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7618854 High frequency MOS transistor, method of forming the same, and method of manufacturing a semiconductor device including the same  
In a high frequency LDMOS transistor, a gate structure is formed on a substrate. A drain, doped with first type impurities at a first concentration, is formed on the substrate spaced apart from the...
7611940 CMOS image sensor and manufacturing method thereof  
Disclosed are a CMOS image sensor and a manufacturing method thereof. The method includes forming an isolation layer in a semiconductor substrate, defining an active region including a photo diode...
7601580 Image sensor and method of fabricating the same  
An image sensor may include a semiconductor substrate having a pixel array region and a logic region. A first gate electrode may be formed on the pixel array region of the semiconductor substrate....
7598135 Method for fabricating CMOS image sensor  
Provided is a method for fabricating CMOS image sensor. One method includes: preparing a semiconductor substrate in which a photodiode region and a transistor region are defined; sequentially...
7598134 Memory device forming methods  
A memory device includes an array of memory cells and peripheral devices. At least some of the individual memory cells include carbonated portions that contain SiC. At least some of the peripheral...
7595243 Fabrication of semiconductor structure having N-channel channel-junction field-effect transistor  
A semiconductor technology combines a normally off n-channel channel-junction insulated-gate field-effect transistor (“IGFET”) ( 104 ) and an n-channel surface-channel IGFET ( 100 or 160 ) to...
7595230 Thin film transistor, method of manufacturing same, display device, method of modifying an oxide film, method of forming an oxide film, semiconductor device, method of manufacturing semiconductor device, and apparatus for manufacturing semiconductor device  
In a manufacturing method of a thin film transistor ( 1 ), the oxide film forming step is performed whereby: a process-target substrate ( 2 ) having a surface on which a gate oxide film ( 4 )...
7588978 Method for forming semiconductor device  
Embodiments relate to a method for forming a semiconductor device in which a first oxide layer may be deposited over a surface of a semiconductor substrate including high-voltage (HV) and...
7586162 High-value integrated resistor and method of making  
A high value resistive device in an integrated circuit is disclosed, including a pair of substantially similar resistor segments each having an elongated semiconductor channel of e.g. silicon,...
7582522 Method and device for CMOS image sensing with separate source formation  
A method and device for image sensing. The method includes forming a first well and a second well in a substrate, forming a gate oxide layer on the substrate, and depositing a first gate region and...
7579617 Semiconductor device and production method thereof  
A method of fabricating a semiconductor device is disclosed that is able to suppress a short channel effect and improve carrier mobility. In the method, trenches are formed in a silicon substrate...
7579051 Method for manufacturing an electron emitter  
A method for manufacturing an electron emitter, the method includes discharging a droplet of a function liquid containing a material for forming the conductive film onto a discharge surface of the...
7569164 Solder precoating method  
A solder paste composition used in a solder precoating method of forming solder bumps by forming a dam around electrodes on a substrate, filling a solder paste composition on the electrodes within...
7566606 Methods of fabricating semiconductor devices having strained dual channel layers  
A semiconductor structure includes a strain-inducing substrate layer having a germanium concentration of at least 10 atomic %. The semiconductor structure also includes a compressively strained...
7560330 CMOS image sensor and method for manufacturing the same  
A CIS and a method of manufacturing the same are provided. The CIS includes a device isolation layer formed on a device isolation region of a substrate of a first conductive type, the substrate...
7560172 Low voltage CMOS structure with dynamic threshold voltage  
A method for dynamically varying a threshold voltage of a complimentary metal oxide semiconductor (CMOS) includes providing a substrate pickup formed a semiconductor material type which is...
7556998 Method of manufacturing semiconductor devices  
A method of manufacturing a semiconductor device including forming a dummy gate electrode which is divided into first and second areas, selectively implanting N-type ions and P-type ions into the...
7547594 Metal-oxide-semiconductor transistor and method of forming the same  
A method of forming a metal-oxide-semiconductor (MOS) transistor device is provided. First, a semiconductor substrate is prepared. Subsequently, a gate structure is formed on the semiconductor...
7544557 Gate defined Schottky diode  
A Schottky diode exhibiting low series resistance is efficiently fabricated using a substantially standard CMOS process flow by forming the Schottky diode using substantially the same structures...
7541235 Method for providing a programmable electrostatic discharge (ESD) protection device  
A method for providing a programmable electrostatic discharge (ESD) protection device is provided. The method includes providing a source diffusion in a substrate, providing a deeper body diffusion...
7534678 Methods of forming CMOS integrated circuit devices having stressed NMOS and PMOS channel regions therein and circuits formed thereby  
Methods of forming CMOS integrated circuit devices include forming at least first, second and third transistors in a semiconductor substrate and then covering the transistors with one or more...
7531392 Multi-orientation semiconductor-on-insulator (SOI) substrate, and method of fabricating same  
The present invention relates to semiconductor-on-insulator (SOI) substrate structures that contain surface semiconductor regions of different crystal orientations located directly on an insulator...
7531373 Methods of forming a conductive interconnect in a pixel of an imager and in other integrated circuitry  
A method of forming conductive interconnects includes forming a node of a circuit component on a substrate. A conductive metal line is formed at a first metal routing level that is elevationally...
7528032 Method for manufacturing semiconductor device  
In a method of manufacturing a semiconductor device, a polycrystalline silicon film is deposited on a gate insulating film formed over a substrate and is doped with a P-type impurity to form the...
7527995 Method of making prestructure for MEMS systems  
A method of making an interferometric modulator element includes forming at least two posts, such as posts formed from spin-on glass, on a substrate. In alternate embodiments, the posts may be...
