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7569405 |
Method of manufacturing light emitting device
A method of manufacturing a light emitting device is provided which requires low cost, is easy, and has high throughput. The method of manufacturing a light emitting device is characterized in...
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7566579 |
Method of fabricating semiconductor devices with a multi-role facilitation layer
A method of growing semiconductor materials in the Indium, Aluminium, Gallium Nitride (InAlGaN) material system and to devices made therefrom, in particular optical devices in the ultraviolet to...
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7563625 |
Method of making light-emitting diodes (LEDs) with improved light extraction by roughening
Methods for fabricating a semiconductor light-emitting diode (LED) device with increased light extraction are provided. The method generally includes applying a mask to a surface of an LED wafer,...
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7563641 |
Laminated light-emitting diode display device and manufacturing method thereof
A laminated light-emitting diode display device and a manufacturing method thereof are described. The laminated light-emitting diode display device has an insulator, a circuitry device placed on...
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7560296 |
Process for producing an epitalixal layer of galium nitride
A method of manufacturing a low defect density GaN material comprising at least two step of growing epitaxial layers of GaN with differences in growing conditions, (a.) a first step of growing an...
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7560803 |
Method for fabricating semiconductor device and apparatus for fabricating the same
In a semiconductor-device fabrication method, a plurality of recessed portions are first formed in the principal surface of a substrate. Then, a through hole, passing through the substrate in the...
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7560295 |
Methods for creating gapless inner microlenses, arrays of microlenses, and imagers having same
Methods of fabricating a microlens and/or array of microlenses used to focus light on photosensors, by forming a protective coating over a microlenses precursor material, and etching the protective...
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7560294 |
Light emitting element and method of making same
A light emitting element is provided with a semiconductor layer having a light emitting layer and an uneven surface, and a transparent material formed on the uneven surface. The transparent...
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7556974 |
Optical semiconductor device with multiple quantum well structure
An optical semiconductor device with a multiple quantum well structure, in which well layers and barrier layers comprising various types of semiconductor layers are alternately layered, in which...
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7553683 |
Method of forming pre-fabricated wavelength converting elements for semiconductor light emitting devices
A semiconductor light emitting device is provided with a separately fabricated wavelength converting element. The wavelength converting element, of e.g., phosphor and glass, is produced in a sheet...
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7554126 |
Semiconductor light-emitting element, manufacturing method and mounting method of the same and light-emitting device
An LED chip of the present invention has a structure in which an n-type semiconductor layer and a p-type semiconductor layer are successively formed on the lower face of an element substrate, with...
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7553682 |
Method of manufacturing vertical nitride light emitting device
According to a method of manufacturing a vertical nitride light emitting device, a first conductivity type nitride layer, an active layer and a second conductivity type nitride layer are...
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7550304 |
Method for manufacturing semiconductor laser element
A method for manufacturing a semiconductor laser element includes forming a semiconductor laminated structure, having an active layer, on a substrate; etching the semiconductor laminated structure...
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7550398 |
Semiconductor device and method of fabricating the same
A semiconductor device includes a silicon nitride (SiN) film provided on a crystal surface of a nitride semiconductor, the SiN film having a hydrogen content equal to or smaller than 15 percent.
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7544524 |
Alternating current light-emitting device
An alternating current light-emitting device and the fabrication method thereof is disclosed. The alternating current light-emitting device includes at least one alternating current micro-die...
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7545011 |
Semiconductor mount
A mount for a semiconductor device has a first surface with at least one contact region and a second surface. The mount has a substrate to receive the second surface of the semiconductor device and...
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7541622 |
Super luminescent diode and manufacturing method thereof
To provide a superluminescent diode capable of emitting high output super luminescent light having a central wavelength within a range of 0.95 μm to 1.2 μm and an undistorted beam cross section,...
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7541204 |
Method of manufacturing an optical semiconductor element
A method of manufacturing an optical semiconductor element comprises: forming a striped protruding body by selectively dry etching an InGaAlP layer along its thickness, the InGaAlP layer being...
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7541205 |
Fabrication method of transparent electrode on visible light-emitting diode
A method for forming a transparent electrode on a visible light-emitting diode is described. A visible light-emitting diode element is provided, and the visible light-emitting diode element has a...
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7537945 |
Semiconductor laser device and method of manufacturing the same, and optical transmission module and optical disk apparatus using the semiconductor laser device
Provided are a semiconductor laser device capable of stable operation at the time of high power output without damage to a resonator end surface and a method of manufacturing the same, as well as...
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7537944 |
Method for manufacturing p-type group III nitride semiconductor, and group III nitride semiconductor light-emitting device
An object of the present invention is to provide an efficient method for manufacturing a p-type group III nitride semiconductor that has adequate carrier concentration and a surface with a low...
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7538340 |
Low side emitting light source and method of making the same
A light source having a die, a substrate, and a housing is disclosed. The die has a semiconducting light emitting device thereon, the die having a top surface and a bottom surface, light being...
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7538395 |
Method of forming low capacitance ESD device and structure therefor
In one embodiment, the ESD device uses highly doped P and N regions deep within the ESD device to form a zener diode that has a controlled breakdown voltage.
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7534633 |
LED with substrate modifications for enhanced light extraction and method of making same
The surface morphology of an LED light emitting surface is changed by applying a reactive ion etch (RIE) process to the light emitting surface. Etched features, such as truncated pyramids, may be...
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7534634 |
Surface-mountable light-emitting diode light source and method of producing a light-emitting diode light source
A surface-mountable light-emitting diode light source is described, in which the leadframe-bends toward the rear side of the package that are required for surface mounting lie within a transparent...
