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7622338 |
Method for manufacturing semiconductor device
The present invention provides a method for forming a semiconductor region having a desired shape, and also provides a method for manufacturing a semiconductor device with few variations. Moreover,...
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7622337 |
Method for fabricating a transistor using a SOI wafer
Embodiments relate to a method for fabricating a transistor by using a SOI wafer. A gate insulation layer and a first gate conductive layer on a silicon-on-insulator substrate of a substrate to...
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7615782 |
Thin film transistor substrate and liquid crystal display panel having sub-pixels
The present invention relates to a thin film transistor substrate and a liquid crystal display panel for use in a liquid crystal display apparatus, and aims to provide a thin film transistor...
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7615384 |
Semiconductor display device and method of manufacturing the same
A method of manufacturing a semiconductor device with the use of a laser crystallization method is provided which can prevent grain boundaries from being formed in a channel forming region of a TFT...
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7611928 |
Method for producing a substrate
Substrate having a first partial substrate with a carrier layer and a second partial substrate, which is bonded to the first partial substrate. The second partial substrate has an insulator layer,...
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7608495 |
Transistor forming methods
A transistor forming method includes forming a dielectric spacer in a trench surrounding an active area island, forming line openings through the spacer, and forming a gate line extending through...
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7605028 |
Method of forming a memory device having a storage transistor
A memory device and a method of forming the memory device. The memory device comprises a storage transistor at a surface of a substrate comprising a body portion between first and second...
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7605023 |
Manufacturing method for a semiconductor device and heat treatment method therefor
To apply a technique of forming a dense insulating film with a high quality in a thin film element such as a TFT formed on a glass substrate by eliminating an influence of contraction of the...
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7585734 |
Method of fabricating multi-gate transistor and multi-gate transistor fabricated thereby
Provided are a method of fabricating an improved multi-gate transistor and a multi-gate transistor fabricated using the method, in which an active pattern is formed on a substrate, the active...
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7585714 |
Method for manufacturing semiconductor device, semiconductor device, and laser irradiation apparatus
It is an object of the present invention to provide a laser irradiation apparatus being able to crystallize the semiconductor film homogeneously while suppressing the variation of the crystallinity...
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7582516 |
CMOS devices with hybrid channel orientations, and methods for fabricating the same using faceted epitaxy
The present invention relates to a semiconductor substrate comprising at least first and second device regions. The first device region has a substantially planar surface oriented along one of a...
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7579220 |
Semiconductor device manufacturing method
It is an object of the present invention to form a plurality of elements in a limited area to reduce the area occupied by the elements for integration so that further higher resolution (increase in...
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7579214 |
Semiconductor device and a method of manufacturing the same
To form a driver circuit to be mounted to a liquid crystal display device or the like on a glass substrate, a quartz substrate, etc., and to provide a display device mounting driver circuits formed...
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7575976 |
Localized spacer for a multi-gate transistor
In one embodiment, the present invention includes a double gate transistor having a silicon fin formed on a buried oxide layer and first and second insulation layers formed on a portion of the...
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7573108 |
Non-planar transistor and techniques for fabricating the same
A non-planar transistor and methods for fabricating the same. In certain embodiments, the transistor includes an active gate and a passive gate. The active gate may be switchably coupled to a first...
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7569438 |
Method of manufacturing semiconductor device
A method of manufacturing a semiconductor device that includes the steps of forming an oxide film on a surface layer section, forming a window section by selectively removing the oxide film,...
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7566642 |
Process of manufacturing an N-type Schottky barrier tunnel transistor
An n-type SBTT and a manufacturing method thereof are provided. The SBTT includes a silicon layer, a gate, a double layer that has a rare-earth metal silicide layer and a transition metal silicide...
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7566598 |
Method of mask reduction for producing a LTPS-TFT array by use of photo-sensitive low-K dielectrics
The present invention discloses a method of mask reduction for producing a low-temperature polysilicon thin film transistor array by use of a photo-sensitive low-K dielectric, which comprises the...
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7560784 |
Fin PIN diode
Embodiments of the invention generally relate to the field of semiconductor devices, and more specifically to fin-based junction diodes. A portion of a doped semiconductor fin may protrude through...
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7560397 |
Laser irradiation method and method of manufacturing a semiconductor device
A method of manufacturing a semiconductor device is provided which uses a laser crystallization method capable of increasing substrate processing efficiency. An island-like semiconductor film...
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7560358 |
Method of preparing active silicon regions for CMOS or other devices
A method of preparing active silicon regions for CMOS or other devices includes providing a structure including a silicon substrate ( 210, 410 ) having formed thereon first and second silicon...
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7560313 |
SOI wafer and method for producing the same
The present invention provides a SOI wafer produced by an ion implantation delamination method wherein a width of a SOI island region in a terrace portion generated in an edge portion of the SOI...
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7556992 |
Method for forming vertical structures in a semiconductor device
A method is provided for making a semiconductor device, comprising (a) providing a semiconductor stack comprising a first semiconductor layer ( 407 ) having a <110> crystallographic...
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7554118 |
Thin film transistor, flat panel display having the same and a method of fabricating each
A TFT having a dual buffer structure, a method of fabricating the same, and a flat panel display having the TFT, and a method of fabricating the same are provided. The TFT includes a first buffer...
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7553713 |
Method of manufacturing semiconductor substrates and semiconductor devices
A semiconductor substrate includes a semiconductor base substrate that has an oxide film selectively formed on a part thereof, the oxide film having a non-uniform thickness; and a semiconductor...
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7550334 |
Non-volatile memory and method of manufacturing the same
A non-volatile memory in which a leak current from an electric charge accumulating layer to an active layer is reduced and a method of manufacturing the non-volatile memory are provided. In a...
