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7622338 Method for manufacturing semiconductor device  
The present invention provides a method for forming a semiconductor region having a desired shape, and also provides a method for manufacturing a semiconductor device with few variations. Moreover,...
7605039 Multiple-gate MOS transistor using Si substrate and method of manufacturing the same  
Provided are a multiple-gate MOS (metal oxide semiconductor) transistor and a method of manufacturing the same. The transistor includes a single crystalline active region having a channel region...
7510927 LOCOS isolation for fully-depleted SOI devices  
The present invention discloses a method including: providing a substrate; forming a buried oxide layer over the substrate; forming a thin silicon body layer over the buried oxide layer, the thin...
7510919 Anchoring, by lateral oxidizing, of patterns of a thin film to prevent the dewetting phenomenon  
The invention relates to a thin film having a thickness of less than 10 nm, made of oxidizable semi-conductor material and patterned in the form of patterns. To prevent the dewetting phenomenon of...
7504291 MOS transistor on an SOI substrate with a body contact and a gate insulating film with variable thickness  
It is an object to provide an SOI device capable of carrying out body fixation and implementing a quick and stable operation. A gate insulating film ( 11 ) having a thickness of 1 to 5 nm is...
7425480 Semiconductor device and method of manufacture thereof  
A method of manufacturing a MOS transistor incorporating a silicon oxide film serving as a gate insulating film and containing nitrogen and a polycrystalline silicon film serving as a gate...
7381631 Use of expanding material oxides for nano-fabrication  
This invention relates to a method of fabricating nano-dimensional structures, comprising: depositing at least one deformable material upon a substrate such that the material includes at least one...
7344930 Semiconductor device and manufacturing method thereof  
To obtain a semiconductor device containing TFTs of different, suitable properties as display pixel TFTs and high-voltage, driver-circuit TFTs, the semiconductor device of the present invention...
7303946 Method of manufacturing a semiconductor device using an oxidation process  
A method of manufacturing a MOS transistor incorporating a silicon oxide film serving as a gate insulating film and containing nitrogen and a polycrystalline silicon film serving as a gate...
7288447 Semiconductor device having trench isolation for differential stress and method therefor  
A semiconductor device has trenches for defining active regions. After a thin diffusion barrier is deposited in the trenches, some of the trenches are selectively etched to leave different areas in...
7196383 Thin film oxide interface  
An oxide interface and a method for fabricating an oxide interface are provided. The method comprises forming a silicon layer and an oxide layer overlying the silicon layer. The oxide layer is...
7183143 Method for forming nitrided tunnel oxide layer  
A method for forming a nitrided tunnel oxide layer is described. A silicon oxide layer as a tunnel oxide layer is formed on a semiconductor substrate, and a plasma nitridation process is performed...
7141459 Silicon-on-insulator ULSI devices with multiple silicon film thicknesses  
A method of forming a multiple-thickness semiconductor-on-insulator, comprising the following steps. A wafer is provided comprising a semiconductor film (having at least two regions) overlying a...
7064018 Methods for fabricating three dimensional integrated circuits  
A method of forming a semiconductor device includes fabricating digital circuits comprising a programmable logic circuit on a substrate; selectively fabricating either a memory circuit or a...
7061029 High-voltage device structure  
A high-voltage device structure disposed in a substrate of a first conductivity type includes a first well and a second well each of a second conductivity type, a source diffusion region and a...
7023015 Thin-film semiconductor device and liquid crystal display  
A thin-film semiconductor device is provided including a plurality of thin-film transistors (TFT) having different driving voltages formed on an glass substrate, wherein a gate insulator electric...
6902960 Oxide interface and a method for fabricating oxide thin films  
An oxide interface and a method for fabricating an oxide interface are provided. The method comprises forming a silicon layer and an oxide layer overlying the silicon layer. The oxide layer is...
6867074 Method of fabricating a polysilicon layer  
A method of fabrication a polysilicon layer is provided. A substrate is provided and then a buffer layer having a plurality of trenches thereon is formed over the substrate. Thereafter, an...
6812077 Method for patterning narrow gate lines  
Patterning of a gate line is terminated prior to etching completely through the conductive layer from which it is patterned. Surfaces of the conductive layer are then reacted in a reactive...
6709908 Methods for making semiconductor devices  
Certain embodiments relate to methods for making a semiconductor device that inhibit the formation of a parasitic device. A method for making a semiconductor device includes a delimiting step and a...
6667197 Method for differential oxidation rate reduction for n-type and p-type materials  
A method of forming a substantially uniform oxide film over surfaces with different level of doping and/or different dopant type is disclosed. In one aspect, a method for forming a uniform oxide...
6664146 Integration of fully depleted and partially depleted field effect transistors formed in SOI technology  
For fabricating field effect transistors with a semiconductor substrate in SOI (semiconductor on insulator) technology, a first hardmask is formed on a first area of the semiconductor substrate,...
6656778 Passivation structure for flash memory and method for fabricating same  
A passivation structure for a semiconductor device includes a high ultraviolet transmittance silicon nitride (UV-SiN) layer. This UV-SiN layer substantially conformally overlies a plurality of top...
6551867 Non-volatile semiconductor memory device and method for manufacturing the same  
A non-volatile semiconductor memory device includes an interlayer dielectric film 9, 19 flattened by etching back an SOG film. In the non-volatile semiconductor memory device, a barrier film of a...
6537927 Apparatus and method for heat-treating semiconductor substrate  
A method and apparatus for heat-treating a semiconductor substrate to heat different areas of the substrate at different temperatures. The method includes using an apparatus having a chamber of a...
