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7407859 |
Compound semiconductor device and its manufacture
A compound semiconductor device has: a substrate; a GaN channel layer; an n-type AlqGal-qN (0<q (1) electron supply layer; an n-type GaN cap layer; a gate electrode disposed on the cap layer and...
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7405092 |
Method of manufacturing electron-emitting device and method of manufacturing image display apparatus
A method of manufacturing an electron-emitting device with a stable electrical characteristics without variation per each of the devices is provided, by forming, on a substrate, a cathode...
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7402091 |
Backlit displays including organic light-emissive material
A display device comprising: a light switching unit comprising an array of pixels each operable to vary the transmission of light therethrough; and a backlight comprising a first series of regions...
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7399649 |
Semiconductor light-emitting device and fabrication method thereof
An underlying layer ALY of GaN is formed on a sapphire substrate SSB; a transfer layer TLY of GaN with a bump and dip shaped surface is formed on the underlying layer ALY; a light absorption layer...
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7399650 |
Wavelength converted light emitting apparatus using phosphor and manufacturing method thereof
Disclosed herein is a wavelength converted light emitting apparatus comprising a substrate, a light emitting diode, and a phosphor layer. The substrate is formed at its upper surface with first and...
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7399651 |
LED package structure and mass production method of making the same
An LED package structure includes a lower substrate, an upper substrate disposed on the lower substrate and having a though hole exposing a portion of the upper surface of the lower substrate; an...
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7393258 |
Method of integrating organic light emitting diode and organic field effect transistor
Provided is a method of integrating an organic light emitting diode (OLED) and an organic field effect transistor (OFET) including: preparing an organic field effect transistor including at least...
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7393705 |
Methods of fabricating light emitting diodes that radiate white light
A method for fabricating an LED that radiates white spectrum light. A phosphor that radiates a white spectrum after excitation in the blue or UV spectrum is uniformly deposited onto a GaN epitaxial...
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7393710 |
Fabrication method of multi-wavelength semiconductor laser device
The present invention relates to a two-wavelength semiconductor laser device, more particularly, to a fabrication method of a multi-wavelength semiconductor laser device. In this method, a...
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7393762 |
Charge-free low-temperature method of forming thin film-based nanoscale materials and structures on a substrate
A method of forming a nanostructure at low temperatures. A substrate that is reactive with one of atomic oxygen and nitrogen is provided. A flux of neutral atoms of at least one of nitrogen and...
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7390683 |
Method of manufacturing a semiconductor device including a slab layer with a periodic air hole structure and a linear defect region
A semiconductor device has a two-dimensional slab photonic crystal structure in which a substrate supports a sheet-like slab layer including, sequentially stacked, a lower cladding layer, an active...
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7387904 |
Light emitting element and manufacturing method thereof, and light emitting device using the light emitting element
A light-emitting element has a layer including an organic material between a first electrode and a second electrode, and further has a layer including a metal oxide between the second electrode and...
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7383875 |
Heating/cooling method, manufacturing method of image displaying apparatus, heating/cooling apparatus, and heating/cooling processing apparatus
A heating/cooling method, a manufacturing method of an image displaying apparatus, a heating/cooling apparatus, and a heating/cooling processing apparatus, in which the heating and cooling of a...
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7384808 |
Fabrication method of high-brightness light emitting diode having reflective layer
A method for fabricating a high brightness LED structure is disclosed herein, which comprises at least the following steps. First, a first layered structure is provided by sequentially forming a...
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7381579 |
Donor sheet, method of manufacturing the same, method of manufacturing TFT using the donor sheet, and method of manufacturing flat panel display device using the donor sheet
A flexible flat panel display where nanoparticles are used for an active layer and the substrate is a flexible plastic, a method of manufacturing the same, a method of manufacturing a thin film...
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7374959 |
Two-wavelength semiconductor laser device and method of manufacturing the same
A two-wavelength semiconductor laser device includes a first conductive material substrate having thereon first and second regions separated from each other. A first semiconductor laser diode is...
