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6831300 |
Semiconductor light emitting device, manufacturing method of a semiconductor light emitting device and connection structure of an electrode layer
In a semiconductor light emitting device configured to extract light through a substrate thereof, an electrode layer is formed on a p-type semiconductor layer (such as p-type GaN layer) formed on...
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6830945 |
Method for fabricating a non-planar nitride-based heterostructure field effect transistor
A method for fabricating a non-planar heterostructure field effect transistor using group III-nitride materials with consistent repeatable results is disclosed. The method provides a substrate on...
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6828168 |
Method of fabrication of a micro-electromechanically tunable vertical cavity photonic device
A tunable Fabry-Perot vertical cavity photonic device and a method of its fabrication are presented. The device comprises top and bottom semiconductor DBR stacks and a tunable air-gap cavity...
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6828169 |
Method of forming group-III nitride semiconductor layer on a light-emitting device
A method of forming a group-III nitride semiconductor layer on a light-emitting device. First, a substrate is provided. Next, a buffer layer is formed on the substrate. A hydrogen treatment is...
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6828166 |
Low temperature distributed feedback laser with loss grating and method
A low threshold distributed feedback (DFB) laser is constructed for improved performance at subzero temperatures. A loss grating is employed to enhance the probability that lasing occurs near the...
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6826216 |
Semiconductor laser and method of production thereof
A window structure type AlGaInP semiconductor laser able to suppress abnormal growth in the vicinity of a ridge and having good surface morphology, wherein a least one step-like structure is...
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6825054 |
Light emitting ceramic device and method for fabricating the same
A light-emitting ceramic based panel, hereafter termed “electroceramescent” panel, and alternative methods of fabrication for the same are claimed. The electroceramescent panel is formed on a...
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6821804 |
Enhanced light extraction in LEDs through the use of internal and external optical elements
This invention describes new LEDs having light extraction structures on or within the LED to increase its efficiency. The new light extraction structures provide surfaces for reflecting, refracting...
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6822305 |
Optical integrated circuit
The optical integrated circuit includes a substrate; and, a plurality of optical elements supported by the substrate being optically coupled with each other, each optical element comprising silicon...
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6821800 |
Semiconductor light-emitting device and manufacturing method thereof
In a method of manufacturing a semiconductor light-emitting device involving the steps of: forming a first semiconductor layer; forming a light-emitting layer of superlattice structure by...
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6821801 |
Manufacturing method of semiconductor laser diode
The invention provides a manufacturing method of a laser diode having buried grown layer with less crystal defects and with low consumption power and having high reliability in a buried...
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6821799 |
Method of fabricating a multi-color light emissive display
Multi-color light-emissive displays in which the constituent light-emissive devices providing the multiple colors are laterally integrated on the surface of a substrate. The light-emissive devices,...
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6821798 |
Semiconductor optical device and method for fabricating same
A monolithic semiconductor optical device with excellent temperature and modulation characteristics and associated method of manufacturing whereby the device has a semiconductor substrate, a...
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6818465 |
Nitride semiconductor element and production method for nitride semiconductor element
Nitride semiconductor devices and methods of fabricating same are provided. The nitride semiconductor device includes a crystal layer grown into a three-dimensional shape having a side surface...
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6818464 |
Double-sided etching technique for providing a semiconductor structure with through-holes, and a feed-through metalization process for sealing the through-holes
Double-sided etching techniques are disclosed for providing a semiconductor structure with one or more through-holes. The through-holes may be sealed hermetically such as by a feed-through...
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6815241 |
GaN structures having low dislocation density and methods of manufacture
Included in the invention are laminates having layers of group III-V materials having low dislocation densities, semiconductor devices fabricated using low dislocation density group III-V layers,...
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6812496 |
Group III nitride semiconductor laser device
A nitride semiconductor laser device using a group III nitride semiconductor also as a substrate offers excellent operation characteristics and a long laser oscillation life. In a layered structure...
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6812058 |
Reference data coding in solid state image sensors
Data is encoded in a solid state image sensor that includes a sensor pixel array by varying the color processing applied to at least some of the border pixels of the sensor pixel array. Data may be...
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6812051 |
Method of forming an epitaxially grown nitride-based compound semiconductor crystal substrate structure and the same substrate structure
A metal layer is formed directly on a nitride-based compound semiconductor base layer over a substrate body. The metal layer includes at least one metal exhibiting an atomic interaction, with...
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6806502 |
3-5 Group compound semiconductor and light emitting device
Provide is a 3-5 group compound semiconductor having a concentration of a p-type dopant of 1×10 17 cm − or more and 1×10 21 cm −3 or less, which can be laminated to control the carrier...
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6806109 |
Method of fabricating nitride based semiconductor substrate and method of fabricating nitride based semiconductor device
On a sapphire base ( 701 ), a GaN layer ( 702 ) and a substrate separating layer ( 703 ) are sequentially deposited, and the GaN layer ( 702 ) and the substrate separating layer ( 703 ) are...
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6803606 |
Light emitting device and manufacturing method thereof
A semiconductor light device includes a light emitting element, a reflector for reflecting a light beam outgoing from the light emitting element and a resin disposed between the light emitting...
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6803244 |
Nanostructured reactive substance and process for producing the same
In a nanostructured reactive substance and a process for producing the same, intermixing of silicon and oxidizing agent on a nanometer size scale permits virtually direct contact between the fuel...
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6800499 |
Process for preparing a hydrogen sensor
A high-sensitivity Pd/InP hydrogen sensor was made by a) forming an n-type or p-type semiconductor film on a semiconductor substrate; b) forming a patterned first metal electrode on the...
