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8319233 Light emitting device  
Disclosed is a light emitting device including a substrate, a light emitting structure arranged on the substrate, the light emitting structure including a first semiconductor layer, a second...
8319238 Light emitting device with improved light extraction efficiency  
A light emitting device having a high degree of light extraction efficiency includes a substrate, and a light emitting structure disposed on one surface of the substrate, the substrate having an...
8314009 Method for manufacturing SOI substrate and method for manufacturing semiconductor device  
A nitrogen-containing layer is formed over a semiconductor substrate; ions are added at a predetermined depth in the semiconductor substrate through the nitrogen-containing layer to form a...
8314414 Light emitting device and light emitting device package for improving a light emission efficency  
A light emitting device, a method of manufacturing the same, a light emitting device package, and a lighting system are disclosed. The light emitting device may include a first conductive...
8314430 ***WITHDRAWN PATENT AS PER THE LATEST USPTO WITHDRAWN LIST***
Optoelectronic component and method for the manufacture of a plurality of optoelectronic components
 
An optoelectronic component with a semiconductor body includes an active region suitable for generating radiation, and two electrical contacts arranged on the semiconductor body. The contacts are...
8313961 Apparatus and method for manufacturing light-emitting diode  
An apparatus and method for manufacturing a light emitting devices by separating a semiconductor layer from a substrate includes a laser beam source for emitting a laser beam, a mesh-typed mask...
8313972 Photodetector using nanoparticles  
The present invention relates to a photodetector using nanoparticles, and more particularly, to a novel photodetector wherein surfaces of nanoparticles synthesized by a wet colloidal process are...
8314470 Solid-state imaging device and manufacturing method thereof  
According to one embodiment, a solid-state imaging device includes a semiconductor substrate of a first conductive type having a diffusion layer region provided on a surface thereof, a diffusion...
8314441 Optoelectronic component  
An optoelectronic component having a basic housing or frame and at least one semiconductor chip, specifically a radiation-emitting or -receiving semiconductor chip, in a cavity of the basic...
8314450 Solid-state imaging device and method for manufacturing same  
A solid-state imaging device includes: a semiconductor substrate having a plurality of vertical transfer channel regions and a plurality of photoelectric conversion regions arranged in a matrix; a...
8310037 Light emitting apparatus and fabrication method thereof  
A light emitting apparatus comprising a substrate, a first functional chip and a first light emitting component is provided. The substrate, the first functional chip, and the first light emitting...
8309949 Optoelectronic architecture having compound conducting substrate  
Optoelectronic device modules, arrays optoelectronic device modules and methods for fabricating optoelectronic device modules are disclosed. The device modules are made using a starting substrate...
8309981 LED module with color conversion layer designed for a homogenous color distribution  
An LED module having an LED semiconductor chip mounted directly or indirectly on a platform. The platform is made from silicon and is extends laterally beyond the LED semiconductor chip having an...
8304273 Insulated nanogap devices and methods of use thereof  
The present invention provides a method to eliminate undesired parallel conductive paths of nanogap devices for aqueous sensing. The method involves the electrical insulation of an electrode pair,...
8304800 Light emitting device, light emitting device package, and lighting device system  
A light emitting device includes a substrate, a light emitting structure including a first conductive semiconductor layer having an exposed region, an active layer, and a second conductive...
8304265 Color conversion filter and manufacturing method of the organic EL display  
A process for producing a color conversion filter uses an ink jet recording method, which can form a color conversion layer at a desired position without the need to separately form partition...
8299476 Light emitting diode having light emitting cell with different size and light emitting device thereof  
There is provided a light emitting diode operating under AC power comprising a substrate; a buffer layer formed on the substrate; and a plurality of light emitting cells formed on the buffer layer...
8298840 Dual sided processing and devices based on freestanding nitride and zinc oxide films  
Thin freestanding nitride films are used as a growth substrate to enhance the optical, electrical, mechanical and mobility of nitride based devices and to enable the use of thick transparent...
8299481 Wafer-scaled light-emitting structure  
This invention discloses a wafer-scaled light-emitting structure comprising a supportive substrate; an anti-deforming layer; a bonding layer; and a light-emitting stacked layer, wherein the...
8298839 Manufacturing method of a thin film active element  
There is provided a thin film active element including a light-permeable substrate, a light-shielding source/drain electrode formed on the substrate, a light-permeable source/drain electrode formed...
8293319 Method for manufacturing light-emitting device  
By irradiating a first substrate which is an evaporation donor substrate including a function layer in which films having different refractive indexes (high-refractive index films and low...
8293554 Luminous device and method of manufacturing the same  
A luminous device and a method of manufacturing the luminous device are provided. The luminous device includes a light emitting layer and first and second electrodes connected to the light emitting...
8294160 Light emitting device including a sealing portion, and method of making the same  
A method of making a light emitting device, includes a mounting and a light emitting element on a substrate; hot-pressing a glass material on the light emitting element to form a glass sealing...
8293552 Light-emitting device, liquid-crystal display device and method for manufacturing same  
The present invention provides a structure of a semiconductor device that realizes low power consumption even where increased in screen size, and a method for manufacturing the same. The invention...
8288681 Laser processing apparatus and laser processing method as well as debris extraction mechanism and debris extraction method  
A laser processing apparatus is provided. The laser processing apparatus removes and extracts debris generated by irradiating a transparent resin layer formed on a substrate with laser light during...
