level in an integrated circuit product and methods of making such capacitors  
One illustrative integrated circuit product disclosed herein includes a metal-1 metallization layer positioned above a semiconducting substrate, a capacitor positioned between a surface of the...
8951859 Method for fabricating passive devices for 3D non-volatile memory  
A method for fabricating passive devices such as resistors and capacitors for a 3D non-volatile memory device. In a peripheral area of a substrate, alternating layers of a dielectric such as oxide...
8951914 Manufacturing method of device  
A device manufacturing method includes: sequentially forming a first sacrificial film, a first support film, a second sacrificial film, and a second support film on a semiconductor substrate;...
8946018 Methods of forming memory arrays and semiconductor constructions  
Some embodiments include methods of forming semiconductor constructions. A heavily-doped region is formed within a first semiconductor material, and a second semiconductor material is epitaxially...
8946046 Guided path for forming a conductive filament in RRAM  
A method of forming a non-volatile memory device, includes forming a first electrode above a substrate, forming a dielectric layer overlying the first electrode, forming an opening structure in a...
8921977 Capacitor array and method of fabricating the same  
A capacitor array includes a plurality of capacitors and a support frame. Each capacitor includes an electrode. The support frame supports the plurality of electrodes and includes a plurality of...
8921181 Flourine-stabilized interface  
Methods for forming an electronic device having a fluorine-stabilized semiconductor substrate surface are disclosed. In an exemplary embodiment, a layer of a high-κ dielectric material is formed...
8916434 Enhanced hydrogen barrier encapsulation method for the control of hydrogen induced degradation of ferroelectric capacitors in an F-RAM process  
A method of encapsulating a ferroelectric capacitor or ferroelectric memory cell includes forming encapsulation materials adjacent to a ferroelectric capacitor. forming a ferroelectric oxide (FEO)...
8916436 MIM capacitor with plate having high melting point  
A method for producing an integrated device including an MIM capacitor. The method includes the steps of providing a functional substrate including functional circuits of the integrated device,...
8907410 TSV structure with a built-in U-shaped FET transistor for improved characterization  
A through-the silicon via (TSV) structure providing a built-in TSV U-shaped FET that includes an annular gate shaped as a TSV partially embedded in a substrate, the annular gate having an inner...
8906763 Method of manufacturing a dynamic random access memory (DRAM) including forming contact pads of adjacent cells by laterally etching a contact opening of a cell therebetween  
A DRAM device includes a substrate including an active region having an island shape and a buried gate pattern. A mask pattern is over an upper surface portion of the substrate between portions of...
8906704 Method of manufacturing a ferroelectric capacitor and a ferroelectric capacitor  
A lower electrode film is formed above a substrate. A ferroelectric film is formed above the lower electrode film. An amorphous intermediate film of a perovskite-type conductive oxide is formed...
8895385 Methods of forming semiconductor structures  
A method of forming a semiconductor structure includes forming a through-substrate-via (TSV) structure in a substrate. The method includes forming a first etch stop layer over the TSV structure....
8884350 Semiconductor device  
This semiconductor device according to the present invention includes a plurality of cylindrical lower electrodes aligned densely in a memory array region; a plate-like support which is contacted...
8883602 Memory devices having electrodes comprising nanowires, systems including same and methods of forming same  
Memory devices having memory cells comprising variable resistance material include an electrode comprising a single nanowire. Various methods may be used to form such memory devices, and such...
8883606 Multi-level thin film capacitor on a ceramic substrate and method of manufacturing the same  
In accordance with the teachings described herein, a multi-level thin film capacitor on a ceramic substrate and method of manufacturing the same are provided. The multi-level thin film capacitor...
8878293 Semiconductor device having DC structure  
A semiconductor device includes an interlayer insulating layer on a substrate, and a direct contact (DC) structure vertically penetrating the interlayer insulating layer and contacting the...
8871588 Reverse construction integrated circuit  
A method of fabricating a memory cell comprises forming a plurality of doped semiconductor layers on a carrier substrate. The method further comprises forming a plurality of digit lines separated...
8854287 Vertical alignment display device with enhanced contrast  
A vertical alignment liquid crystal display includes two sub-pixels each with a variable capacitor. A pixel is bisected into a high gray sub-pixel and a low gray sub-pixel through forming a...
8846478 Manufacturing method of semiconductor device  
A semiconductor device including a low-concentration impurity region formed on the drain side of an n-type MIS transistor, in a non-self-aligned manner with respect to an end portion of the gate...
8835273 High temperature ALD process of metal oxide for DRAM applications  
A first electrode layer for a Metal-Insulator-Metal (MIM) DRAM capacitor is formed wherein the first electrode layer contains a conductive metal oxide formed using a high temperature, low pressure...
