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6849464 |
Method of fabricating a multilayer dielectric tunnel barrier structure
A multilayer dielectric tunnel barrier structure and a method for its formation which may be used in non-volatile magnetic memory elements comprises an ALD deposited first nitride junction layer...
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6844228 |
Manufacturing method of a semiconductor device capable of accurately setting a resistance value of a resistance element
A photoresist ( 6 ) is formed on an element isolation insulating film ( 2 ) so as to cover the upper and side surfaces of a polysilicon film ( 4 R) which functions as a resistance element. With the...
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6844229 |
Method of manufacturing semiconductor device having storage electrode of capacitor
A method of manufacturing a semiconductor device having a storage electrode of a capacitor is provided. The method includes the steps of: forming a contact hole perforating through an interlayer...
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6841846 |
Antifuse structure and a method of forming an antifuse structure
The present invention comprises an antifuse having a hemispherical grained (HSG) layer and a method of forming antifuse having a hemispherical grained (HSG) layer. The antifuse of the present...
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6841396 |
VIA0 etch process for FRAM integration
A ferroelectric memory device comprises a logic programmable capacitance reference circuit. The circuit is adapted to generate a reference voltage during a sense mode of operation, wherein the...
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6833299 |
Method of fabricating a stacked poly-poly and MOS capacitor using a sige integration scheme
A stacked Poly-Poly/MOS capacitor useful as a component in a BiCMOS device comprising a semiconductor substrate having a region of a first conductivity-type formed in a surface thereof; a gate...
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6833301 |
Semiconductor device with an improved gate electrode pattern and a method of manufacturing the same
Disclosed is a semiconductor device and a process for producing a semiconductor device using a gate electrode such as an SRAM, wherein a gate electrode pattern is formed with fidelity to a reticle...
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6830970 |
Inductance and via forming in a monolithic circuit
A method for manufacturing, in a monolithic circuit including a substrate, an inductance and a through via, including the step of forming, from a first surface of the substrate, at least one trench...
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6828188 |
Semiconductor device with high- and low-density regions of transistor elements on single semiconductor substrate, and method of manufacturing such semiconductor device
A semiconductor device manufacturing process for forming a semiconductor device having a high density region and a low density region of transistor elements, includes forming a gate oxide film and...
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6825092 |
Semiconductor device having passive elements and method of making same
A semiconductor device and a method of making a semiconductor device. A damascene metal layer ( 16 ) is formed in an insulating dielectric layer ( 12 ), which is in direct electrical communication...
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6825091 |
Semiconductor memory device and method of manufacturing same
A semiconductor memory device and a method of manufacturing same, wherein landing pads are formed to contact source/drain regions of an access transistor in a memory cell array area and a first...
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6825518 |
Capacitor in semiconductor device and method for fabricating the same
A capacitor in a semiconductor device and a method for fabricating the same is disclosed. Disclosed the method for fabricating the capacitor in a semiconductor device comprises the steps of:...
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6825082 |
Ferroelectric memory device and method of forming the same
A ferroelectric memory device along with a method of forming the same are provided. A first interlayer insulating layer is formed on a semiconductor substrate. A buried contact structure is formed...
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6818524 |
Method of improving alignment for semiconductor fabrication
A method of improving alignment for the fabrication of bit line contacts (CBs) is disclosed. A substrate including a memory array area and a peripheral area is provided. A plurality of columns of...
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6815306 |
Floating anode DC electrolytic capacitor
The present invention is directed to an electrolytic capacitor having a novel floating anode between the cathode and the powered anode of the capacitor, resulting in a single capacitor having a...
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6812087 |
Methods of forming non-volatile resistance variable devices and methods of forming silver selenide comprising structures
A method of forming a non-volatile resistance variable device includes forming a patterned mass comprising elemental silver over a substrate. A layer comprising elemental selenium is formed over...
