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7192533 |
Method of manufacturing nanowires and electronic device
In the method, semiconductor substrates are etched to provide nanowires, said substrates comprising a first layer of a first material and a second layer of a second material with a mutual...
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7192795 |
Method of making light emitting device with silicon-containing encapsulant
A method of making a light emitting device is disclosed. The method includes providing a light emitting diode and forming an encapsulant in contact with the light emitting diode; wherein forming...
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7192793 |
Fused passive organic light emitting displays
An organic light emitting device display may include transverse row and column lines. In a passively driven OLED display, a fuse may be positioned between the OLED material and the row electrode....
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7189588 |
Group III nitride semiconductor substrate and its manufacturing method
The present invention provides a group III nitride semiconductor substrate with low defect density as well as small warp and a process for producing the same; for instance, the process according to...
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7189589 |
Method of fabrication of a support structure for a semiconductor device
A method of fabricating a semiconductor device is described. In this method, a starting substrate of sufficient thickness is selected that has the required defect density levels, which may result...
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7186579 |
Method for producing a group III nitride compound semiconductor laser
A semiconductor laser comprises a sapphire substrate, an AlN buffer layer, Si-doped GaN n-layer, Si-doped Al 0.1 Ga 0.9 N n-cladding layer, Si-doped GaN n-guide layer, an active layer having...
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7186578 |
Thin sheet production method and thin sheet production device
In order to obtain a thin plate manufacturing method capable of extremely increasing manufacturing efficiency by enlarging the production scale and remarkably reducing the manufacturing cost per...
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7183125 |
Method for manufacturing surface acoustic wave device
To provide a high quality SAW device with enhanced productivity, wherein an outer face of a SAW chip mounted on a mounting substrate is covered with a heat-softened resin sheet and resin is filled...
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7183124 |
Surface mount saw device manufacturing method
With a surface mount SAW device constituted so that an outer surface of a SAW chip is covered with a heated and softened sheet resin, a resin is filled into skirts of the SAW chip, and so that an...
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7179672 |
Light-emitting device and method for manufacturing the same
A nanometer size roughened structure is formed on a surface of a light-emitting element, and luminous efficiency is improved. The roughened structure on the surface of the light-emitting element...
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7179668 |
Technique for manufacturing silicon structures
A technique for manufacturing silicon structures includes etching a cavity into a first side of an epitaxial wafer. A thickness of an epitaxial layer is selected, based on a desired depth of the...
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7179667 |
Semiconductor base material and method of manufacturing the material
As shown in FIG. 1 ( a ), substrate 1 having a growth plane having a concavo-convex surface is used. When GaN group crystal is vapor phase grown using this substrate, the concavo-convex shape...
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7179669 |
Tunable semiconductor laser and method thereof
A tunable semiconductor laser including a Fabry-Perot filter and an electrode array is disclosed. The propagation direction of the light beam in the cavity can be consecutively shifted applying...
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7176480 |
Light-emitting semiconductor device having a quantum well active layer, and method of fabrication
A light-emitting diode has a low-resistivity silicon substrate on which there are laminated a buffer layer, an n-type lower confining layer, an active layer of multiple quantum well configuration,...
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7172429 |
Method of manufacturing semiconductor light emitting device
The present invention provides a semiconductor light emitting device where a spatial change in an In composition ratio is small within a plane of an active layer and device properties such as...
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7172920 |
Method of manufacturing an image device
An imaging device comprises a select line, a first signal line crossing the select line, and a first pixel provided at a portion corresponding to a crossing portion of the select line and the first...
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7169629 |
VCSEL and the fabrication method of the same
A fabrication method of VCSEL is used to form a contact electrode on a VCSEL in a resonance cavity. A heavily doped layer is formed in a resonance cavity where the light intensity is the weakest. A...
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7166870 |
Light emitting devices with improved extraction efficiency
Light-emitting devices, and related components, systems and methods are disclosed.
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7163831 |
Light-emitting element, production method thereof, and light-emitting apparatus
The present invention provides an light-emitting element in which an organic compound layer containing a carbonate, for example Cs 2 CO 3 and Li 2 CO 3 , as a dopant is in substantially electrical...
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7163902 |
Infra-red light-emitting device and method for preparing the same
The present infra-red light-emitting device includes a substrate with a first window layer, a silicon dioxide layer positioned on the first window layer, silicon nanocrystals distributed in the...
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7163876 |
Method for manufacturing group-III nitride compound semiconductor, and group-III nitride compound semiconductor device
In the epitaxial growth process in which each growth region D is zoned by a mask 2 formed in grid pattern, because a consumption region C of the Group III nitride compound semiconductor is formed...
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7157293 |
Method for making a semiconductor light emitting device
A method for making a semiconductor light emitting device comprises the steps of: (a) forming a plurality of buttresses on a first supporting substrate such that the buttresses are separated by a...
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7153714 |
Method of manufacturing flat panel displays
To enable formation of a pattern of constituent elements, arranged in correspondence with an arrangement of cells in a display region, as desired or required with a minimized quantity of the film...
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7153713 |
Method for manufacturing high efficiency light-emitting diodes
A method for manufacturing a high efficiency light-emitting diode (LED) is disclosed. In the method, a substrate is provided, in which an N-type buffer layer, an N-type cladding layer and an active...
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7151006 |
Process to reduce the dark current in semiconducting films
A method of coating the joined crystals within a semiconductor conversion layer to reduce the dark current without compromising the sensitivity of the conversion layer is presented. A semiconductor...
