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9041063 High electron mobility transistors and methods of manufacturing the same  
High electron mobility transistors (HEMTs) and methods of manufacturing the same. A HEMT may include a source electrode, a gate electrode, a drain electrode, a channel formation layer including at...
9029986 Transistors with dual layer passivation  
Semiconductor devices are provided with dual passivation layers. A semiconductor layer is formed on a substrate and covered by a first passivation layer (PL-1). PL-1 and part of the semiconductor...
9018635 Integrated electronic device with edge-termination structure and manufacturing method thereof  
An embodiment of an integrated electronic device formed in a semiconductor body delimited by a lateral surface, which includes: a substrate made of a first semiconductor material; a first...
9006053 Method of making MOSFET integrated with schottky diode with simplified one-time top-contact trench etching  
Method for fabricating MOSFET integrated with Schottky diode (MOSFET/SKY) is disclosed. Gate trench is formed in an epitaxial layer overlaying semiconductor substrate, gate material is deposited...
9000496 Source bridge for cooling and/or external connection  
A FET includes elongated, mutually parallel source regions separated by gate and drain regions. Conductive bridges extend over the gate and drain regions and not in electrical contact therewith to...
8999780 Non-uniform two-dimensional electron gas profile in III-nitride HEMT devices  
A HEMT device has a substrate; a buffer layer disposed above the substrate; a carrier supplying layer disposed above the buffer layer; a gate element penetrating the carrier supplying layer; and a...
8981384 Semiconductor device and method for manufacturing same  
There are provided a high-quality semiconductor device having stable characteristics and a method for manufacturing such a semiconductor device. The semiconductor device includes a substrate...
8975664 Group III-nitride transistor using a regrown structure  
Embodiments of the present disclosure describe apparatuses, methods, and systems of an integrated circuit (IC) device. The IC device may include a buffer layer disposed on a substrate, the buffer...
8969919 Field-effect transistor  
A field-effect transistor includes a carrier transport layer made of nitride semiconductor, a gate electrode having first and second sidewall surfaces on first and second sides, respectively, an...
8951901 Superior integrity of a high-K gate stack by forming a controlled undercut on the basis of a wet chemistry  
In sophisticated semiconductor devices, the encapsulation of sensitive gate materials, such as a high-k dielectric material and a metal-containing electrode material, which are provided in an...
8946012 Method of forming a semiconductor structure  
A method of forming a semiconductor structure having a substrate is disclosed. The semiconductor structure includes a first layer formed in contact with the substrate. The first layer made of a...
8941118 Normally-off III-nitride transistors with high threshold-voltage and low on-resistance  
A III-nitride transistor includes a III-nitride channel layer, a barrier layer over the channel layer, the barrier layer having a thickness of 1 to 10 nanometers, a dielectric layer on top of the...
8940593 Enhancement-mode GaN MOSFET with low leakage current and improved reliability  
An enhancement-mode GaN MOSFET with a low leakage current and an improved reliability is formed by utilizing a SiO2/Si3N4 gate insulation layer on an AlGaN (or InAlGaN) barrier layer. The Si3N4...
8941093 Compound semiconductor device and manufacturing method thereof  
A first electrode, an intrinsic first compound semiconductor layer over the first electrode, a second compound semiconductor layer whose band gap is smaller than that of the first compound...
8933489 Compound semiconductor device and manufacturing method of the same  
An AlGaN/GaN.HEMT includes, a compound semiconductor lamination structure; a p-type semiconductor layer formed on the compound semiconductor lamination structure; and a gate electrode formed on...
8927354 Antimonide-based compound semiconductor with titanium tungsten stack  
An apparatus in one example comprises an antimonide-based compound semiconductor (ABCS) stack, an upper barrier layer formed on the ABCS stack, and a gate stack formed on the upper barrier layer....
8916437 Insulated gate field effect transistor having passivated schottky barriers to the channel  
A transistor having at least one passivated Schottky barrier to a channel includes an insulated gate structure on a p-type substrate in which the channel is located beneath the insulated gate...
8916459 Compound semiconductor device with mesa structure  
A compound semiconductor device having mesa-shaped element region, and excellent characteristics are provided. The compound semiconductor device has: an InP substrate; an epitaxial lamination mesa...
8912573 Semiconductor device containing HEMT and MISFET and method of forming the same  
A semiconductor structure with a MISFET and a HEMT region includes a first III-V compound layer. A second III-V compound layer is disposed on the first III-V compound layer and is different from...
8895421 III-N device structures and methods  
A III-N device is described with a III-N layer, an electrode thereon, a passivation layer adjacent the III-N layer and electrode, a thick insulating layer adjacent the passivation layer and...
8890212 Normally-off high electron mobility transistor  
According to example embodiments, a normally-off high electron mobility transistor (HEMT) includes: a channel layer having a first nitride semiconductor, a channel supply layer on the channel...
8890208 Group III nitride epitaxial substrate for semiconductor device, semiconductor device, and process for producing group III nitride epitaxial substrate for semiconductor device  
Provided is an epitaxial substrate capable of manufacturing a HEMT device that has excellent two-dimensional electron gas characteristics and is capable of performing normally-off operation. A...
8883580 Trench metal oxide semiconductor with recessed trench material and remote contacts  
Remote contacts to the polysilicon regions of a trench metal oxide semiconductor (MOS) barrier Schottky (TMBS) device, as well as to the polysilicon regions of a MOS field effect transistor...
8872235 Integrated Schottky diode for HEMTs  
An embodiment of a transistor device includes a compound semiconductor material on a semiconductor carrier and a source region and a drain region spaced apart from each other in the compound...
