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8183064 |
Thin film transistor devices for OLED displays and method for fabricating the same
A system for displaying images. The system includes a thin film transistor (TFT) device including a first gate layer disposed on a first region of a substrate and covered by a first insulating...
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8183575 |
Method and apparatus for providing a patterned electrically conductive and optically transparent or semi-transparent layer over a lighting semiconductor device
A light emitting diode (“LED”) using an electrical conductive and optical transparent or semi-transparent layer to improve overall light output is disclosed. The device includes a first con...
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8183555 |
Semiconductor light emitting device and method for manufacturing the same
A semiconductor light emitting device including a first semiconductor layer including a first type dopant; a second semiconductor layer including the first type dopant on the first semiconductor...
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8183063 |
Organic light emitting device and method of fabricating the same
An organic light emitting device (OLED) and a method of fabricating the same are provided, wherein the OLED includes a thin film transistor having a gate electrode, and source and drain electrodes...
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8182863 |
Deposition method and manufacturing method of light-emitting device
A first substrate including, on one of surfaces, a light absorption layer having metal nitride and a material layer which is formed so as to be in contact with the light absorption layer is...
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8183134 |
Semiconductor device and manufacturing method with improved epitaxial quality of III-V compound on silicon surfaces
Stacking faults are reduced or eliminated by epitaxially growing a III-V compound semiconductor region in a trench followed by capping and annealing the region. The capping layer limits the escape...
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8183066 |
Method and system for large scale manufacture of thin film photovoltaic devices using multi-chamber configuration
A method for large scale manufacture of photovoltaic devices includes loading a substrate into a load lock station and transferring the substrate in a controlled ambient to a first process station....
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8183065 |
LED chip package structure with high-efficiency light emission by rough surfaces and method of making the same
An LED chip package structure with high-efficiency light emission by rough surfaces includes a substrate unit, a light-emitting unit, and a package colloid unit. The substrate unit has a substrate...
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8183073 |
Method of manufacturing a semiconductor device with quantum dots formed by self-assembled growth
The method of manufacturing the semiconductor device comprises the step of forming quantum dots 16 on a base layer 10 by self-assembled growth; the step of irradiating Sb or GaSb to the surface of...
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8178888 |
Semiconductor light emitting devices with high color rendering
A packaged light emitting device (LED) includes a light emitting diode configured to emit primary light having a peak wavelength that is less than about 465 nm and having a shoulder emission...
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8178895 |
Semiconductor light-emiting device and method
A semiconductor light-emitting device can include a submount on which a semiconductor light-emitting element is mounted. The device can have a high light utilization efficiency with high...
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8178886 |
Multi-layered LED epitaxial structure with light emitting unit
A method for manufacturing a semiconductor light emitting device includes: (a) providing a temporary substrate; (b) forming a multi-layered LED epitaxial structure, having at least one light...
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8178370 |
Method and system for large scale manufacture of thin film photovoltaic devices using multi-chamber configuration
A method for large scale manufacture of photovoltaic devices includes loading a substrate into a load lock station and transferring the substrate in a controlled ambient to a first process station....
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8178369 |
Nanoscale multi-junction quantum dot device and fabrication method thereof
The present invention relates to a method of fabricating a nanoscale multi-junction quantum dot device wherein it can minimize constraints depending on the number or shape of patterns and a line...
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8168967 |
Organic light emitting device and method of manufacturing the same
An organic light emitting device and a method of manufacturing the same, the device including: a substrate; a barrier layer; a first electrode; a second electrode; and an organic layer interposed...
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8168454 |
Vertical light emitting diode and method of manufacturing the same
Provided is a vertical LED including an n-electrode; an n-type GaN layer formed under the n-electrode, the n-type GaN layer having a surface coming in contact with the n-electrode, the surface...
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8168455 |
Method for manufacturing light emitting diode
A method for manufacturing light emitting diode (LED) is revealed. By means of wet etching, a plurality of pyramids is formed on epitaxial structure. The depth of the pyramids is beyond a n-type...
