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7588973 Semiconductor device and method of manufacturing the same  
In a semiconductor device having a semiconductor element having a plurality of SOI-Si layers, the height of element isolation regions from the surface of the semiconductor substrate are...
7582502 Method for manufacturing back side illumination image sensor  
Provided are methods for manufacturing a back side illumination image sensor. In one method, an ion implantation layer is formed in an entire region of a front side of a first substrate. A device...
7562327 Mask layout design improvement in gate width direction  
In a cell comprising an N well and a P well, a distance SP 04 from a center line of a contact N-type region to an N well end of the N well is set to be a distance which causes a transistor not to...
7550344 Semiconductor device and method for fabricating the same  
A semiconductor device includes: a lower hydrogen-barrier film; a capacitor formed on the lower hydrogen-barrier film and including a lower electrode, a capacitive insulating film, and an upper...
7550340 Silicon rich barrier layers for integrated circuit devices  
Semiconductor devices and memory cells are formed using silicon rich barrier layers to prevent diffusion of dopants from differently doped polysilicon films to overlying conductive layers or to...
7534680 Bipolar transistor, BiCMOS device, and method for fabricating thereof  
Provided are bipolar transistor, BiCMOS device and method of fabricating thereof, in which an existing sub-collector disposed beneath a collector of a SiGe HBT is removed and a collector plug...
7517748 Method of fabricating trench-constrained isolation diffusion for semiconductor devices  
A semiconductor substrate includes a pair of trenches filled with a dielectric material. Dopant introduced into the mesa between the trenches is limited from diffusing laterally when the substrate...
7507626 Floating gate of flash memory device and method of forming the same  
Disclosed is a floating gate of a flash memory device, wherein a tunneling oxide layer is formed on a semiconductor substrate, and a floating gate is formed in the shape of a lens having a convex...
7465636 Methods for forming semiconductor wires and resulting devices  
Methods for forming a wire from silicon or other semiconductor material are disclosed. Also disclosed are various devices including such a semiconductor wire. According to one embodiment, a wire is...
7465622 Method for making a raised vertical channel transistor device  
A method for fabricating a vertical channel transistor device is provided. An opening is formed in a dielectric stack comprised of a pad nitride layer and a pad oxide layer. A plurality of...
7456061 Method to reduce boron penetration in a SiGe bipolar device  
The invention, in one aspect, provides a method of manufacturing a semiconductor device. This aspect includes forming gate electrodes in a non-bipolar transistor region of a semiconductor...
7449380 Method of fabricating isolated semiconductor devices in epi-less substrate  
An structure for electrically isolating a semiconductor device is formed by implanting dopant into a semiconductor substrate that does not include an epitaxial layer. Following the implant the...
7396715 Semiconductor device and manufacturing method of the same  
Patterning is performed in such a manner that an end portion fabricated of a second gate insulating film partially overlaps an end portion fabricated of a first gate insulating film. Then, a...
7358573 Triple-well CMOS devices with increased latch-up immunity and methods of fabricating same  
A triple-well CMOS structure having reduced latch-up susceptibility and a method of fabricating the structure. The method includes forming a buried P-type doped layer having low resistance under...
7354812 Multiple-depth STI trenches in integrated circuit fabrication  
Multiple trench depths within an integrated circuit device are formed by first forming trenches in a substrate to a first depth, but of varying widths. Formation of a dielectric layer can cause...
7306959 Methods of fabricating integrated optoelectronic devices  
This disclosure concerns methods for fabrication of integrated high speed optoelectronic devices. In one example of such a method, a device region that includes a top surface and a bottom surface...
7297584 Methods of fabricating semiconductor devices having a dual stress liner  
In a semiconductor device having a dual stress liner for improving electron mobility, the dual stress liner includes a first liner portion formed on a PMOSFET and a second liner portion formed on...
7282402 Method of making a dual strained channel semiconductor device  
According to the embodiments to the present disclosure, the process of making a dual strained channel semiconductor device includes integrating strained Si and compressed SiGe with trench isolation...
