Matches 251 - 300 out of 1039 < 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 >
Match Document Document Title
7098101 Method of forming PrxCa1−xMnO3 thin films having a PrMnO3/CaMnO3 super lattice structure using metalorganic chemical vapor deposition  
A method of forming Pr X Ca 1-x MnO 3 thin films having a PMO/CMO super lattice structure using metalorganic chemical vapor deposition includes preparing organometallic compounds and solvents and...
7094611 Method of producing ferroelectric capacitor  
A method of producing a ferroelectric capacitor includes preparing a semiconductor substrate having MOSFETs with an impurity diffused area in a memory cell area and a peripheral circuit area;...
7087519 Method for forming contact having low resistivity using porous plug and method for forming semiconductor devices using the same  
A method for forming a contact of a semiconductor device is disclosed. A first interlevel dielectric (ILD) layer is formed on a conductive region, e.g., an active region. The first ILD layer is...
7087438 Encapsulation of conductive lines of semiconductor devices  
The invention relates to a method of encapsulating conductive lines of semiconductor devices and a structure thereof. An encapsulating protective material, such as TaN, Ta, Ti, TiN, or combinations...
7087479 Method of forming integrated circuit contacts  
Contacts are formed to integrated circuit devices by first forming a conductive layer ( 80 ) on a semiconductor device. An optional dielectric layer ( 130 ) is formed over the conductive layer and...
7083989 Thin-film magnetic head and method of forming the same  
In a thin-film magnetic head having a multilayered film developing a magnetoresistive effect, which is present between an upper shielding layer and a lower shielding layer both formed above an...
7078238 Method for manufacturing magnetic sensor  
Magnetoresistive devices are formed on the insulating surface of a substrate made of silicon. The devices are connected in series through an insulating film using a wiring layer formed on the...
7078243 Shielding arrangement to protect a circuit from stray magnetic fields  
A shielding arrangement for protecting a circuit containing magnetically sensitive materials from external stray magnetic fields. A shield of a material having a relatively high permeability is...
7078289 Method for fabricating a deep trench capacitor of DRAM device  
A method for fabricating a deep trench capacitor of DRAM devices is disclosed. A substrate with a deep trench formed therein is provided. The trench is then doped to form a buried plate electrode...
7074667 Semiconductor memory device including storage nodes and resistors and method of manufacturing the same  
A semiconductor memory device according to embodiments of the invention includes storage nodes and resistors. A method of manufacturing the semiconductor memory device according to some embodiments...
7074666 Borderless contact structures  
A borderless contact structure and method of fabricating the structure, the method including: (a) providing a substrate; (b) forming a polysilicon line on the substrate, the polysilicon line having...
7071052 Resistor with reduced leakage  
A resistor 100 is formed in a semiconductor layer 106 , e.g., a silicon layer on an SOI substrate. A body region 108 is formed in a portion of the semiconductor layer 106 and is doped to a...
7064028 Semiconductor memory and method of producing the same  
A semiconductor memory incorporates cylinder-type stacked capacitors. Each capacitor has a lower electrode and an upper electrode facing each other via a dielectric film. The lower electrode of...
7064027 Method and structure to use an etch resistant liner on transistor gate structure to achieve high device performance  
An etch resistant liner covering sidewalls of a transistor gate stack and along a portion of the substrate at a base of the transistor gate stack. The liner prevents silicide formation on the...
7060552 Memory device with hydrogen-blocked ferroelectric capacitor  
A semiconductor memory device of the present invention includes: a semiconductor substrate; a memory cell capacitor for storing data, including a first electrode provided above the semiconductor...
7056801 Radio frequency integrated circuit, and method for manufacturing the same  
The present invention discloses a radio frequency integrated circuit and a method for manufacturing the same. The radio frequency integrated circuit is manufactured by forming an inductor and a...