8872226 Group III nitride epitaxial substrate for semiconductor device, semiconductor device, and process for producing group III nitride epitaxial substrate for semiconductor device  
Provided is an epitaxial substrate having excellent two-dimensional electron gas characteristics and reduced internal stress due to strains. A channel layer is formed of a first group III nitride...
8866193 Method for fabricating a monolithic integrated composite group III-V and group IV semiconductor device  
According to one disclosed embodiment, a monolithic vertically integrated composite device comprises a double sided semiconductor substrate having first and second sides, a group IV semiconductor...
8859354 Transistors and fabrication method thereof  
A method is provided for fabricating a transistor. The method includes providing a semiconductor substrate, and forming a quantum well layer on the semiconductor substrate. The method also...
8860087 Nitride semiconductor device and manufacturing method thereof  
The present invention relates to a nitride semiconductor device and a manufacturing method thereof. According to one aspect of the present invention, a nitride semiconductor device including: a...
8841709 JFET device and method of manufacturing the same  
A disclosed semiconductor device includes a semiconductor deposition layer formed over an insulation structure and above a substrate. The device includes a gate formed over a contact region...
8815666 Power device and method for manufacturing the same  
Provided is a power device. The power device may include a two-dimensional electron gas (2-DEG) layer in a portion corresponding to a gate electrode pattern since a second nitride layer is further...
8816408 Compound semiconductor device and manufacturing method thereof  
A compound semiconductor device includes a compound semiconductor laminated structure; a source electrode, a drain electrode, and a gate electrode formed over the compound semiconductor laminated...
8809136 Semiconductor device and method for manufacturing the same  
A semiconductor device having a source electrode and a drain electrode formed over a semiconductor substrate, a gate electrode formed over the semiconductor substrate and disposed between the...
8796738 Group III-V device structure having a selectively reduced impurity concentration  
There are disclosed herein various implementations of a semiconductor structure and method. The semiconductor structure comprises a substrate, a transition body over the substrate, and a group...
8791504 Substrate breakdown voltage improvement for group III-nitride on a silicon substrate  
A circuit structure includes a substrate, a nucleation layer of undoped aluminum nitride, a graded buffer layer comprising aluminum, gallium, nitrogen, one of silicon and oxygen, and a p-type...
8778747 Regrown Schottky structures for GAN HEMT devices  
Embodiments include but are not limited to apparatuses and systems including a buffer layer, a group III-V layer over the buffer layer, a source contact and a drain contact on the group III-V...
8765554 Compound semiconductor device and method for manufacturing the same  
A gate electrode is formed so as to embed an electrode material in a recess for an electrode, which has been formed in a structure of stacked compound semiconductors, through a gate insulation...
8759169 Method for producing silicon semiconductor wafers comprising a layer for integrating III-V semiconductor components  
The invention relates to a method for producing silicon semiconductor wafers and components having layer structures of III-V layers for integrating III-V semiconductor components. The method...
8748268 Method of making MOSFET integrated with schottky diode with simplified one-time top-contact trench etching  
Method for fabricating MOSFET integrated with Schottky diode (MOSFET/SKY) is disclosed. Gate trench is formed in an epitaxial layer overlaying semiconductor substrate, gate material is deposited...
8748269 Quantum-well-based semiconductor devices  
Quantum-well-based semiconductor devices and methods of forming quantum-well-based semiconductor devices are described. A method includes providing a hetero-structure disposed above a substrate...
8748303 Method for fabricating semiconductor device  
A method for fabricating a semiconductor device includes forming ohmic electrodes on a source region and a drain region of a nitride semiconductor layer, forming a low-resistance layer between an...
8748244 Enhancement and depletion mode GaN HMETs on the same substrate  
The present invention relates to fabrication of enhancement mode and depletion mode High Electron Mobility Field Effect Transistors on the same die separated by as little as 10 nm. The fabrication...
8741705 Metal-oxide-semiconductor high electron mobility transistors and methods of fabrication  
A method of fabricating Group III-V semiconductor metal oxide semiconductor (MOS) and III-V MOS devices are described.
8741701 Fin structure formation including partial spacer removal  
A method of forming a semiconductor device includes forming a mandrel on top of a substrate; forming a first spacer adjacent to the mandrel on top of the substrate; forming a cut mask over the...
8735940 Semiconductor device and method for manufacturing the same  
There are provided a semiconductor device and a method for manufacturing the same. The semiconductor device according to the present invention includes a base substrate; a semiconductor layer that...
8728884 Enhancement mode normally-off gallium nitride heterostructure field effect transistor  
A method of fabricating a normally “off” GaN heterostructure field effect transistor having a source and a drain including depositing a passivation layer patterned to cover a channel region...
8722474 Semiconductor device including stepped gate electrode and fabrication method thereof  
Disclosed are a semiconductor device including a stepped gate electrode and a method of fabricating the semiconductor device. The semiconductor device according to an exemplary embodiment of the...
8710551 High electron mobility transistor and manufacturing method thereof  
The present invention discloses a high electron mobility transistor (HEMT) and a manufacturing method thereof. The HEMT includes a semiconductor layer, a barrier layer on the semiconductor layer,...
8709886 Compound semiconductor device and manufacturing method therefor  
An HEMT includes, on an SiC substrate, a compound semiconductor layer, a silicon nitride (SiN) protective film having an opening and covering the compound semiconductor layer, and a gate electrode...
8698201 Gate metallization methods for self-aligned sidewall gate GaN HEMT  
A method for fabricating a gate structure for a field effect transistor having a buffer layer on a substrate, a channel layer and a barrier layer over the channel layer includes forming a gate of...
8697505 Method of forming a semiconductor structure  
A semiconductor structure is disclosed. The semiconductor structure includes a first layer. A second layer is disposed on the first layer and different from the first layer in composition. An...

Matches 1 - 50 out of 386 1 2 3 4 5 6 7 8 >