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9039411 Thermal treatment apparatus  
A disclosed thermal treatment apparatus includes a supporting member where plural substrates are supported in the form of shelves; a reaction tube that accommodates the supporting member within...
9023681 Method of fabricating heterojunction battery  
The present invention discloses a method of fabricating a heterojunction battery, comprising the steps of: depositing a first amorphous silicon intrinsic layer on the front of an n-type silicon...
8981338 Semiconductor photocathode and method for manufacturing the same  
A semiconductor photocathode includes an AlXGa1-XN layer (0≦X<1) bonded to a glass substrate via an SiO2 layer and an alkali-metal-containing layer formed on the AlXGa1-XN layer. The AlXGa1-XN...
8969848 Materials and configurations of a field emission device  
A field emission device is configured as a heat engine. Different embodiments of the heat engine may have different configurations that may include a cathode, gate, suppressor, and anode arranged...
8916394 Method for manufacturing a carbon nanotube field emission device with overhanging gate  
A carbon nanotube field emission device with overhanging gate fabricated by a double silicon-on-insulator process. Other embodiments are described and claimed.
8912526 Electron multiplier device having a nanodiamond layer  
An electron multiplier for a system for detecting electromagnetic radiation or an ion flow is disclosed. The multiplier includes at least one active structure intended to receive a flow of...
8900890 Corner cube enhanced photocathode  
Techniques are disclosed for improving the quantum efficiency of photocathode devices. The techniques allow for an increase in the optical thickness of the photocathode device, while...
8877526 Semiconductor light emitting device and method for manufacturing the same  
According to one embodiment, a semiconductor light emitting device includes a first semiconductor layer, a second semiconductor layer and a light emitting part. The first semiconductor layer...
8878161 Tunnel diodes incorporating strain-balanced, quantum-confined heterostructures  
A strain-balanced quantum well tunnel junction (SB-QWTJ) device. QW structures are formed from alternating quantum well and barrier layers situated between n++ and p++ layers in a tunnel junction...
8835902 Nano-structured light-emitting devices  
A nano-structured light-emitting device (LED) includes: a plurality of nanostructures on a first type semiconductor layer. Each of the plurality of nanostructures includes: a first type...
8727827 Method for making field emission electron source  
A method for making field emission electron source comprises following steps. An insulating layer is coated on outer surface of a linear carbon nanotube structure. A field emission electron source...
8708795 Method and system for facilitating extended play of a wagering game  
Systems and methods for facilitating one or more base wagering games in an extended format are provided. Outcomes for the base wagering game may be determined, and based on the outcomes, player...
8692226 Materials and configurations of a field emission device  
A field emission device is configured as a heat engine. Different embodiments of the heat engine may have different configurations that may include a cathode, gate, suppressor, and anode arranged...
8686399 Growth substrate and light emitting device  
Disclosed are a growth substrate and a light emitting device. The light emitting device includes a silicon substrate, a first buffer layer disposed on the silicon substrate and having an exposing...
8680511 Bilayer gate dielectric with low equivalent oxide thickness for graphene devices  
A silicon nitride layer is provided on an uppermost surface of a graphene layer and then a hafnium dioxide layer is provided on an uppermost surface of the silicon nitride layer. The silicon...
8669545 Light emitting device having sub barrier layers with varying energy bands, light emitting device package and lighting system including the light emitting device package  
A light emitting device includes an active layer including a quantum barrier and a quantum well, a first conductive type semiconductor layer disposed at one side of the active layer, and a second...
8664641 Nano device integrated on graphene and monocrystalline graphite  
Disclosed herein is a nano device, including: a carbon layer including one-layered graphene having a honeycombed planar structure in which carbon atoms are connected with each other and two or...
8642995 Photoactive devices with improved distribution of charge carriers, and methods of forming same  
Radiation-emitting semiconductor devices include a first base region comprising an n-type III-V semiconductor material, a second base region comprising a p-type III-V semiconductor material, and a...
8633468 Light emitting device with dislocation bending structure  
A solution for reducing a number of dislocations in an active region of an emitting device is provided. A dislocation bending structure can be included in the emitting device between the substrate...
8624221 Light emitting device having a well structure different of a multi-quantum well structures  
A light emitting device is provided. The light emitting device comprises an active layer comprising a plurality of well layers and a plurality of barrier layers. The bather layers comprise a first...
8610107 Light emitting device having a well structure different of a multi-quantum well structures  
A light emitting device is provided. The light emitting device comprises an active layer comprising a plurality of well layers and barrier layers. The barrier layers comprise a first barrier layer...
8574942 Method of forming silicon nanowires and method of fabricating lithium secondary battery using the same  
A method of preparing a silicon nanowire and a method of fabricating a lithium secondary battery including the silicon nanowire are provided. The method of preparing a silicon nanowire may include...
8513644 Strain-controlled atomic layer epitaxy, quantum wells and superlattices prepared thereby and uses thereof  
Processes for forming quantum well structures which are characterized by controllable nitride content are provided, as well as superlattice structures, optical devices and optical communication...
8507890 Photoconversion device with enhanced photon absorption  
An infrared photoconversion device comprising a collector with at least an active layer made of a single sheet of doped single-layer, bilayer, or multilayer graphene patterned as nanodisks or...
8497493 Growth substrate and light emitting device  
Disclosed are a growth substrate and a light emitting device. The light emitting device includes a silicon substrate, a first buffer layer disposed on the silicon substrate and having an exposing...
8492744 Semiconducting microcavity and microchannel plasma devices  
Preferred embodiments of the invention provide semiconducting microcavity plasma devices. Preferred embodiments of the invention are microcavity plasma devices having at least two pn junctions,...
