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6878959 |
Group III-V semiconductor devices including semiconductor materials made by spatially-selective intermixing of atoms on the group V sublattice
The group III-V semiconductor device comprises a quantum well layer, barrier layers sandwiching the quantum well layer and a region of a third semiconductor material formed by spatially-selective...
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6879306 |
Scanned display systems using color laser light sources
A display system for providing a user viewable visible color image includes a display for receiving color laser light so that the display, in response to color laser light, produces a viewable...
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6878563 |
Radiation-emitting semiconductor element and method for producing the same
This invention describes a radiation-emitting semiconductor component based on GaN, whose semiconductor body is made up of a stack of different GaN semiconductor layers ( 1 ). The semiconductor...
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6875629 |
III group nitride based semiconductor element and method for manufacture thereof
A separator layer of Ti is formed on an auxiliary substrate of sapphire or the like. An undercoat layer of TiN is formed on the separator layer. The undercoat layer is provided so that a Group III...
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6875627 |
Structure and method for index-guided buried heterostructure AlGaInN laser diodes
An index-guided buried heterostructure AlGalnN laser diode provides improved mode stability and low threshold current when compared to conventional ridge waveguide structures. A short period...
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6872584 |
Solid state image sensor and method for fabricating the same
In a solid state image sensor having micro lenses, the micro lens and a bonding pad electrode are formed on a planarizing layer. Thus, it is no longer necessary to etch the planarizing layer for...
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6869814 |
Silicon-based ultra-violet LED
A light emitting diode (LED), and a method for producing the same. The LED includes a substrate that may be made of silicon, a first conductive layer on one side, and a porous insulating layer on...
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6870194 |
Method of generating optical radiation, and optical radiation source
An apparatus and a method are provided for generating an optical pulse by using a current pulse. The arrangement is based on a specific semiconductor structure, where a carrier injector is...
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6869806 |
Method and apparatus for the production of a semiconductor compatible ferromagnetic film
Films of gallium manganese nitride are grown on a substrate by molecular beam epitaxy using solid source gallium and manganese and a nitrogen plasma. Hydrogen added to the plasma provides improved...
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6869812 |
High power AllnGaN based multi-chip light emitting diode
A light emitting diode chip having a substantially transparent substrate and having an aspect ratio which defines an elongated geometry provides enhanced efficiency and brightness. Method for...
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6869813 |
Chip-type LED and process of manufacturing the same
A chip-type LED including a LED element and a tubular vessel accommodating the LED element therein, wherein the vessel has an upper opening and a lower opening, the LED element is positioned...
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6864110 |
Electrophoretic processes for the selective deposition of materials on a semiconducting device
The present invention provides a process and apparatus for selectively depositing materials on a semiconductor device, such as depositing phosphors or other optical materials on a light emitting...
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6864111 |
Column-row addressable electric microswitch arrays and sensor matrices employing them
The present invention relates generally to fabricating two-terminal electric microswitches comprising thin semiconductor films and using these microswitches to construct column-row (x-y)...
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6865201 |
Semiconductor laser device, method of fabricating the same and optical information reproduction apparatus
In connection with a nitride semiconductor laser device optimal for example for optical pickup and an optical information reproduction apparatus having superior condensation characteristics, the...
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6864190 |
Laser chemical fabrication of nanostructures
Disclosed is a process for fabricating luminescent porous material, the process comprising pre-treating a substrate (e.g. crystalline silicon) with laser radiation (e.g from a Nd:YAG laser) in a...
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6861270 |
Method for manufacturing gallium nitride compound semiconductor and light emitting element
A method for manufacturing a GaN compound semiconductor which can improve light emitting efficiency even when dislocations are present. An n type AlGaN layer, a undoped AlGaN layer, and a p type...
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6861271 |
Forming indium nitride (InN) and indium gallium nitride (InGaN) quantum dots grown by metal-organic-vapor-phase-epitaxy (MOCVD)
Indium Nitride (InN) and Indium-rich Indium Gallium Nitride (InGaN) quantum dots embedded in single and multiple In x Ga 1-x N/In y Ga 1-y N quantum wells (QWs) are formed by using TMIn and/or...
