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8067265 |
Electric devices and methods of manufaturing the same
A process for manufacturing an electrical device, the process comprising the steps: providing a substrate; bringing a stamp into contact with the substrate whereby areas of the substrate contacted...
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8067300 |
AlxInyGa1-x-yN mixture crystal substrate, method of growing same and method of producing same
Seeds are implanted in a regular pattern upon an undersubstrate. An AlxInyGa1-x-yN (0≦x≦1, 0≦y≦1, 0
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8062912 |
Method of making a semiconductor chip assembly with a post/base heat spreader and horizontal signal routing
A method of making a semiconductor chip assembly includes providing a post and a base, mounting an adhesive on the base including inserting the post through an opening in the adhesive, mounting a...
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8062960 |
Compound semiconductor device and method of manufacturing compound semiconductor device
The present invention provides a method of manufacturing a compound semiconductor device capable of improving yield when a wafer is divided into device regions. The method of manufacturing a...
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8062913 |
Semiconductor structure and method of manufacturing a semiconductor structure
A semiconductor structure is formed of nitrides of group III metals having wurtzite crystal structure and grown in vapor phase on a (0001) oriented semiconductor substrate. The structure comprises...
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8058147 |
Method for producing semiconductor components and thin-film semiconductor component
The invention relates to a method for producing semiconductor components, wherein a layer composite (6) containing a semiconductor material is formed on a growth substrate (1), a flexible carrier...
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8058082 |
Light-emitting diode with textured substrate
A light-emitting diode (LED) device is provided. The LED device has raised semiconductor regions formed on a substrate. LED structures are formed over the raised semiconductor regions such that...
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8058084 |
Pixel structure of LCD and fabrication method thereof
In this pixel structure, a metal layer/a dielectric layer/a heavily doped silicon layer constitutes a bottom electrode/a capacitor dielectric layer/a top electrode of a storage capacitor. At the...
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8058083 |
Method for manufacturing flexible semiconductor device
It is an object of one embodiment of the preset invention to conduct separation without damaging a semiconductor element when the semiconductor element is made flexible. Further, it is another...
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8058155 |
Integrated nanowires/microelectrode array for biosensing
The present invention provides a method for the controlled synthesis of nanostructures on the edges of electrodes and an apparatus capable of optical and electrochemical sensing. In accordance with...
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8053282 |
Mounting structure of component of lighting device and method thereof
Disclosed is a structure for mounting a component to a lighting device, including at least one lighting-device base, at least one metal film, and a lighting array chip. The lighting-device base has...
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8053770 |
Emissive layer patterning for OLED
An organic light emitting device is provided. The device includes an anode, a cathode, and an organic emissive stack disposed between the anode and the cathode. The device may be a “pixel” in a dis...
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8053757 |
Gallium nitride light-emitting device with ultra-high reverse breakdown voltage
One embodiment of the present invention provides a gallium nitride (GaN)-based semiconductor light-emitting device (LED) which includes an n-type GaN-based semiconductor layer (n-type layer); an...
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8048699 |
Dual panel type organic electroluminescent display device and method of fabricating the same
An organic electroluminescent device includes: a switching element and a driving element connected to each other on a substrate including a pixel region; a planarization layer on the switching...
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8048701 |
Nitride semiconductor LED using a hybrid buffer layer and a fabrication method therefor
The present invention relates to a nitride semiconductor light emitting device using a hybrid buffer layer and a method for fabricating the same which can minimize the lattice mismatch between a...
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8049231 |
Quantum photonic imagers and methods of fabrication thereof
Emissive quantum photonic imagers comprised of a spatial array of digitally addressable multicolor pixels. Each pixel is a vertical stack of multiple semiconductor laser diodes, each of which can...
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8048692 |
LED light emitter with heat sink holder and method for manufacturing the same
An LED light emitter with heat sink holder and a method for manufacturing it are both disclosed. The LED light emitter with heat sink holder includes a heat sink holder and at least an LED chip....
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8048693 |
Methods and structures for relaxation of strained layers
The present invention provides methods for relaxing a strained-material layer and structures produced by the methods. Briefly, the methods include depositing a first low-viscosity layer that...
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8049233 |
Light-emitting device
A light-emitting device of the present invention includes: a semiconductor layer 1 including a light-emitting layer 12; a recess/projection portion 14 including recesses and projections formed in a...
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8049242 |
Optoelectronic device
An optoelectronic device such as a light-emitting diode chip is disclosed. It includes a substrate, a multi-layer epitaxial structure, a first metal electrode layer, a second metal electrode layer,...
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8048702 |
Method of fabricating nitride-based semiconductor optical device
In the method of fabricating a nitride-based semiconductor optical device by metal-organic chemical vapor deposition, a barrier layer is grown at a first temperature while supplying a gallium...
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8049227 |
Group III nitride semiconductor light emitting device, method for producing the same, and lamp thereof
A group III nitride semiconductor light emitting device with a double sided electrode structure which has a low driving voltage as well as excellent light emission efficiency is provided, and the...
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8043873 |
Method for fabricating light emitting diode chip
A method for fabricating a light emitting diode chip is provided. Firstly, a semiconductor device layer is formed on a substrate. Afterwards, a current spreading layer is formed on a portion of the...
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8043462 |
Methods for forming gas barriers on electronic devices
A method for forming gas barriers on electronic devices is provided. The fabrication method includes: providing a first substrate having at least one electronic device thereon; providing a second...