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8168453 |
Light emitting diode package and fabrication method thereof
An LED package and a fabrication method therefor. The LED package includes first and second lead frames made of heat and electric conductors, each of the lead frames comprising a planar base and...
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8168516 |
Method of fabricating single crystal gallium nitride semiconductor substrate, nitride gallium semiconductor substrate and nitride semiconductor epitaxial substrate
A method of fabricating a single crystal gallium nitride substrate the step of cutting an ingot of single crystal gallium nitride along predetermined planes to make one or more single crystal...
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8168986 |
GaN-based semiconductor light-emitting element, light-emitting element assembly, light-emitting apparatus, method of driving GaN-based semiconductor light-emitting element, and image display apparatus
A GaN-based semiconductor light-emitting element is provided and includes a first GaN-based compound semiconductor layer; an active layer having a multi-quantum well structure; and a second...
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8164104 |
Light emitting element array and image forming apparatus
A light emitting element array including an active layer commonly used for light emitting element regions, carrier injection layers which are electrically isolated from each other and which are...
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8164083 |
Quantum dot optoelectronic devices with enhanced performance
An optoelectronic device is disclosed which includes a quantum dot layer including plurality of quantum dots which do not have capping layers. This optoelectronic device may be a quantum dot...
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8163571 |
Multi-step deposition control
For providing control of two-step or a multi-step deposition process, a method and a corresponding deposition system is provided comprising providing a deposition process having at least two...
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8163576 |
Nitride semiconductor device having a silicon-containing layer and manufacturing method thereof
A semiconductor device and a manufacturing method thereof are provided which enable reduction and enhanced stability of contact resistance between the back surface of a nitride substrate and an...
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8163575 |
Grown photonic crystals in semiconductor light emitting devices
A photonic crystal is grown within a semiconductor structure, such as a III-nitride structure, which includes a light emitting region disposed between an n-type region and a p-type region. The...
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8163577 |
Methods of forming light emitting devices having current reducing structures
A light emitting device includes a p-type semiconductor layer, an n-type semiconductor layer, and an active region between the n-type semiconductor layer and the p-type semiconductor layer. A...
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8158987 |
Light-emitting diode and method for fabrication thereof
A transparent-substrate light-emitting diode (10) has a light-emitting layer (133) made of a compound semiconductor, wherein the area (A) of a light-extracting surface having formed thereon a first...
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8158447 |
Dual panel type organic electroluminescent display device and method fabricating the same
An organic electroluminescent device includes: a switching element and a driving element connected to each other on a substrate including a pixel region; a planarization layer on the switching...
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8153455 |
Method for enhancing light extraction efficiency of light emitting diodes
A method for enhancing light extraction efficiency of a light emitting diode is disclosed. The method includes the steps of providing a light emitting diode including in sequence a substrate, a...
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8154018 |
Semiconductor device, its manufacture method and template substrate
A semiconductor device includes a ZnO-containing substrate containing Li, a zinc silicate layer formed above the ZnO-containing substrate, and a semiconductor layer epitaxially grown relative to...
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8153456 |
Bifacial solar cell using ion implantation
An improved bifacial solar cell is disclosed. In some embodiments, the front side includes an n-type field surface field, while the back side includes a p-type emitter. In other embodiments, the...
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8153454 |
Fabrication apparatus and fabrication method of semiconductor device produced by heating substrate
A fabrication apparatus and fabrication method of a semiconductor device are provided, allowing the temperature distribution of a substrate to be rendered uniform. The fabrication apparatus for a...
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8148178 |
Method of growing nitride single crystal and method of manufacturing nitride semiconductor light emitting device
There is provided a method of growing a nitride single crystal. A method of growing a nitride single crystal according to an aspect of the invention may include: growing a first nitride single...
