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7618904 Method of manufacturing a semiconductor device  
When a laser beam is irradiated onto a semiconductor film, a steep temperature gradient is produced between a substrate and the semiconductor film. For this reason, the semiconductor film...
7605443 Semiconductor substrate manufacturing method and semiconductor device manufacturing method, and semiconductor substrate and semiconductor device manufactured by the methods  
The present invention relates to a method of manufacturing a semiconductor substrate, which enables a semiconductor device to have high speed operating characteristics and high performance...
7605029 Method of manufacturing semiconductor device  
According to the present invention, an impurity region, to which a rare gas element (also called a rare gas) and one kind or a plurality of kinds of elements selected from the group consisting of...
7605028 Method of forming a memory device having a storage transistor  
A memory device and a method of forming the memory device. The memory device comprises a storage transistor at a surface of a substrate comprising a body portion between first and second...
7585711 Semiconductor-on-insulator (SOI) strained active area transistor  
A selectively strained MOS device such as selectively strained PMOS device making up an NMOS and PMOS device pair without affecting a strain in the NMOS device the method including providing a...
7566601 Method of making a one transistor SOI non-volatile random access memory cell  
One aspect of the present subject matter relates to a memory cell, or more specifically, to a one-transistor SOI non-volatile memory cell. In various embodiments, the memory cell includes a...
7563658 Method for manufacturing semiconductor device  
The present invention relates to a method for manufacturing a semiconductor film, including the steps of forming a transparent conductive film, forming a first conductive film over the transparent...
7544549 Method for manufacturing semiconductor device and MOS field effect transistor  
Upon manufacture of a semiconductor device provided with a source region and a drain region formed by activating, through anneal, an n-type first dopant ion-implanted in a p-type device forming...
7534670 Semiconductor device and manufacturing method of the same  
Provided is a technique of effectively removing a metallic element that has catalytic action in terms of the crystallization of a semiconductor film and remains in a semiconductor film obtained...
7527994 Amorphous silicon thin-film transistors and methods of making the same  
The present invention provides amorphous silicon thin-film transistors and methods of making such transistors for use with active matrix displays. In particular, one aspect of the present invention...
7494852 Method for creating a Ge-rich semiconductor material for high-performance CMOS circuits  
A method of forming a surface Ge-containing channel which can be used to fabricate a Ge-based field effect transistor (FET) which can be applied to semiconductor-on-insulator substrates (SOIs) is...
7491561 Pixel sensor having doped isolation structure sidewall  
A novel pixel sensor structure formed on a substrate of a first conductivity type includes a photosensitive device of a second conductivity type and a surface pinning layer of the first...
7482243 Ultra-thin Si channel MOSFET using a self-aligned oxygen implant and damascene technique  
The present invention provides a method of forming a thin channel MOSFET having low external resistance. The method comprises forming a dummy gate region atop a substrate; implanting oxide forming...
7482211 Junction leakage reduction in SiGe process by implantation  
A method for forming a semiconductor device is provided. The method includes providing a semiconductor substrate, forming a gate dielectric over the semiconductor substrate, forming a gate...
7442600 Methods of forming threshold voltage implant regions  
The invention includes methods of forming channel region implants for two transistor devices simultaneously, in which a mask is utilized to block a larger percentage of a channel region location of...
7442592 Manufacturing a semiconductor device  
A technique of reducing fluctuation between elements is provided in which a semiconductor film having a crystal structure is obtained by using a metal element that accelerates crystallization of a...
7439092 Thin film splitting method  
A method of fabricating thin films of semiconductor materials by implanting ions in a substrate composed of at least two different elements at least one of which can form a gaseous phase on bonding...
7435635 Method for crystallizing semiconductor material  
A semiconductor material and a method for forming the same, said semiconductor material having produced by a process comprising melting a noncrystal semiconductor film containing therein carbon,...
7432139 Methods for forming dielectrics and metal electrodes  
A method for forming a semiconductor structure, the method including forming in a processing chamber a dielectric layer over a substrate; and subsequently forming, in the same processing chamber...
7368751 Method of manufacturing an electronic device comprising a thin film transistor  
A method of manufacturing an electronic device comprising a thin film transistor ( 42 ), comprises forming a hydrogen-containing layer ( 22 ) over a semiconductor layer ( 10;20 ), irradiating the...
7348222 Method for manufacturing a thin film transistor and method for manufacturing a semiconductor device  
It is an object of the present invention to provide a method for removing the metal element from the semiconductor film which is different from the conventional gettering step for removing the...
7332443 Method for fabricating a semiconductor device  
The present invention relates to a method for fabricating a semiconductor device. In order to provide for a high carrier mobility in an active region of the device, germanium atoms are implanted...
7320921 Smart grading implant with diffusion retarding implant for making integrated circuit chips  
A method of making an integrated circuit chip is provided, which combines a smart grading implant with a diffusion retarding implant, e.g., to improve short channel effect controllability and...
7265002 Method for making a semiconductor device including a MOSFET having a band-engineered superlattice with a semiconductor cap layer providing a channel  
A method for making a semiconductor device may include providing a substrate, and forming at least one MOSFET adjacent the substrate by forming a superlattice including a plurality of stacked...
7226823 Semiconductor device and method of manufacturing the same  
In a method of obtaining a crystalline silicon film having high crystallinity at a low temperature and for a short time by using a catalytic element and using both a heat treatment and irradiation...
