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8519425 Light-emitting device and manufacturing method thereof  
A light-emitting device includes a substrate and a planarizing film above the substrate. The planarizing film has a recessed portion between non-recessed portions. A bottom electrode layer is above...
8518727 Method of forming encapsulation substrate for an organic light emitting diode display device  
An organic light emitting diode (OLED) display device and method of fabrication that includes a substrate having a device region, an outer dam region and an encapsulation region. The encapsulation...
8518730 Sapphire wafer dividing method  
A sapphire wafer dividing method including a cut groove forming step of forming a plurality of cut grooves on the back side of a sapphire wafer along a plurality of crossing division lines formed...
8518726 Uses of a carbon nanobud molecule and devices comprising the same  
A carbon nanobud molecule (3, 9, 18, 23, 29, 36) having at least one fullerene part covalently bonded to the side of a tubular carbon molecule is used to interact with electromagnetic radiation in...
8519413 Organic light emitting diode display  
An organic light emitting diode display is disclosed. The display includes a substrate, a first electrode placed on the substrate, an organic emissive layer placed on the first electrode, a second...
8513697 Light emitting device, method of manufacturing the same, light emitting device package, and illumination system  
A light emitting device includes a light emitting structure including a first conductive semiconductor layer, a second conductive semiconductor layer, and an active layer between the first and...
8513118 Method for producing compound semiconductor light-emitting device  
It is intended to provide a production method that enables at least one of improvement in transparency, reduction in sheet resistance, homogenization in planar distribution of sheet resistance, and...
8513036 Photonic quantum ring laser and fabrication method thereof  
A photonic quantum ring (PQR) laser includes an active layer having a multi-quantum-well (MQW) structure and etched lateral face. The active layer is formed to be sandwiched between p-GaN and n-GaN...
8513039 Method for fabricating semiconductor lighting chip  
A method for fabricating a semiconductor lighting chip includes steps of: providing a substrate; forming a first etching layer on the substrate; forming a connecting layer on the first etching...
8514902 P-type isolation between QCL regions  
A quantum cascade laser and its method of fabrication are provided. The quantum cascade laser comprises one or more p-type electrical isolation regions and a plurality of electrically isolated...
8513687 Semiconductor light emitting device and semiconductor light emitting apparatus  
A semiconductor light emitting device, includes: a stacked structure unit including a first semiconductor layer, a second semiconductor layer, and a light emitting layer provided between the first...
8513636 Vertical diodes for non-volatile memory device  
A steering device. The steering device includes an n-type impurity region comprising a zinc oxide material and a p-type impurity region comprising a silicon germanium material. A pn junction region...
8507925 Optoelectronic device and method for manufacturing the same  
An optoelectronic device, comprising: a substrate; a plurality of the first semiconductor rods formed on the substrate, contacted with the substrate, and exposed partial of the first surface of the...
8508009 Microlens and an image sensor including a microlens  
A microlens, an image sensor including the microlens, a method of forming the microlens and a method of manufacturing the image sensor are provided. The microlens includes a polysilicon pattern,...
8508434 Superimposed displays  
Various embodiments of methods and systems for constructing, configuring, and utilizing displays constructed from superimposed display subunits are disclosed. In one aspect, a display includes a...
8502263 Light-emitter-based devices with lattice-mismatched semiconductor structures  
Some aspects for the invention include a method and a structure including a light-emitting device disposed over a second crystalline semiconductor material formed over a semiconductor substrate...
8501508 Method of forming quantum well mosfet channels having uni-axial strains caused by metal source/drains  
Embodiments described include straining transistor quantum well (QW) channel regions with metal source/drains, and conformal regrowth source/drains to impart a uni-axial strain in a MOS channel...
8501506 Method for manufacturing light emitting diode  
An LED includes a substrate, a first n-type GaN layer, a connecting layer, a second n-type GaN layer, a light emitting layer, and a p-type GaN layer formed on the substrate in sequence, the...
8501507 Method for large scale manufacture of thin film photovoltaic devices using multi-chamber configuration  
A method for large scale manufacture of photovoltaic devices includes loading a substrate into a load lock station and transferring the substrate in a controlled ambient to a first process station....
8497144 Method for manufacturing light emitting chip having buffer layer with nitride semiconductor in carbon nano tube structure  
A method for manufacturing a light emitting chip comprises: providing a substrate with a catalyst layer formed thereon, the catalyst layer being etched to form a number of patterns which are spaced...
8497143 Reflective pockets in LED mounting  
An LED device with improved LED efficiency is presented. An LED die is positioned within a pocket formed by a substrate and an opening in a supporting layer arranged thereon. The increase in the...
8497525 Light emitting device and method of manufacturing the same  
A high-quality light emitting device is provided which has a long-lasting light emitting element free from the problems of conventional ones because of a structure that allows less degradation, and...
8492186 Method for producing group III nitride semiconductor layer, group III nitride semiconductor light-emitting device, and lamp  
The present invention is a method for producing a group III nitride semiconductor layer in which a single crystal group III nitride semiconductor layer (103) is formed on a substrate (101), the...
8492784 Semiconductor device and method for producing the same, and power supply  
A semiconductor device includes: a semiconductor chip including a nitride semiconductor layered structure including a carrier transit layer and a carrier supply layer; a first resin layer on the...
8492764 Light-emitting device and manufacturing method thereof  
A light-emitting device in which plural kinds of circuits are formed over one substrate and plural kinds of thin film transistors in accordance with characteristics of the plural kinds of circuits...
