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9029986 Transistors with dual layer passivation  
Semiconductor devices are provided with dual passivation layers. A semiconductor layer is formed on a substrate and covered by a first passivation layer (PL-1). PL-1 and part of the semiconductor...
9029874 Semiconductor device having a first silicon carbide semiconductor layer and a second silicon carbide semiconductor layer  
A semiconductor device includes a first cell and a second cell. Each of the first cell and the second cell includes a first silicon carbide semiconductor layer including a first region and a...
8987076 Method of manufacturing transistor  
A method of manufacturing a transistor with suppressed characteristic variations caused by gate current, and a method of manufacturing an amplifier using such a transistor are provided. The...
8963234 Semiconductor device  
The substrate is made of a compound semiconductor, and has a recess, which opens at one main surface and has side wall surfaces when viewed in a cross section along a thickness direction. The gate...
8932919 Vertical stacking of graphene in a field-effect transistor  
A graphene field-effect transistor is disclosed. The graphene field-effect transistor includes a first graphene sheet, a first gate layer coupled to the first graphene sheet and a second graphene...
8928045 Semiconductor device  
A channel region having a first conductivity type is disposed in a surface portion of a semiconductor substrate. A gate region having a second conductivity type is disposed in a surface portion of...
8928074 Vertical junction field effect transistors and diodes having graded doped regions and methods of making  
Semiconductor devices and methods of making the devices are described. The devices can be junction field-effect transistors (JFETs) or diodes such as junction barrier Schottky (JBS) diodes or PiN...
8921172 Junction field effect transistor structure with P-type silicon germanium or silicon germanium carbide gate(s) and method of forming the structure  
Disclosed are embodiments of a junction field effect transistor (JFET) structure with one or more P-type silicon germanium (SiGe) or silicon germanium carbide (SiGeC) gates (i.e., a SiGe or SiGeC...
8890212 Normally-off high electron mobility transistor  
According to example embodiments, a normally-off high electron mobility transistor (HEMT) includes: a channel layer having a first nitride semiconductor, a channel supply layer on the channel...
8877593 Semiconductor device including an asymmetric feature, and method of making the same  
A semiconductor device (e.g., field effect transistor (FET)) having an asymmetric feature, includes a first gate formed on a substrate, first and second diffusion regions formed in the substrate...
8877575 Complementary junction field effect transistor device and its gate-last fabrication method  
The disclosure relates to a complementary junction field effect transistor (c-JFET) and its gate-last fabrication method. The method of fabricating a semiconductor device includes: forming a dummy...
8871120 Compositions of matter, and methods of removing silicon dioxide  
Some embodiments include methods of removing silicon dioxide in which the silicon dioxide is exposed to a mixture that includes activated hydrogen and at least one primary, secondary, tertiary or...
8860098 Vjfet devices  
The present disclosure describes structures and processes to produce high voltage JFETs in wide-bandgap materials, most particularly in Silicon Carbide. The present disclosure also provides for...
8823098 Structures for power transistor and methods of manufacture  
The invention discloses a manufacture method and structure of a power transistor, comprising a lower electrode, a substrate, a drift region, two first conductive regions, two second conductive...
8816408 Compound semiconductor device and manufacturing method thereof  
A compound semiconductor device includes a compound semiconductor laminated structure; a source electrode, a drain electrode, and a gate electrode formed over the compound semiconductor laminated...
8778789 Methods for fabricating integrated circuits having low resistance metal gate structures  
Methods for fabricating integrated circuits having low resistance metal gate structures are provided. One method includes forming a metal gate stack in a FET trench formed in a FET region. The...
8754455 Junction field effect transistor structure with P-type silicon germanium or silicon germanium carbide gate(s) and method of forming the structure  
Disclosed are embodiments of a junction field effect transistor (JFET) structure with one or more P-type silicon germanium (SiGe) or silicon germanium carbide (SiGeC) gates (i.e., a SiGe or SiGeC...
8722477 Cascoded high voltage junction field effect transistor  
A cascoded junction field transistor (JFET) device comprises a first stage high voltage JFET cascoded to a second stage low voltage JFET wherein one of the first and second stages JFET is...
8716078 Method and system for a gallium nitride vertical JFET with self-aligned gate metallization  
A semiconductor device includes a III-nitride substrate and a first III-nitride epitaxial layer coupled to the III-nitride substrate and comprising a drift region, a channel region, and an...
8716763 Semiconductor structure and method for forming the same  
A semiconductor structure and a method for forming the same are provided. The semiconductor structure includes a first doped region and a semiconductor region. The first doped region has a first...
8698246 High-voltage oxide transistor and method of manufacturing the same  
A high-voltage oxide transistor includes a substrate; a channel layer disposed on the substrate; a gate electrode disposed on the substrate to correspond to the channel layer; a source contacting...
8669149 Semiconductor structure and fabrication method thereof  
A method for fabrication of a semiconductor device is provided. A first type doped body region is formed in a first type substrate. A first type heavily-doped region is formed in the first type...
8653535 Silicon carbide semiconductor device having a contact region that includes a first region and a second region, and process for production thereof  
A semiconductor device according to the present invention includes a contact region 201 of a second conductivity type which is provided in a body region 104. The contact region 201 includes a...
RE44730 Method of manufacturing a MOSFET structure  
A method of forming a MOSFET is provided. The method comprises forming a relatively thin layer of dielectric on a substrate. Depositing a gate material layer on the relatively thin layer of...