7247534 Silicon device on Si:C-OI and SGOI and method of manufacture  
A semiconductor structure and method of manufacturing is provided. The method of manufacturing includes forming shallow trench isolation (STI) in a substrate and providing a first material and a...
7202125 Low-voltage, multiple thin-gate oxide and low-resistance gate electrode  
A method of making a memory array and peripheral circuits together on a single substrate forms a dielectric layer, floating gate layer, inter-layer dielectric and mask layer across all regions of...
7183154 Nonvolatile memory cells having split gate structure and methods of fabricating the same  
Nonvolatile memory cells having a split gate structure and methods of fabricating the same are provided. The nonvolatile memory cells include active regions defined at a predetermined region of a...
7172914 Method of making uniform oxide layer  
A method of forming a semiconductor structure includes forming an isolation region in a semiconductor substrate. A first oxide layer is on the substrate, a first sacrificial layer is on the first...
7105397 Semiconductor device and method of fabricating the same  
According to the present invention, there is a provided a semiconductor device fabrication method having, forming a mask material in a surface portion of a semiconductor substrate, and forming a...
7098095 Method of forming a MOS transistor with a layer of silicon germanium carbon  
The vertical diffusion of dopants from the gate into the channel region, and the lateral diffusion of dopants from the source and drain regions into the channel region resulting from thermal...
7075149 Semiconductor device and its manufacturing method  
A semiconductor device comprises: a semiconductor layer of a first conductivity type; a first semiconductor pillar layer of the first conductivity type; a second semiconductor pillar layer of a...
7071049 Silicon rich barrier layers for integrated circuit devices  
Semiconductor devices and memory cells are formed using silicon rich barrier layers to prevent diffusion of dopants from differently doped polysilicon films to overlying conductive layers or to...
7037768 Methods of etching intermediate silicon germanium layers using ion implantation to promote selectivity  
An integrated circuit device structure can be formed by forming an implant mask having a window therein on a structure including upper and lower Si layers and an intermediate SiGe x layer...
7018884 Method for a parallel production of an MOS transistor and a bipolar transistor  
The present invention provides a method for parallel production of an MOS transistor in an MOS area of a substrate and a bipolar transistor in a bipolar area of the substrate. The method comprises...
6977417 Semiconductor device and method of fabricating the same  
An impurity-diffused layer having an extension structure is formed first by implanting Sb ion as an impurity for forming a pocket region; then by implanting N as a diffusion-suppressive substance...
6974999 Semiconductor device and method of manufacturing the same  
It is an object to suppress a change in a characteristic of a semiconductor device with a removal of a hard mask while making the most of an advantage of a gate electrode formed by using the hard...
6964894 Apparatus and method of forming a device layer  
A method of forming a MEMS device produces a device layer wafer having a pre-formed conductive pathway before coupling it with a handle wafer. To that end, the method produces the noted device...
6955957 Method of forming a floating gate in a flash memory device  
Disclosed is a method of forming the floating gate in the flash memory device. After the first polysilicon film is deposited on the semiconductor substrate, the trench is formed on the first...
6940145 Termination structure for a semiconductor device  
A semiconductor device (e.g. MOSFET or IGBT) comprises active and termination regions ( 1,2 ) formed in a semiconductor substrate ( 4 ). The substrate ( 4 ) has an upper surface and a termination...
6927459 Semiconductor device having a gate electrode with a sidewall insulating film and manufacturing method thereof  
A gate electrode is provided via a gate insulating film formed between the source and drain regions on a semiconductor substrate, wherein the sidewall of the gate electrode excluding the exposed...
6924187 Method of making a semiconductor device with dummy diffused layers  
A semiconductor device, including a dummy diffused layer in the upper part of a substrate, has its noise immunity improved. The dummy diffused layer is formed between analog and digital blocks to...
6921688 Method of and apparatus for integrating flash EPROM and SRAM cells on a common substrate  
A system for and a method of integrating SRAM cells and flash EPROM cells onto a single silicon substrate includes an area on the silicon substrate where a local oxidation of silicon (LOCOS)...
