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7615437 Non-volatile memory device and method of manufacturing the same  
A method of manufacturing a non-volatile memory device includes sequentially depositing a first insulation layer, a charge storage layer, and a second insulation layer on a substrate, forming a...
7615436 Two mask floating gate EEPROM and method of making  
There is provided a floating gate transistor, such as an EEPROM transistor, and method of making the transistor using two masking steps. The method of making a transistor includes patterning a...
7612401 Non-volatile memory cell  
A semiconductor device comprises a semiconductor substrate, and a non-volatile memory cell provided on the semiconductor substrate, the non-volatile memory cell comprising a tunnel insulating film...
7611941 Method for manufacturing a memory cell arrangement  
In an embodiment of the invention, a method for manufacturing a memory cell arrangement includes forming a charge storing memory cell layer stack over a substrate; forming first and second select...
7605430 Nonvolatile memory devices having a fin shaped active region and methods of fabricating the same  
A nonvolatile memory device includes a semiconductor substrate and a device isolation layer on the semiconductor substrate. A fin-shaped active region is formed between portions of the device...
7601581 Method of manufacturing a semiconductor device  
Provided is a manufacturing method of a semiconductor device, which comprises forming a film stack of a gate insulating film, a charge storage film, insulating film, polysilicon film, silicon oxide...
7598561 NOR flash memory  
Semiconductor memory array and process of fabrication in which a plurality of bit line diffusions are formed in a substrate, and memory cells formed in pairs between the bit line diffusions, with...
7598141 Method of fabricating static random access memory  
A method of fabricating a static random access memory device includes selectively removing an insulating film and growing a single crystalline silicon layer using selective epitaxy growth, the...
7598136 Image sensor and related fabrication method  
An image sensor comprising a transfer gate electrode having a uniform impurity doping distribution is provided. The image sensor further comprises a semiconductor substrate comprising a pixel area,...
7595522 Nonvolatile semiconductor memory  
According to the invention, there is provided a nonvolatile semiconductor memory having: a floating gate electrode formed on a gate insulating film on an element region isolated by an...
7589371 Semiconductor device and fabrication method therefor  
The present invention provides semiconductor device and a fabrication method therefor. The semiconductor device includes trenches ( 11 ) formed in a semiconductor substrate ( 10 ), first ONO films...
7588986 Method of manufacturing a semiconductor device  
According to an exemplary embodiment of the present invention, a method of manufacturing a semiconductor device having active regions including a SONOS device region, a high voltage device region,...
7588983 EEPROM cell and EEPROM device with high integration and low source resistance and method of manufacturing the same  
Provided are an EEPROM cell, an EEPROM device, and methods of manufacturing the EEPROM cell and the EEPROM device. The EEPROM cell is formed on a substrate including a first region and a second...
7588979 Method of manufacturing a semiconductor integrated circuit using a selective disposable spacer technique and semiconductor integrated circuit manufactured thereby  
Methods of manufacturing a semiconductor integrated circuit using selective disposable spacer technology and semiconductor integrated circuits manufactured thereby. The method includes providing a...
7586144 Memory device with high dielectric constant gate dielectrics and metal floating gates  
A memory cell transistor includes a high dielectric constant tunnel insulator, a metal floating gate, and a high dielectric constant inter-gate insulator comprising a metal oxide formed over a...
7585726 Nonvolatile semiconductor memory devices and the fabrication process of them  
The present invention enables to avoid a reduction in coupling ratio in a nonvolatile semiconductor memory device. The reduction is coupling ratio is caused due to difficulties in batch forming of...
7572724 Doped single crystal silicon silicided eFuse  
An eFuse begins with a single crystal silicon-on-insulator (SOI) structure that has a single crystal silicon layer on a first insulator layer. The single crystal silicon layer is patterned into a...
7564094 Non-volatile memory devices and methods of manufacturing the same  
Non-volatile memory devices include a tunnel insulating layer on a channel region of a substrate, a charge-trapping layer pattern on the tunnel insulating layer and a first blocking layer pattern...
7564090 Transistor of a semiconductor device  
Disclosed are a semiconductor device and a method of manufacturing the same. According to the present invention, the transistor of the semiconductor device comprises a stack type gate in which a...
7563674 Method of manufacturing NAND flash memory device  
A method of manufacturing a NAND flash memory device, wherein isolation layers are formed in a semiconductor substrate, and an upper side of each of the isolation layers is made to have a negative...
7563664 Semiconductor memory device equipped with memory transistor and peripheral transistor and method of manufacturing the same  
A semiconductor memory device provided with a memory cell region having first gate electrodes and a peripheral circuit region having second gate electrodes includes first gate electrodes arranged a...
7563662 Processes for forming electronic devices including non-volatile memory  
A process for forming an electronic device can be performed, such that as little as one gate electric layer may be formed within each region of the electronic device. In one embodiment, the...
7557402 High write and erase efficiency embedded flash cell  
An embedded flash cell structure comprising a structure, a first floating gate having an exposed side wall over the structure, a second floating gate having an exposed side wall over the structure...
7557042 Method for making a semiconductor device with reduced spacing  
Floating gates are formed in two separate polysilicon depositions steps resulting in distinct portions. The first formed portions are between isolation regions. A thick insulator is formed over the...
7557004 Method for fabricating semiconductor device  
The method for fabricating the semiconductor device includes the steps of: forming an insulating film 20 , a conductive film 22 and an insulating film 24 over a semiconductor substrate 10 ...
7556999 Method for fabricating non-volatile memory  
A method for fabrication a memory having a memory area and a peripheral area includes forming a first gate insulating layer with a first thickness over a substrate of a first region in the...