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7375377 |
Ingan-based light-emitting diode chip and a method for the production thereof
A light-emitting diode chip ( 1 ), in which over a substrate ( 2 ), a series of epitaxial layers ( 3 ) with a radiation-emitting active structure ( 4 ) based on InGaN is disposed. Between the...
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7374958 |
Light emitting semiconductor bonding structure and method of manufacturing the same
A light emitting semiconductor bonding structure includes a structure formed by bonding a substrate onto a light emitting semiconductor. The substrate is a structure containing electric circuits....
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7371592 |
Manufacturing method of thin film transistor array panel using an optical mask
A method for manufacturing a thin film transistor array panel using a photo mask is provided. The photo mask includes: a transmitting area and a translucent area, wherein the translucent area...
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7371602 |
Semiconductor package structure and method for manufacturing the same
A semiconductor package structure comprises a chip, a plurality of pad extension traces, a plurality of via holes, a lid and a plurality of metal traces, wherein the chip has an optical component...
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7368309 |
Nitride semiconductor and fabrication method thereof
The present invention relates to nitride semiconductor, and more particularly, to GaN-based nitride semiconductor and fabrication method thereof. The nitride semiconductor according to the present...
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7368766 |
Semiconductor light emitting element and method for fabricating the same
The semiconductor laser of this invention includes an active layer formed in a c-axis direction, wherein the active layer is made of a hexagonal-system compound semiconductor, and anisotropic...
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7368316 |
Surface-emission semiconductor laser device
A method for fabricating a surface-emission semiconductor laser on a p-type substrate includes the step of interposing an Au film between an AuGeNi film or AuGe film of an n-side electrode and a...
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7365368 |
Surface-emitting type wafer and method for manufacturing the same, and burn-in method for surface-emitting type wafers
To simplify the burn-in process and reduce its cost for a surface-emitting type wafer and its manufacturing method, and for a burn-in method for a surface-emitting type wafer. A surface-emitting...
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7364926 |
Method for manufacturing gallium nitride light emitting diode devices
A method for manufacturing GaN LED devices is disclosed herein. First, a LED epitaxial layer is formed on a provisional substrate. Part of the LED epitaxial layer is removed to form a plurality of...
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7361529 |
Transistor production using semiconductor printing fluid
A transistor is formed by applying modifier coatings to source and drain contacts and/or to the channel region between those contacts. The modifier coatings are selected to adjust the surface...
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7358538 |
Organic light-emitting devices with multiple hole injection layers containing fullerene
The present invention provides layered hole injection structures including one or more layers of fullerenes for application in an organic electroluminescent device. The layered structures include a...
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7358112 |
Method of growing a semiconductor layer
A method of growing a p-type nitride semiconductor material having magnesium as a p-type dopant by molecular beam epitaxy (MBE), comprises supplying ammonia gas, gallium and magnesium to an MBE...
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7358544 |
Nitride semiconductor light emitting device
A nitride semiconductor light emitting device comprising an n-side nitride semiconductor layer and a p-side nitride semiconductor layer formed on a substrate, with a light transmitting electrode ...
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7354782 |
Group III nitride based flip-chip integrated circuit and method for fabricating
A flip-chip integrated circuit and method for fabricating the integrated circuit are disclosed. A method according to the invention comprises forming a plurality of active semiconductor devices on...
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7354785 |
Electroluminescent light emitting device
An electroluminescent device having a light emitting layer ( 25 ) containing phosphor particles ( 31, 32 ), wherein the phosphor particles protrude from the light emitting layer to cause the...
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7348203 |
Hermetic packaging
A method of hermetically packaging an electronic device ( 8 ), in an enclosure ( 2 ) comprising mutually inter-engageable first and second housing members ( 4, 6 ), comprising the steps of securing...
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7344958 |
Method for wafer bonding (A1, In, Ga)N and Zn(S, Se) for optoelectronic applications
A method for producing a wafer bonded structure between (Al, In, Ga)N and Zn(S,Se). A highly reflective and conductive distributed Bragg reflector (DBR) for relatively short optical wave lengths...
