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7615493 Method for forming alignment mark  
A method for forming an alignment mark comprises forming an etch stop film and an interlayer insulating film over a semiconductor substrate including a cell region and a scribe region, etching a...
7615428 Vertical memory device and method  
Method and apparatus are described for a memory cell includes a substrate, a body extending vertically from the substrate, a first gate having a vertical member and a horizontal member and a second...
7611956 Semiconductor device having MOS varactor and methods for fabricating the same  
A semiconductor device with having a MOS varactor and methods of fabricating the same are disclosed. The MOS varactor includes a metal gate electrode, an active semiconductor plate interposed...
7608502 Method for manufacturing semiconductor device  
In the process for manufacturing a semiconductor device of the present invention, a capacitor dielectric film is deposited via an atomic layer deposition employing an organic source material...
7605092 Passive elements, articles, packages, semiconductor composites, and methods of manufacturing same  
Systems and methods associated with semiconductor articles are disclosed, including forming a first layer of material on a substrate, etching trenches within regions defining a passive element in...
7605036 Method of forming floating gate array of flash memory device  
The method of forming a floating gate array of a flash memory device includes: (a) forming a plurality of device isolations, which define active device regions, in a semiconductor substrate, the...
7601630 Semiconductor device and method for fabricating the same  
A method of fabricating a semiconductor memory device and a structure that forms both a resistor and an etching protection layer to reduce a contact resistance. The method of fabricating a...
7601579 Method of manufacturing semiconductor integrated circuit  
A method of manufacturing a semiconductor integrated circuit including a logic part and a memory array part, the logic part having N-type and P-type FETs, and the memory array part having N-type...
7598180 Semiconductor process for removing defects due to edge chips of a semiconductor wafer and semiconductor device fabricated thereby  
A method for removing defects due to edge chips of a semiconductor wafer is disclosed. This method includes forming a molding layer over a semiconductor wafer. The molding layer is patterned to...
7595218 Programmable resistive RAM and manufacturing method  
Programmable resistive RAM cells have a resistance that depends on the size of the programmable resistive elements. Manufacturing methods and integrated circuits for programmable resistive elements...
7592216 Fabrication process of a semiconductor device having a capacitor  
A method of manufacturing a semiconductor device includes forming a first trench in a capacitor device region of a semiconductor substrate, forming a capacitor insulation film over a sidewall...
7588991 Method for fabricating embedded static random access memory  
The present invention provides a method for fabricating an embedded static random access memory, including providing a semiconductor substrate; defining a logic area and a memory cell area on the...
7585723 Method for fabricating capacitor  
A method for fabricating a semiconductor device includes forming an insulation structure over a substrate structure including contact plugs, etching the insulation structure to form opening regions...
7582502 Method for manufacturing back side illumination image sensor  
Provided are methods for manufacturing a back side illumination image sensor. In one method, an ion implantation layer is formed in an entire region of a front side of a first substrate. A device...
7579233 Method of fabricating semiconductor device for reducing parasitic capacitance between bit lines and semiconductor device fabricated thereby  
In a method of fabricating a semiconductor device capable of reducing parasitic capacitance between bit lines and a semiconductor device fabricated by the method, the semiconductor device includes...
7572710 Methods of forming conductive contacts to source/drain regions and methods of forming local interconnects  
The invention comprises methods of forming a conductive contact to a source/drain region of a field effect transistor, and methods of forming local interconnects. In one implementation, a method of...
7572709 Method, apparatus, and system for low temperature deposition and irradiation annealing of thin film capacitor  
Some embodiments of the invention include thin film capacitors formed in a package substrate of an integrated circuit package. At least one of the thin film capacitors includes a first electrode...
7566611 Manufacturing method for an integrated semiconductor structure  
The present invention provides a manufacturing method for an integrated semiconductor structure comprising the steps of providing a semiconductor substrate having a plurality of gate stacks in a...
7566610 Process for manufacturing integrated resistive elements with silicidation protection  
In a process for the fabrication of integrated resistive elements with protection from silicidation, at least one active area ( 15 ) is delimited in a semiconductor wafer ( 10 ). At least one...
7566607 Semiconductor device and fabrication process thereof  
A semiconductor device includes a semiconductor substrate, a polysilicon pattern formed on the semiconductor substrate via an insulation film, an interlayer insulation film formed on the...
7563672 Methods of fabricating integrated circuit devices including metal-insulator-metal capacitors  
Integrated circuit devices including metal-insulator-metal (MIM) capacitors are provided. The MIM capacitors may include an upper electrode having first and second layers. The first layer of the...
7563667 Method for fabricating semiconductor device  
In a method for forming a semiconductor device, a device isolation layer is formed in a capacitor region of a silicon substrate, and a bottom electrode and a dielectric layer are formed on the...
7560332 Integrated circuit capacitor structure  
Embodiments of the invention include a MIM capacitor that has a high capacitance that can be manufactured without the problems that affected the prior art. Such a capacitor includes an upper...
7557002 Methods of forming transistor devices  
Some embodiments include formation of at least one cavity in a first semiconductor material, followed by epitaxially growing a second semiconductor material over the first semiconductor material...
7557001 Semiconductor processing methods  
The invention includes methods of forming electrically conductive material between line constructions associated with a peripheral region or a pitch region of a semiconductor substrate. The...
7555829 Method for adjusting an output parameter of a circuit  
Electro-thermal trimming of thermally-trimmable resistors is used to trim one or more of the plurality of resistors in or associated with an analog electric circuit. The TCR of each of a subset of...