7052925 Method for manufacturing self-compensating resistors within an integrated circuit  
A method for manufacturing a self-compensating resistor within an integrated circuit is disclosed. The self-compensating resistor includes a first resistor and a second resistor. The first resistor...
7049191 Method for protecting against oxidation of a conductive layer in said device  
In a semiconductor device including a first conductive layer, the first conductive layer is treated with a nitrogen/hydrogen plasma before an additional layer is deposited thereover. The treatment...
7045420 Semiconductor device comprising capacitor and method of fabricating the same  
A high density semiconductor device is formed with a constant capacitor capacitance. The semiconductor device includes a memory cell region and a peripheral circuit region. An insulating film,...
7041550 Device and method for protecting against oxidation of a conductive layer in said device  
In a semiconductor device including a first conductive layer, the first conductive layer is treated with a nitrogen/hydrogen plasma before an additional layer is deposited thereover. The treatment...
7042066 Dual-trench isolated crosspoint memory array  
A memory array dual-trench isolation structure and a method for forming the same have been provided. The method comprises: forming a p-doped silicon (p-Si) substrate; forming an n-doped (n+) Si...
7037772 Method of manufacturing an integrated circuit including capacitor with high permittivity capacitor dielectric  
A decoupling capacitor is formed on a semiconductor substrate that includes a silicon surface layer. A substantially flat bottom electrode is formed in a portion of the semiconductor surface layer....
7033883 Placement method for decoupling capacitors  
A method for placing decoupling capacitors in an integrated circuit during placement and routing stage. In the placement method, a floor plan of the integrated circuit is created, and includes the...
7033882 Method of forming on-chip decoupling capacitor by selectively etching grain boundaries in electrode  
On-chip decoupling capacitor structures, and methods of fabricating such decoupling capacitors are disclosed. On-chip decoupling capacitors help to reduce or prevent L di/dt voltage droop on the...
7033880 Inductor for semiconductor device and method of making same  
An inductor for a semiconductor device is formed within a groove in an insulating layer on a semiconductor substrate. A number of lower conductive lines are formed across the groove. A cylindrical...
7033881 Method for fabricating magnetic field concentrators as liners around conductive wires in microelectronic devices  
In an MRAM cell, the writing current is encased in a low-reluctance material that is treated in one of several ways to render the material closest to the storage element ineffective to carry...
7034353 Methods for enhancing capacitors having roughened features to increase charge-storage capacity  
Structures and methods for making a semiconductor structure are discussed. The semiconductor structure includes a rough surface having protrusions formed from an undoped silicon film. If the...
7029962 Methods for forming a high performance capacitor  
Embodiments of methods of forming capacitors are generally described herein. Other embodiments may be described and claimed.
7029970 Method for fabricating semiconductor device  
A method for fabricating a semiconductor device capable of preventing an electric short between lower electrodes caused by leaning lower electrodes, or lifted lower electrodes and of securing a...
7030440 Single poly-si process for DRAM by deep N-well (NW) plate  
A method for forming, within a double well formation, an array of DRAM memory cells isolated from each other by shallow trench isolation (STI), each cell comprising a MOSFET access transistor and a...
7026206 Method of making resistive element having a stable contact resistance  
A semiconductor apparatus includes a MOS transistor and a resistive element having insulative first polysilicon and conductive second polysilicon films, an insulating film for a resistive element,...
7022531 Semiconductor memory device and method of fabricating the same  
A semiconductor memory device including a memory cell block having a plurality of memory transistors formed on a semiconductor substrate. The memory transistors include first and second...
7022566 Integrated radio frequency circuits  
An RF circuit may be formed over a triple well that creates two reverse biased junctions. By adjusting the bias across the junctions, the capacitance across the junctions can be reduced, reducing...
7018911 Methods for fabrication for phase-changeable memory devices having phase-changeable material regions with lateral contacts  
A phase-changeable memory device comprises a substrate and an access transistor formed in and/or on the substrate. Laterally spaced apart first and second conductive patterns are disposed on the...
