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8183064 Thin film transistor devices for OLED displays and method for fabricating the same  
A system for displaying images. The system includes a thin film transistor (TFT) device including a first gate layer disposed on a first region of a substrate and covered by a first insulating...
8183575 Method and apparatus for providing a patterned electrically conductive and optically transparent or semi-transparent layer over a lighting semiconductor device  
A light emitting diode (“LED”) using an electrical conductive and optical transparent or semi-transparent layer to improve overall light output is disclosed. The device includes a first con...
8183555 Semiconductor light emitting device and method for manufacturing the same  
A semiconductor light emitting device including a first semiconductor layer including a first type dopant; a second semiconductor layer including the first type dopant on the first semiconductor...
8183063 Organic light emitting device and method of fabricating the same  
An organic light emitting device (OLED) and a method of fabricating the same are provided, wherein the OLED includes a thin film transistor having a gate electrode, and source and drain electrodes...
8182863 Deposition method and manufacturing method of light-emitting device  
A first substrate including, on one of surfaces, a light absorption layer having metal nitride and a material layer which is formed so as to be in contact with the light absorption layer is...
8183134 Semiconductor device and manufacturing method with improved epitaxial quality of III-V compound on silicon surfaces  
Stacking faults are reduced or eliminated by epitaxially growing a III-V compound semiconductor region in a trench followed by capping and annealing the region. The capping layer limits the escape...
8183066 Method and system for large scale manufacture of thin film photovoltaic devices using multi-chamber configuration  
A method for large scale manufacture of photovoltaic devices includes loading a substrate into a load lock station and transferring the substrate in a controlled ambient to a first process station....
8183065 LED chip package structure with high-efficiency light emission by rough surfaces and method of making the same  
An LED chip package structure with high-efficiency light emission by rough surfaces includes a substrate unit, a light-emitting unit, and a package colloid unit. The substrate unit has a substrate...
8183073 Method of manufacturing a semiconductor device with quantum dots formed by self-assembled growth  
The method of manufacturing the semiconductor device comprises the step of forming quantum dots 16 on a base layer 10 by self-assembled growth; the step of irradiating Sb or GaSb to the surface of...
8178888 Semiconductor light emitting devices with high color rendering  
A packaged light emitting device (LED) includes a light emitting diode configured to emit primary light having a peak wavelength that is less than about 465 nm and having a shoulder emission...
8178895 Semiconductor light-emiting device and method  
A semiconductor light-emitting device can include a submount on which a semiconductor light-emitting element is mounted. The device can have a high light utilization efficiency with high...
8178886 Multi-layered LED epitaxial structure with light emitting unit  
A method for manufacturing a semiconductor light emitting device includes: (a) providing a temporary substrate; (b) forming a multi-layered LED epitaxial structure, having at least one light...
8178370 Method and system for large scale manufacture of thin film photovoltaic devices using multi-chamber configuration  
A method for large scale manufacture of photovoltaic devices includes loading a substrate into a load lock station and transferring the substrate in a controlled ambient to a first process station....
8178369 Nanoscale multi-junction quantum dot device and fabrication method thereof  
The present invention relates to a method of fabricating a nanoscale multi-junction quantum dot device wherein it can minimize constraints depending on the number or shape of patterns and a line...
8168967 Organic light emitting device and method of manufacturing the same  
An organic light emitting device and a method of manufacturing the same, the device including: a substrate; a barrier layer; a first electrode; a second electrode; and an organic layer interposed...
8168454 Vertical light emitting diode and method of manufacturing the same  
Provided is a vertical LED including an n-electrode; an n-type GaN layer formed under the n-electrode, the n-type GaN layer having a surface coming in contact with the n-electrode, the surface...
8168455 Method for manufacturing light emitting diode  
A method for manufacturing light emitting diode (LED) is revealed. By means of wet etching, a plurality of pyramids is formed on epitaxial structure. The depth of the pyramids is beyond a n-type...
8168453 Light emitting diode package and fabrication method thereof  
An LED package and a fabrication method therefor. The LED package includes first and second lead frames made of heat and electric conductors, each of the lead frames comprising a planar base and...
8168516 Method of fabricating single crystal gallium nitride semiconductor substrate, nitride gallium semiconductor substrate and nitride semiconductor epitaxial substrate  
A method of fabricating a single crystal gallium nitride substrate the step of cutting an ingot of single crystal gallium nitride along predetermined planes to make one or more single crystal...
8168986 GaN-based semiconductor light-emitting element, light-emitting element assembly, light-emitting apparatus, method of driving GaN-based semiconductor light-emitting element, and image display apparatus  
A GaN-based semiconductor light-emitting element is provided and includes a first GaN-based compound semiconductor layer; an active layer having a multi-quantum well structure; and a second...
8164104 Light emitting element array and image forming apparatus  
A light emitting element array including an active layer commonly used for light emitting element regions, carrier injection layers which are electrically isolated from each other and which are...
8164083 Quantum dot optoelectronic devices with enhanced performance  
An optoelectronic device is disclosed which includes a quantum dot layer including plurality of quantum dots which do not have capping layers. This optoelectronic device may be a quantum dot...
8163571 Multi-step deposition control  
For providing control of two-step or a multi-step deposition process, a method and a corresponding deposition system is provided comprising providing a deposition process having at least two...
8163576 Nitride semiconductor device having a silicon-containing layer and manufacturing method thereof  
A semiconductor device and a manufacturing method thereof are provided which enable reduction and enhanced stability of contact resistance between the back surface of a nitride substrate and an...
8163575 Grown photonic crystals in semiconductor light emitting devices  
A photonic crystal is grown within a semiconductor structure, such as a III-nitride structure, which includes a light emitting region disposed between an n-type region and a p-type region. The...