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7148075 |
Vertical semiconductor devices or chips and method of mass production of the same
The vertical semiconductor chips or devices have all of advantages of flip chip technique and without its disadvantages. The present invention discloses methods of mass production of the vertical...
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7148517 |
Light emitting diode and method of the same
A light emitting diode and a method of the same are provided. The light emitting diode includes a light-emitting structure, a silicon substrate and a bonding layer. The light-emitting structure...
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7144747 |
Method for thermally treating a substrate that comprises several layers
A method of thermally treating a substrate that has multiple layers is provided. A substrate layer that is covered on opposite sides is oxidized from side edges thereof toward a center thereof such...
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7141445 |
Semiconductor light emitting device and method for manufacturing same
There are provided a semiconductor light emitting device wherein the variation in tone in each device is small and the variation in tone due to deterioration with age is also small, and a method...
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7141441 |
Surface emitting semiconductor laser and manufacturing method thereof
There is provided a surface emitting semiconductor laser satisfying a requirement of making a transverse mode stable and having characteristics of high output power, low resistance, high...
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7129102 |
Light-emitting device, method of manufacturing a light-emitting device, and electronic equipment
The present invention uses plastic film in vacuum sealing an OLED. Inorganic insulating films which can prevent oxygen or water from being penetrated therein and an organic insulating film which...
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7129103 |
Semiconductor light emitting element and method of making the same
A semiconductor light-emitting element 10 includes a silicon single crystal substrate 20 having a first and a second surfaces 20 a , 20 b in head-tail relationship with each other, a GaN-based...
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7125732 |
Semiconductor light emitting device and its manufacturing method
In a semiconductor light emitting device such as a semiconductor laser using nitride III-V compound semiconductors and having a structure interposing an active layer between an n-side cladding...
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7122446 |
Semiconductor light-emitting element
Part of light emitted downward by an active layer is reflected by an electrode functioning as a reflective layer, and travels upward to radiate outside. Since the electrode is made of a metal, it...
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7122398 |
Manufacturing of optoelectronic devices
A method for manufacturing optoelectronic devices is disclosed. A layered structure may be formed with a plurality of layers including a bottom electrode layer, a top electrode layer, and one or...
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7118928 |
Method of forming a semiconductor phosphor layer by metalorganic chemical vapor deposition for use in light-emitting devices
Light-emitting devices having a semiconductor phosphor layer formed by metalorganic chemical vapor deposition (MOCVD). The semiconductor phosphor layer may be any Group III nitride semiconductor...
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7118930 |
Method for manufacturing a light emitting device
A method for manufacturing a light emitting device includes (a) preparing a semiconductor element formed with a crystalline substrate, and a temporary element, the temporary element including a...
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7118942 |
Method of making atomic integrated circuit device
A method of mass-producing a solid state device comprises providing an atomically smooth, solid state material layer no more than 40 Angstroms thick. This layer is uniformly and defect-freely...
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7118929 |
Process for producing an epitaxial layer of gallium nitride
The present invention relates to a process for producing an epitaxial layer of gallium nitride (GaN) as well as to the epitaxial layers of gallium nitride (GaN) which can be obtained by said...
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7119487 |
Semiconductor light emitting device with stacked light emitting elements
A light emitting device which can be easily manufactured and can control the positions of light emission precisely, and an optical device. A first and second light emitting elements are formed on...
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7119030 |
Process for lining a surface using an organic film
The present invention relates to a method for cladding a simple or complex surface, electrically conducting or semiconducting, by means of an organic film from at least one precursor of said...
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7115427 |
Red light-emitting device and method for preparing the same
The present red light-emitting device includes a substrate with a first window layer, a silicon dioxide layer positioned on the first window layer, a plurality of silicon nanocrystals distributed...
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7112862 |
Light emitting and/or detecting device and method of manufacturing the same
A light emitting and detecting device and a method of manufacturing the same are provided. The method includes forming an insulating layer on a substrate doped with an n-type dopant or a p-type...
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7112456 |
Vertical GaN light emitting diode and method for manufacturing the same
Disclosed are a vertical GaN light emitting diode and a method for manufacturing the same. The vertical GaN light emitting diode comprises a first conductive GaN clad layer with an upper surface...
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7112455 |
Semiconductor optical devices and method for forming
A semiconductor optical device includes an insulating layer, a photoelectric region formed on the insulating layer, a first electrode having a first conductivity type formed on the insulating layer...
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7109525 |
Point source light-emitting diode
A point source light emitting-diode (LED) comprises a substrate, an epitaxy structure, a first electrode, an isolation layer, a bonding layer, a contact layer, and a connection bridge. The epitaxy...
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7109048 |
Semiconductor light emitting device and fabrication method thereof
A semiconductor light emitting device and a fabrication method thereof includes: providing a substrate; forming an n-type semiconductor layer, a light emitting layer, a p-type semiconductor layer...
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7109053 |
Method for preparing optical device by dicing
A method for preparing an optical device by dicing includes applying a dicing tape onto the back face of a substrate provided thereon with a large number of optical elements on the surface thereof...
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7105365 |
Method of manufacturing a semiconductor device
The present invention supplies a manufacturing method of a semiconductor device, which includes a non-contact inspection process capable of confirming if a circuit or circuit element formed on an...
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7105859 |
Nitride semiconductor light-emitting diode chip and method of manufacturing the same
A nitride semiconductor light emitting diode chip includes a transparent substrate and a nitride semiconductor stacked-layer structure formed on the upper surface of the substrate, the nitride...
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