Match Document Document Title
9030023 Bond pad stack for transistors  
A method for forming bond pads on a semiconductor die includes forming a dielectric stack including a bottom and top dielectric layer having a contact hole therethrough over a bond pad. An outer...
9023694 Body contacted hybrid surface semiconductor-on-insulator devices  
A portion of a top semiconductor layer of a semiconductor-on-insulator (SOI) substrate is patterned into a semiconductor fin having substantially vertical sidewalls. A portion of a body region of...
9018055 Hybrid fin field-effect transistor structures and related methods  
Semiconductor-on-insulator structures facilitate the fabrication of devices, including MOSFETs that are at least partially depleted during operation and FinFETs including bilayer fins and/or...
9006051 Semiconductor device and method for manufacturing the same  
An object is to improve water resistance and reliability of a semiconductor device by reducing the degree of peeling of a film. In a semiconductor device, a first inorganic insulating layer, a...
9006052 Self aligned device with enhanced stress and methods of manufacture  
A method includes forming a stressed Si layer in a trench formed in a stress layer deposited on a substrate. The stressed Si layer forms an active channel region of a device. The method further...
8999775 Method of fabricating pixel structure and pixel structure thereof  
A method for fabricating a pixel structure includes the following steps. A patterned semiconductor layer, an insulation layer, and a patterned metal layer are formed on a substrate sequentially. A...
8999779 Locally raised epitaxy for improved contact by local silicon capping during trench silicide processings  
A low resistance contact to a finFET source/drain can be achieved by forming a defect free surface on which to form such contact. The fins of a finFET can be exposed to epitaxial growth conditions...
8987093 Multigate finFETs with epitaxially-grown merged source/drains  
Method of forming multi-gate finFETs with epitaxially-grown merged source/drains. Embodiments of the invention may include forming a plurality of semiconductor fins joined by a plurality of...
8975124 Thin film transistor, array substrate and preparation method thereof  
One or more embodiments of the disclosed technology provide a thin film transistor, an array substrate and a method for preparing the same. The thin film transistor comprises a base substrate, and...
8969147 Method for manufacturing semiconductor device  
A highly responsive semiconductor device in which the subthreshold swing (S value) is small and reduction in on-current is suppressed is manufactured. A semiconductor layer in which a thickness of...
8969965 Fin-last replacement metal gate FinFET  
FinFET devices and methods for the fabrication thereof are provided. In one aspect, a method for fabricating a FET device includes the following steps. A wafer is provided having an active layer...
8962398 Body contacted hybrid surface semiconductor-on-insulator devices  
A portion of a top semiconductor layer of a semiconductor-on-insulator (SOI) substrate is patterned into a semiconductor fin having substantially vertical sidewalls. A portion of a body region of...
8963251 Semiconductor device with strain technique  
The present disclosure provides a semiconductor device. The semiconductor device includes a substrate, a fin structure disposed over the substrate in the gate region. The fin structure includes a...
8956929 Method for manufacturing semiconductor device  
In a semiconductor device including a transistor in which an oxide semiconductor layer, a gate insulating layer, and a gate electrode layer on side surfaces of which sidewall insulating layers are...
8956942 Method of forming a fully substrate-isolated FinFET transistor  
Channel-to-substrate leakage in a FinFET device is prevented by inserting an insulating layer between the semiconducting channel (fin) and the substrate during fabrication of the device....
8951850 FinFET formed over dielectric  
A method for semiconductor fabrication includes patterning one or more mandrels over a semiconductor substrate, the one or more mandrels having dielectric material formed therebetween. A...
8937340 Silicon on insulator and thin film transistor bandgap engineered split gate memory  
Memory cells comprising thin film transistor, stacked arrays, employing bandgap engineered tunneling layers in a junction free, NAND configuration. The cells comprise a channel region in a...
8937305 Semiconductor device  
To provide a highly reliable semiconductor device which includes a transistor including an oxide semiconductor, in a semiconductor device including a staggered transistor having a bottom-gate...
8927353 Fin field effect transistor and method of forming the same  
A fin field effect transistor and method of forming the same. The fin field effect transistor includes a semiconductor substrate having a fin structure and between two trenches with top portions...
8921169 Semiconductor device and fabrication method thereof  
For forming a gate electrode, a conductive film with low resistance including Al or a material containing Al as its main component and a conductive film with low contact resistance for preventing...
8916467 SOI radio frequency switch with enhanced signal fidelity and electrical isolation  
A doped contact region having an opposite conductivity type as a bottom semiconductor layer is provided underneath a buried insulator layer in a bottom semiconductor layer. At least one conductive...
8901619 Asymmetric FinFET devices  
Asymmetric FET devices, and a method for fabricating such asymmetric devices on a fin structure is disclosed. The fabrication method includes disposing over the fin a high-k dielectric layer...
8865555 Semiconductor device and manufacturing method thereof  
A base insulating film is formed over a substrate. A first oxide semiconductor film is formed over the base insulating film, and then first heat treatment is performed to form a second oxide...
8859353 Semiconductor device and fabrication method thereof  
A p channel TFT of a driving circuit has a single drain structure and its n channel TFT, an LDD structure. A pixel TFT has the LDD structure. A pixel electrode disposed in a pixel unit is...
8859355 Method to make dual material finFET on same substrate  
A method of fabricating a semiconductor device including proving a substrate having a germanium containing layer that is present on a dielectric layer, and etching the germanium containing layer...
8859346 Method for manufacturing array substrate with embedded photovoltaic cell  
A method for manufacturing array substrate with embedded photovoltaic cell includes: providing a substrate; forming a buffer layer on the substrate; forming an amorphous silicon layer on the...