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7535945 |
Semiconductor laser apparatus and method of manufacturing the same
Second and third p-side pad electrodes are formed on an insulating film of a blue-violet semiconductor laser device on both sides of a first p-side pad electrode. The second p-side pad electrode...
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7531739 |
Build-in-place method of manufacturing thermoelectric modules
A method of manufacturing a thermoelectric module is provided. The method includes mounting a thermoelectric material to a substrate such that a portion of the thermoelectric material covers a...
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7531370 |
Light-emitting diode and its manufacturing method
It is an object of the present invention to provides the light emitting diode having a light emitting part of an AlGaInP type, and having a current diffusion layer which includes In on a light...
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7524686 |
Method of making light emitting diodes (LEDs) with improved light extraction by roughening
Methods are provided for fabricating a semiconductor light-emitting diode (LED) device by providing an LED wafer assembly having an LED stack and selectively roughening and/or texturing a...
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7524692 |
Method of producing nitride layer and method of fabricating vertical structure nitride semiconductor light emitting device
The present invention provides methods for manufacturing a nitride layer and a vertical nitride semiconductor light emitting device. In manufacturing the nitride layer according to the invention, a...
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7521268 |
Method and apparatus for manufacturing display
Provided is a method of manufacturing a display which includes an insulating substrate and a structure formed on the insulating substrate and including a display element, including forming a...
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7521113 |
Light-emitting devices with fullerene layer
The present invention provides a layered structure including a fullerene layer exhibiting Ohmic behavior. The layered device includes a layer of fullerenes and a layer of a fluoride compound of...
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7521270 |
OLED patterning method
A method of forming a patterned, light-emitting device that includes mechanically locating a first masking film over a substrate; forming first openings in first locations in the masking film; and...
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7521269 |
Single-crystal nitride-based semiconductor substrate and method of manufacturing high-quality nitride-based light emitting device by using the same
A nitride-based light emitting device is manufactured by using a single-crystal nitride-based semiconductor substrate. A seed material layer is deposited on a first substrate where organic residues...
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7510886 |
Method of manufacturing semiconductor photodetector
A method of manufacturing a semiconductor photodetector having spectral sensitivity close to relative luminous characteristics at low cost includes steps of sealing a light receiving surface side...
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7510885 |
Method of preparing electronically connected optoelectronic devices, and optoelectronic devices
A method of preparing a plurality of electrically connected organic optoelectronic devices on a substrate comprising firstly preparing a plurality of organic optoelectronic devices on a substrate,...
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7511314 |
Light emitting device and method of fabricating the same
Disclosed is a light-emitting device ( 100 ) has a light-emitting layer portion ( 24 ) which is composed of a group III-V compound semiconductor and a transparent thick-film semiconductor layer (...
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7510891 |
Organic light emitting display device and method of manufacturing the same
A method of manufacturing an organic light emitting display device and the organic light emitting display device which reduces generation of dark spots by particles are disclosed. The method of...
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7510887 |
Semiconductor laser device
This semiconductor laser device has the same structure as the conventional broad-area type semiconductor laser device, except that both side regions of light emission areas of active and clad...
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7510892 |
Light emitting diode structure and manufacturing method thereof
A light emitting diode structure has a silicon substrate, a conductive layer, and a light emitting diode. The top surface of the silicon substrate has a cup-structure like paraboloid, and the...
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7508010 |
Boron phoshide-based compound semiconductor device, production method thereof and light-emitting diode
A boron phosphide-based compound semiconductor device with excellent device properties, comprising a boron phosphide-based compound semiconductor layer having a wide bandgap is provided. The boron...
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7501293 |
Semiconductor device in which zinc oxide is used as a semiconductor material and method for manufacturing the semiconductor device
A semiconductor device having excellent crystallinity and excellent electric characteristics includes a ZnO thin film having excellent surface smoothness. ZnO-based thin films (an n-type contact...
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7501299 |
Method for controlling the structure and surface qualities of a thin film and product produced thereby
A system and method for providing improved surface quality following removal of a substrate and template layers from a semiconductor structure provides an improved surface quality for a layer (such...
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7501294 |
VCSEL for high speed lower power optical link
A method of manufacturing a coherent light generator, especially a vertical cavity surface emitting laser (VCSEL), includes a gallium based semiconductor alloy substrate, a first DBR stack over the...
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7498187 |
Method for producing gallium nitride light emitting diode wafer
The present invention relates to a method for improving the performance of P-type ohmic contact of gallium nitride LED wafer. Magneto sputtering is used to spray nickel material in nano particles...
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7498184 |
Production method for semiconductor device
An object of the present invention is to provide a method of producing a Group III nitride semiconductor device having a chip form which is pentagonal or more highly polygonal maintaining good area...
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7494831 |
Process for making stacks of islands made of one semiconducting material encapsulated in another semiconducting material
The invention relates to the production of a stacked structure of planes of islands of a first semiconducting material encapsulated in a second semiconducting material on a substrate, comprising...
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7494832 |
Semiconductor optical devices and method for forming
A semiconductor optical device includes an insulating layer, a photoelectric region formed on the insulating layer, a first electrode having a first conductivity type formed on the insulating layer...
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7491560 |
Fabricating method of flat panel display device
A fabricating method of a flat panel display device according to the present invention includes providing a thin film on a substrate; providing a soft mold having a groove and a projection on the...
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7488613 |
Nitride-based light-emitting device and method of manufacturing the same
A nitride-based light-emitting device capable of suppressing reduction of the light output characteristic as well as reduction of the manufacturing yield is provided. This nitride-based...
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