6387741 Manufacturing a semiconductor device with isolated circuit-element formation layers of different thicknesses  
Silicon layers 2 a , 2 b comprised of different thicknesses are formed concurrently so as to be isolated from each other while a silicon oxide layer 1 serving as a foundation layer is...
6346486 Transistor device and method of forming the same  
A crystalline silicon thin film transistor having an LDD (lightly doped drain) structure and a process for fabricating the same, which comprises introducing a catalyst element for accelerating...
6335267 Semiconductor substrate and method of fabricating semiconductor device  
A semiconductor substrate and a method of fabricating a semiconductor device are provided. An oxide film ( 13 ) is formed by oxidizing an edge section and a lower major surface of an SOI substrate...
6306692 Coplanar type polysilicon thin film transistor and method of manufacturing the same  
The present invention discloses a method of manufacturing a thin film transistor, including: depositing an amorphous silicon layer, an insulating layer, and a gate metal layer on a substrate...
6271065 Method directed to the manufacture of an SOI device  
On an insulating film a mesa-isolation silicon layer is formed, in which a channel region and source/drain regions ar included. A gate insulating film and a conducting layer as a part of a gate...
6265251 Method to fabricate a thick oxide MOS transistor for electrostatic discharge protection in an STI process  
A new method of forming a thick oxide MOS transistor for electrostatic discharge protection in a standard sub-micron STI CMOS process for an integrated circuit device has been achieved. A first...
6124153 Method for manufacturing a polysilicon TFT with a variable thickness gate oxide  
A method for manufacturing a polysilicon thin film transistor (TFT) according to the present invention reduces the electric field near the drain junction by varying partially the thickness of a...
6096583 Semiconductor device and manufacturing method thereof  
In forming an element isolating region in a silicon semiconductor layer of an SOI substrate, a silicon nitride film of a predetermined thickness is deposited over an oxide film formed on a SOI...
6096582 Method of making a semiconductor device  
A method of making a semiconductor device is disclosed in which the device has an insulated gate transistor in which source and drain regions are provided in a single crystal semiconductor layer...
6060344 Method for producing a semiconductor substrate  
In a method for producing a semiconductor substrate completed through a bonding process for joining a semiconductor wafer to a support substrate by performing heat treatment thereto in a state in...
6034001 Method for etching of silicon carbide semiconductor using selective etching of different conductivity types  
A method for selective conductivity etching of a silicon carbide (SiC) semiconductor includes forming a p-type SiC layer on a substrate layer, forming an n-type SiC layer on the p-type SiC layer,...
6033940 Anodization control for forming offset between semiconductor circuit elements  
A circuit substrate includes a plurality of semiconductor devices including electrodes, a wiring having a plurality of branched portions and mainly formed of a metal material, a terminal for...
5985733 Semiconductor device having a T-shaped field oxide layer and a method for fabricating the same  
A semiconductor device having an adjacent P-well and N-well, such as a complementary metal oxide semiconductor (CMOS) transistor, on a silicon on insulator (SOI) substrate has a latch-up problem...
5915172 Method for manufacturing LCD and TFT  
Method for manufacturing TFTs including steps of forming a control electrode and control electrode line on a substrate, forming insulating film on the control electrode and the control electrode...
5913112 Method of manufacturing an insulated gate field effect semiconductor device having an offset region and/or lightly doped region  
An LDD structure is manufactured to have a desired aspect ratio of the height to the width of a gate electrode. The gate electrode is first deposited on a semiconductor substrate followed by ion...
5904514 Method for producing electrodes of semiconductor device  
A first pair electrodes consisting of an anode to which a plurality of wiring lines to be anodized are connected and a cathode that is opposed to the anode, and a second pair electrodes for...
5807771 Radiation-hard, low power, sub-micron CMOS on a SOI substrate  
A radiation-hard, low-power semiconductor device of the complementary metal-oxide semiconductor (CMOS) type which is fabricated with a sub-micron feature size on a silicon-on-insulator (SOI)...
5792678 Method for fabricating a semiconductor on insulator device  
A semiconductor on insulator structure (50) includes a silicon layer (30) formed on an insulating substrate (20). The silicon layer (30) is partitioned into two sections (32, 34) which are...
5780347 Method of forming polysilicon local interconnects  
A method and apparatus of forming local interconnects in a MOS process deposits a layer of polysilicon over an entire region after several conventional MOS processing steps. The region is then...
5770492 Self-aligned twin well process  
A method is provided for forming planar, self-aligned spaced-apart wells without a high temperature oxidation step to form an ion barrier. The method comprises preparing a substrate with a silicon...
5712173 Method of making semiconductor device with self-aligned insulator  
A semiconductor device having the advantages of an SOI structure without the attendant disadvantages is obtained by implanting oxygen ions using the gate electrode as a mask, and heating to form...
5683918 Method of making semiconductor-on-insulator device with closed-gate electrode  
A body-tied MOSFET (14) is used in a protection circuit (10) of an SOI device (20) where the MOSFET's drain regions (38) lie outside MOSFET's closed-gate electrode (34). Electrical characteristics...
5670389 Semiconductor-on-insulator device having a laterally-graded channel region and method of making  
A silicon-on-insulator semiconductor device (40) having laterally-graded channel regions (23A, 24A) and a method of making the silicon-on-insulator semiconductor device (40). The...
5670388 Method of making contacted body silicon-on-insulator field effect transistor  
Structures and methods are presented for forming a body-substrate connector for an SOI FET. The connector is formed substantially co-aligned with the gate conductor on a side of the device that...
5665613 Method of making semiconductor device having SIMOX structure  
A SIMOX substrate 1 is processed through high temperature oxidation treatment after forming a mask-pattern 3 to shield specified electrodes from oxidation in order to increase partly a thickness of...
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