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8043872 |
Epitaxial material used for GaN based LED with low polarization effect and manufacturing method thereof
A method of manufacturing epitaxial material used for GaN based LED with low polarization effect, which includes steps of growing n-type InGaAlN layer composed of GaN buffer layer (2) and n-type...
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8044385 |
Semiconductor light emitting device and method for manufacturing the same
Disclosed is a semiconductor light emitting device. The semiconductor light emitting device comprises a first conductive semiconductor layer, a lower super lattice layer under the first conductive...
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8044428 |
Package and semiconductor device for preventing occurrence of false connection
A package has a base substrate that is a metal plate electrically connected to one electrode of a UV-ray light emitting diode and a cover substrate that is a metal plate electrically connected to...
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8044381 |
Light emitting diode (LED)
A light-emitting diode (LED) includes a p-type layer, an n-type layer, and an active layer arranged between the p-type layer and the n-type layer. The active layer includes at least one quantum...
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8044379 |
Well-aligned, high aspect-ratio, high-density silicon nanowires and methods of making the same
A method of producing silicon nanowires includes providing a substrate in the form of a doped material; formulating an etching solution; and applying an appropriate current density for an...
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8044410 |
White light-emitting diode and its light conversion layer
The present invention discloses a white light-emitting diode based on In—Ga—N nitride heterojunction is characterized by that the light-emitting diode has primary blue light emission of a spe...
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8039359 |
Method of forming low capacitance ESD device and structure therefor
In one embodiment, the ESD device uses highly doped P and N regions deep within the ESD device to form a zener diode that has a controlled breakdown voltage.
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8039280 |
Light emitting diode and method of fabricating the same
The present invention provides a method of fabricating a light emitting diode, which comprises the steps of forming a compound semiconductor layer on a substrate, the compound semiconductor layer...
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8039846 |
Light emitting diode having a thermal conductive substrate and method of fabricating the same
Disclosed are a light emitting diode having a thermal conductive substrate and a method of fabricating the same. The light emitting diode includes a thermal conductive insulating substrate. A...
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8034643 |
Method for fabrication of a semiconductor device
A method for fabrication of a semiconductor device on a substrate, the semiconductor having a wafer. The method includes the steps:(a) applying a seed layer of a thermally conductive metal to the...
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8034639 |
Method for manufacturing solar cell module
Disclosed is a method for manufacturing a solar cell module in which a wiring substrate having a base material and a wiring formed on the base material, and a plurality of solar cells electrically...
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8035107 |
Method for manufacturing display device
A first conductive film, a first insulating film, a semiconductor film, an impurity semiconductor film, a second conductive film, and a first resist mask are formed; first etching is performed to...
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8034644 |
Light emitting device
Methods of making a light emitter are disclosed herein. An embodiment of a method comprises fabricating a line of first leads, the line of first leads comprising a plurality connected individual...
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8030652 |
Pixel structure and fabricating method thereof
A pixel structure and a fabrication method thereof are provided. A substrate with a light-shielding layer and a flat layer formed thereon is provided. A first photomask process is conducted to...
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8030101 |
Process for producing an epitaxial layer of galium nitride
A method of manufacturing a low defect density GaN material comprising at least two steps of growing epitaxial layers of GaN with differences in growing conditions, (a.) a first step of growing an...
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8030108 |
Epitaxial growth of in-plane nanowires and nanowire devices
Exemplary embodiments provide semiconductor nanowires and nanowire devices/applications and methods for their formation. In embodiments, in-plane nanowires can be epitaxially grown on a patterned...
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8030638 |
Quasi single crystal nitride semiconductor layer grown over polycrystalline SiC substrate
A compound semiconductor device is manufactured by using a polycrystalline SiC substrate, the compound semiconductor device having a buffer layer being formed on the substrate and having a high...
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8030102 |
LED units fabrication method
A method for fabricating a plurality of individual light emitting diode units includes forming a GaN epitaxial layer on a sapphire substrate, forming a plurality of exhaust trenches on the GaN...
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8026531 |
Light emitting device
To provide a light emitting device in which generation of cross talk between adjacent light emitting elements is suppressed, even when the light emitting device uses a light emitting element having...
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8022387 |
Composite semiconductor device having a thyristor structure
A semiconductor device includes a light-emitting layer of a first conductivity type, a second conductivity type or non-doped type, a first contact layer of the second conductivity type disposed on...
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8021900 |
Planar waveguide with patterned cladding and method for producing same
Methods for the production of integrated optical waveguides which have a patterned upper cladding with a defined opening to allow at least one side or at least one end of a light transmissive...
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8021902 |
Method for fabricating light emitting diode
A method of fabricating a light emitting diode includes the following steps. A substrate is provided and a first semiconductor layer, an active layer, and a second semiconductor layer are placed on...
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8021901 |
Method of fabricating vertical structure nitride semiconductor light emitting device
A method of fabricating a vertical structure nitride semiconductor light emitting device having a cross-sectional shape of a polygon having five or more sides or a circle. A light emitting...
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8017960 |
Infrared emitting diode and method of its manufacture
An infrared emitting diode that can be utilized as a high power and rapidly responsive infrared light source for both infrared and remote control communications is disclosed which comprises at...
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8017415 |
Dual sided processing and devices based on freestanding nitride and zinc oxide films
Thin freestanding nitride films are used as a growth substrate to enhance the optical, electrical, mechanical and mobility of nitride based devices and to enable the use of thick transparent...
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8017414 |
Method for manufacturing light emitting device using non-polar substrate
A method for manufacturing a light emitting device includes preparing a substrate where a crystal growth surface has an a-plane or an m-plane; forming a buffer layer on the substrate; forming a...
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