Matches 1 - 50 out of 324 1 2 3 4 5 6 7 >
Match Document Document Title
7635628 Nonvolatile memory device and method of manufacturing the same  
The nonvolatile memory device includes a semiconductor substrate on which a source, a drain, and a channel region are formed, a tunneling oxide film formed on the channel region, a floating gate...
7635633 Non-volatile memory device and method of manufacturing the same  
In a non-volatile memory device and a method of manufacturing the non-volatile memory device, a tunnel insulating layer, a charge trapping layer, a dielectric layer and a conductive layer may be...
7632731 Semiconductor device and method for fabricating the same  
A method of fabricating a semiconductor device consistent with the present invention, the method comprising: forming an insulation film on a substrate; forming a mono-atomic layer of barrier ions...
7629641 Band engineered nano-crystal non-volatile memory device utilizing enhanced gate injection  
Non-volatile memory devices and arrays are described that utilize reverse mode non-volatile memory cells that have band engineered gate-stacks and nano-crystal charge trapping in EEPROM and block...
7629243 Method for manufacturing semiconductor device  
A method for manufacturing a semiconductor device is provided, which includes forming a gate insulating film on a semiconductor substrate, forming a first layer on the gate insulating film, the...
7615438 Lanthanide yttrium aluminum oxide dielectric films  
Electronic apparatus and methods of forming the electronic apparatus include a lanthanide yttrium aluminum oxide dielectric film on a substrate for use in a variety of electronic systems. The...
7605067 Method of manufacturing non-volatile memory device  
A method of manufacturing a non-volatile memory device includes forming a tunnel insulating layer on a substrate, forming a conductive pattern on the tunnel insulating layer, forming a lower...
7602009 Erasable non-volatile memory device using hole trapping in high-K dielectrics  
A non-volatile memory is described having memory cells with a gate dielectric. The gate dielectric is a multilayer charge trapping dielectric between a control gate and a channel region of a...
7601578 Defect control in gate dielectrics  
A method for improving high-κ gate dielectric film ( 104 ) properties. The high-κ film ( 104 ) is subjected to a two step anneal sequence. The first anneal is performed in a reducing ambient (...
7602012 Semiconductor memory devices with charge traps  
A memory cell in a semiconductor memory device has a pair of charge traps formed on opposite sides of a control electrode, above variable resistance regions in the semiconductor substrate. Each...
7592666 Semiconductor memory  
A semiconductor memory having an electrically writable/erasable memory cell includes a first gate insulating layer made from a compound containing silicon and oxygen; a first charge-storage layer...
7588989 Dielectric multilayer structures of microelectronic devices and methods for fabricating the same  
A dielectric multilayer structure of a microelectronic device, in which a leakage current characteristic and a dielectric constant are improved, is provided in an embodiment. The dielectric...
7579231 Semiconductor device and method of manufacturing the same  
Disclosed is a method of manufacturing a semiconductor device, comprising forming a metal compound film directly or indirectly on a semiconductor substrate, forming a metal-containing insulating...
7572735 Blanket resist to protect active side of semiconductor  
Yield loss in semiconductor processing is mitigated by forming a resist over an active side of a semiconductor workpiece or wafer, as well as around the edge of the wafer. The resist mitigates the...
7566608 Methods of forming thin layers including zirconium hafnium oxide and methods of forming gate structures, capacitors, and flash memory devices using the same  
Methods of forming a zirconium hafnium oxide thin layer on a semiconductor substrate by supplying tetrakis(ethylmethylamino)zirconium ([Zr{N(C 2 H 5 )(CH 3 )} 4 ], TEMAZ) and...
7566667 Methods of fabricating a semiconductor device having a barrier metal layer and devices formed thereby  
A semiconductor device is formed by forming a gate region, including a gate oxide layer, and impurity diffusion regions on a semiconductor substrate, forming a barrier metal layer on the gate...