RE44720 Method of manufacturing a MOSFET structure  
A method of forming a MOSFET is provided. The method comprises forming a relatively thin layer of dielectric on a substrate. Depositing a gate material layer on the relatively thin layer of...
8618583 Junction gate field effect transistor structure having n-channel  
The disclosure relates generally to junction gate field effect transistor (JFET) structures and methods of forming the same. The JFET structure includes a p-type substrate having a p-region...
8603870 Semiconductor device and method of manufacturing the same  
A semiconductor device having a CMOS structure, wherein, in manufacturing a CMOS circuit, an impurity element which imparts p-type conductivity to the active layer of the p-channel type...
8592298 Fabrication of floating guard rings using selective regrowth  
A method for fabricating edge termination structures in gallium nitride (GaN) materials includes providing a n-type GaN substrate having a first surface and a second surface, forming an n-type GaN...
8575648 Silicon carbide semiconductor device and method of manufacturing the same  
A silicon carbide semiconductor device having a JFET or a MOSFET includes a semiconductor substrate and a trench. The semiconductor substrate has a silicon carbide substrate, a drift layer on the...
8569171 Mask-based silicidation for FEOL defectivity reduction and yield boost  
A semiconductor device with reduced defect density is fabricated by forming localized metal silicides instead of full area silicidation. Embodiments include forming a transistor having a gate...
8524552 Normally-off power JFET and manufacturing method thereof  
In general, in a semiconductor active element such as a normally-off JFET based on SiC in which an impurity diffusion speed is significantly lower than in silicon, gate regions are formed through...
8519452 Semiconductor device with junction field-effect transistor and manufacturing method of the same  
A semiconductor device with a JFET is disclosed. The semiconductor device includes a trench and a contact embedded layer formed in the trench. A gate wire is connected to the contact embedded...
8492215 Static random access memory (SRAM) cell and method for forming same  
An embodiment is a method for forming a static random access memory (SRAM) cell. The method comprises forming transistors on a semiconductor substrate and forming a first linear intra-cell...
8492803 Field effect device with reduced thickness gate  
A semiconductor structure is fabricated with reduced gate capacitance by thinning of a gate electrode to provide a reduced thickness gate electrode. The gate electrode is thinned after forming a...
8481372 JFET device structures and methods for fabricating the same  
In accordance with the present techniques, there is provided a JFET device structures and methods for fabricating the same. Specifically, there is provided a transistor including a semiconductor...
8435845 Junction field effect transistor with an epitaxially grown gate structure  
A method of fabricating a semiconductor device that includes forming a replacement gate structure on a portion of a semiconductor substrate, wherein source regions and drain regions are formed in...
8421127 Semiconductor device and method for fabricating the same  
A semiconductor device and a method for fabricating the same are described. The semiconductor device includes a well of a first conductive type, first doped regions of a second conductive type,...
8399361 Semiconductor device and method of manufacturing the same  
A semiconductor device includes a substrate, a compound semiconductor layer formed over the substrate, and a protective insulating film composed of silicon nitride, which is formed over a surface...
8373207 Semiconductor device  
A semiconductor device includes: a rectifying element; an electrode pad electrically connected to the rectifying element; and a resistance and a depletion transistor arranged between the...
8334178 High breakdown voltage double-gate semiconductor device  
A double-gate semiconductor device includes a MOS gate and a junction gate, in which the bias of the junction gate is a function of the gate voltage of the MOS gate. The breakdown voltage of the...
8288798 Step doping in extensions of III-V family semiconductor devices  
The present disclosure provides a method of fabricating a semiconductor device. The method includes forming a buffer layer over a substrate, the buffer layer containing a first compound...
8274150 Chip bump structure and method for forming the same  
A chip bump structure is formed on a substrate. The substrate includes at least one contact pad and a dielectric layer. The dielectric layer has at least one opening. The at least one opening...
8264058 MOS-driver compatible JFET structure with enhanced gate source characteristics  
A MOSFET driver compatible JFET device is disclosed. The JFET device can include a gate contact, a drain contact, and a source contact. The JFET device can further include a first gate region of...
8193046 Junction field effect transistor  
A junction field effect transistor having a drain and a source, each defined by regions of a first type of semiconductor interconnected by a channel, and in which a dopant profile at a side of the...
8169022 Vertical junction field effect transistors and diodes having graded doped regions and methods of making  
Semiconductor devices and methods of making the devices are described. The devices can be junction field-effect transistors (JFETs) or diodes such as junction barrier Schottky (JBS) diodes or PiN...
8163653 Semiconductor device and method of manufacturing the same  
A semiconductor device includes a substrate, a compound semiconductor layer formed over the substrate, and a protective insulating film composed of silicon nitride, which is formed over a surface...
8129232 Semiconductor device and method of manufacturing the same  
A semiconductor device having a CMOS structure, wherein, in manufacturing a CMOS circuit, an impurity element which imparts p-type conductivity to the active layer of the p-channel type...
8120072 JFET devices with increased barrier height and methods of making same  
Devices and methods for providing JFET transistors with improved operating characteristics are provided. Specifically, one or more embodiments of the present invention relate to JFET transistors...
8097905 Cascoded high voltage junction field effect transistor  
A cascoded junction field transistor (JFET) device comprises a first stage high voltage JFET cascoded to a second stage low voltage JFET wherein one of the first and second stages JFET is...
8053298 Planar split-gate high-performance MOSFET structure and manufacturing method  
This invention discloses an improved semiconductor power device includes a plurality of power transistor cells wherein each cell further includes a planar gate padded by a gate oxide layer...
Matches 1 - 50 out of 187 1 2 3 4 >