8492185 Large area nonpolar or semipolar gallium and nitrogen containing substrate and resulting devices  
A method for fabricating large-area nonpolar or semipolar GaN wafers with high quality, low stacking fault density, and relatively low dislocation density is described. The wafers are useful as...
8492178 Method of monitoring fabrication processing including edge bead removal processing  
Systems and method for monitoring semiconductor wafer fabrication processing, for example based upon EBR line inspection, including capturing at least one image of a wafer at an intermediate stage...
8487295 Semiconductor structures and devices including semiconductor material on a non-glassy bonding layer  
Methods of fabricating semiconductor structures and devices include bonding a seed structure to a substrate using a glass. The seed structure may comprise a crystal of semiconductor material....
8486729 Light-emitting device having a thinned structure and the manufacturing method thereof  
A semiconductor light-emitting device having a thinned structure comprises a thinned structure formed between a semiconductor light-emitting structure and a carrier. The manufacturing method...
8486734 Alternating current light-emitting device and fabrication method thereof  
An alternating current light-emitting device includes a substrate, a plurality of microdie light-emitting elements formed on the substrate, a rectifying element-dedicated member formed on a surface...
8485774 Apparatus for manufacturing solar cells and process for operating such apparatus  
Apparatus (1) for manufacturing solar cell matrices includes several stringers (2) for forming strings from solar cells, a lay-up and interconnection station (5) for arranging and interconnecting...
8486725 Color control by alteration of wavelenght converting element  
A light emitting device is produced by depositing a layer of wavelength converting material over the light emitting device, testing the device to determine the wavelength spectrum produced and...
8476615 GaN-based semiconductor light emitting device and the method for making the same  
A GaN-based semiconductor light emitting device 11a includes a substrate 13 composed of a GaN-based semiconductor having a primary surface 13a tilting from the c-plane toward the m-axis at a tilt...
8476648 Light emitting device and method of manufacturing the same  
The present invention relates to a light emitting device and a method of manufacturing the light emitting device. According to the present invention, the light emitting device comprises a...
8476644 Optoelectronic component and method for the manufacture of a plurality of optoelectronic components  
An optoelectronic component with a semiconductor body includes an active region suitable for generating radiation, and two electrical contacts arranged on the semiconductor body. The contacts are...
8476094 Method for making light emitting diode  
A method for making light emitting diode, the method includes the following steps. First, a substrate having an epitaxial growth surface is provided. Second, a carbon nanotube layer is suspended...
8476088 Light emitting diode having improved light emission efficiency and method for fabricating the same  
Provided is a light emitting diode (LED) having improved light emission efficiency, which can effectively overcome a technical limit of the related art by implementing a surface plasma resonance...
8470618 Method of manufacturing a light-emitting diode having electrically active and passive portions  
The disclosure relates to a making a matrix of III-V nitride, the matrix including at least an active first portion through which an electrical current passes and at least a passive second portion...
8470617 Composition including material, methods of depositing material, articles including same and systems for depositing material  
Methods for depositing nanomaterial onto a substrate are disclosed. Also disclosed are compositions useful for depositing nanomaterial, methods of making devices including nanomaterials, and a...
8470628 Methods to fabricate silicide micromechanical device  
A method is disclosed to fabricate an electro-mechanical device such as a MEMS or NEMS switch. The method includes providing a silicon layer disposed over an insulating layer that is disposed on a...
8470697 Method of forming p-type compound semiconductor layer  
A method of forming a p-type compound semiconductor layer includes increasing a temperature of a substrate loaded into a reaction chamber to a first temperature. A source gas of a Group III...
8471290 Compositions and methods for generating white light  
Crystalline inorganic-organic hybrid structures having a plurality of layers of a repeating unit characterized by a first organic ligand layer, a second organic ligand layer, and a two-dimensional...
8470619 Selective decomposition of nitride semiconductors to enhance LED light extraction  
A method of texturing a surface within or immediately adjacent to a template layer of a LED is described. The method uses a texturing laser directed through a substrate to decompose and pit a...
8466455 Device structure  
Organic light emitting devices are provided having multiple subpixels. An organic spacer layer is provided in at least one subpixel to protect the emissive layer of the at least one subpixel from...
8466459 Organic light emitting display device and method of manufacturing the same  
An organic light emitting display device having a uniform thin film in a sub-pixel region, and a method of manufacturing the organic light emitting display device. The organic light emitting...
8461612 ***WITHDRAWN PATENT AS PER THE LATEST USPTO WITHDRAWN LIST***
Light-emitting device and lighting device
 
Provided is a light-emitting device having a structure in which a high refractive index component is provided between a solid light-emitting element and air, has an uneven structure on a surface in...
8461569 Semiconductor device and a method of fabricating a semiconductor device  
A semiconductor device includes a quantum dot and a plurality of layers, wherein said plurality of layers includes: a first layer; a stressor layer; and a patterned layer wherein said stressor...
8461618 Semiconductor light-emitting device and method of producing the same  
A semiconductor light-emitting device includes a substrate, an n-type semiconductor layer located above the substrate, a semiconductor light-emitting layer located on the n-type semiconductor...
8460959 Fast thermal annealing of GaN LEDs  
Methods of performing fast thermal annealing in forming GaN light-emitting diodes (LEDs) are disclosed, as are GaN LEDs formed using fast thermal annealing having a time duration of 10 seconds or...
8461058 Organic layer deposition apparatus, and method of manufacturing organic light-emitting display apparatus using the same  
An organic layer deposition apparatus including an electrostatic chuck combined with a substrate so as to fixedly support the substrate. The organic layer deposition apparatus including a receiving...