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8558247 GaN LEDs with improved area and method for making the same  
Enlightening device and method for making the same are disclosed. Individual light emitting devices such as LEDs are separated to form individual dies by process in which a first narrow trench cuts...
8558217 Light emitting diode  
A light emitting diode includes a substrate, a carbon nanotube layer, a first semiconductor layer, an active layer, a second semiconductor layer, a first electrode, and a second electrode. The...
8551793 Red and green fluorosulfide phosphor, preparation method and white-light emitting diodes thereof  
Novel red and green fluorosulfide phosphors have a chemical formula of (A1-x-yCexBy)SF, wherein A and B are both trivalent metal ions, 0
8552463 Electronic devices with yielding substrates  
In accordance with certain embodiments, a semiconductor die is adhered directly to a yielding substrate with a pressure-activated adhesive notwithstanding any nonplanarity of the surface of the...
8546819 Light emitting device and fabrication method thereof  
A method of fabricating a vertical light emitting diode including: growing a low doped first semiconductor layer on a sacrificial substrate; forming an aluminum layer on the low doped first...
8546156 High efficiency light-emitting diode and method for manufacturing the same  
A high efficiency light-emitting diode and a method for manufacturing the same are described. The high efficiency light-emitting diode comprises: a permanent substrate; a first contact metal layer...
8546839 Light emitting diode  
A light emitting diode includes a substrate, a first semiconductor layer, an active layer and a second semiconductor layer. The first semiconductor layer, the active layer and the second...
8546157 Bifacial solar cell using ion implantation  
An improved bifacial solar cell is disclosed. In some embodiments, the front side includes an n-type field surface field, while the back side includes a p-type emitter. In other embodiments, the...
8541789 Light-emitting device with patterned current diffusion layer  
Disclosed is a light-emitting device including a permanent substrate, an adhesive layer on the permanent substrate, a current diffusion layer on the adhesive layer, and a semiconductor stack layer...
8535958 Method for fabricating light emitting diode  
A method for fabricating a light emitting diode includes steps of: forming a light emitting structure of the light emitting diode on a substrate; arranging a photoresist layer on a first...
8536610 Parallel optical transceiver module  
A silicon-on-insulator wafer is provided. The silicon-on-insulator wafer includes a silicon substrate having optical vias formed therein. In addition, an optically transparent oxide layer is...
8536612 Light emitting device having a pluralilty of light emitting cells and package mounting the same  
Disclosed is a light emitting device having a plurality of light emitting cells and a package having the same mounted thereon. The light emitting device includes a plurality of light emitting cells...
8536057 Thin film deposition apparatus and method of manufacturing organic light emitting device by using the same  
A thin film deposition apparatus and a method of manufacturing an organic light emitting device (OLED) using the thin film deposition apparatus. The thin film deposition apparatus includes a...
8530249 Middle layer of die structure that comprises a cavity that holds an alkali metal  
In one implementation, a chamber is selected that accommodates an array of die structures that comprises one or more cavities. An inner chamber of the chamber is maintained at a first temperature....
8530946 ***WITHDRAWN PATENT AS PER THE LATEST USPTO WITHDRAWN LIST***
Photo detector device, photo sensor and spectrum sensor
 
A photodetector device includes: a first semiconductor region of a first conductivity type electrically connected to a first external electrode: a second semiconductor region of a second...
8525210 Semiconductor light emitting device and method for manufacturing the same  
A vertical semiconductor light emitting device which can alleviate a concentration of current inside a semiconductor film without impairing the electrical connection between an ohmic electrode and...
8525152 Formation of solar cells with conductive barrier layers and foil substrates  
Methods and devices are provided for absorber layers formed on foil substrate. In one embodiment, a method of manufacturing photovoltaic devices may be comprised of providing a substrate comprising...
8526186 Electronic assembly including die on substrate with heat spreader having an open window on the die  
An electronic assembly includes a workpiece, a through substrate via (TSV) die including a substrate and a plurality of TSVs, a topside and a bottomside having TSV connectors thereon. The TSV die...
8525221 LED with improved injection efficiency  
A light emitting device and method for making the same is disclosed. The light-emitting device includes an active layer sandwiched between a p-type semiconductor layer and an n-type semiconductor...
8525204 Semiconductor light emitting element and illuminating apparatus using the same  
A semiconductor light emitting element, including: an n-type semiconductor layer having optical transparency with an emission wavelength of a light emitting layer, the light emitting layer and a...
8519435 Flexible photovoltaic cells having a polyimide material layer and method of producing same  
A photovoltaic cell is fabricated onto a polyimide film using an unbalanced RF magnetron sputtering process. The sputtering process includes the addition of 0.05% to 0.5% oxygen to an inert gas...
8519425 Light-emitting device and manufacturing method thereof  
A light-emitting device includes a substrate and a planarizing film above the substrate. The planarizing film has a recessed portion between non-recessed portions. A bottom electrode layer is above...
8518727 Method of forming encapsulation substrate for an organic light emitting diode display device  
An organic light emitting diode (OLED) display device and method of fabrication that includes a substrate having a device region, an outer dam region and an encapsulation region. The encapsulation...
8518730 Sapphire wafer dividing method  
A sapphire wafer dividing method including a cut groove forming step of forming a plurality of cut grooves on the back side of a sapphire wafer along a plurality of crossing division lines formed...
8518726 Uses of a carbon nanobud molecule and devices comprising the same  
A carbon nanobud molecule (3, 9, 18, 23, 29, 36) having at least one fullerene part covalently bonded to the side of a tubular carbon molecule is used to interact with electromagnetic radiation in...
