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7619258 |
Display device
In a light emitting device using a light emitting element, the invention provides a sealing structure capable of preventing ingress of moisture from the outside and obtaining adequate reliability....
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7618905 |
Heterostructure self-assembled quantum dot
A method and device for a heterostructure self-assembled quantum dot based on inherent strain present in underlying self-assembled quantum dots for the purpose of modification and control of the...
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7615796 |
Light emitting diode having an electrode buffer layer
A light emitting diode (LED) utilizes an adhesive layer to adhere a light emitting layer to a substrate. The LED further comprises an electrode buffer layer to enhance the adhesion between the...
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7615388 |
Electroluminescent element
The main object of the present invention is to provide a method for producing an EL element for realizing the high luminous efficiency, the high light takeout efficiency, the simplicity of the...
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7615387 |
Addition curing silicone composition capable of producing a cured product with excellent crack resistance
Provided is a silicone composition, including: (A) an organopolysiloxane represented by an average composition formula R 1 n SiZ [(4−n)/2] (in which, R 1 represents a monovalent hydrocarbon...
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7611969 |
Generation and applications of negative dielectric constant materials
A negative dielectric is induced by the application of a dc bias-electric field in aggregates of oxide nano-particles whose surfaces have been specially treated. The magnitude of the dielectric...
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7611914 |
Method of fabricating turning mirror using sacrificial spacer layer and device made therefrom
The present invention is a method of fabricating a waveguide using a sacrificial spacer layer. The first step in this process is to fabricate the underlying optical semiconductor structure. A...
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7608472 |
Light emitting element and method of making same
A light emitting element has a substrate of gallium oxides and a pn-junction formed on the substrate. The substrate is of gallium oxides represented by: (Al X In Y Ga (1-X-Y) ) 2 O 3 where...
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7608470 |
Interconnection device including one or more embedded vias and method of producing the same
“An interconnection device comprises a Systems In Package (SIP) device, or Systems in Chip (SIC) device, including one or more embedded vias extending through a base substrate. A process to...
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7605010 |
Integrated silicon optical isolator
The present invention provides an optical isolator and a method of forming the optical isolator. Embodiments of the optical isolator include a silicon layer having at least one trench formed...
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7598530 |
Light emitting diode with high illumination
A light emitting diode ( 80 ) includes a first and a second semiconductor structures ( 30, 40 ), and an adhesive layer ( 34, 46 ) between the first and the second semiconductor structures. The...
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7598108 |
Gallium nitride-on-silicon interface using multiple aluminum compound buffer layers
A thermal expansion interface between silicon (Si) and gallium nitride (GaN) films using multiple buffer layers of aluminum compounds has been provided, along with an associated fabrication method....
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7595510 |
Semiconductor laser module improved in high frequency response
The present invention reduces the radiation noise and the degradation of the optical waveform appeared in the output of the laser module. The laser module of the present invention comprises the...
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7595215 |
CMOS image sensor and method for manufacturing the same
A CMOS image sensor and a method for manufacturing the same are provided. The CMOS image sensor enlarges an area of a real image and prevents interference between adjacent pixels by forming a...
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7592633 |
Semiconductor light emitting device
A semiconductor lamination portion is formed on a substrate by laminating semiconductor layers so as to form a light emitting layer, and a plurality of light emitting units are formed by separating...
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7592193 |
Light emitting device
In an active matrix type light emitting device, a top surface exit type light emitting device in which an anode formed at an upper portion of an organic compound layer becomes a light exit...
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7592192 |
White light emitting diode (white LED) and method of manufacturing white LED
Disclosed is a white light emitting diode possessing a phosphor layer to convert blue light into yellow light, provided on a blue light emitting diode, wherein the phosphor layer possesses an...
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7591937 |
Method of fixing macro-objects to an electricity conducting- or semi-conducting surface by means of electrografting, surfaces thus obtained and applications thereof
The invention relates to a method of fixing macro-objects to an electricity conducting- or semi-conducting surface by means of electrografting. The invention also relates to the electricity...
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7589355 |
Light emitting diode, method of manufacturing light emitting diode, light emitting diode backlight, light emitting diode illuminating device, light emitting diode display, and electronic apparatus
A light emitting diode is provided. The light emitting diode includes a semiconductor layer that forms a light emitting diode structure and has a major face and an end face inclined at an angle θ...
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7585690 |
Process for producing group III nitride compound semiconductor light emitting device, group III nitride compound semiconductor light emitting device and lamp
A process for producing a group III nitride compound semiconductor light emitting device, the group III nitride compound semiconductor light emitting device and a lamp, having excellent...
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7582908 |
Nitride semiconductor device and manufacturing method thereof
A nitride semiconductor device and its manufacturing method are provided which are capable of achieving low-resistance ohmic properties and high adhesion. A nitride semiconductor device has an...
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7582497 |
Method of manufacturing micro-optic device
A micro-optic device including a complicate structure and a movable mirror is made to be manufactured in a reduced length of time. A silicon substrate and a single crystal silicon device layer with...
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7579205 |
Method of fabricating light emitting device and thus-fabricated light emitting device
A light emitting device wafer having a light emitting layer section 24 having an AlGaInP-base double heterostructure, and a GaP light extraction layer 20 disposed on the light emitting layer...
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7579199 |
TFT, flat panel display device having the same, method of manufacturing TFT, method of manufacturing flat panel display device, and method of manufacturing donor sheet
A flexible flat panel display where nanoparticles are used for the active layer of the TFTs and the substrate is flexible and can be manufactured at room temperature, a flat panel display device...
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7579198 |
Method for making backlight module
An exemplary method for making a backlight module, the method includes steps in following order: providing a transparent base sheet and at least one light emitting diode; punching the base sheet to...