7517762 Semiconductor device capable of preventing moisture-absorption of fuse area thereof and method for manufacturing the fuse area  
A fuse area of a semiconductor device capable of preventing moisture-absorption and a method for manufacturing the fuse area are provided. When forming a guard ring for preventing permeation of...
7498190 Method for fabricating a CMOS image sensor  
A method for fabricating a CMOS image sensor is disclosed. First, a substrate having a sensor array region and a peripheral region is provided. A contact pad is formed on the substrate of the...
7485523 Method for forming high voltage device and semiconductor device  
The invention is directed to a method for manufacturing a high voltage device. The method comprises steps of providing a substrate and then forming a first doped region having a first conductive...
7482623 Organic semiconductor film and organic semiconductor device  
An organic semiconductor device includes a substrate, a gate electrode formed directly on the substrate , gate insulating film formed directly on the gate electrode, a source electrode and a drain...
7479452 Method of forming contact plugs  
A method of forming cell bitline contact plugs is disclosed in the present invention. After providing a semiconductor substrate with a first region and a second region, cell bitline contacts are...
7452765 Single event upset in SRAM cells in FPGAs with high resistivity gate structures  
SEU-hardening series resistances loads are formed within the gate structures of cross-coupled inverters of a latch. For some embodiments, the gate contact for the input of each cross-coupled...
7445983 Method of manufacturing a semiconductor integrated circuit device  
A method of manufacturing a semiconductor integrated circuit (IC) device that integrates a TLPM (trench lateral power MOSFET) and one or more planar semiconductor devices on a semiconductor...
7442994 CMOS image sensor and method for manufacturing the same  
A CMOS image sensor and a method for manufacturing the same improve light-receiving efficiency and maintain a margin in the design of a metal line. The CMOS image sensor includes a transparent...
7442611 Method of applying stresses to PFET and NFET transistor channels for improved performance  
A method is provided for fabricating a semiconductor device structure. In such method a p-type field effect transistor (PFET) and an n-type field effect transistor (NFET), each of the NFET and the...
7405127 Method for producing a vertical field effect transistor  
A method for producing a field effect transistor, in which a plurality of layers are in each case deposited, planarized and etched back, in particular a gate electrode layer, is disclosed. This...
7405101 CMOS imager with selectively silicided gate  
The invention also relates to an apparatus and method for selectively providing a silicide coating over the transistor gates of a CMOS imager to improve the speed of the transistor gates. The...
7402864 Method for forming a DRAM semiconductor device with a sense amplifier  
A method for forming a sense amplifier of a semiconductor device prevents bit lines from being bridged to each other by a stepped portion created on an insulation interlayer due to irregular...
7402492 Method of manufacturing a memory device having improved erasing characteristics  
In a method of manufacturing a memory device having improved erasing characteristics, the method includes sequentially forming a tunneling oxide layer, a charge storing layer, and a blocking oxide...
7402479 CMOS image sensor and fabricating method thereof  
A fabricating method of a CMOS image sensor includes the steps of: forming a transfer gate on a semiconductor substrate where a device isolation layer is formed; forming a first n-type ion...
7390719 Method of manufacturing a semiconductor device having a dual gate structure  
A semiconductor device having a dual gate is formed on a substrate having a dielectric layer. A first metallic conductive layer is formed on the dielectric layer to a first thickness, and annealed...
7384836 Integrated circuit transistor insulating region fabrication method  
A transistor of an integrated circuit is provided. A first doped well region is formed in a well layer at a first active region. At least part of the first doped well region is adjacent to a gate...
7361542 Method of fabricating CMOS image sensor  
A method of fabricating a CMOS image sensor can minimize a dark current by avoiding a dry etch process of a photodiode surface. The method can also reduce a contact resistance and variation of the...
7361540 Method of reducing noise disturbing a signal in an electronic device  
Certain aspects of a method for reducing noise disturbing at least one signal in an electronic device may comprise shielding a first layer doped with a first dopant from a signaling layer employing...
7361526 Germanium photo detector having planar surface through germanium epitaxial overgrowth  
A method of fabricating a germanium photo detector includes preparing a silicon substrate wafer and depositing and planarizing a silicon oxide layer on the silicon substrate. Contact holes are...
7358107 Method of fabricating a germanium photo detector on a high quality germanium epitaxial overgrowth layer  
A method of fabricating a germanium photo detector includes preparing a silicon substrate; depositing and planarizing a silicon oxide layer; forming contact holes in the silicon oxide layer which...
7338894 Semiconductor device having nitridated oxide layer and method therefor  
A semiconductor device includes a substrate ( 12 ), a first insulating layer ( 14 ) over a surface of the substrate ( 12 ), a layer of nanocrystals ( 13 ) over a surface of the first insulating...
7335546 Method and device for CMOS image sensing with separate source formation  
A method and device for image sensing. The method includes forming a first well and a second well in a substrate, forming a gate oxide layer on the substrate, and depositing a first gate region and...
7323359 Mounting method for a semiconductor component  
A mounting method for a semiconductor component. The method includes application of solder material to the semiconductor component, application of at least one contact/mounting element made of...
7319057 Phase change material memory device  
A lower electrode may be covered by a protective film to reduce the exposure of the lower electrode to subsequent processing steps or the open environment. As a result, materials that may have...
7314800 Application of different isolation schemes for logic and embedded memory  
The present invention facilitates semiconductor device fabrication by providing mechanisms for utilizing different isolation schemes within embedded memory and other logic portions of a device. The...
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