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7550332 |
Non-planar transistor having germanium channel region and method of manufacturing the same
Provided is a non-planar transistor with a multi-gate structure that includes a germanium channel region, and a method of manufacturing the same. The non-planar transistor includes a silicon body...
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7547589 |
Method for fabricating semiconductor device, and electro-optical device, integrated circuit and electronic apparatus including the semiconductor device
The invention provides a technique that enables formation of minute patterns on an uneven substrate in volume production without reducing productivity. The method for fabricating a semiconductor...
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7544549 |
Method for manufacturing semiconductor device and MOS field effect transistor
Upon manufacture of a semiconductor device provided with a source region and a drain region formed by activating, through anneal, an n-type first dopant ion-implanted in a p-type device forming...
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7538391 |
Curved FINFETs
A method of forming a transistor patterns a semiconductor fin on a substrate, such that the fin extends from the substrate. Then, the method forms a gate conductor over a central portion of the...
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7537985 |
Double gate isolation
A double-gated fin-type field effect transistor (FinFET) structure has electrically isolated gates. In a method for manufacturing the FinFET structure, a fin, having a gate dielectric on each...
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7534669 |
Method and structure to create multiple device widths in FinFET technology in both bulk and SOI
Disclosed is a structure and method for producing a fin-type field effect transistor (FinFET) that has a buried oxide layer over a substrate, at least one first fin structure and at least one...
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7534668 |
Method of fabricating etch-stopped SOI back-gate contact
The buried oxide region has a layer added which etches selectively with respect to oxide, allowing the contacts to a gate or to a back gate to be created without overetching into the buried oxide...
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7531879 |
Method and resultant structure for floating body memory on bulk wafer
A method for making floating body memory cells from a bulk substrate. A thin silicon germanium and overlying silicon layers are formed on the bulk substrate. Anchors and a bridge are formed to...
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7528020 |
Method for forming thin film transistor
A method for forming a pattern is provided. First, a substrate is provided. Then, a discontinuous film is formed on the substrate so as to reduce the stress of the film. After that, the...
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7524711 |
Method of manufacturing an image TFT array for an indirect X-ray sensor and structure thereof
The present invention discloses a method of manufacturing an image TFT array and a structure thereof. A substrate is provided. At least one first line, a lower electrode, a pad electrode, a common...
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7524710 |
Radiation-hardened silicon-on-insulator CMOS device, and method of making the same
A silicon-on-insulator metal oxide semiconductor device comprising ultrathin silicon-on-sapphire substrate; at least one P-channel MOS transistor formed in the ultrathin silicon layer; and N-type...
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7521300 |
Semiconductor device substrate including a single-crystalline layer and method of manufacturing semiconductor device substrate
A method of manufacturing a semiconductor device substrate includes forming a mask layer pattern on a semiconductor layer insulated from a surface of a semiconductor substrate by an electrically...
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7517806 |
Integrated circuit having pairs of parallel complementary FinFETs
A method and structure for an integrated circuit structure that utilizes complementary fin-type field effect transistors (FinFETs) is disclosed. The invention has a first-type of FinFET which...
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7517773 |
Method of manufacturing a thin film transistor
A method of manufacturing a semiconductor device characterized by its high-speed operation and high reliability is provided in which a semiconductor layer crystallized by a CW laser is used for an...
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7512161 |
Device, method and system for generating an infrared image
The infrared image generation device, method and system generate realistic infrared images to accurately test infrared sensors. The device and system include a laser light source, at least one...
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7510919 |
Anchoring, by lateral oxidizing, of patterns of a thin film to prevent the dewetting phenomenon
The invention relates to a thin film having a thickness of less than 10 nm, made of oxidizable semi-conductor material and patterned in the form of patterns. To prevent the dewetting phenomenon of...
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7507616 |
Method of manufacturing a flexible thin film transistor array panel including plastic substrate
A method of manufacturing a flexible display is provided, which includes forming a gate line including a gate electrode on a substrate, sequentially depositing a gate insulating layer covering the...
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7491592 |
Thin film transistor device with high symmetry
A thin film transistor device with high symmetry is disclosed, in which the symmetrical structure of transistor is utilized to enable currents flowing in the channels of each transistor formed on a...
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7488654 |
Fabrication of local damascene finFETs using contact type nitride damascene mask
Disclosed are methods for forming FinFETs using a first hard mask pattern to define active regions and a second hard mask to protect portions of the insulating regions between active regions. The...
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7485510 |
Field effect device including inverted V shaped channel region and method for fabrication thereof
A semiconductor structure includes a semiconductor layer that includes an inverted V shaped channel region that allows avoidance of a raised source/drain region within the semiconductor structure....
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7482212 |
Semiconductor device and manufacturing method thereof
A method of manufacturing a semiconductor device including forming a trench on a first surface of a silicon substrate, forming a thermal oxide layer and a deposited oxide layer on the trench and...
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7482211 |
Junction leakage reduction in SiGe process by implantation
A method for forming a semiconductor device is provided. The method includes providing a semiconductor substrate, forming a gate dielectric over the semiconductor substrate, forming a gate...
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7476576 |
Method of fabricating a semiconductor device
A semiconductor device with high reliability is provided using an SOI substrate. When the SOI substrate is fabricated by using a technique typified by SIMOX, ELTRAN, or Smart-Cut, a single crystal...
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7473588 |
Method for insulating patterns formed in a thin film of oxidizable semi-conducting material
A method for insulating patterns formed in a thin film made of a first oxidizable semi-conducting material, with a thickness less than or equal to 20 nm and preferably less than or equal to 10 nm,...
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