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7341878 |
Wavelength-converted semiconductor light emitting device
A material such as a phosphor is optically coupled to a semiconductor structure including a light emitting region disposed between an n-type region and a p-type region, in order to efficiently...
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7341879 |
Method of manufacturing a point source light-emitting diode
A point source light emitting-diode (LED) comprises a substrate, an epitaxy structure, a first electrode, an isolation layer, a bonding layer, a contact layer, and a connection bridge. The epitaxy...
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7335521 |
Method for the production of multilayer discs
A Method for manufacturing an optical disc substrate comprises a first substrate with at least one structured surface, on which an anti-adhesive layer, preferably carbon, is deposited and first...
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7332736 |
Article comprising gated field emission structures with centralized nanowires and method for making the same
This invention provides novel methods of fabricating novel gated field emission structures that include aligned nanowire electron emitters (individually or in small groups) localized in central...
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7332364 |
Method of fabricating a Zn-base semiconductor light emitting device
A p-n junction interface 3 is formed between an n-type ZnTe 1-x O x (0.5≦x≦1) layer 8 and a p-type ZnTe 1-x O x (0≦x<0.5) layer 7 , and the n-type ZnTeO layer 8 and/or p-type...
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7332367 |
Bouncing mode operated scanning micro-mirror
A MEMS apparatus for scanning an optical beam comprises a mirror operative to perform a rotational motion to a maximum rotation angle around a mirror rotation axis formed in a double active layer...
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7330495 |
Vertical cavity surface emitting laser diode having a high reflective distributed Bragg reflector
The present invention is to provide a vertical cavity surface emitting laser diode (VCSEL) that has a functional distributed Bragg reflector (DBR) comprised of less number of pairs of reflective...
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7329587 |
Method for the production of semi-conductor chips
A method for producing a plurality of semiconductor chips, particularly radiation-emitting semiconductor chips, each having at least one epitaxially produced functional semiconductor layer stack,...
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7329553 |
Method of fabricating one-way transparent optical system
A method of fabricating a one-way transparent optical system by which external light is effectively intercepted and internal light passes nearly without loss is provided. The method includes:...
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7326582 |
Optical isolator device, and method of making same
The present invention is generally directed to an optical isolator device, and various methods of making same. In one illustrative embodiment, the method comprises obtaining a single SOI substrate,...
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7320898 |
Semiconductor laser device and method for fabricating the same
A semiconductor laser device of the present invention includes: an active layer formed on a substrate; a first semiconductor layer formed on the active layer and made of a nitride semiconductor of...
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7317202 |
Method for manufacture of an epitaxial structural element layer sequence and optoelectronic semiconductor chip
A technique for fabricating an epitaxial component layer sequence based on a first III/V compound semiconductor material system with a first group V element on a substrate or a buffer layer, which...
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7314801 |
Semiconductor device having a surface conducting channel and method of forming
A semiconductor device including a metal oxide layer, a channel area of the metal oxide layer, a preservation layer formed on the channel area of the metal oxide layer, and at least two channel...
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7314769 |
Organometallic complex and light-emitting element containing the same
Organometallic complexes represented by chemical formula 1 are synthesized. In chemical formula 1, R 1 to R 5 , are individually a hydrogen atom, a halogen atom, a lower alkyl group, an alkoxy...
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7314772 |
Photonic device
Embodiments of methods, apparatuses, devices, or systems for forming a photonic device are described.
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7307288 |
Semiconductor device and manufacturing method thereof
A semiconductor device capable of incorporating an element configured to accept and emit light having a short wavelength and a manufacturing method thereof are provided. A semiconductor element is...
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7306960 |
High radiance LED chip and a method for producing same
The invention concerns a light-emitting diode chip comprising a radiation-emitting active region and a window layer. To increase the luminous efficiency, the cross-sectional area of the...
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