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7618904 |
Method of manufacturing a semiconductor device
When a laser beam is irradiated onto a semiconductor film, a steep temperature gradient is produced between a substrate and the semiconductor film. For this reason, the semiconductor film...
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7605443 |
Semiconductor substrate manufacturing method and semiconductor device manufacturing method, and semiconductor substrate and semiconductor device manufactured by the methods
The present invention relates to a method of manufacturing a semiconductor substrate, which enables a semiconductor device to have high speed operating characteristics and high performance...
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7605029 |
Method of manufacturing semiconductor device
According to the present invention, an impurity region, to which a rare gas element (also called a rare gas) and one kind or a plurality of kinds of elements selected from the group consisting of...
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7605028 |
Method of forming a memory device having a storage transistor
A memory device and a method of forming the memory device. The memory device comprises a storage transistor at a surface of a substrate comprising a body portion between first and second...
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7585711 |
Semiconductor-on-insulator (SOI) strained active area transistor
A selectively strained MOS device such as selectively strained PMOS device making up an NMOS and PMOS device pair without affecting a strain in the NMOS device the method including providing a...
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7566601 |
Method of making a one transistor SOI non-volatile random access memory cell
One aspect of the present subject matter relates to a memory cell, or more specifically, to a one-transistor SOI non-volatile memory cell. In various embodiments, the memory cell includes a...
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7563658 |
Method for manufacturing semiconductor device
The present invention relates to a method for manufacturing a semiconductor film, including the steps of forming a transparent conductive film, forming a first conductive film over the transparent...
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7544549 |
Method for manufacturing semiconductor device and MOS field effect transistor
Upon manufacture of a semiconductor device provided with a source region and a drain region formed by activating, through anneal, an n-type first dopant ion-implanted in a p-type device forming...
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7534670 |
Semiconductor device and manufacturing method of the same
Provided is a technique of effectively removing a metallic element that has catalytic action in terms of the crystallization of a semiconductor film and remains in a semiconductor film obtained...
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7527994 |
Amorphous silicon thin-film transistors and methods of making the same
The present invention provides amorphous silicon thin-film transistors and methods of making such transistors for use with active matrix displays. In particular, one aspect of the present invention...
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7494852 |
Method for creating a Ge-rich semiconductor material for high-performance CMOS circuits
A method of forming a surface Ge-containing channel which can be used to fabricate a Ge-based field effect transistor (FET) which can be applied to semiconductor-on-insulator substrates (SOIs) is...
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7491561 |
Pixel sensor having doped isolation structure sidewall
A novel pixel sensor structure formed on a substrate of a first conductivity type includes a photosensitive device of a second conductivity type and a surface pinning layer of the first...
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7482243 |
Ultra-thin Si channel MOSFET using a self-aligned oxygen implant and damascene technique
The present invention provides a method of forming a thin channel MOSFET having low external resistance. The method comprises forming a dummy gate region atop a substrate; implanting oxide forming...
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7482211 |
Junction leakage reduction in SiGe process by implantation
A method for forming a semiconductor device is provided. The method includes providing a semiconductor substrate, forming a gate dielectric over the semiconductor substrate, forming a gate...
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7442600 |
Methods of forming threshold voltage implant regions
The invention includes methods of forming channel region implants for two transistor devices simultaneously, in which a mask is utilized to block a larger percentage of a channel region location of...
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7442592 |
Manufacturing a semiconductor device
A technique of reducing fluctuation between elements is provided in which a semiconductor film having a crystal structure is obtained by using a metal element that accelerates crystallization of a...
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7439092 |
Thin film splitting method
A method of fabricating thin films of semiconductor materials by implanting ions in a substrate composed of at least two different elements at least one of which can form a gaseous phase on bonding...
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7435635 |
Method for crystallizing semiconductor material
A semiconductor material and a method for forming the same, said semiconductor material having produced by a process comprising melting a noncrystal semiconductor film containing therein carbon,...
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7432139 |
Methods for forming dielectrics and metal electrodes
A method for forming a semiconductor structure, the method including forming in a processing chamber a dielectric layer over a substrate; and subsequently forming, in the same processing chamber...
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7368751 |
Method of manufacturing an electronic device comprising a thin film transistor
A method of manufacturing an electronic device comprising a thin film transistor ( 42 ), comprises forming a hydrogen-containing layer ( 22 ) over a semiconductor layer ( 10;20 ), irradiating the...
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7348222 |
Method for manufacturing a thin film transistor and method for manufacturing a semiconductor device
It is an object of the present invention to provide a method for removing the metal element from the semiconductor film which is different from the conventional gettering step for removing the...
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7332443 |
Method for fabricating a semiconductor device
The present invention relates to a method for fabricating a semiconductor device. In order to provide for a high carrier mobility in an active region of the device, germanium atoms are implanted...
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7320921 |
Smart grading implant with diffusion retarding implant for making integrated circuit chips
A method of making an integrated circuit chip is provided, which combines a smart grading implant with a diffusion retarding implant, e.g., to improve short channel effect controllability and...
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7265002 |
Method for making a semiconductor device including a MOSFET having a band-engineered superlattice with a semiconductor cap layer providing a channel
A method for making a semiconductor device may include providing a substrate, and forming at least one MOSFET adjacent the substrate by forming a superlattice including a plurality of stacked...
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7226823 |
Semiconductor device and method of manufacturing the same
In a method of obtaining a crystalline silicon film having high crystallinity at a low temperature and for a short time by using a catalytic element and using both a heat treatment and irradiation...