6914308 Vertical PNP bipolar transistor  
A semiconductor device in which a vertical pnp-bipolar transistor is formed in a prescribed element region on a semiconductor substrate includes: a buried n + -layer of a high concentration formed...
6869838 Deposition of passivation layers for active matrix liquid crystal display (AMLCD) applications  
A method of passivation layer deposition using a cyclical deposition process is described. The cyclical deposition process may comprise alternately adsorbing a silicon-containing precursor and a...
6864133 Device, method of manufacturing device, electro-optic device, and electronic equipment  
A device comprising a semiconductor film ( 12 ) formed on a substrate ( 11 ), a gate region ( 15 ), in which a gate insulating film ( 13 ) formed on the semiconductor film and a gate electrode film...
6858486 Vertical bipolar transistor formed using CMOS processes  
A vertical bipolar transistor is described which utilizes ion implantation steps which are used to form an nMOS field effect device and a pMOS field effect device. The implantation steps form an...
6852585 Semiconductor circuit arrangement and a method for producing same  
A semiconductor circuit arrangement includes a circuit element embedded in a semiconductor substrate of a first conductivity type in an integrated manner and is provided with at least one gate...
6830977 METHODS OF FORMING AN ISOLATION TRENCH IN A SEMICONDUCTOR, METHODS OF FORMING AN ISOLATION TRENCH IN A SURFACE OF A SILICON WAFER, METHODS OF FORMING AN ISOLATION TRENCH-ISOLATED TRANSISTOR, TRENCH-ISOLATED TRANSISTOR, TRENCH ISOLATION STRUCTURES FORMED IN A SEMICONDUCTOR, MEMORY CELLS AND DRAMS  
A method of forming an isolation trench in a semiconductor includes forming a first isolation trench portion having a first depth and having a first sidewall intersecting a surface of the...
6825074 Method of manufacturing a silicon-on-insulator (SOI) semiconductor device  
A silicon-on-insulator (SOI) substrate is provided which includes a silicon substrate having an upper surface, a first insulating layer having a lower surface extending horizontally over the upper...
6815794 Semiconductor devices with multiple isolation structure and methods for fabricating the same  
Semiconductor devices with a multiple isolation structure and methods for fabricating the same are provided. In one aspect, a semiconductor device comprises a heavily doped buried layer having a...
6815282 Silicon on insulator field effect transistor having shared body contact  
Silicon on insulator (SOI) field effect transistors (FET) with a shared body contact, a SRAM cell and array including the SOI FETs and the method of forming the SOI FETs. The SRAM cell has a hybrid...
6800518 Formation of patterned silicon-on-insulator (SOI)/silicon-on-nothing (SON) composite structure by porous Si engineering  
A patterned SOI/SON composite structure and methods of forming the same are provided. In the SOI/SON composite structure, the patterned SOI/SON structures are sandwiched between a Si over-layer and...
6784065 Bipolar transistor with ultra small self-aligned polysilicon emitter and method of forming the transistor  
A low-power bipolar transistor is formed to have an intrinsic emitter region with a sub-lithographic width, and an oxide layer that is self aligned to an overlying extrinsic emitter. The small...
6784042 Integration process on a SOI substrate of a semiconductor device comprising at least a dielectrically isolated well  
An integration process in a SOI substrate of a semiconductor device having at least a dielectrically insulated well, the process including: an oxidizing step directed to form an oxide layer; a...
6780695 BiCMOS integration scheme with raised extrinsic base  
A method of forming a BiCMOS integrated circuit having a raised extrinsic base is provided. The method includes first forming a polysilicon layer atop a surface of a gate dielectric which is...
6777772 Semiconductor device having improved trench structure  
Trenches for defining chip areas are formed on the surface of a semiconductor substrate so that outlines of side walls of each of the trenches have recesses or protrusions. Then, a sputtering film...
Matches 1 - 50 out of 229 1 2 3 4 5 >