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6862312 |
Quantum dot tunable external cavity laser (QD-TEC laser)
A laser system includes a laser diode with a low dimensional nanostructure, such as quantum dots or quantum wires, for emitting light over a wide range of wavelengths. An external cavity is used to...
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6861273 |
Method of fabricating reflection-mode EUV diffusers
Techniques for fabricating well-controlled, random relief, engineered surfaces that serve as substrates for EUV optical devices are accomplished with grayscale exposure. The method of fabricating a...
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6861277 |
Method of forming MEMS device
A method of forming a MEMS device includes depositing a conductive material on a substructure, forming a first sacrificial layer over the conductive material, including forming a substantially...
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6859476 |
Surface-emitting semiconductor laser and method of manufacturing the same
A surface-emitting semiconductor laser having a light-emitting region and a non-light-emitting region, the light-emitting region emitting light in a direction perpendicular to a semiconductor...
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6858875 |
Light-emitting-element array
A light-emitting-element array has a semiconductor layer formed on a current-blocking layer. Light-emitting elements are formed in the semiconductor layer by diffusion of an impurity of a different...
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6855571 |
Method of producing GaN-based semiconductor laser device and semiconductor substrate used therefor
The present invention provides a method for fabricating a GaN-based semiconductor laser device comprising the steps of forming a GaN-based semiconductor layer 102 on a substrate 101 ; forming,...
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6855481 |
Apparatus and a method for forming a pattern using a crystal structure of material
The present invention relates generally to an apparatus and a method for forming a pattern, and in particular, to an apparatus and a method for forming a pattern for the formation of quantum dots...
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6853042 |
Hybrid optical element and photodetector device
The present invention concerns a hybrid optical element including at least one optical element ( 2 ) attached to one surface of a substrate ( 1 ), a semiconductor laser ( 3 ) and a photodetector (...
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6853793 |
Attenuator having reduced optical loss in the pass mode
An optical device includes a ridge waveguide defined by a ridge extending from a slab of a light transmitting medium. The optical device also includes trenches extending into the slab of light...
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6852554 |
Emission layer formed by rapid thermal formation process
An emitter has a rapid thermal process (RTP) formed emission layer of SiO 2 , SiO x N y or combinations thereof. The emission layer formed by rapid thermal processing does not require...
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6852555 |
Method in the fabrication of organic thin-film semiconducting devices
In a method in the fabrication of an organic thin-film semiconducting device comprising an electrode arrangement with electrodes contacting a semiconducting organic material, an anode in the...
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6853008 |
Semiconductor device and manufacturing method thereof
A semiconductor device has a structure in which a GaAs substrate and an InP substrate, different in lattice constant, are bonded to each other. An amorphous layer made of constituent atoms of the...
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6849861 |
Electronic device and electronic apparatus
Performance of an electronic device is highly improved by epitaxially growing a perovskite-type oxide thin film on an inorganic amorphous layer or an organic solid layer in a desired direction; and...
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6849472 |
Nitride semiconductor device with reduced polarization fields
A method for fabricating a light-emitting semiconductor device including a III-Nitride quantum well layer includes selecting a facet orientation of the quantum well layer to control a field...
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6849473 |
Semiconductor light-emitting device and method for manufacturing thereof
In a semiconductor light-emitting device, on an n-GaAs substrate are stacked an n-GaAs buffer layer, an n-cladding layer, an undoped active layer, a p-cladding layer, a p-intermediate band gap...
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6846686 |
Semiconductor light-emitting device and method of manufacturing the same
A semiconductor light-emitting device, including a first substrate of a first conductivity type, a first bonding layer provided on the first substrate and consisting essentially of a GaP material...