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6800214 |
Method for correcting characteristics of attenuated phase-shift mask
A method for correcting characteristics of an attenuated phase-shift mask having an attenuated layer including (a) storing a data in a memory, which shows a correlation between characteristics and...
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6800498 |
Method of producing an organic light-emissive device
A method of producing an organic light-emitting device comprising a patterned electroluminescent polymer layer arranged between two electrodes such that charge carriers can move between the first...
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6794686 |
White light source
A colorless light approaching that of white light in nature, is produced by using no more than two color LEDs covered with one or more layers of complementary color phosphorescent glue on an...
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6794209 |
Method for the in-situ fabrication of DFB lasers
The invention relates to a method for fabricating a structure in a semiconductor material. At least one etching step is carried out in-situ in an epitaxy installation and tertiary butyl chloride is...
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6794211 |
Light emitting diode and method of fabricating thereof
The light emitting diode includes an intermediate layer made of non-single crystalline material between single crystalline layers. By the intermediate layer, the boundary characteristic between the...
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6790689 |
Curved waveguide ring laser
A ring-type laser including a traveling wave cavity which incorporates at least first and second straight cavity sections and at least one curved cavity section. Corresponding first ends of the...
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6791117 |
Semiconductor light emission device and manufacturing method thereof
A semiconductor light emitting device is disclosed, which comprises a substrate, and a multi-layer semiconductor film formed on the substrate, the multi-layer semiconductor film including a...
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6787383 |
Light-emitting device and method for manufacturing the same
The light-emitting device 100 has an ITO electrode layer 8 for applying drive voltage for light emission to a light emitting layer section 24 , where the light from the light emitting layer...
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6787380 |
Electrically-conductive grid shield for semiconductors
An electrically-conductive grid placed between an LED and a photodiode prevents false triggers of the photodiode by transient electrical fields. The grid terminates the field but allows light...
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6787381 |
Semiconductor laser and method of production of the same
A semiconductor laser capable of emitting a plurality of laser light having different oscillation wavelengths which is formed with dielectric films having little fluctuation in reflectance at ends...
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6784074 |
Defect-free semiconductor templates for epitaxial growth and method of making same
A method for fabrication of defect-free epitaxial layers on top of a surface of a first defect-containing solid state material includes the steps of selective deposition of a second material,...
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6784002 |
Method to make wafer laser marks visable after bumping process
A wafer bumping method comprising the following steps of. A wafer having fields is provided. The wafer having at least one wafer identification character formed thereon within one or more of the...
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6784027 |
Light-emitting semiconductor component
A light-emitting semiconductor component having: a semiconductor element containing an active layer, electrical contacts for impressing a current into the active layer (heat being generated at the...
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6784007 |
Nano-structures, process for preparing nano-structures and devices
The present invention provides a nano-structure which can be applied to various high-function devices. The nano-structure includes an anodically oxidized layer having a plurality of kinds of pores.
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6780786 |
Method for producing a porous silicon film
A membrane structure comprising a silicon film having a grain structure including grains defining pores therebetween.
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6777253 |
Method for fabricating semiconductor, method for fabricating semiconductor substrate, and semiconductor light emitting device
The method for fabricating a semiconductor includes the steps of: (1) growing a first semiconductor layer made of Al x Ga 1−x N (0≦x≦1) on a substrate at a temperature higher than room...
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6774389 |
Optical semiconductor device
A semiconductor optical device with improved optical gain and enhanced switching characteristics. The semiconductor optical device includes positive and negative electrodes for providing holes and...
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6774405 |
Light-emitting device
A light-emitting element is mounted in a cup-like portion formed on a substrate and a case. The cup-like portion is filled with a sealing member made of a light-transmissible resin. A layer made of...
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6773940 |
Resonant tunneling diode with adjusted effective masses
A tunnel diode has a quantum well having at least one layer of semiconductor material. The tunnel diode also has a pair of injection layers on either side of the quantum well. The injection layers...
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6768135 |
Dual process semiconductor heterostructures
A method for forming an epitaxial layer involves depositing a buffer layer on a substrate by a first deposition process, followed by deposition of an epitaxial layer by a second deposition process....
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6762069 |
Method for manufacturing light-emitting element on non-transparent substrate
A method for manufacturing light-emitting device on non-transparent substrate includes the steps of forming a semiconductor epitaxial layer, a first conductive layer, a reflecting layer and a first...
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6756610 |
Light irradiating device
A light irradiating device ( 68 ) having the good radiation characteristic comprises a plurality of conductive paths ( 51 ) that are electrically separated, a photo semiconductor chips ( 65 ) fixed...
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6756246 |
Method for fabricating III-V group compound semiconductor
A method for fabricating a GaN-based III-V Group compound semiconductor is provided that utilizes a regrowth method based on the HVPE method to form a second III-V Group compound semiconductor...
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6756669 |
Heat spreader with down set leg attachment feature
Numerous embodiments of a heat spreader, comprised of a plurality of downset legs, which provides a simple and lower cost method of forming a heat spreader as compared to conventional methods are...
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6753552 |
Growth-selective structure of light-emitting diode
A growth-selective structure of LED is created by growing first and patterning an oxidation layer on a substrate, then applying a lateral-growth technology to form a buffer layer on the oxidation...
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6750470 |
Robust field emitter array design
There is provided a field emitter device formed over a semiconductor substrate. The field emitter device includes at least one field emitter tip disposed over the substrate, and a conducting gate...
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