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7622370 |
Process and system for laser crystallization processing of film regions on a substrate to minimize edge areas, and a structure of such film regions
A process and system for processing a thin film sample are provided. In particular, a beam generator can be controlled to emit at least one beam pulse. The beam pulse is then masked to produce at...
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7618904 |
Method of manufacturing a semiconductor device
When a laser beam is irradiated onto a semiconductor film, a steep temperature gradient is produced between a substrate and the semiconductor film. For this reason, the semiconductor film...
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7618882 |
Method for manufacturing semiconductor device and laser irradiation apparatus
It is an object to achieve continuous crystal growth without optical interference using a compact laser irradiation apparatus. A megahertz laser beam is split and combined to crystallize a...
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7618852 |
Phase transition method of amorphous material using cap layer
The present invention provides a phase transition method of an amorphous material, comprising steps of: depositing the amorphous material on a dielectric substrate; forming a cap layer on the...
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7615502 |
Laser anneal of vertically oriented semiconductor structures while maintaining a dopant profile
A method to laser anneal a silicon stack (or a silicon-rich alloy) including a heavily doped region buried beneath an undoped or lightly doped region is disclosed. By F selecting laser energy at a...
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7615424 |
Laser irradiation apparatus and method for manufacturing semiconductor device using the laser irradiation apparatus
An object of the present invention is to provide a laser irradiation method being able to control the irradiation position of the laser beam accurately compared with the conventional irradiation...
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7615384 |
Semiconductor display device and method of manufacturing the same
A method of manufacturing a semiconductor device with the use of a laser crystallization method is provided which can prevent grain boundaries from being formed in a channel forming region of a TFT...
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7612379 |
Multi-gate thin film transistor having recrystallized channel regions with different grain sizes
An image display system has a multi-gate thin film transistor (TFT) disposed on a transparent substrate. The multi-gate TFT includes a silicon film layer, a first electrode and a reflecting layer....
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7611933 |
Process for manufacturing a thin-film transistor (TFT) device and TFT device manufactured by the process
A process for manufacturing a thin-film transistor device includes forming a dielectric insulation layer on a substrate, forming an amorphous silicon layer on the dielectric insulation layer,...
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7611932 |
Method of manufacturing a thin film transistor
A method of manufacturing a thin film transistor is provided. The method includes forming an amorphous silicon layer on a substrate, forming a source region, a drain region, and a region of a...
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7611807 |
Method for forming poly-silicon film
In the present invention, a method is used for forming a poly-silicon film that uses sequential lateral solidification (SLS) with two laser irradiations using a mask for patterning the laser beam...
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7608869 |
Thin film transistor and method of fabricating the same
A thin film transistor and a method of fabricating the same are disclosed. The method includes: sequentially depositing an amorphous silicon layer, a capping layer, and a metal catalyst layer;...
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7608527 |
Laser irradiation method and method for manufacturing crystalline semiconductor film
Even when the laser irradiation is performed under the same condition with the energy distribution of the beam spot shaped as appropriate, the energy given to the irradiated surface is not yet...
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7606064 |
Method for reducing a reset current for resetting a portion of a phase change material in a memory cell of a phase change memory device and the phase change memory device
According to one embodiment, at least a portion of the phase change material including a first crystalline phase is converted to one of a second crystalline phase and an amorphous phase. The second...
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7605029 |
Method of manufacturing semiconductor device
According to the present invention, an impurity region, to which a rare gas element (also called a rare gas) and one kind or a plurality of kinds of elements selected from the group consisting of...
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7601984 |
Field effect transistor with amorphous oxide active layer containing microcrystals and gate electrode opposed to active layer through gate insulator
A novel amorphous oxide applicable, for example, to an active layer of a TFT is provided. The amorphous oxide comprises microcrystals.
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7601565 |
Thin film transistor and method of fabricating the same
A thin film transistor and method of fabricating the same are provided. In the thin film transistor, a seed or a grain boundary exists in a semiconductor layer pattern but not in a junction region....
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7588976 |
Display device, method of production of the same, and projection type display device
A display device able to raise a light resistance of pixel transistors without depending upon a light shielding structure and a method of production of same, wherein an average crystal grain size...
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7585715 |
Semiconductor device and process for fabricating the same
A semiconductor device comprising at least two thin film transistors on a substrate having an insulating surface thereon, provided that the thin film transistors are isolated by oxidizing the outer...
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7585709 |
Display panels and fabrication methods thereof
A display panel including a pixel array region. The pixel array region includes a plurality of pixel cells disposed in a matrix configuration. Each pixel cell has an active device. A relative...
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7575985 |
Method of fabricating semiconductor device
In a manufacturing process of a semiconductor device using a substrate having low heat resistance, such as a glass substrate, there is provided a method of efficiently carrying out crystallization...
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7569441 |
Laser irradiation apparatus, laser irradiation method, and method for manufacturing semiconductor device
An aggregation of crystals extending long in the scanning direction (a long crystal grain region) is formed when a continuous wave laser oscillator (a CW laser oscillator) is employed for annealing...
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7569440 |
Method of manufacturing a semiconductor device and manufacturing system thereof
A method of manufacturing a semiconductor device, comprises the steps of: forming an amorphous silicon film on a substrate having an insulating surface; processing said amorphous silicon film by...
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7569439 |
Thin film semiconductor device, production process and information displays
A thin film semiconductor device has a semiconductor thin film with a film thickness of 200 nm or less. The semiconductor thin film is formed over a dielectric substrate with a warping point of...
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7569307 |
Laser mask and crystallization method using the same
A laser mask includes a mask pattern with edges having inverted shapes to alleviate the effects of diffraction of laser beams to reduce overlap regions such that crystallization characteristics are...