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6846722 |
Method for isolating a hybrid device in an image sensor
The present disclosure relates to a method for fabricating an image sensor capable of improving dark current characteristics. The method includes: forming sequentially a pad oxide layer and a pad...
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6846687 |
Process of packaging organic electroluminescent panel
A process of packaging an OEL panel is disclosed. A printed circuit board is provided, wherein the printed circuit board comprises a plurality of bonding pads and a plurality of bumps on the...
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6846685 |
Vertical-cavity surface-emitting semiconductor laser
A vertical-cavity surface-emitting semiconductor laser has a substrate, a lower DBR structure portion having a plurality of layers provided on the substrate, a semiconductor buried structure...
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6844215 |
Method of forming tapered drain-to-anode connectors in a back plane for an active matrix OLED device
A method is disclosed of forming tapered drain-to-anode connectors in a back plane of an active matrix OLED device. The method is also used in forming laterally spaced anode layers in contact with...
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6844572 |
Light emitting semiconductor device and method of fabricating the same
A light emitting semiconductor device includes a silicon substrate and a compound semiconductor layer disposed on a main plane of the silicon substrate and represented by a general expression In x...
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6844210 |
Organic electroluminescence device and method of manufacturing same
A method of manufacturing an organic electroluminescence device containing an organic layer formed between electrodes, at least one of which is a transparent electrode, the method including a step...
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6841801 |
Mask for correcting optical proximity effect
A mask corrects for an optical proximity effect (OPE). A dummy pattern having a phase-edge effect is formed on a mask substrate. The phase-edge effect reduces the intensity of light boundary of two...
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6841407 |
Method for aperturing vertical-cavity surface-emitting lasers (VCSELs)
A method for aperturing a vertical-cavity surface-emitting laser (VCSEL), for increasing the external quantum efficiency and decreasing the threshold current, involves an etching mixture that is...
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6835950 |
Organic electronic devices with pressure sensitive adhesive layer
An organic electronic device structure, according to a first aspect of the invention, includes: (a) a substrate layer; (b) an organic electronic region disposed over the substrate layer; (c) a...
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6835581 |
Method of coating optical device facets with dielectric layer and device made therefrom
A method of simultaneously depositing dielectric layers on both facets of an optical device and devices made therefrom. The steps of the method are selecting a substrate; forming an optical device...
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6833282 |
Method of forming an optical sensor device having a composite sandwich structure of alternating titanium and titanium nitride layers
In order to make a charge couple device including an interconnect layer to contact active areas, a first layer of a first titanium nitride layer on the active areas, and then a series of...
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6830944 |
Piezoelectric bimorphs as microelectromechanical building blocks and constructions made using same
A plurality of MEMS devices that can be easily configured to impart extended ranges of rotational and/or translational motion. The MEMS devices comprise a micro-electromechanical building block...
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6831306 |
Extended length light emitting diode
An extended length light emitting diode suitable for auto-insertion including an extended LED body region serving as a standoff or spacer to provide supported spacing from a circuit board to extend...
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6830949 |
Method for producing group-III nitride compound semiconductor device
A preferred condition for forming a Group III nitride compound semiconductor layer on a substrate by a sputtering method is proposed. When a first Group III nitride compound semiconductor layer is...
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6831304 |
P-n junction type boron phosphide-based semiconductor light-emitting device and production method thereof
A pn-junction-type semiconductor light-emitting device having a single-crystal silicon (Si) substrate of first conduction type; a first boron-phosphide-based semiconductor layer of first conduction...
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6831300 |
Semiconductor light emitting device, manufacturing method of a semiconductor light emitting device and connection structure of an electrode layer
In a semiconductor light emitting device configured to extract light through a substrate thereof, an electrode layer is formed on a p-type semiconductor layer (such as p-type GaN layer) formed on...
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6830945 |
Method for fabricating a non-planar nitride-based heterostructure field effect transistor
A method for fabricating a non-planar heterostructure field effect transistor using group III-nitride materials with consistent repeatable results is disclosed. The method provides a substrate on...
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