7553735 Scalable high performance non-volatile memory cells using multi-mechanism carrier transport  
A plurality of select gates are formed over a substrate. In one embodiment, the select gates are formed vertically on the sidewalls of trenches. The substrate includes a plurality of diffusion...
7550344 Semiconductor device and method for fabricating the same  
A semiconductor device includes: a lower hydrogen-barrier film; a capacitor formed on the lower hydrogen-barrier film and including a lower electrode, a capacitive insulating film, and an upper...
7544579 System and method for faceting the corners of a resistor protect layer to reduce vertical step height  
A system and method is disclosed for providing a resistor protect layer to protect a thin film resistor in a semiconductor device. A thin film resistor is formed on a dielectric layer and a...
7544562 Method for manufacturing a capacitor electrode structure  
A method for manufacturing a capacitor electrode structure, according to which the following steps are executed: A substrate is provided, which comprises contact pads arranged in lines and rows on...
7538411 Integrated circuit including resistivity changing memory cells  
Wordline stacks are arranged parallel at a distance from one another on a substrate surface. Bitlines are arranged transversely to the wordline stacks at a distance from one another. Source/drain...
7538397 Semiconductor device and method for fabricating the same  
A semiconductor device includes a resistor element covered by a silicon oxide film. In the semiconductor device, with respective gate electrodes of MIS transistors and impurity doped layers, i.e.,...
7538005 Semiconductor device and method for fabricating the same  
A semiconductor device is composed of: an interconnect made of a first conductive film and a second conductive film that are stacked in sequence from the interconnect underside on an insulating...
7537991 Salicided MOS device and one-sided salicided MOS device, and simultaneous fabrication method thereof  
A method of fabricating a salicided MOS and a one-sided salicided MOS device on a semiconductor substrate. A conformal oxide layer and an organic layer are sequentially formed on first and second...
7531416 Thick film capacitors on ceramic interconnect substrates  
Thick-film capacitors are formed on ceramic interconnect substrates having high capacitance densities and other desirable electrical and physical properties. The capacitor dielectrics are fired at...
7531407 Semiconductor integrated circuit devices having high-Q wafer backside inductors and methods of fabricating same  
Methods are provided for fabricating semiconductor IC (integrated circuit) chips having high-Q on-chip inductors formed on the chip backside and connected to integrated circuits on the chip...
7531406 Method for fabricating an electrical component  
An electrical component, such as a DRAM semiconductor memory or a field-effect transistor is fabricated. At least one capacitor having a dielectric ( 130 ) and at least one connection electrode (...
7531405 Method of manufacturing a dielectric layer and corresponding semiconductor device  
A polycrystalline dielectric layer is formed wherein the dielectric layer comprises a first dielectric material containing an oxide or nitride and a second material contributing to less than 1% in...
7528034 Method for forming ferroelectric capacitor, ferroelectric capacitor and electronic device  
A method for forming a ferroelectric capacitor includes the steps of (a) forming a first conductive layer above a base substrate, (b) forming, on the first conductive layer, a ferroelectric layer...
7528033 Semiconductor device with a dummy gate and a method of manufacturing a semiconductor device with a dummy gate  
A dummy gate may be formed over an isolation layer. A sidewall spacer may be formed next to the dummy gate. The dummy gate and the sidewall spacer may substantially cover or completely cover the...
7528032 Method for manufacturing semiconductor device  
In a method of manufacturing a semiconductor device, a polycrystalline silicon film is deposited on a gate insulating film formed over a substrate and is doped with a P-type impurity to form the...
7527985 Method for manufacturing a resistor random access memory with reduced active area and reduced contact areas  
A method for manufacturing a memory device comprises patterning a dielectric layer and a conductive layer to align near the center of the top surface of a first contact drain plug and near the...
7524774 Manufacturing method of semiconductor device, semiconductor manufacturing apparatus, plasma nitridation method, computer recording medium, and program  
An object of the present invention is to prevent an increase in film thickness and inhibit a reduction in capacity of a capacitor. In a semiconductor device having a capacitor, the capacitor...
7524722 Resistance type memory device and fabricating method and operating method thereof  
A resistance type memory device is provided. The resistance type memory device is disposed on a substrate and includes a tungsten electrode, an upper electrode, and a tungsten oxide layer. The...
7517703 Method for forming ferroelectric memory device  
A ferroelectric memory device and a method of forming the same are provided. At least two lower electrode patterns are formed on an interlayer insulating layer covering a semiconductor substrate. A...
7514334 Thin film plate phase change RAM circuit and manufacturing method  
A memory device comprising a access circuits, an electrode layer over the access circuits, an array of phase change memory bridges over the electrode layer, and a plurality of bit lines over the...
7514315 Methods of forming capacitor structures having aluminum oxide diffusion barriers  
A multilayer electrode structure has a conductive layer including aluminum, an oxide layer formed on the conductive layer, and an oxygen diffusion barrier layer. The oxide layer includes zirconium...
7510929 Method for making memory cell device  
A memory cell device, including a memory material element switchable between electrical property states by the application of energy, includes depositing an electrical conductor layer, depositing...
7510928 Dielectric trenches, nickel/tantalum oxide structures, and chemical mechanical polishing techniques  
A portion of a conductive layer ( 310, 910 ) provides a capacitor electrode ( 310.0, 910.0 ). Dielectric trenches ( 410, 414, 510 ) are formed in the conductive layer to insulate the capacitor...
7505240 Overcurrent protection device for semiconductor element  
An overcurrent protecting device for protecting a semiconductor element from an overcurrent includes: the semiconductor element; a shunt resistor for detecting the overcurrent when the electric...