8519413 Organic light emitting diode display  
An organic light emitting diode display is disclosed. The display includes a substrate, a first electrode placed on the substrate, an organic emissive layer placed on the first electrode, a second...
8513697 Light emitting device, method of manufacturing the same, light emitting device package, and illumination system  
A light emitting device includes a light emitting structure including a first conductive semiconductor layer, a second conductive semiconductor layer, and an active layer between the first and...
8513118 Method for producing compound semiconductor light-emitting device  
It is intended to provide a production method that enables at least one of improvement in transparency, reduction in sheet resistance, homogenization in planar distribution of sheet resistance, and...
8513036 Photonic quantum ring laser and fabrication method thereof  
A photonic quantum ring (PQR) laser includes an active layer having a multi-quantum-well (MQW) structure and etched lateral face. The active layer is formed to be sandwiched between p-GaN and n-GaN...
8513039 Method for fabricating semiconductor lighting chip  
A method for fabricating a semiconductor lighting chip includes steps of: providing a substrate; forming a first etching layer on the substrate; forming a connecting layer on the first etching...
8514902 P-type isolation between QCL regions  
A quantum cascade laser and its method of fabrication are provided. The quantum cascade laser comprises one or more p-type electrical isolation regions and a plurality of electrically isolated...
8513687 Semiconductor light emitting device and semiconductor light emitting apparatus  
A semiconductor light emitting device, includes: a stacked structure unit including a first semiconductor layer, a second semiconductor layer, and a light emitting layer provided between the first...
8513636 Vertical diodes for non-volatile memory device  
A steering device. The steering device includes an n-type impurity region comprising a zinc oxide material and a p-type impurity region comprising a silicon germanium material. A pn junction region...
8507925 Optoelectronic device and method for manufacturing the same  
An optoelectronic device, comprising: a substrate; a plurality of the first semiconductor rods formed on the substrate, contacted with the substrate, and exposed partial of the first surface of the...
8508009 Microlens and an image sensor including a microlens  
A microlens, an image sensor including the microlens, a method of forming the microlens and a method of manufacturing the image sensor are provided. The microlens includes a polysilicon pattern,...
8508434 Superimposed displays  
Various embodiments of methods and systems for constructing, configuring, and utilizing displays constructed from superimposed display subunits are disclosed. In one aspect, a display includes a...
8502263 Light-emitter-based devices with lattice-mismatched semiconductor structures  
Some aspects for the invention include a method and a structure including a light-emitting device disposed over a second crystalline semiconductor material formed over a semiconductor substrate...
8501508 Method of forming quantum well mosfet channels having uni-axial strains caused by metal source/drains  
Embodiments described include straining transistor quantum well (QW) channel regions with metal source/drains, and conformal regrowth source/drains to impart a uni-axial strain in a MOS channel...
8501506 Method for manufacturing light emitting diode  
An LED includes a substrate, a first n-type GaN layer, a connecting layer, a second n-type GaN layer, a light emitting layer, and a p-type GaN layer formed on the substrate in sequence, the...
8501507 Method for large scale manufacture of thin film photovoltaic devices using multi-chamber configuration  
A method for large scale manufacture of photovoltaic devices includes loading a substrate into a load lock station and transferring the substrate in a controlled ambient to a first process station....
8497144 Method for manufacturing light emitting chip having buffer layer with nitride semiconductor in carbon nano tube structure  
A method for manufacturing a light emitting chip comprises: providing a substrate with a catalyst layer formed thereon, the catalyst layer being etched to form a number of patterns which are spaced...
8497143 Reflective pockets in LED mounting  
An LED device with improved LED efficiency is presented. An LED die is positioned within a pocket formed by a substrate and an opening in a supporting layer arranged thereon. The increase in the...
8497525 Light emitting device and method of manufacturing the same  
A high-quality light emitting device is provided which has a long-lasting light emitting element free from the problems of conventional ones because of a structure that allows less degradation, and...
8492186 Method for producing group III nitride semiconductor layer, group III nitride semiconductor light-emitting device, and lamp  
The present invention is a method for producing a group III nitride semiconductor layer in which a single crystal group III nitride semiconductor layer (103) is formed on a substrate (101), the...
8492784 Semiconductor device and method for producing the same, and power supply  
A semiconductor device includes: a semiconductor chip including a nitride semiconductor layered structure including a carrier transit layer and a carrier supply layer; a first resin layer on the...
8492764 Light-emitting device and manufacturing method thereof  
A light-emitting device in which plural kinds of circuits are formed over one substrate and plural kinds of thin film transistors in accordance with characteristics of the plural kinds of circuits...
8492185 Large area nonpolar or semipolar gallium and nitrogen containing substrate and resulting devices  
A method for fabricating large-area nonpolar or semipolar GaN wafers with high quality, low stacking fault density, and relatively low dislocation density is described. The wafers are useful as...
8492178 Method of monitoring fabrication processing including edge bead removal processing  
Systems and method for monitoring semiconductor wafer fabrication processing, for example based upon EBR line inspection, including capturing at least one image of a wafer at an intermediate stage...
8487295 Semiconductor structures and devices including semiconductor material on a non-glassy bonding layer  
Methods of fabricating semiconductor structures and devices include bonding a seed structure to a substrate using a glass. The seed structure may comprise a crystal of semiconductor material....
8486729 Light-emitting device having a thinned structure and the manufacturing method thereof  
A semiconductor light-emitting device having a thinned structure comprises a thinned structure formed between a semiconductor light-emitting structure and a carrier. The manufacturing method...