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7626217 Composite substrates of conductive and insulating or semi-insulating group III-nitrides for group III-nitride devices  
Group III-Nitride semiconductor device structures and methods of fabricating Group III-Nitride structures are provided that include an electrically conductive Group III-Nitride substrate, such as a...
7622322 Method of forming an AlN coated heterojunction field effect transistor  
A passivation layer of AlN is deposited on a GaN channel HFET using molecular beam epitaxy (MBE). Using MBE, many other surfaces may also be coated with AlN, including silicon devices, nitride...
7618851 Method for the production of a semiconductor component having a metallic gate electrode disposed in a double-recess structure  
The production of a microelectronic component, particularly a pHEMT, having a T-shaped gate electrode in a double-recess structure uses a production method for self-adjusting alignment of the two...
7608496 High speed GE channel heterostructures for field effect devices  
A method and a layered heterostructure for forming high mobility Ge channel field effect transistors is described incorporating a plurality of semiconductor layers on a semiconductor substrate, and...
7605017 Method of manufacturing a semiconductor device and products made thereby  
Methods of manufacturing a semiconductor device and resulting products. The semiconductor device includes a semiconductor substrate, a hetero semiconductor region hetero-adjoined with the...
7601573 Method for producing nitride semiconductor device  
A nitride semiconductor device, which includes a III-V Group nitride semiconductor layer being composed of a III Group element consisting of at least one of a group containing of gallium, aluminum,...
7598131 High power-low noise microwave GaN heterojunction field effect transistor  
A method for fabricating heterojunction field effect transistors (HFET) and a family of HFET layer structures are presented. In the method, a step of depositing a HFET semiconductor structure onto...
7598108 Gallium nitride-on-silicon interface using multiple aluminum compound buffer layers  
A thermal expansion interface between silicon (Si) and gallium nitride (GaN) films using multiple buffer layers of aluminum compounds has been provided, along with an associated fabrication method....
7592211 Methods of fabricating transistors including supported gate electrodes  
Transistors are fabricated by forming a protective layer having an opening extending therethrough on a substrate, and forming a gate electrode in the opening. A first portion of the gate electrode...
7585706 Method of fabricating a semiconductor device  
The semiconductor device of this invention includes an active region formed from a group III nitride semiconductor grown on a substrate and an insulating oxide film formed in a peripheral portion...
7569442 High speed lateral heterojunction MISFETS realized by 2-dimensional bandgap engineering and methods thereof  
A method for forming and the structure of a strained lateral channel of a field effect transistor, a field effect transistor and CMOS circuitry is described incorporating a drain, body and source...
7560322 Method of making a semiconductor structure for high power semiconductor devices  
A substrate arrangement for high power semiconductor devices includes a SiC wafer having a Si layer deposited on a surface of the SiC wafer. An SOI structure having a first layer of Si, an...
7553691 Method and apparatus of multiplejunction solar cell structure with high band gap heterojunction middle cell  
A method and a multijunction solar device having a high band gap heterojunction middle solar cell are disclosed. In one embodiment, a triple-junction solar device includes bottom, middle, and top...
7550783 Wide bandgap HEMTs with source connected field plates  
A HEMT comprising a plurality of active semiconductor layers formed on a substrate. Source electrode, drain electrode, and gate are formed in electrical contact with the plurality of active layers....
7541232 Method for fabrication of devices in a multi-layer structure  
A method for fabricating devices in a multi-layer structure adapted for the formation of enhancement mode high electron mobility transistors, depletion mode high electron mobility transistors, and...
7534710 Coupled quantum well devices (CQWD) containing two or more direct selective contacts and methods of making same  
The present invention relates to a device structure that contains two or more conducting layers, two peripheral insulating layers, one or more intermediate insulating layers, and two or more...
7531397 Method for manufacturing a semiconductor device on GAN substrate having surface bidirectionally inclined toward <1-100> and <11-20> directions relative to {0001} crystal planes  
A semiconductor substrate encompasses a GaN substrate and a single-crystal layer formed of III-V nitride compound semiconductor epitaxially grown on the GaN substrate. The GaN substrate has a...