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7566625 |
Semiconductor device manufacturing method, heat treatment apparatus, and heat treatment method
For manufacture of a semiconductor device using a low heat resistant substrate such as a glass substrate, a method of heat treatment for activating an impurity element that is used to dope a...
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7566602 |
Methods of forming single crystalline layers and methods of manufacturing semiconductor devices having such layers
In a method of forming a single crystalline semiconductor layer, an amorphous layer may be formed on a seed layer that includes a single crystalline material. The single crystalline layer may be...
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7563661 |
Crystallization method for semiconductor film, manufacturing method for semiconductor device, and laser irradiation apparatus
A semiconductor film formed over a substrate is irradiated by a first laser beam which is incident on a bottom surface of the substrate at an angle and by a second laser beam which is incident on...
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7563660 |
Silicon film, crystalline film and method for manufacturing the same
A silicon film, crystalline film and method for manufacturing the same are provided. The silicon film and/or crystalline film may be an epitaxy-formed layer. A method for manufacturing a silicon...
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7563659 |
Method of fabricating poly-crystalline silicon thin film and method of fabricating transistor using the same
A method of fabricating a poly-Si thin film and a method of fabricating a poly-Si TFT using the same are provided. The poly-Si thin film is formed at a low temperature using inductively coupled...
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7563658 |
Method for manufacturing semiconductor device
The present invention relates to a method for manufacturing a semiconductor film, including the steps of forming a transparent conductive film, forming a first conductive film over the transparent...
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7560365 |
Method of semiconductor thin film crystallization and semiconductor device fabrication
A method for fabricating a semiconductor device includes providing a substrate, forming an amorphous silicon layer over the substrate, forming a heat retaining layer on the amorphous silicon layer,...
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7560321 |
Crystallization method, thin film transistor manufacturing method, thin film transistor, display, and semiconductor device
According to a crystallization method, in the crystallization by irradiating a non-single semiconductor thin film of 40 to 100 nm provided on an insulation substrate with a laser light, a light...
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7557412 |
Semiconductor device and method of manufacturing the same
The sizes of crystal masses are made to be a uniform in a crystalline silicon film obtained by a thermal crystallization method in which a metal element is used. An amorphous silicon film to be...
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7557020 |
Method for fabricating thin film transistor using metal catalyst layer
A method of fabricating a thin film transistor can include forming a metal catalyst layer on a substrate on which an amorphous silicon layer and a capping layer are formed. The metal catalyst may...
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7556993 |
Thin film semiconductor device, polycrystalline semiconductor thin film production process and production apparatus
A process for producing an image display device using a thin film semiconductor device is provided which includes forming a polycrystalline semiconductor thin film on a substrate. A substantially...
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7553716 |
Method for manufacturing a semiconductor thin film
A little amount of nickel is introduced into an amorphous silicon film formed on a glass substrate to crystallize the amorphous silicon film by heating. In this situation, nickel elements remain in...
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7553715 |
Crystallization method and apparatus thereof
A method of crystallizing an amorphous silicon thin film on a substrate includes loading a substrate onto a stage, the substrate having an amorphous silicon thin film thereon and having first and...
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7553714 |
Method of manufacturing thin film transistor having polycrystalline silicon layer, thin film transistor manufactured using the method and flat panel display comprising the thin film transistor
A method for manufacturing a thin film transistor having a more uniform threshold voltage, and a flat panel display device that includes the thin film transistor. The method includes forming an...
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7547914 |
Single-crystal layer on a dielectric layer
The process relates to the production of a layer of a single-crystal first material on a second material. The second material has at least one aperture exposing a surface portion of a...
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7547593 |
Method of fabricating semiconductor device
The objective of the invention is to provide a method of fabricating semiconductor device using a laser crystallization method capable of preventing a grain boundary from being formed on the...
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7544584 |
Localized compressive strained semiconductor
One aspect of the present subject matter relates to a method for forming strained semiconductor film. According to an embodiment of the method, a crystalline semiconductor bridge is formed over a...
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7544572 |
Multi-operational mode transistor with multiple-channel device structure
A multiple operating mode transistor is provided in which multiple channels having different respective operational characteristics are employed. Multiple channels have threshold voltages that are...
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7544550 |
Method of fabricating semiconductor device and semiconductor fabricated by the same method
A semiconductor device and method of fabricating the same are provided. The method includes: depositing a silicon layer containing amorphous silicon on a substrate; defining source and drain...
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7544549 |
Method for manufacturing semiconductor device and MOS field effect transistor
Upon manufacture of a semiconductor device provided with a source region and a drain region formed by activating, through anneal, an n-type first dopant ion-implanted in a p-type device forming...
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7541615 |
Display device including thin film transistors
A display including a driving substrate is provided. Arrayed on the driving substrate is a plurality of pixel electrodes and thin film transistors for driving the pixel electrodes. Each thin film...
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7541230 |
Method and apparatus for crystallizing semiconductor with laser beams
Laser beams emitted by a plurality of laser sources are divided into a plurality of sub-beams, which are irradiated onto selected portions of an amorphous semiconductor on a substrate to...
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7541228 |
Semiconductor device, method of manufacturing the same, and method of designing the same
An object of the present invention is to provide a semiconductor device formed by laser crystallization by which formation of grain boundaries in the TFT channel formation region can be avoided,...
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7534670 |
Semiconductor device and manufacturing method of the same
Provided is a technique of effectively removing a metallic element that has catalytic action in terms of the crystallization of a semiconductor film and remains in a semiconductor film obtained...
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7528023 |
Apparatus for crystallizing semiconductor with laser beams
Laser beams emitted by a plurality of laser sources are divided into a plurality of sub-beams, which are irradiated onto selected portions of an amorphous semiconductor on a substrate to...
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