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6806135 |
Method of manufacturing a semiconductor device using a two-step deposition process
The present invention discloses a method of manufacturing a semiconductor device having an upper capacitor electrode and a node resistor, including depositing a thin film at a first deposition rate...
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6803292 |
Method for manufacturing a semiconductor device and semiconductor device with overlay mark
In a method for forming a semiconductor device and a semiconductor device having an overlay mark, a first pattern for the semiconductor device is formed in a semiconductor device formation region...
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6797584 |
Semiconductor device and method of fabricating the same
First and second transistors are formed on the principal surface of the semiconductor substrate, and an insulating film is formed over the principal surface of the semiconductor substrate so as to...
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6797545 |
Method and apparatus for fabricating electronic device
Logic circuitry formed in street areas between adjacent fabricated electronic devices may be used as auxiliary or redundant components to salvage one or more otherwise defective devices. Logic...
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6798006 |
Semiconductor device and manufacturing method thereof
A semiconductor device includes a diffusion region in a semiconductor substrate, a gate insulation film on the semiconductor substrate, a gate electrode on the gate insulation film, an interlayer...
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6797554 |
Method of manufacturing semiconductor integrated circuit having capacitor and silicided and non-silicided transistors
A method of manufacturing a semiconductor integrated circuit including a silicided and non-silicided MOS transistor together with a capacitor is provided. An insulating film for forming a capacitor...
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6794727 |
Single receiving side contactless electronic module continuous manufacturing process
A process for continuous manufacture of electronic modules ( 6 ) including the steps of providing a microcircuit and antenna receiving side on a continuous strip ( 8 ) and module surface areas;...
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6794199 |
Ferroelectric memory and method for fabricating the same
A first insulating hydrogen barrier film is filled between lower electrodes of some ferroelectric capacitors arranged along one direction out of a word line direction and a bit line direction among...
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6794243 |
Method for manufacturing a ferroelectric capacitor
It is an object of the present invention to provide a ferroelectric capacitor which maintains high ferroelecticity. A silicon oxide layer 2 , a lower electrode 12 , a ferroelectric layer 8 and...
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6791135 |
Semiconductor device with improved capacitive element and method of forming the same
A semiconductor device includes: a digital circuit including a first capacitive element of metal-insulator-metal structure, and an analogue circuit including a second capacitive element of...
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6787459 |
Method for fabricating a semiconductor device
There is provided a method of fabricating a semiconductor device whereby fine patterns are formed with high dimensional accuracy by means of multiple exposures, using a phase shift mask and a trim...
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6787411 |
Method of manufacturing semiconductor memory device and semiconductor memory device
Disclosed are a gain cell structure capable of making a memory cell compact in size and a method of manufacturing the same at low cost. A memory cell is constituted of a reading MIS transistor and...
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6784044 |
High dopant concentration diffused resistor and method of manufacture therefor
The present invention provides a high dopant concentration diffused resistor, a method of manufacture therefor, and an integrated circuit including the same. In one embodiment of the invention, the...
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6780703 |
Method for forming a semiconductor device
An etch stop layer ( 12 ) is formed over a semiconductor substrate ( 10 ). An epitaxial layer ( 14 ) is formed overlying the etch stop layer ( 12 ). The combination of the epitaxial layer ( 14 ),...
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6781179 |
Semiconductor device having a capacitor comprising an electrode with an iridium oxide film as an oxygen barrier film
The semiconductor memory device of the present invention includes: an interlayer insulating film formed on a semiconductor substrate; a contact plug formed to extend through the interlayer...
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6780652 |
Self-aligned MRAM contact and method of fabrication
A method of forming self-aligned MRAM contacts is disclosed. MRAM stacks including an upper layer of a conductive material are formed over portions of integrated circuitry. An insulating material...
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6780726 |
Scratch protection for direct contact sensors
In capacitive sensor circuits where physical contact is required and excess pressure may be inadvertently applied to the sensor surface, aluminum is not sufficiently hard to provide “scratch”...