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7226820 |
Transistor fabrication using double etch/refill process
A semiconductor fabrication process includes forming a gate electrode ( 120 ) overlying a gate dielectric ( 110 ) overlying a semiconductor substrate ( 102 ). First spacers ( 124 ) are formed on...
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7186597 |
Method of manufacturing transistors
A mask is formed selectively on a crystalline silicon film containing a catalyst element, and an amorphous silicon film is formed so as to cover the mask. Phosphorus is implanted into the amorphous...
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7160784 |
Method of manufacturing a semiconductor film with little warp
When a laser beam is irradiated onto a semiconductor film, a steep temperature gradient is produced between a substrate and the semiconductor film. For this reason, the semiconductor film...
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7129533 |
High concentration indium fluorine retrograde wells
A method and apparatus to form a high-concentration, indium-fluorine retrograde well within a substrate. The indium-fluorine retrograde well includes an indium concentration greater than about...
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7122452 |
Method of manufacturing a semiconductor on a silicon on insulator (SOI) substrate using solid epitaxial regrowth (SPER) and semiconductor device made thereby
A method of producing a semiconductor device on a silicon on insulator (SOI) substrate is disclosed. In one aspect, the method comprises providing a device with a monocrystalline semiconductor...
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7115453 |
Semiconductor device and manufacturing method of the same
Provided is a technique of effectively removing a metallic element that has catalytic action in terms of the crystallization of a semiconductor film and remains in a semiconductor film obtained...
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7115452 |
Method of making semiconductor device
To provide a method of removing a catalyst element from a crystalline silicon film obtained by solid phase growth using the catalyst element promoting crystallization, phosphorus is implanted...
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7109074 |
Method of manufacturing a semiconductor device
A technique of reducing fluctuation between elements is provided in which a semiconductor film having a crystal structure is obtained by using a metal element that accelerates crystallization of a...
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7094663 |
Semiconductor device and method of manufacturing the same
The semiconductor device has a low-resistance layer provided under the interconnection extending from the signal input to a gate of MOSFET. The low-resistance layer decreases the substrate...
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7084017 |
Liquid crystal display
A thin film transistor array substrate including an insulating substrate, a first metallic pattern formed on the insulating substrate, and an insulating film provided on the first metallic pattern....
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7060544 |
Fabricating method of thin film transistor
A fabricating method of a thin film transistor includes forming an active layer of polycrystalline silicon, forming a first insulating layer on the active layer, forming a gate electrode on the...
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7052942 |
Surface passivation of GaN devices in epitaxial growth chamber
The present invention relates to passivation of a gallium nitride (GaN) structure before the GaN structure is removed from an epitaxial growth chamber. The GaN structure includes one or more...
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7049183 |
Semiconductor film, method for manufacturing semiconductor film, semiconductor device, and method for manufacturing semiconductor device
A method of the present invention includes the steps of forming an amorphous semiconductor layer on an insulative surface, adding a catalyst element capable of promoting crystallization to the...
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7045818 |
Semiconductor device and method of manufacturing the same comprising thin film containing low concentration of hydrogen
In a fabrication process of a semiconductor device for use in a TFT liquid crystal display system, before the start of crystallizing amorphous silicon (a-Si), dehydrogenation annealing is carried...
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7033902 |
Method for making thin film transistors with lightly doped regions
A method for making a thin film transistor (TFT) with a lightly doped region. The process of the invention is compatible with the currently common TFT manufacturing processes. A substrate with a...
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7026197 |
Method of fabricating semiconductor device
There is disclosed a method of fabricating TFTs using a silicon film crystallized with the aid of nickel. The nickel is removed from the crystallized silicon film. The method starts with...
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7009205 |
Image display device using transistors each having a polycrystalline semiconductor layer
An image display device using transistors each having a polycrystalline semiconductor layer constructed so that drain and source regions are fully activated, and a manufacturing method thereof. The...
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7005362 |
Method of fabricating a thin film transistor
A method of fabricating a TFT includes a step of forming an impurity region for a source and a drain by simultaneously implanting and activating impurity ions. More particularly, the present...
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6955953 |
Method of manufacturing a semiconductor device having thin film transistor and capacitor
A method of manufacturing a semiconductor with a storage capacitor having sufficient memory capacity while requiring a minimum area is provided. The method includes steps for manufacturing a...
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6953714 |
Thin film semiconductor device having arrayed configuration of semiconductor crystals and a method for producing it
A method for producing a thin film semiconductor device is described. In the method, a thin film layer of non-single-crystalline semiconductor, which is deposited on a base layer of glass, is...
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6949796 |
Halo implant in semiconductor structures
A halo implant method for forming halo regions of at least first and second transistors formed on a same semiconductor substrate. The first transistor comprises a first gate region disposed between...
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6939754 |
Isotropic polycrystalline silicon and method for producing same
A high-quality isotropic polycrystalline silicon (poly-Si) and a method for fabricating high quality isotropic poly-Si film are provided. The method includes forming a film of amorphous silicon...
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6927107 |
Method of producing semiconductor device
In a production method of a semiconductor device, a catalyst element, e.g. Ni, is added to an amorphous silicon film, formed on a substrate with an insulating surface, for promoting crystallization...
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6908780 |
Laser repair facilitated pixel structure and repairing method
A laser repair facilitated pixel structure and repair method. The pixel structure includes a thin film transistor, a pixel electrode, and a conductive line. Control of the pixel structure is...
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6885066 |
SOI type MOSFET
A buried insulating film is formed in an LDD region between a source region and a drain region, and a non-doped silicon film is formed in the SOI layer above the buried insulating film. The SOI...
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