7531396 Method of manufacturing semiconductor device  
A method of manufacturing a semiconductor device is disclosed. The semiconductor device includes a semiconductor body of a first conductivity type, a hetero semiconductor region adjacent to one...
7498213 Methods of fabricating a semiconductor substrate for reducing wafer warpage  
Methods of fabricating a semiconductor device can include forming at least one layer on a first and a second side of a semiconductor substrate. Portions of the at least one layer may be removed on...
7485512 Method of manufacturing an adaptive AIGaN buffer layer  
A method of compensating resistivity of a near-surface region of a substrate includes epitaxially growing a buffer layer on the substrate, wherein the buffer is grown as having a dopant...
7485503 Dielectric interface for group III-V semiconductor device  
A Group III-V Semiconductor device and method of fabrication is described. A high-k dielectric is interfaced to a confinement region by a chalcogenide region.
7459731 Device containing isolation regions with threading dislocations  
An article of manufacture includes a substrate, a relaxed buffer layer disposed on the substrate, and a plurality of isolation regions formed in the relaxed buffer layer. The isolation regions...
7459356 High voltage GaN-based transistor structure  
The present invention relates to a high voltage and high power gallium nitride (GaN) transistor structure. In general, the GaN transistor structure includes a sub-buffer layer that serves to...
7459718 Field effect transistor  
A FET includes a nitride semiconductor in which leak current is reduced and breakdown voltage is improved. The FET is formed from a substrate, a buffer layer made of a nitride semiconductor, a...
7456443 Transistors having buried n-type and p-type regions beneath the source region  
High electron mobility transistors are provided that include a non-uniform aluminum concentration AlGaN based cap layer having a high aluminum concentration adjacent a surface of the cap layer that...
7432142 Methods of fabricating nitride-based transistors having regrown ohmic contact regions  
Transistor fabrication includes forming a nitride-based channel layer on a substrate, forming a barrier layer on the nitride-based channel layer, forming a contact recess in the barrier layer to...
7425488 Method and structure using a pure silicon dioxide hardmask for gate patterning for strained silicon MOS transistors  
A partially completed semiconductor integrated circuit device. The device has a semiconductor substrate and a dielectric layer overlying the semiconductor substrate. The device has a gate structure...
7420226 Method for integrating silicon CMOS and AlGaN/GaN wideband amplifiers on engineered substrates  
High-speed silicon CMOS circuits and high-power AlGaN/GaN amplifiers are integrated on the same wafer. A thin layer of high resistivity silicon is bonded on a substrate. Following the bonding, an...
7419892 Semiconductor devices including implanted regions and protective layers and methods of forming the same  
Methods of forming a semiconductor device include forming a protective layer on a semiconductor layer, implanting ions having a first conductivity type through the protective layer into the...
7413958 GaN-based permeable base transistor and method of fabrication  
An etched grooved GaN-based permeable-base transistor structure is disclosed, along with a method for fabrication of same.
7402844 Metal semiconductor field effect transistors (MESFETS) having channels of varying thicknesses and related methods  
A unit cell of a metal-semiconductor field-effect transistor (MESFET) is provided. The unit cell includes a MESFET having a source, a drain and a gate. The gate is between the source and the drain...
7393735 Structure for and method of fabricating a high-mobility field-effect transistor  
A structure and method of fabricating a high-mobility semiconductor layer structure and field-effect transistor (MODFET) that includes a high-mobility conducting channel, while at the same time,...
7364988 Method of manufacturing gallium nitride based high-electron mobility devices  
A method of manufacturing a heterojunction device includes forming a first layer of p-type aluminum gallium nitride; forming a second layer of undoped gallium nitride on the first layer; and...