7226820 Transistor fabrication using double etch/refill process  
A semiconductor fabrication process includes forming a gate electrode ( 120 ) overlying a gate dielectric ( 110 ) overlying a semiconductor substrate ( 102 ). First spacers ( 124 ) are formed on...
7186597 Method of manufacturing transistors  
A mask is formed selectively on a crystalline silicon film containing a catalyst element, and an amorphous silicon film is formed so as to cover the mask. Phosphorus is implanted into the amorphous...
7160784 Method of manufacturing a semiconductor film with little warp  
When a laser beam is irradiated onto a semiconductor film, a steep temperature gradient is produced between a substrate and the semiconductor film. For this reason, the semiconductor film...
7129533 High concentration indium fluorine retrograde wells  
A method and apparatus to form a high-concentration, indium-fluorine retrograde well within a substrate. The indium-fluorine retrograde well includes an indium concentration greater than about...
7122452 Method of manufacturing a semiconductor on a silicon on insulator (SOI) substrate using solid epitaxial regrowth (SPER) and semiconductor device made thereby  
A method of producing a semiconductor device on a silicon on insulator (SOI) substrate is disclosed. In one aspect, the method comprises providing a device with a monocrystalline semiconductor...
7115453 Semiconductor device and manufacturing method of the same  
Provided is a technique of effectively removing a metallic element that has catalytic action in terms of the crystallization of a semiconductor film and remains in a semiconductor film obtained...
7115452 Method of making semiconductor device  
To provide a method of removing a catalyst element from a crystalline silicon film obtained by solid phase growth using the catalyst element promoting crystallization, phosphorus is implanted...
7109074 Method of manufacturing a semiconductor device  
A technique of reducing fluctuation between elements is provided in which a semiconductor film having a crystal structure is obtained by using a metal element that accelerates crystallization of a...
7094663 Semiconductor device and method of manufacturing the same  
The semiconductor device has a low-resistance layer provided under the interconnection extending from the signal input to a gate of MOSFET. The low-resistance layer decreases the substrate...
7084017 Liquid crystal display  
A thin film transistor array substrate including an insulating substrate, a first metallic pattern formed on the insulating substrate, and an insulating film provided on the first metallic pattern....
7060544 Fabricating method of thin film transistor  
A fabricating method of a thin film transistor includes forming an active layer of polycrystalline silicon, forming a first insulating layer on the active layer, forming a gate electrode on the...
7052942 Surface passivation of GaN devices in epitaxial growth chamber  
The present invention relates to passivation of a gallium nitride (GaN) structure before the GaN structure is removed from an epitaxial growth chamber. The GaN structure includes one or more...
7049183 Semiconductor film, method for manufacturing semiconductor film, semiconductor device, and method for manufacturing semiconductor device  
A method of the present invention includes the steps of forming an amorphous semiconductor layer on an insulative surface, adding a catalyst element capable of promoting crystallization to the...
7045818 Semiconductor device and method of manufacturing the same comprising thin film containing low concentration of hydrogen  
In a fabrication process of a semiconductor device for use in a TFT liquid crystal display system, before the start of crystallizing amorphous silicon (a-Si), dehydrogenation annealing is carried...
7033902 Method for making thin film transistors with lightly doped regions  
A method for making a thin film transistor (TFT) with a lightly doped region. The process of the invention is compatible with the currently common TFT manufacturing processes. A substrate with a...
7026197 Method of fabricating semiconductor device  
There is disclosed a method of fabricating TFTs using a silicon film crystallized with the aid of nickel. The nickel is removed from the crystallized silicon film. The method starts with...
7009205 Image display device using transistors each having a polycrystalline semiconductor layer  
An image display device using transistors each having a polycrystalline semiconductor layer constructed so that drain and source regions are fully activated, and a manufacturing method thereof. The...
7005362 Method of fabricating a thin film transistor  
A method of fabricating a TFT includes a step of forming an impurity region for a source and a drain by simultaneously implanting and activating impurity ions. More particularly, the present...
6955953 Method of manufacturing a semiconductor device having thin film transistor and capacitor  
A method of manufacturing a semiconductor with a storage capacitor having sufficient memory capacity while requiring a minimum area is provided. The method includes steps for manufacturing a...
6953714 Thin film semiconductor device having arrayed configuration of semiconductor crystals and a method for producing it  
A method for producing a thin film semiconductor device is described. In the method, a thin film layer of non-single-crystalline semiconductor, which is deposited on a base layer of glass, is...
6949796 Halo implant in semiconductor structures  
A halo implant method for forming halo regions of at least first and second transistors formed on a same semiconductor substrate. The first transistor comprises a first gate region disposed between...
6939754 Isotropic polycrystalline silicon and method for producing same  
A high-quality isotropic polycrystalline silicon (poly-Si) and a method for fabricating high quality isotropic poly-Si film are provided. The method includes forming a film of amorphous silicon...
6927107 Method of producing semiconductor device  
In a production method of a semiconductor device, a catalyst element, e.g. Ni, is added to an amorphous silicon film, formed on a substrate with an insulating surface, for promoting crystallization...
6908780 Laser repair facilitated pixel structure and repairing method  
A laser repair facilitated pixel structure and repair method. The pixel structure includes a thin film transistor, a pixel electrode, and a conductive line. Control of the pixel structure is...
6885066 SOI type MOSFET  
A buried insulating film is formed in an LDD region between a source region and a drain region, and a non-doped silicon film is formed in the SOI layer above the buried insulating film. The SOI...
Matches 1 - 50 out of 225 1 2 3 4 5 >