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8659033 Light-emitting diode with textured substrate  
A light-emitting diode (LED) device is provided. The LED device has raised semiconductor regions formed on a substrate. LED structures are formed over the raised semiconductor regions such that...
8658444 Semiconductor active matrix on buried insulator  
A high resolution active matrix backplane is fabricated using techniques applicable to flexible substrates. A backplane layer including active semiconductor devices is formed on a...
8658450 Crystal growth method and semiconductor light emitting device  
According to one embodiment, a crystal growth method is disclosed for growing a crystal of a nitride semiconductor on a major surface of a substrate. The major surface is provided with asperities....
8658440 Nitride semiconductor crystal with surface texture  
A nitride semiconductor light emitting device is formed by: forming a resist pattern on a first nitride semiconductor layer formed on a substrate, the resist pattern having a region whose...
8658451 Activating GaN LEDs by laser spike annealing and flash annealing  
Methods of performing fast thermal annealing in forming GaN light-emitting diodes (LEDs) are disclosed, as are GaN LEDs formed using fast thermal annealing. An exemplary method includes forming a...
8658441 Method of manufacturing nitride semiconductor light emitting element  
To provide a method of manufacturing a nitride semiconductor light emitting element, which has a small number of steps and thus, can improve productivity, the method of manufacturing a nitride...
8652918 Nitride semiconductor structure  
A structure method for producing same provides suppressed lattice defects when epitaxially forming nitride layers over non-c-plane oriented layers, such as a semi-polar oriented template layer or...
8653551 Light-emitting element  
A light-emitting element, a light-emitting element unit and a light-emitting element package are provided, which are each reduced in reflection loss and intra-film light absorption by suppressing...
8652860 Packaging photon building blocks having only top side connections in a molded interconnect structure  
Standardized photon building blocks are packaged in molded interconnect structures to form a variety of LED array products. No electrical conductors pass between the top and bottom surfaces of the...
8652856 Method for use in making electronic devices having thin-film magnetic components  
Disclosed herein is a method of forming electronic device having thin-film components by using trenches. One or more of thin-film components is formed by depositing a thin-film in the trench...
8648377 Semiconductor light-emitting device  
A semiconductor light-emitting device including a substrate, an n-type semiconductor layer formed on the substrate, an active layer laminated on the n-type semiconductor layer and capable of...
8647904 Method for manufacturing nitride semiconductor device, nitride semiconductor light-emitting device, and light-emitting apparatus  
Provided is a method for manufacturing a nitride semiconductor device, including the steps of: forming an AlNO buffer layer containing at least aluminum, nitrogen, and oxygen on a substrate; and...
8648382 Planar light emitting device having structure for brightness uniformity and a compact area of non-light emitting part  
Planar light emitting device includes: anode and cathode feeding parts formed on first surface side of transparent substrate and electrically connected to quadrilateral planar anode and cathode,...
8647897 Air-stable ink for scalable, high-throughput layer deposition  
A method for producing and depositing air-stable, easily decomposable, vulcanized ink on any of a wide range of substrates is disclosed. The ink enables high-volume production of optoelectronic...
8647907 Nitride-based semiconductor device and method for fabricating the same  
A method includes the step of preparing a GaN-based substrate 10, the step of forming on the substrate a nitride-based semiconductor multilayer structure including a p-type AldGaeN layer (p-type...
8648375 Semiconductor light emitting device and light emitting module  
According to one embodiment, a semiconductor light emitting device includes: a semiconductor layer including a first and second surfaces, and a light emitting layer; a p-side electrode provided on...
8648355 Semiconductor light emitting device having one or more recesses on a layer  
Disclosed is a semiconductor light emitting device. The semiconductor light emitting device comprises a substrate; a light emitting structure comprising a first conductive semiconductor layer, an...
8648288 Pixels, imagers and related fabrication methods  
Pixels, imagers and related fabrication methods are described. The described methods result in cross-talk reduction in imagers and related devices by generating depletion regions. The devices can...
8642360 Method for manufacturing light-emitter, organic display panel using light-emitter, organic light-emitting device and organic display device  
A resin material layer including photosensitive resin material is formed on an interlayer on an underlayer. By partially exposing and developing the resin material layer using developer in which...
8643128 Micro-electro-mechanical-system sensor and method for making same  
The present invention discloses an MEMS sensor and a method for making the MEMS sensor. The MEMS sensor according to the present invention includes: a substrate including an opening; a suspended...
8642361 Method and system for large scale manufacture of thin film photovoltaic devices using multi-chamber configuration  
A method for large scale manufacture of photovoltaic devices includes loading a substrate into a load lock station and transferring the substrate in a controlled ambient to a first process station....
8642379 Thin film transistor  
A method of making a top-gate organic thin film transistor, comprising forming source and drain contacts on a substrate; oxidizing portions of the source and drain contacts; depositing an organic...
8637876 Light emitting device and light emitting device package having the same  
Disclosed are a light emitting device and a light emitting device package having the same. The light emitting device includes a plurality of light emitting cells including a first conductive...
8637329 Method for producing semiconductor optical integrated device  
A method for producing a semiconductor optical integrated device includes the steps of forming a substrate product including first and second stacked semiconductor layer portions; forming a first...
8637897 Semiconductor light emitting device having multi-cell array and method for manufacturing the same  
A semiconductor light emitting device includes a substrate and a plurality of light emitting cells arranged on the substrate. Each of the light emitting cells includes a first-conductivity-type...