7566604 Method of fabricating a dual-gate structure that prevents cut-through and lowered mobility  
A method of fabricating a dual-gate semiconductor device, including forming a first PMOS transistor on a semiconductor substrate, the first PMOS transistor having a first gate electrode and a first...
7564114 Semiconductor devices and methods of manufacture thereof  
Semiconductor devices and methods of manufacture thereof are disclosed. A preferred embodiment comprises a method of forming an insulating material layer. The method includes forming an interface...
7550802 Nonvolatile semiconductor memory device and manufacturing process of the same  
A nonvolatile semiconductor memory device which can shorten data writing and erasing time, significantly improve the endurance characteristic and be activated with low power consumption includes an...
7544559 Methods of forming semiconductor constructions  
The invention includes methods of forming PMOS transistors and NMOS transistors. The NMOS transistors can be formed to have a thin silicon-containing material between a pair of metal nitride...
7541242 NROM memory cell, memory array, related devices and methods  
An array of memory cells configured to store at least one bit per one F 2 includes substantially vertical structures providing an electronic memory function spaced apart a distance equal to one...
7531399 Semiconductor devices and methods with bilayer dielectrics  
A semiconductor device is disclosed that includes: a substrate; a first high-k dielectric layer; a second high-k dielectric layer formed of a different high-k material; and a metal gate. In another...
7531405 Method of manufacturing a dielectric layer and corresponding semiconductor device  
A polycrystalline dielectric layer is formed wherein the dielectric layer comprises a first dielectric material containing an oxide or nitride and a second material contributing to less than 1% in...
7531404 Semiconductor device having a metal gate electrode formed on an annealed high-k gate dielectric layer  
A method of forming a transistor gate stack having an annealed gate dielectric layer begins by providing a substrate that includes a first and second spacer separated by a trench. A conformal...
7528044 CMOSFET with hybrid-strained channels  
Disclosed is a method of manufacturing microelectronic devices including forming a silicon substrate with first and second wells of different dopant characteristics, forming a first strained...
7521359 Interconnect structure encased with high and low k interlevel dielectrics  
A structure for improving the electrostatic discharge robustness of an integrated circuit having an electrostatic discharge (ESD) device and a receiver network connected to a pad by interconnects....
7521345 High-temperature stable gate structure with metallic electrode  
The present invention provides a method for depositing a dielectric stack comprising forming a dielectric layer atop a substrate, the dielectric layer comprising at least oxygen and silicon atoms;...
7521325 Semiconductor device and method for fabricating the same  
A permeation preventing film of a silicon nitride film 16 is inserted between a silicon substrate 10 and a High-k gate insulation film 18 to thereby prevent the High-k gate insulation film ...
7518181 Semiconductor memory device and methods of manufacturing and operating the same  
A semiconductor memory device and methods of manufacturing and operating the same may be provided. The semiconductor memory device may include a substrate, at least a pair of fins protruding from...
7511326 ALD of amorphous lanthanide doped TiOx films  
The use of atomic layer deposition (ALD) to form an amorphous dielectric layer of titanium oxide (TiO x ) doped with lanthanide elements, such as samarium, europium, gadolinium, holmium, erbium and...
7510943 Semiconductor devices and methods of manufacture thereof  
A first gate dielectric of a first transistor is disposed over a workpiece in a first region, and a second gate dielectric of a second transistor is disposed over the workpiece in a second region....
7507611 Thin film transistor and method for manufacturing the same  
A method for manufacturing a thin film transistor includes forming a gate oxide film on a substrate, forming a first nitride layer on the gate oxide film, forming a polysilicon layer on the first...
7507652 Methods of forming a composite dielectric structure and methods of manufacturing a semiconductor device including a composite dielectric structure  
Some methods that are provided form a composite dielectric structure on a substrate. A first dielectric layer that includes metal and oxygen is formed on a substrate. A preliminary dielectric layer...