8847361 Memory cell layout  
A system and method for a memory cell layout is disclosed. An embodiment comprises forming dummy layers and spacers along the sidewalls of the dummy layer. Once the spacers have been formed, the...
8846463 Method to construct a 3D semiconductor device  
A method to construct a semiconductor device, the method including: forming a first mono-crystallized semiconductor layer; forming a second mono-crystallized semiconductor layer including...
8835925 Array substrate for in-plane switching mode liquid crystal display device and method of fabricating the same  
An array substrate for an IPS mode LCD device comprises a substrate; a gate line along a first direction; a data line along a second direction; a TFT connected to the gate and data lines; a common...
8828811 Manufacturing method of semiconductor device comprising steps of forming oxide semiconductor film, performing heat treatment on the oxide semiconductor film, and performing oxygen doping treatment on the oxide semiconductor film after the heat treatment  
A semiconductor device using an oxide semiconductor, with stable electric characteristics and high reliability. In a process for manufacturing a bottom-gate transistor including an oxide...
8815661 MIM capacitor in FinFET structure  
A method of forming a FinFET structure having a metal-insulator-metal capacitor. Silicon fins are formed on a semiconductor substrate followed by formation of the metal-insulator-metal capacitor...
8815663 Method of manufacturing thin film transistor, thin film transistor manufactured using the method, method of manufacturing organic light-emitting display apparatus, and organic light-emitting display apparatus manufactured using the method  
A method of manufacturing a TFT, including forming a buffer layer, an amorphous silicon layer, an insulating layer, and a first conductive layer on a substrate, forming a polycrystalline silicon...
8815730 Method for forming bond pad stack for transistors  
A method for forming bond pads on a semiconductor die includes forming a dielectric stack including a bottom and top dielectric layer having a contact hole therethrough over a bond pad. An outer...
8809154 Semiconductor device and method for manufacturing the same  
A highly reliable semiconductor device in which a transistor including an oxide semiconductor film has stable electric characteristics is manufactured. In the semiconductor device which includes...
8785266 Semiconductor device and manufacturing method thereof  
A first oxide insulating film is formed over a substrate. After a first oxide semiconductor film is formed over the first oxide insulating film, heat treatment is performed, so that hydrogen...
8754486 IO ESD device and methods for forming the same  
A method includes forming an ESD diode including performing an epitaxy growth to form an epitaxy region comprising silicon and substantially free from germanium. The epitaxy region is doped with a...
8748243 Display device, method for manufacturing display device, and SOI substrate  
A manufacturing method is provided which achieves an SOI substrate with a large area and can improve productivity of manufacture of a display device using the SOI substrate. A plurality of...
8748247 Fin field-effect-transistor (FET) structure and manufacturing method  
A method for fabricating a semiconductor structure includes providing a semiconductor substrate having a first region and a second region, and doping top of the semiconductor substrate to form a...
8735231 Manufacturing method of dual-gate thin film transistor  
A dual-gate transistor including: a first insulating layer provided to cover a first conductive layer; a first semiconductor layer over the first insulating layer; second semiconductor layers over...
8728905 Stress-generating shallow trench isolation structure having dual composition  
A shallow trench isolation structure containing a first shallow trench isolation portion comprising the first shallow trench material and a second shallow trench isolation portion comprising the...
8716074 Methods for forming isolated fin structures on bulk semiconductor material  
Methods are provided for fabricating a semiconductor device. A method comprises forming a layer of a first semiconductor material overlying the bulk substrate and forming a layer of a second...
8709884 Hybrid fin field-effect transistor structures and related methods  
Semiconductor-on-insulator structures facilitate the fabrication of devices, including MOSFETs that are at least partially depleted during operation and FinFETs including bilayer fins and/or...
8703557 Methods of removing dummy fin structures when forming finFET devices  
One method disclosed herein includes forming a plurality of fin-formation trenches in a substrate that defines a plurality of fins, wherein at least one of the fins is a dummy fin, forming an...
8691646 FINFET compatible PC-bounded ESD diode  
A semiconductor device is formed having compatibility with FINFET process flow, while having a large enough junction area of to reduce the discharge ESD current density. Embodiments include...
8685805 Semiconductor devices with connection patterns  
Provided is a semiconductor device. The semiconductor device includes a semiconductor substrate, a first isolation dielectric pattern on the semiconductor substrate, and an active pattern on the...
8679906 Asymmetric multi-gated transistor and method for forming  
In one embodiment, there is an asymmetric multi-gated transistor that has a semiconductor fin with a non-uniform doping profile. A first portion of the fin has a higher doping concentration while...
8673704 FinFET and method for manufacturing the same  
A FinFET and a method for manufacturing the same are disclosed. The FinFET comprises an etching stop layer on a semiconductor substrate; a semiconductor fin on the etching stop layer; a gate...
8673703 Fabrication of graphene nanoelectronic devices on SOI structures  
A semiconductor-on-insulator structure and a method of forming the silicon-on-insulator structure including an integrated graphene layer are disclosed. In an embodiment, the method comprises...
8674444 Structure and method of forming a transistor with asymmetric channel and source/drain regions  
A semiconductor structure includes a semiconductor substrate. A conductive gate abuts a gate insulator for controlling conduction of a channel region. The gate insulator abuts the channel region....
8669146 Semiconductor structures with thinned junctions and methods of manufacture  
A method of forming a semiconductor structure, including forming a channel in a first portion of a semiconductor layer and forming a doped extension region in a second portion of the semiconductor...