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6777284 |
Method of manufacturing an electronic device
The present invention provides a method of manufacturing an electronic device provided with metal regions, that are mutually separated by air spaces. In the method a first isolating layer, a seed...
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6777285 |
Memory device and method for fabricating the same
A memory device and a method for fabricating the same are described. The memory device includes a substrate, buried bit lines, word line structures, a dielectric layer, conductive lines in trenches...
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6777286 |
Compact SRAM cell incorporating refractory metal-silicon-nitrogen resistive elements and method for fabricating
A compact SRAM cell that incorporates refractory metal-silicon-nitrogen resistive elements as its pull-up transistors is described which includes a semi-conducting substrate, a pair of NMOS...
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6773978 |
Methods for improved metal gate fabrication
Methods are disclosed for manufacturing semiconductor devices with silicide metal gates, wherein a single-step anneal is used to react a metal such as cobalt or nickel with substantially all of a...
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6774004 |
Nano-scale resistance cross-point memory array
A method of fabricating a nano-scale resistance cross-point memory array includes preparing a silicon substrate; depositing silicon oxide on the substrate to a predetermined thickness; forming a...
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6770924 |
Amorphous TiN films for an integrated capacitor dielectric/bottom plate using high dielectric constant materials
The present invention provides a capacitor formed in a dynamic random access memory (DRAM) semiconductor device, the capacitor comprising: a polysilicon layer to making contact with a diffusion...
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6770524 |
Method to enhance performance of thermal resistor device
An apparatus including a contact on a substrate, a dielectric material overlying the contact, a phase change element overlying the dielectric material on a substrate, and a heater element disposed...
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6767785 |
Method of making a resistor, method of making a diode, and SRAM circuitry and other integrated circuitry
Disclosed are methods of forming resistors and diodes from semiconductive material, and static random access memory (SRAM) cells incorporating resistors, and to integrated circuitry incorporating...
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6767783 |
Self-aligned transistor and diode topologies in silicon carbide through the use of selective epitaxy or selective implantation
A method of making vertical diodes and transistors in SiC is provided. The method according to the invention uses a mask (e.g., a mask that has been previously used for etching features into the...
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6764910 |
Structure of semiconductor device and method for manufacturing the same
A semiconductor device and a method for manufacturing the same are provided. The structure of a semiconductor device includes gate electrodes having a T-shaped structure comprised of first and...
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6764896 |
Semiconductor manufacturing method including patterning a capacitor lower electrode by chemical etching
Sputter etching of silicon oxide films is performed with an etching gas such as C 4 F 8 . Since a silicon nitride film is little etched at this time, when the etching is performed under a condition...
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6764862 |
Method of forming ferroelectric random access memory device
The present invention discloses a method of forming a ferroelectric random access memory (FRAM) of a capacitor over bit-line (COB) structure. In the method, a capacitor contact plug is formed at a...
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6762087 |
Process for manufacturing an integrated circuit including a dual-damascene structure and a capacitor
The present invention is directed to a process for forming a dual damascene structure and a capacitor. The process includes forming a stack including insulating layers and a stop layer. The stack...
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6762088 |
High Q inductor with faraday shield and dielectric well buried in substrate
Inductor losses to a semiconducting substrate are eliminated in an IC structure by etching a well into the substrate down to the insulating layer coating the substrate and fabricating a grounded...
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6762089 |
Method for manufacturing a memory device
The invention provides a memory device including a memory substrate, an insulating layer, a shielding metal layer, a second dielectric layer and a second metal layer. The memory substrate includes...
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6759291 |
Self-aligned near surface strap for high density trench DRAMS
A method and structure for a dynamic random access memory device comprising a storage trench, a storage conductor within the storage trench, a lip strap connected to the storage conductor, and a...
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6759333 |
Semiconductor device and method of manufacturing the same
A semiconductor device comprises a first conductor formed inside or on the top surface of a semiconductor substrate; an insulating film formed on the top surface of said semiconductor substrate or...
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