8828821 Fabrication of semiconductor stacks with ruthenium-based materials  
This disclosure provides a method of fabricating a semiconductor stack and associated device such as a capacitor and DRAM cell. In particular, a bottom electrode upon which a dielectric layer is...
8815695 Methods to improve leakage for ZrO2 based high K MIM capacitor  
A first electrode layer for a Metal-Insulator-Metal (MIM) DRAM capacitor is formed wherein the first electrode layer contains a conductive base layer and conductive metal oxide layer. A second...
8815677 Method of processing MIM capacitors to reduce leakage current  
A method for processing dielectric materials and electrodes to decrease leakage current is disclosed. The method includes a post dielectric anneal treatment in an oxidizing atmosphere to reduce...
8813325 Method for fabricating a DRAM capacitor  
A method for fabricating a dynamic random access memory (DRAM) capacitor stack is disclosed wherein the stack includes a first electrode, a dielectric layer, and a second electrode. The first...
8796087 Method of fabricating a semiconductor device  
A semiconductor device including a substrate; a bottom electrode on the substrate; a first dielectric layer on the bottom electrode, the first dielectric layer including a first metal oxide...
8796782 Semiconductor device and method of manufacturing the same  
A polysilicon film that serves as a resistance element is formed. The polysilicon film is patterned to a predetermined shape. CVD oxide films covering the patterned polysilicon film are etched...
8790975 Semiconductor device comprising a capacitor formed in the metallization system based on dummy metal features  
When forming capacitive structures in a metallization system, such as in a dynamic RAM area, placeholder metal regions may be formed together with “regular” metal features, thereby achieving a...
8785271 DRAM cell based on conductive nanochannel plate  
A capacitor is formed in nano channels in a conductive body. Embodiments include forming a source contact through a first inter layer dielectric (ILD), forming a conductive body on the first ILD,...
8772105 Semiconductor device and method for forming the same  
A semiconductor device and a method for forming the same are disclosed. The semiconductor device includes a first junction region formed at the bottom of a vertical pillar, a bit line formed below...
8772104 Capacitor and method for fabricating the same, and semiconductor device and method for fabricating the same  
The semiconductor device comprises a device isolation region formed in a semiconductor substrate, a lower electrode formed in a device region defined by the device isolation region and formed of...
8766228 Electrically actuated device and method of controlling the formation of dopants therein  
An electrically actuated device includes a first electrode, a second electrode, and an active region disposed between the first and second electrodes. The device further includes at least one of...
8767404 Decoupling capacitor circuitry  
Integrated circuits with decoupling capacitor circuitry are provided. The decoupling capacitor circuitry may include density-compliance structures. The density-compliance structures may be...
8766410 Embedded DRAM integrated circuits with extremely thin silicon-on-insulator pass transistors  
Integrated circuits having combined memory and logic functions are provided. In one aspect, an integrated circuit is provided. The integrated circuit comprises: a substrate comprising a silicon...
8765592 Multi-landing contact etching  
A method for contacting MOS devices. First openings in a photosensitive material are formed over a substrate having a top dielectric in a first die area and a second opening over a gate stack in a...
8765547 Area-efficient capacitor using carbon nanotubes  
An on-chip decoupling capacitor is disclosed. One or more carbon nanotubes are coupled to a first electrode of the capacitor. A dielectric skin is formed on the one or more carbon nanotubes. A...
8766343 Integrated circuit capacitors having sidewall supports  
In a method of forming a capacitor, a first mold layer pattern including a first insulating material may be formed on a substrate. The first mold layer pattern may have a trench. A supporting...
8765548 Capacitors and methods of manufacture thereof  
Semiconductor devices, capacitors, and methods of manufacture thereof are disclosed. In one embodiment, a method of fabricating a capacitor includes forming a first material over a workpiece, and...
8765569 Molybdenum oxide top electrode for DRAM capacitors  
A metal oxide bilayer second electrode for a MIM DRAM capacitor is formed wherein the layer of the electrode that is in contact with the dielectric layer (i.e. bottom layer) has a desired...
8753966 Method for fabricating buried gates using pre landing plugs  
A method for fabricating a semiconductor device is provided, the method includes forming a plug conductive layer over an entire surface of a substrate, etching the plug conductive layer to form...
8753933 Methods for forming a conductive material, methods for selectively forming a conductive material, methods for forming platinum, and methods for forming conductive structures  
Methods of selectively forming a conductive material and methods of forming metal conductive structures are disclosed. An organic material may be patterned to expose regions of an underlying...