7361536 Method of fabrication of a field effect transistor with materialistically different two etch stop layers in an enhanced mode transistor and an depletion mode transistor  
A semiconductor structure a structure with an enhancement mode transistor device disposed in a first region and depletion mode transistor device disposed in a laterally displaced second region. The...
7352017 Nitride semiconductor device and manufacturing method thereof  
A nitride semiconductor device enabiling to supress current collapse and manufacturing method thereof including a III-V group nitride semiconductor layer formed of III group elements includes at...
7338826 Silicon nitride passivation with ammonia plasma pretreatment for improving reliability of AlGaN/GaN HEMTs  
This invention pertains to an electronic device and to a method for making it. The device is a heterojunction transistor, particularly a high electron mobility transistor, characterized by presence...
7321132 Multi-layer structure for use in the fabrication of integrated circuit devices and methods for fabrication of same  
A multi-layer structure for use in the fabrication of integrated circuit devices is adapted for the formation of enhancement mode high electron mobility transistors, depletion mode high electron...
7303968 Semiconductor device and method having multiple subcollectors formed on a common wafer  
A semiconductor device and a method of fabricating a semiconductor device having multiple subcollectors which are formed in a common wafer, in order to provide multiple structures having different...
7297580 Methods of fabricating transistors having buried p-type layers beneath the source region  
The present invention provides a unit cell of a metal-semiconductor field-effect transistor (MESFET). The unit cell of the MESFET includes a source, a drain and a gate. The gate is disposed between...
7297589 Transistor device and method  
A method for making a heterojunction bipolar transistor includes the following steps: forming a heterojunction bipolar transistor by depositing, on a substrate, subcollector, collector, base, and...
7294540 Method for manufacturing a nitride based semiconductor device  
Provided is a nitride-based semiconductor device in which a SAW filter and a HFET are integrated on a single substrate, as well as a method for manufacturing the same. The nitride-based...
7291873 High electron mobility epitaxial substrate  
A compound semiconductor epitaxial substrate for use in a strain channel high electron mobility field effect transistor, comprising an InGaAs layer as a strain channel layer 6 and AlGaAs layers...
7285806 Semiconductor device having an active region formed from group III nitride  
The semiconductor device of this invention includes an active region formed from a group III nitride semiconductor grown on a substrate and an insulating oxide film formed in a peripheral portion...
7268027 Method of manufacturing photoreceiver  
Disclosed is a method of manufacturing a photoreceiver, including sequentially laminating a buffer layer, a channel layer, a barrier layer, and a cap layer on a substrate; forming a mesa for HEMT...
7247893 Non-planar nitride-based heterostructure field effect transistor  
A method for fabricating a non-planar heterostructure field effect transistor using group III-nitride materials with consistent repeatable results is disclosed. The method provides a substrate on...
7238560 Methods of fabricating nitride-based transistors with a cap layer and a recessed gate  
An anneal of a gate recess prior to formation of a gate contact, such as a Schottky contact, may reduce gate leakage and/or provide a high quality gate contact in a semiconductor device, such as a...
7226818 High performance field effect transistors comprising carbon nanotubes fabricated using solution based processing  
The present invention is directed toward field effect transistors (FETs) and thin film transistors (TFTs) comprising carbon nanotubes (CNTs) and to methods of making such devices using...
7214325 Method of fabricating ohmic contact on n-type gallium nitride (GaN) of room temperature by plasma surface treatment  
Forming low contract resistance metal contacts on GaN films by treating a GaN surface using a chlorine gas Inductively Coupled Plasma (ICP) etch process before the metal contacts are formed....
7208753 Enhancement mode single electron transistor  
A transistor having a bottom dielectric layer, a first layer, a second layer, a top dielectric layer, and a gate electrode. The first layer and the second layer form a composite quantum well...
7157299 Nanofabrication of InAs/A1Sb heterostructures  
A heterostructure comprising: a buffer layer; a bottom barrier layer formed on the buffer layer; a quantum well layer formed on the bottom barrier layer; a top barrier layer formed on the quantum...
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