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7579051 |
Method for manufacturing an electron emitter
A method for manufacturing an electron emitter, the method includes discharging a droplet of a function liquid containing a material for forming the conductive film onto a discharge surface of the...
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7576364 |
Display device and method of manufacturing the same
A display device and its method of manufacture. The display device is formed to include a substrate having an upper surface, a recess region having a bottom surface and sidewalls, a light-emitting...
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7575944 |
Method of manufacturing nitride-based semiconductor light emitting diode
Provided is a method of manufacturing a nitride-based semiconductor LED including sequentially forming an n-type nitride semiconductor layer, an active layer, and a p-type nitride semiconductor...
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7575943 |
Quantum dot laser diode and method of manufacturing the same
Provided are a quantum dot laser diode and a method of manufacturing the same. The method of manufacturing a quantum dot laser diode includes the steps of: forming a grating structure layer...
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7575942 |
Epitaxial substrate, semiconductor element, manufacturing method for epitaxial substrate and method for unevenly distributing dislocations in group III nitride crystal
An epitaxial substrate used to generate a group III nitride crystal having excellent crystal quality. An upper layer of a group III nitride is formed on a sapphire base with an off angle, and after...
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7573076 |
Vertical gallium-nitride based light emitting diode
A vertical GaN-based LED and a method of manufacturing the same are provided. The vertical GaN-based LED can prevent the damage of an n-type GaN layer contacting an n-type electrode, thereby stably...
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7572654 |
Method for making light emitting diode
An exemplary light emitting diode ( 30 ) includes a light output unit ( 31 ), an optical lens ( 33 ) and a reflective film ( 35 ). The optical lens includes a light input surface ( 331 ) facing the...
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7572653 |
Method of fabricating light emitting diode
Disclosed herein is a method of fabricating a light emitting diode. The method comprises preparing a substrate, forming a lower semiconductor layer, an active layer and an upper semiconductor layer...
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7572652 |
Light emitting element and production method thereof
A light emitting element having a light emitting element portion formed of a group III nitride-based compound semiconductor and having a layer to emit light. The light emitting element portion is...
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7569420 |
Flip-chip packaging method for light emitting diode with eutectic layer not overlapping insulating layer
A packaging structure and method for a light emitting diode is provided. The present invention uses flip-chip and eutectic bonding technology to attach a LED to a thermal and electrical conducting...
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7569405 |
Method of manufacturing light emitting device
A method of manufacturing a light emitting device is provided which requires low cost, is easy, and has high throughput. The method of manufacturing a light emitting device is characterized in...
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7566579 |
Method of fabricating semiconductor devices with a multi-role facilitation layer
A method of growing semiconductor materials in the Indium, Aluminium, Gallium Nitride (InAlGaN) material system and to devices made therefrom, in particular optical devices in the ultraviolet to...
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7563641 |
Laminated light-emitting diode display device and manufacturing method thereof
A laminated light-emitting diode display device and a manufacturing method thereof are described. The laminated light-emitting diode display device has an insulator, a circuitry device placed on...
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7563625 |
Method of making light-emitting diodes (LEDs) with improved light extraction by roughening
Methods for fabricating a semiconductor light-emitting diode (LED) device with increased light extraction are provided. The method generally includes applying a mask to a surface of an LED wafer,...
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7560803 |
Method for fabricating semiconductor device and apparatus for fabricating the same
In a semiconductor-device fabrication method, a plurality of recessed portions are first formed in the principal surface of a substrate. Then, a through hole, passing through the substrate in the...
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7560296 |
Process for producing an epitalixal layer of galium nitride
A method of manufacturing a low defect density GaN material comprising at least two step of growing epitaxial layers of GaN with differences in growing conditions, (a.) a first step of growing an...
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7560295 |
Methods for creating gapless inner microlenses, arrays of microlenses, and imagers having same
Methods of fabricating a microlens and/or array of microlenses used to focus light on photosensors, by forming a protective coating over a microlenses precursor material, and etching the protective...
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7560294 |
Light emitting element and method of making same
A light emitting element is provided with a semiconductor layer having a light emitting layer and an uneven surface, and a transparent material formed on the uneven surface. The transparent...
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7556974 |
Optical semiconductor device with multiple quantum well structure
An optical semiconductor device with a multiple quantum well structure, in which well layers and barrier layers comprising various types of semiconductor layers are alternately layered, in which...
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7554126 |
Semiconductor light-emitting element, manufacturing method and mounting method of the same and light-emitting device
An LED chip of the present invention has a structure in which an n-type semiconductor layer and a p-type semiconductor layer are successively formed on the lower face of an element substrate, with...
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7553683 |
Method of forming pre-fabricated wavelength converting elements for semiconductor light emitting devices
A semiconductor light emitting device is provided with a separately fabricated wavelength converting element. The wavelength converting element, of e.g., phosphor and glass, is produced in a sheet...
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7553682 |
Method of manufacturing vertical nitride light emitting device
According to a method of manufacturing a vertical nitride light emitting device, a first conductivity type nitride layer, an active layer and a second conductivity type nitride layer are...
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7550398 |
Semiconductor device and method of fabricating the same
A semiconductor device includes a silicon nitride (SiN) film provided on a crystal surface of a nitride semiconductor, the SiN film having a hydrogen content equal to or smaller than 15 percent.
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7550304 |
Method for manufacturing semiconductor laser element
A method for manufacturing a semiconductor laser element includes forming a semiconductor laminated structure, having an active layer, on a substrate; etching the semiconductor laminated structure...
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7545011 |
Semiconductor mount
A mount for a semiconductor device has a first surface with at least one contact region and a second surface. The mount has a substrate to receive the second surface of the semiconductor device and...
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