7494879 Method for forming a gate insulating layer of a semiconductor device  
Embodiments relate to a method for forming a gate insulating layer, which may include forming a device isolation layer being divided into a device active region and a device isolation region,...
7488640 Aluminum nitride and aluminum oxide/aluminum nitride heterostructure gate dielectric stack based field effect transistors and method for forming same  
A structure (e.g., field effect transistor) and a method for making the structure, include a substrate having a source region, a drain region, and a channel region therebetween, an insulating layer...
7482223 Multi-thickness dielectric for semiconductor memory  
A process provides a gate dielectric layer of a first thickness for a memory array and for certain peripheral circuits on the same substrate as the memory array. High-voltage peripheral circuits...
7482623 Organic semiconductor film and organic semiconductor device  
An organic semiconductor device includes a substrate, a gate electrode formed directly on the substrate , gate insulating film formed directly on the gate electrode, a source electrode and a drain...
7482206 Semiconductor devices having nano-line channels and methods of fabricating the same  
A semiconductor device includes a substrate, a gate electrode on the substrate and source and drain electrodes disposed at respective sides of the gate electrode. The device further includes a...
7479425 Method for forming high-K charge storage device  
Structures and methods of fabricating of a floating gate non-volatile memory device. In a first example embodiment, We form a bottom tunnel layer comprised of a lower oxide tunnel layer and a upper...
7473640 Reactive gate electrode conductive barrier  
A method, and corresponding transistor structure are provided for protecting the gate electrode from an underlying gate insulator. The method comprises: forming a gate insulator overlying a channel...
7473591 Transistor with strain-inducing structure in channel  
Various methods for forming a layer of strained silicon in a channel region of a device and devices constructed according to the disclosed methods. In one embodiment, a strain-inducing layer is...
7462532 Method of fabricating high voltage metal oxide semiconductor device  
A high voltage metal oxide semiconductor device comprising a substrate, an N-type epitaxial layer, an isolation structure, a gate dielectric layer, a gate, an N-type drain region, a P-type well, an...
7462533 Memory cell and method for fabricating same  
A method for fabricating a memory cell includes forming a stacked insulating layer, and a lower conductive layer on a semiconductor substrate, patterning the lower conductive layer and the...
7452767 Selective implementation of barrier layers to achieve threshold voltage control in CMOS device fabrication with high k dielectrics  
A method of forming a CMOS structure, and the device produced therefrom, having improved threshold voltage and flatband voltage stability. The inventive method includes the steps of providing a...
7435640 Method of fabricating gate structure  
A method of fabricating a gate structure is provided. First, a sacrificial oxide layer is formed on a substrate. A nitridation treatment process is performed to redistribute the nitrogen atoms in...
7436036 PMOS transistor of semiconductor device, semiconductor device comprising the same, and method for manufacturing the same  
A PMOS transistor of a semiconductor device exhibiting improved characteristics, a semiconductor device incorporating the same, and a method for manufacturing the semiconductor device. The PMOS...
7432216 Semiconductor device and manufacturing method thereof  
The technique capable of reducing the power consumption in the MISFET by suppressing the scattering of the carriers due to the fixed charges is provided. A silicon oxynitride film with a physical...
7432147 Method of manufacturing semiconductor device  
A method of manufacturing a semiconductor device comprises: forming a device isolation, a first conductivity type region, and a second conductivity type region on a semiconductor substrate;...
7432139 Methods for forming dielectrics and metal electrodes  
A method for forming a semiconductor structure, the method including forming in a processing chamber a dielectric layer over a substrate; and subsequently forming, in the same processing chamber...
7429506 Process of making a III-V compound semiconductor heterostructure MOSFET  
A method of forming a compound semiconductor device comprises forming a gate insulator layer overlying a compound semiconductor substrate, defining an active device region within the compound...
Matches 1 - 50 out of 324 1 2 3 4 5 6 7 >