7554150 Non-volatile memory device and method of manufacturing the same  
A non-volatile memory device includes isolation layers, a cell trench, a floating gate, a common source region and a word line. The isolation layers define an active region of a substrate. The cell...
7553729 Method of manufacturing non-volatile memory device  
A method of manufacturing a non-volatile memory device includes the steps of forming gates respectively having a structure in which a gate insulating layer, a first conductive layer, a dielectric...
7553720 Non-volatile memory device and fabrication method thereof  
A non-volatile memory device includes a buffer oxide film on a substrate; a polysilicon layer on the buffer oxide film; a silicon oxy-nitride (SiON) layer on the polysilicon layer, a first...
7553719 Flash memory device and method for fabricating the same  
A flash memory device includes a source region formed in an active region of a semiconductor substrate; a recessed region formed in the active region on either side of the source region, the...
7550353 Method of forming semiconductor device  
One embodiment of a method for forming a semiconductor device can include forming a gate pattern on a semiconductor substrate and performing a selective re-oxidation process on the gate pattern in...
7550350 Methods of forming flash memory device  
The present disclosure relates to methods of forming a flash memory device. A plurality of cells, a plurality of select transistors, and a transistor are formed over a semiconductor substrate...
7550339 Memory device with high dielectric constant gate dielectrics and metal floating gates  
A memory cell transistor includes a high dielectric constant tunnel insulator, a metal floating gate, and a high dielectric constant inter-gate insulator comprising a metal oxide formed over a...
7544989 High density stepped, non-planar flash memory  
A first plurality of memory cells is in a first plane in a first column of the array. A second plurality of memory cells is in a second plane in the same column. The second plurality of memory...
7544558 Method for integrating DMOS into sub-micron CMOS process  
This invention is forming the DMOS channel after CMOS active layer before gate poly layer to make the modular DMOS process step easily adding into the sub-micron CMOS or BiCMOS process. And DMOS...
7541637 Non-volatile semiconductor memory element and corresponding production and operation method  
The invention relates to a nonvolatile semiconductor storage element and an associated production and control method, the storage element includes a semiconductor substrate having a source region,...
7541237 Non-volatile memory cell array having discontinuous source and drain diffusions contacted by continuous bit line conductors and methods of forming  
Rows of memory cells are electrically isolated from one another by trenches formed in the substrate between the rows that are filled with a dielectric, commonly called “shallow trench...
7534690 Non-volatile memory with asymmetrical doping profile  
Stacked gate structures for a NAND string are created on a substrate. Source implantations are performed at a first implantation angle to areas between the stacked gate structures. Drain...
7534682 Semiconductor memory device with a stacked gate including a floating gate and a control gate and method of manufacturing the same  
A semiconductor memory device includes first and second MOS transistors. The first MOS transistor is formed on a region enclosed by a first element isolating region and includes a first gate...
7534625 Phase change memory with damascene memory element  
A phase change material may be formed within a trench in a first layer to form a damascene memory element and in an overlying layer to form a threshold device. Below the first layer may be a wall...
7531405 Method of manufacturing a dielectric layer and corresponding semiconductor device  
A polycrystalline dielectric layer is formed wherein the dielectric layer comprises a first dielectric material containing an oxide or nitride and a second material contributing to less than 1% in...
7531403 SOI semiconductor components and methods for their fabrication  
SOI semiconductor components and methods for their fabrication are provided wherein the SOI semiconductor components include an MOS transistor in the supporting semiconductor substrate. In...
7517762 Semiconductor device capable of preventing moisture-absorption of fuse area thereof and method for manufacturing the fuse area  
A fuse area of a semiconductor device capable of preventing moisture-absorption and a method for manufacturing the fuse area are provided. When forming a guard ring for preventing permeation of...
7517747 Nanocrystal non-volatile memory cell and method therefor  
A method of forming a semiconductor device includes forming a first dielectric layer over a semiconductor substrate, forming a plurality of discrete storage elements over the first dielectric...
7514734 Hardmask for forming ferroelectric capacitors in a semiconductor device and methods for fabricating the same  
Hardmasks and fabrication methods are presented for producing ferroelectric capacitors in a semiconductor device, wherein a hardmask comprising aluminum oxide or strontium tantalum oxide is formed...
7514311 Method of manufacturing a SONOS memory  
A method of manufacturing a silicon-oxide-nitride-oxide-silicon (SONOS) memory is provided herein. In the method, a bottom silicon oxide layer is formed over a substrate. A patterned mask layer...
7510931 Method of fabricating a nonvolatile memory device  
A method of fabricating a nonvolatile memory device includes forming a charge tunneling layer on a semiconductor substrate, forming a charge trapping layer on the charge tunneling layer, forming a...
7504294 Method of manufacturing an electrically erasable programmable read-only memory (EEPROM)  
A semiconductor device comprises a memory cell array portion and peripheral circuit portion, wherein a first insulation film including elements as main components other than nitrogen fills between...
7501319 Manufacturing a semiconductor device including sidewall floating gates  
A semiconductor device and a fabricating method thereof are disclosed. The semiconductor device includes polysilicon gate electrodes, a gate oxide layer, sidewall floating gates, a block oxide...
7498217 Methods of manufacturing semiconductor memory devices with unit cells having charge trapping layers  
In a method of manufacturing a semiconductor device such as a SONOS type semiconductor device, a trench is formed on a substrate. An isolation layer protruding from the substrate is formed to fill...
Matches 1 - 50 out of 402 1 2 3 4 5 6 7 8 9 >