8288212 Pixel structure of a thin film transistor liquid crystal display and fabricating method thereof  
A method of fabricating a pixel structure of a thin film transistor liquid crystal display is provided. A transparent conductive layer and a first metallic layer are sequentially formed over a...
8288182 Method for manufacturing thin film transistor and display device  
A method for manufacturing a thin film transistor includes: forming a source electrode and a drain electrode on a substrate by depositing a metal layer on the substrate at a first temperature and...
8288253 InxGa1-xAsYP1-Y quaternary etch stop for improved chemical resistivity of gallium arsenide field effect transistors  
A process for fabricating a semiconductor device. The process including (a) growing a channel layer on a buffer layer, (b) growing a barrier layer on the channel layer, (c) epitaxially growing a...
8288180 Method for manufacturing light emitting device  
An object of the present invention to improve reliability of a light emitting device having a mixed layer including an organic compound and metal oxide without reducing productivity. The above...
8288181 Light emitting diode and fabricating method thereof  
A light emitting diode and its fabricating method are disclosed. A light emitting diode epitaxy structure is formed on a substrate, and then the light emitting diode epitaxy structure is etched to...
8283188 Method for fabricating light emitting diode chip  
A method for fabricating a light emitting diode chip is provided. Firstly, a semiconductor device layer is formed on a substrate. Afterwards, a current spreading layer is formed on a portion of the...
8283694 GaN substrate, epitaxial layer-provided substrate, methods of manufacturing the same, and method of manufacturing semiconductor device  
A GaN substrate on which an epitaxially grown layer of good quality can be formed is obtained. A GaN substrate as a group III nitride substrate has a surface in which the number of chlorine atoms...
8278645 Light emitting diode and fabrication thereof  
A light emitting diode is disclosed, wherein the light emitting diode comprises a metal reflective layer for enhancing the light reflection efficiency inside the light emitting diode and reducing...
8278126 Method for manufacturing organic electroluminescence device  
The present invention is intended to provide a method for manufacturing an organic EL device, which method can form a film having high barrier properties to water vapor or oxygen, while suppressing...
8278125 Group-III nitride epitaxial layer on silicon substrate  
A semiconductor device includes a silicon substrate; silicon faceted structures formed on a top surface of the silicon substrate; and a group-III nitride layer over the silicon faceted structures....
8273584 Light emitting diode  
A semiconductor device including a wafer-level LED includes a semiconductor structure coupled to first and second electrodes. The semiconductor includes a P-doped portion of a first layer to an...
8274216 Bottom emission type organic electroluminescent panel  
Provided is a bottom emission type organic EL panel capable of preventing or delaying loss of light emission from an end portion of the light emission area and reduction of the light emission area...
8273585 Optical semiconductor device and method for manufacturing the same  
There is provided an optical semiconductor device having a first optical semiconductor element including an InP substrate, a lower cladding layer formed on the InP substrate, a lower optical guide...
8268648 Silicon based solid state lighting  
A semiconductor device includes a substrate comprising a first surface having a [111] orientation and a second surface having a second orientation and a plurality of III-V compound layers on the...
8268657 Laser induced thermal imaging apparatus  
A laser induced thermal imaging (LITI) apparatus and a method of making an electronic device using the same are disclosed. The LITI apparatus includes a chamber, a substrate support, a contact...
8268646 Group III-nitrides on SI substrates using a nanostructured interlayer  
A layered group III-nitride article includes a single crystal silicon substrate, and a highly textured group III-nitride layer, such as GaN, disposed on the silicon substrate. The highly textured...
8268649 Disk laser including an amplified spontaneous emission (ASE) suppression feature  
A laser system may include a first portion of laser host material adapted for amplification of laser radiation and a second portion of laser host material surrounding the first portion which may be...
8263422 Bond pad isolation and current confinement in an LED using ion implantation  
An improved method of creating LEDs is disclosed. Rather than using a dielectric coating to separate the bond pads from the top surface of the LED, this region of the LED is implanted with ions to...
8263425 Multilayer substrate having gallium nitride layer and method for forming the same  
The present invention provides a method for forming a multilayer substrate having a gallium nitride layer, wherein a mesh layer having a plurality of openings is formed on a substrate, and a buffer...
8263965 Single-crystal semiconductor layer with heteroatomic macro-network  
A single-crystal layer of a first semiconductor material including single-crystal nanostructures of a second semiconductor material, the nanostructures being distributed in a regular...
8263480 Methods for site-selective growth of horizontal nanowires, nanowires grown by the methods and nanodevices comprising the nanowires  
Methods for the site-selective growth of horizontal nanowires are provided. According to the methods, horizontal nanowires having a predetermined length and diameter can be grown site-selectively...
8258522 Light-emitting diode apparatus  
An LED apparatus includes a base having thermal conductivity, an insulative substrate provided on one surface of the base and including electrodes provided on a surface of the substrate, at least...
8257987 Planarization of GaN by photoresist technique using an inductively coupled plasma  
Films of III-nitride for semiconductor device growth are planarized using an etch-back method. The method includes coating a III-nitride surface having surface roughness features in the micron...
8252614 Solid-state image sensor and imaging system  
At least one exemplary embodiment is directed to a solid state image sensor including at least one antireflective layer and/or non rectangular shaped wiring layer cross section to reduce dark...
8252611 Buffer layer and manufacturing method thereof, reaction solution, photoelectric conversion device, and solar cell  
A buffer layer manufacturing method, including the steps of forming a fine particle layer of ZnS, Zn(S, O), and/or Zn(S, O, OH), mixing an aqueous solution (I) which includes a component (Z), an...