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8148723 |
Light-emitting device and manufacturing method thereof
A first conductive film, a first insulating film, a semiconductor film, an impurity semiconductor film, and a second conductive film are stacked in this order (a thin-film stacked body); first...
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8148179 |
Hermetically sealed glass package and method of fabrication
A hermetically sealed glass package and method for manufacturing the hermetically sealed glass package are described herein using an OLED display as an example. In one embodiment, the hermetically...
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8148180 |
Techniques of forming Ohmic contacts on GaN light emitting diodes
A method of forming ohmic contacts on a light emitting diode that features a surface treatment of a substrate includes exposing a surface of a p-type gallium nitride layer to an acid-containing...
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8143170 |
Manufacturing method of semiconductor device
A single crystal semiconductor layer is provided over a base substrate with a second insulating film, a first conductive film, and a first insulating film interposed therebetween; an impurity...
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8143618 |
ZnO based semiconductor device and its manufacture method
A ZnO based semiconductor device includes: a lamination structure including a first semiconductor layer containing ZnO based semiconductor of a first conductivity type and a second semiconductor...
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8137998 |
Method for fabricating light-emitting devices with vertical light-extraction mechanism
A light-emitting device comprises a lattice structure to minimize the horizontal waveguide effect by reducing light traveling distance in the light-absorption medium of the light-emitting devices,...
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8137996 |
Method and system for tone inverting of residual layer tolerant imprint lithography
A method (and apparatus) of imprint lithography, includes imprinting, via a patterned mask, a pattern into a resist layer on a substrate, and overlaying a cladding layer over the imprinted resist...
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8138004 |
Photoelectric conversion device, manufacturing method thereof and semiconductor device
A manufacturing method of a photoelectric conversion device includes the following steps: forming a first electrode over a substrate; and, over the first electrode, forming a photoelectric...
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8137458 |
Epitaxial growth of ZnO with controlled atmosphere
A ZnO crystal growth method has the steps of (a) preparing a substrate having a surface capable of growing ZnO crystal exposing a Zn polarity plane; (b) supplying Zn and O above the surface of the...
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8137997 |
Method and system for tone inverting of residual layer tolerant imprint lithography
A system for imprint lithography, which includes a substrate, a patterned mask, an imprint applying unit that imprints, via the patterned mask, a pattern into a resist layer on the substrate, and...
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8133465 |
Polymer-carbon nanotube composite for use as a sensor
A polymer-carbon nanotube composite film is provided for use as a sensor for detecting chemical vapors. The composite film is formed by coating perpendicularly-aligned carbon nanotubes with a...
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8129207 |
Light emitting diode having a thermal conductive substrate and method of fabricating the same
Disclosed are a light emitting diode having a thermal conductive substrate and a method of fabricating the same. The light emitting diode includes a thermal conductive insulating substrate. A...
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8124431 |
Nitride semiconductor laser device and method of producing the same
A method of producing a nitride semiconductor laser device includes: forming a wafer including a nitride semiconductor layer of a first conductivity type, an active layer of a nitride...
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8124986 |
Nitride-based semiconductor device and method for fabricating the same
A nitride-based semiconductor device includes: a nitride-based semiconductor multilayer structure including a p-type semiconductor region, a surface of the p-type semiconductor region being an...
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8115220 |
Vertical light emitting diode and method of manufacturing the same
Provided is a vertical LED including an n-electrode; an n-type GaN layer formed under the n-electrode, the n-type GaN layer having a surface coming in contact with the n-electrode, the surface...
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8114689 |
Method for manufacturing light emitting diode chip and light emitting diode light source module
The present invention relates to a method for manufacturing a light emitting diode (LED) chip for a chip on board and a method for manufacturing an LED light source module in a chip on board...
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8115199 |
Electroluminescent devices
An electroluminescent device comprising: a first charge carrier injecting layer for injecting positive charge carriers; a second charge carrier injecting layer for injecting negative charge...
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