7018889 Latch-up prevention for memory cells  
An SRAM memory cell is provided having a pair of cross-coupled CMOS inverters. The sources of the pull-up transistors forming each of the CMOS inverters are coupled to V CC through parasitic...
7015087 Gate-contact structure and method for forming the same  
A gate-contact structure and a method for forming the same are provided. The structure includes a device isolation layer pattern formed at a semiconductor substrate to define an active region; and...
7015525 Folded bit line DRAM with vertical ultra thin body transistors  
A folded bit line DRAM device is provided. The folded bit line DRAM device includes an array of memory cells. Each memory cell in the array of memory cells includes a pillar extending outwardly...
7011999 Method of manufacturing an integrated circuit device including forming an oxidation resistant film over an isolation region and subsequently forming a gate insulating film of a misfet  
A semiconductor integrated circuit device having a capacitor element, including a lower electrode provided over an element isolation region of a principal surface of a semiconductor substrate, and...
7012294 Semiconductor constructions  
The invention encompasses a method of forming a silicon nitride layer. A substrate is provided which comprises a first mass and a second mass. The first mass comprises silicon and the second mass...
7005342 Method to fabricate surface p-channel CMOS  
An improved method of making CMOS surface channel transistors using fewer masking steps. In-situ doped poly silicon deposition can be used to reduce problems with poly depletion effects in...
6998306 Semiconductor memory device having a multiple tunnel junction pattern and method of fabricating the same  
The present invention discloses a semiconductor memory device having a multiple tunnel junction pattern and a method of forming the same. The semiconductor memory device includes a unit cell...
6990725 Fabrication approaches for the formation of planar inductors and transformers  
This invention relates to the fabrication of planar inductive components whereby the design in cross-section describes a conductor surrounded by magnetic material along the length of the conductor;...
6987043 Method of manufacturing semiconductor device having a plurality of trench-type data storage capacitors  
A vertical MIS is provided immediately above a trench-type capacitor provided in a memory cell forming region of a semiconductor substrate, and a lateral nMIS is provided in the peripheral circuit...
6984543 Method of producing laminated PTC thermistor  
A method of producing a laminated PTC thermistor involves alternately laminating electroconductive pastes to form internal electrodes and ceramic green sheets to form semiconductor ceramic layers...
6979612 Semiconductor devices and manufacturing methods  
A semiconductor device in certain embodiments includes an insulating layer provided above the upper surface of a semiconductor substrate, and a capacitive element section and a resistance element...
6979615 System and method for forming a semiconductor with an analog capacitor using fewer structure steps  
A method for manufacturing a semiconductor device that comprises forming an oxide layer over a substrate. A polysilicon layer is disposed outwardly from the oxide layer, wherein the polysilicon...
6979608 Method of manufacturing an on-chip inductor having improved quality factor  
An on-chip inductor may be fabricated by creating at least one dielectric layer, creating at least one conductive winding on the at least one dielectric layer and creating: (1) a P-well layer...
6977196 Micro-electromechanical switch fabricated by simultaneous formation of a resistor and bottom electrode  
The present invention provides a method and product-by-method of integrating a bias resistor in circuit with a bottom electrode of a micro-electromechanical switch on a silicon substrate. The...
6974708 Oxidation structure/method to fabricate a high-performance magnetic tunneling junction MRAM  
An MTJ (magnetic tunneling junction) MRAM (magnetic random access memory) has a tunneling barrier layer of substantially uniform and homogeneous Al 2 O 3 stoichiometry. The barrier layer is formed...
6974743 Method of making encapsulated spacers in vertical pass gate DRAM and damascene logic gates  
Semiconductor devices having improved isolation are provided along with methods of fabricating such semiconductor devices. The improved isolation includes an encapsulated spacer formed within a...
Matches 251 - 300 out of 1039 < 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 >