8481347 Resonance tunneling devices and methods of manufacturing the same  
Provided are a resonance tunneling device and a method of manufacturing the resonance tunneling device. The resonance tunneling device includes a substrate, a plurality of electrodes disposed on...
8476090 Method forming a semiconductor light emitting device with perforations formed within  
A circuit board for a light emitting diode package improved in heat radiation efficiency and a manufacturing method thereof. In a simple manufacturing process, insulating layers are formed by...
8471243 Photoactive devices with improved distribution of charge carriers, and methods of forming same  
Radiation-emitting semiconductor devices include a first base region comprising an n-type III-V semiconductor material, a second base region comprising a p-type III-V semiconductor material, and a...
8436332 Electron emission element and imaging device having the same  
An electron emission element has an electron emission layer that emits an electron from a surface emission portion, a focusing electrode layer that is film-formed on a surface of the electron...
8436334 Fabrication of phosphor free red and white nitride-based LEDs  
A multiple quantum well (MQW) structure for a light emitting diode and a method for fabricating a MQW structure for a light emitting diode are provided. The MQW structure comprises a plurality of...
8405189 Carbon nanotube (CNT) capacitors and devices integrated with CNT capacitors  
An example of a carbon nanotube capacitor may include (i) a carbon nanotube film having carbon nanotubes and voids with dielectric material, (ii) conductive contacts and (iii) a dielectric layer....
8394651 Auger rate suppression in confined structures  
The present invention is generally directed to a method of suppressing the Auger rate in confined structures, comprising replacing an abrupt confinement potential with either a smooth confinement...
8388431 Gaming machine and game control method thereof, in which common game uses symbol columns different from those used in unit game  
A gaming machine of the present invention includes slot machines each of which repeatably runs, independently of the other slot machines, a unit game which scroll displays a base game symbol...
8330178 Package structure and package process of light emitting diode  
A light emitted diode (LED) package structure and an LED package process are provided. The LED package structure comprises a carrier, a spacer, at least one LED chip, a junction coating, a...
8314539 Field electron emitter including nucleic acid-coated carbon nanotube and method of manufacturing the same  
A field electron emitter includes a thin film layer including a carbon nanotube (“CNT”) disposed on a substrate, wherein the thin film layer includes nucleic acid.
8293628 Strain-controlled atomic layer epitaxy, quantum wells and superlattices prepared thereby and uses thereof  
Processes for forming quantum well structures which are characterized by controllable nitride content are provided, as well as superlattice structures, optical devices and optical communication...
8268646 Group III-nitrides on SI substrates using a nanostructured interlayer  
A layered group III-nitride article includes a single crystal silicon substrate, and a highly textured group III-nitride layer, such as GaN, disposed on the silicon substrate. The highly textured...
8269210 Cathode assembly containing an ultraviolet light-blocking dielectric layer  
A field emission cathode assembly that has a UV-blocking, insulating dielectric layer (3.4).
8227268 Methods of fabricating group III nitride based light emitting diode structures with a quantum well and superlattice, group III nitride based quantum well structures and group III nitride based superlattice structures  
A light emitting diode is provided having a Group III nitride based superlattice and a Group III nitride based active region on the superlattice. The active region has at least one quantum well...
8216863 Method for producing a field-emitter array with controlled apex sharpness  
A method of manufacturing field-emitter arrays by a molding technique includes uniformly controlling a shape of mold holes to obtain field emitter tips having diameters below 100 nm and blunted...
8198106 Dense array of field emitters using vertical ballasting structures  
A field emitter array structure is provided. The field emitter array structure includes a plurality of vertical un-gated transistor structures formed on a semiconductor substrate. The...
8188456 Thermionic electron emitters/collectors have a doped diamond layer with variable doping concentrations  
A thermionic electron emitter/collector includes a substrate and a doped diamond electron emitter/collector layer on the substrate. The doped diamond electron emitter/collector layer has at least...
8143514 Method and structure for hydrogenation of silicon substrates with shaped covers  
Method and structure for hydrogenation of silicon substrates with shaped covers. According to an embodiment, the present invention provides a method for fabricating a photovoltaic material. The...
8110417 Method of forming pattern on group III nitride semiconductor substrate and method of manufacturing group III nitride semiconductor light emitting device  
There is provided a method of forming a pattern on a group III nitride semiconductor substrate. A method of forming a pattern on a group III nitride semiconductor substrate according to an aspect...
8076701 Large scale patterned growth of aligned one-dimensional nanostructures  
A method of making nanostructures using a self-assembled monolayer of organic spheres is disclosed. The nanostructures include bowl-shaped structures and patterned elongated nanostructures. A...
8053258 Thick film sealing glass compositions for low temperature firing  
The present invention is a composition that may be used for sealing applications in the manufacture of electronic devices. The composition includes organic vehicles that may be removed upon low...
8048397 Laser-based method for making field emission cathode  
A method for making a field emission cathode includes the steps of: (a) providing a substrate having a first substrate surface and a second substrate surface opposite to the first substrate...
8030191 Method of manufacturing micro structure, and method of manufacturing mold material  
Disclosed herein are a method of producing microstructure and a method of producing mold, the methods permitting production of much smaller pores than before in an atmosphere where impurities are...
8017176 Robust activation method for negative electron affinity photocathodes  
A method by which photocathodes(201), single crystal, amorphous, or otherwise ordered, can be surface modified to a robust state of lowered and in best cases negative, electron affinity has been...

Matches 1 - 50 out of 399 1 2 3 4 5 6 7 8 >