8163577 Methods of forming light emitting devices having current reducing structures  
A light emitting device includes a p-type semiconductor layer, an n-type semiconductor layer, and an active region between the n-type semiconductor layer and the p-type semiconductor layer. A...
8158987 Light-emitting diode and method for fabrication thereof  
A transparent-substrate light-emitting diode (10) has a light-emitting layer (133) made of a compound semiconductor, wherein the area (A) of a light-extracting surface having formed thereon a first...
8158447 Dual panel type organic electroluminescent display device and method fabricating the same  
An organic electroluminescent device includes: a switching element and a driving element connected to each other on a substrate including a pixel region; a planarization layer on the switching...
8153455 Method for enhancing light extraction efficiency of light emitting diodes  
A method for enhancing light extraction efficiency of a light emitting diode is disclosed. The method includes the steps of providing a light emitting diode including in sequence a substrate, a...
8154018 Semiconductor device, its manufacture method and template substrate  
A semiconductor device includes a ZnO-containing substrate containing Li, a zinc silicate layer formed above the ZnO-containing substrate, and a semiconductor layer epitaxially grown relative to...
8153456 Bifacial solar cell using ion implantation  
An improved bifacial solar cell is disclosed. In some embodiments, the front side includes an n-type field surface field, while the back side includes a p-type emitter. In other embodiments, the...
8153454 Fabrication apparatus and fabrication method of semiconductor device produced by heating substrate  
A fabrication apparatus and fabrication method of a semiconductor device are provided, allowing the temperature distribution of a substrate to be rendered uniform. The fabrication apparatus for a...
8148178 Method of growing nitride single crystal and method of manufacturing nitride semiconductor light emitting device  
There is provided a method of growing a nitride single crystal. A method of growing a nitride single crystal according to an aspect of the invention may include: growing a first nitride single...
8148723 Light-emitting device and manufacturing method thereof  
A first conductive film, a first insulating film, a semiconductor film, an impurity semiconductor film, and a second conductive film are stacked in this order (a thin-film stacked body); first...
8148179 Hermetically sealed glass package and method of fabrication  
A hermetically sealed glass package and method for manufacturing the hermetically sealed glass package are described herein using an OLED display as an example. In one embodiment, the hermetically...
8148180 Techniques of forming Ohmic contacts on GaN light emitting diodes  
A method of forming ohmic contacts on a light emitting diode that features a surface treatment of a substrate includes exposing a surface of a p-type gallium nitride layer to an acid-containing...
8143170 Manufacturing method of semiconductor device  
A single crystal semiconductor layer is provided over a base substrate with a second insulating film, a first conductive film, and a first insulating film interposed therebetween; an impurity...
8143618 ZnO based semiconductor device and its manufacture method  
A ZnO based semiconductor device includes: a lamination structure including a first semiconductor layer containing ZnO based semiconductor of a first conductivity type and a second semiconductor...
8137998 Method for fabricating light-emitting devices with vertical light-extraction mechanism  
A light-emitting device comprises a lattice structure to minimize the horizontal waveguide effect by reducing light traveling distance in the light-absorption medium of the light-emitting devices,...
8137996 Method and system for tone inverting of residual layer tolerant imprint lithography  
A method (and apparatus) of imprint lithography, includes imprinting, via a patterned mask, a pattern into a resist layer on a substrate, and overlaying a cladding layer over the imprinted resist...
8138004 Photoelectric conversion device, manufacturing method thereof and semiconductor device  
A manufacturing method of a photoelectric conversion device includes the following steps: forming a first electrode over a substrate; and, over the first electrode, forming a photoelectric...
8137458 Epitaxial growth of ZnO with controlled atmosphere  
A ZnO crystal growth method has the steps of (a) preparing a substrate having a surface capable of growing ZnO crystal exposing a Zn polarity plane; (b) supplying Zn and O above the surface of the...
8137997 Method and system for tone inverting of residual layer tolerant imprint lithography  
A system for imprint lithography, which includes a substrate, a patterned mask, an imprint applying unit that imprints, via the patterned mask, a pattern into a resist layer on the substrate, and...
8133465 Polymer-carbon nanotube composite for use as a sensor  
A polymer-carbon nanotube composite film is provided for use as a sensor for detecting chemical vapors. The composite film is formed by coating perpendicularly-aligned carbon nanotubes with a...
8129207 Light emitting diode having a thermal conductive substrate and method of fabricating the same  
Disclosed are a light emitting diode having a thermal conductive substrate and a method of fabricating the same. The light emitting diode includes a thermal conductive insulating substrate. A...
8124431 Nitride semiconductor laser device and method of producing the same  
A method of producing a nitride semiconductor laser device includes: forming a wafer including a nitride semiconductor layer of a first conductivity type, an active layer of a nitride...
8124986 Nitride-based semiconductor device and method for fabricating the same  
A nitride-based semiconductor device includes: a nitride-based semiconductor multilayer structure including a p-type semiconductor region, a surface of the p-type semiconductor region being an...
8115220 Vertical light emitting diode and method of manufacturing the same  
Provided is a vertical LED including an n-electrode; an n-type GaN layer formed under the n-electrode, the n-type GaN layer having a surface coming in contact with the n-electrode, the surface...
8114689 Method for manufacturing light emitting diode chip and light emitting diode light source module  
The present invention relates to a method for manufacturing a light emitting diode (LED) chip for a chip on board and a method for manufacturing an LED light source module in a chip on board...
8115199 Electroluminescent devices  
An electroluminescent device comprising: a first charge carrier injecting layer for injecting positive charge carriers; a second charge carrier injecting layer for injecting negative charge...