8633041 Method for manufacturing quantum cascade laser  
A method for manufacturing a quantum cascade laser includes the steps of forming a semiconductor stacked structure including a first semiconductor region and a second semiconductor region; forming...
8633040 Method for synthesising semiconductor quantum dots  
The invention can be used for producing different luminescent materials and as a basis for producing subminiature light-emitting diodes, white light sources, single-electron transistors, nonlinear...
8628986 Organic electroluminescent element and method for manufacturing the same  
The present invention provides an organic electroluminescence (EL) element that suppresses leakage current flowing between an upper electrode and an under electrode through an organic layer. The...
8629425 Tunable wavelength light emitting diode  
A light emitting diode and a method of fabricating a light emitting diode, the diode has a first set of multiple quantum wells (MQWs), each of the MQWs of the first set comprising a wetting layer...
8628984 Light-emitting diode (LED) package systems  
A package system includes a substrate having at least one first thermally conductive structure through the substrate. At least one second thermally conductive structure is disposed over the at...
8623675 Beam homogenizer, laser irradiation apparatus, and method for manufacturing semiconductor device  
The energy distribution of the beam spot on the irradiated surface changes due to the change in the oscillation condition of the laser or before and after the maintenance. The present invention...
8624258 Semiconductor device  
Semiconductor elements deteriorate or are destroyed due to electrostatic discharge damage. The present invention provides a semiconductor device in which a protecting means is formed in each pixel....
8623676 Semiconductor light emitting device with light transmittable electrode and method for manufacturing same  
According to one embodiment, a semiconductor light emitting device includes first and second conductive layers, a first semiconductor layer of a first conductivity type, a second semiconductor...
8624284 Light-emitting device and lighting device  
Provided is a light-emitting device having a structure in which a high refractive index component is provided between a solid light-emitting element and air, has an uneven structure on a surface in...
8624268 Light emitting device package and method of manufacturing the same  
A light emitting device package is provided. The light emitting device package comprises a substrate comprising a plurality of protrusions, an insulating layer on the substrate, a metal layer on...
8623677 Method and system for large scale manufacture of thin film photovoltaic devices using multi-chamber configuration  
A method for large scale manufacture of photovoltaic devices includes loading a substrate into a load lock station and transferring the substrate in a controlled ambient to a first process station....
8617911 Method for forming coating film on facet of semiconductor optical device  
The method includes the steps of preparing an epitaxial wafer by forming a multilayer semiconductor structure on a main surface of a substrate; forming stripe electrodes and bonding pads on the...
8617909 LED with substrate modifications for enhanced light extraction and method of making same  
The surface morphology of an LED light emitting surface is changed by applying a reactive ion etch (RIE) process to the light emitting surface. Etched features, such as truncated pyramids, may be...
8614471 Collections of laterally crystallized semiconductor islands for use in thin film transistors  
Collections of laterally crystallized semiconductor islands for use in thin film transistors and systems and methods for making same are described. A display device includes a plurality of thin...
8610162 Semiconductor light emitting device  
A semiconductor light emitting device includes: first and second conductive type semiconductor layers; an active layer disposed between the first and second conductive type semiconductor layers;...
8609517 MOCVD for growing III-V compound semiconductors on silicon substrates  
A device includes providing a silicon substrate; annealing the silicon substrate at a first temperature higher than about 900° C.; and lowering a temperature of the silicon substrate from the ...
8604497 Radiation-emitting thin-film semiconductor chip  
A radiation-emitting thin-film semiconductor chip with an epitaxial multilayer structure (12), which contains an active, radiation-generating layer (14) and has a first main face (16) and a second...
8604490 Organic light-emitting device and method of manufacturing the same  
An organic EL device includes a first substrate and a plurality of organic EL elements above a first portion of the first substrate. A first inorganic layer covers the plurality of organic EL...
8597962 Vertical structure LED current spreading by implanted regions  
An improved method of fabricating a vertical semiconductor LED is disclosed. Ions are implanted into the LED to create non-conductive regions, which facilitates current spreading in the device. In...
8597961 Method for improving internal quantum efficiency of group-III nitride-based light emitting device  
A method for improving internal quantum efficiency of a group-III nitride-based light emitting device is disclosed. The method includes the steps of: providing a group-III nitride-based substrate...
8598619 Semiconductor light emitting device having multi-cell array and method for manufacturing the same  
A semiconductor light emitting device includes a substrate and a plurality of light emitting cells arranged on the substrate. Each of the light emitting cells includes a first-conductivity-type...
8598573 Infrared pass visible blocker for upconversion devices  
An IR-to-Visible up-conversion device with a stacked layer structure includes an IR pass visible blocking layer such that the IR entry face of the stacked device allows IR radiation, particularly...
8598599 Group III nitride semiconductor light-emitting device  
The present invention provides a Group III nitride semiconductor light-emitting device whose main surface is a plane which provides an internal electric field of zero, and which exhibits improved...
8592230 Method for patterning a substrate using ion assisted selective depostion  
A method of patterning a substrate includes providing a focusing plate adjacent to a plasma chamber containing a plasma, the focusing plate configured to extract ions from the plasma through at...
8592842 Vertical light emitting diodes  
A light emitting device (LED) employs one or more conductive multilayer reflector (CMR) structures. Each CMR is located between the light emitting region and a metal electrical contact region,...