Matches 101 - 150 out of 345 < 1 2 3 4 5 6 7 >
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7115450 Approach to improve line end shortening including simultaneous trimming of photosensitive layer and hardmask  
A process is described for transferring a photoresist pattern into a substrate. In one embodiment a stack comprised of a top photoresist layer, a middle ARC layer, and a bottom hardmask is formed...
7105389 Method of manufacturing semiconductor device having impurity region under isolation region  
In formation of a source/drain region of an NMOS transistor, a gate-directional extension region < 41 a > of an N + block region < 41> in an N + block resist film < 51 <...
7098088 Semiconductor device having semiconductor circuit formed by semiconductor elements and method for manufacturing the same  
There is provided a semiconductor device including a semiconductor circuit formed by semiconductor elements having an LDD structure which has high reproducibility, improves the stability of TFTs...
7071040 Method of fabricating thin film transistor  
A method of fabricating a thin film transistor including an electrically insulating substrate, a semiconductor layer formed on the substrate, and source and drain electrodes formed above source and...
7064021 Method for fomring a self-aligned LTPS TFT  
A method for forming a self-aligned low temperature polysilicon thin film transistor (LTPS TFT). First, active layers of a N type LTPS TFT (NLTPS TFT) and a P type LTPS TFT (PLTPS TFT) are formed...
7056775 Semiconductor device and process for fabricating the same  
After a pattern is transferred on silicon film crystallized by annealing, the silicon film is annealed by radiation of intense rays for a short time. Especially, in the crystallizing process by...
7045862 Method and structure for providing tuned leakage current in CMOS integrated circuit  
A field effect transistor (FET) comprising an isolation layer, a source region positioned over the isolation layer, a drain region positioned over the isolation layer, a bifurcated silicide gate...
7037770 Method of manufacturing strained dislocation-free channels for CMOS  
A semiconductor device and method of manufacturing a semiconductor device. The semiconductor device includes channels for a pFET and an nFET. An SiGe layer is grown in the channel of the nFET...
7029965 Semiconductor device and manufacturing method thereof  
A method for efficiently manufacturing a semiconductor device, the semiconductor device having an FET and a pn junction diode provided on the same semiconductor substrate, the FET having a Schottky...
7008830 Poly-crystalline thin film transistor and fabrication method thereof  
A thin film transistor and its fabrication method. The transistor includes a buffer layer on a substrate, and a poly-crystalline semiconductor layer on the buffer layer. The poly-crystalline...
7009258 Method of building a CMOS structure on thin SOI with source/drain electrodes formed by in situ doped selective amorphous silicon  
The present invention provides improved controllability of the lateral etch encroachment of silicon under the spacer, in light of the fact that the exemplary method, in accordance with the present...
7002214 Ultra-thin body super-steep retrograde well (SSRW) FET devices  
A method of manufacture of a Super Steep Retrograde Well Field Effect Transistor device starts with an SOI layer formed on a substrate, e.g. a buried oxide layer. Thin the SOI layer to form an...
6995050 Thin film transistor and fabrication method for same  
A thin film transistor and a method for fabricating the same. The thin film transistor comprises a substrate and a patterned semiconductive layer formed on the substrate, wherein the semiconductive...
6995055 Structure of a semiconductor integrated circuit and method of manufacturing the same  
A method of fabricating CMOS transistors of first and second conductivity types in an SOI substrate includes the steps of etching contact holes and alignment marks through the semiconductor and...
6995046 Process for making byte erasable devices having elements made with nanotubes  
A method of making byte erasable devices having elements made with nanotubes. Under one aspect of the invention, a device is made having nanotube memory elements. A structure is provided having a...
6987035 Method and apparatus for forming crystallized semiconductor layer, and method for manufacturing semiconductor apparatus  
A method for forming a crystallized semiconductor layer includes preparing a non-single-crystal semiconductor layer in which at least one crystal seed is formed, and irradiating with an energy ray...
6979603 Method of manufacturing a semiconductor device  
TFT structures optimal for driving conditions of a pixel portion and driving circuits are obtained using a small number of photo masks. First through third semiconductor films are formed on a first...
6974981 Isolation structures for imposing stress patterns  
A substrate under tension and/or compression improves performance of devices fabricated therein. Tension and/or compression can be imposed on a substrate through selection of appropriate STI fill...
6972221 Thin film semiconductor device and method for manufacturing same  
In a semiconductor device having an N-channel MOS transistor and a P-channel MOS transistor, each of the N-channel and P-channel MOS transistors is made up of a polycrystal silicon layer, a gate...
6949388 CMOS image sensor integrated together with memory device  
The present invention relates to a CMOS (Complementary Metal Oxide Silicon) image sensor; and, more particularly, to an image sensor integrated into one chip, together with a memory. The CMOS image...
6946333 Active matrix pixel device construction method  
A method of constructing an active matrix pixel device uses a universal active matrix (UAM) comprising a matrix array of switching elements whose spacing defines a base pitch and a pixel array...
6917074 Multiplexer structure with interdigitated gates and shared diffusion  
A multiplexer structure includes a semiconductor substrate having a shared diffusion region. A first gate having a first finger and a second finger is disposed on the shared diffusion region, and a...
6902961 Method of forming a CMOS thin film transistor device  
A method of forming a CMOS thin film transistor device. A dry etching procedure is performed to remove part of a photoresist layer and part of a metal layer and thus forms a gate with a symmetrical...
6897111 Method using quasi-planar double gated fin field effect transistor process for the fabrication of a thyristor-based static read/write random-access memory  
A method for manufacturing an integrated circuit structure includes providing a semiconductor substrate and forming a horizontal semiconductor fin on top of the semiconductor substrate. An access...
6894356 SRAM system having very lightly doped SRAM load transistors for improving SRAM cell stability and method for making the same  
A static random access memory (SRAM) cell is given increased stability and latch-up immunity by fabricating the PMOS load transistors of the SRAM cell to have a very low drain/source dopant...
6881986 Design and fabrication method for finger n-type doped photodiodes with high sensitivity for CIS products  
A novel structure for a photodiode is disclosed. It is comprised of a p-type region, which can be a p-substrate or p-well, extending to the surface of a semiconductor substrate. A multiplicity of...
6872978 CMOS-type thin film semiconductor device and method of fabricating the same  
In the fabrication of a CMOS-TFT, non-selectively doping (for both of p- and n-type TFTs) and selectively doping (only for the n-type TFT) with p-type impurities (B: boron) are successively...
6867107 Variable capacitance device and process for manufacturing the same  
A variable capacitance device comprising, in a semiconductor layer formed on a substrate via an buried oxide film: an n− region 132 formed in the shape of a ring and containing an n-type...
6864128 Manufacturing method for a semiconductor device  
A gate insulating film 4 , two polysilicon films 5 and 7 , and a silicon nitride film 9 are successively laminated on a semiconductor substrate 1 in this order. Each of the polysilicon...
6861297 Method of making a liquid crystal device  
A liquid crystal display device and a fabricating method thereof wherein an adhesive force between a seal and a lower plate is improved upon bonding of an upper plate to the lower plate. In high...
6852577 Method for forming a low temperature polysilicon CMOS thin film transistor  
A method for forming a low temperature polysilicon complementary metal oxide semiconductor thin film transistor (LTPS CMOS TFT). It utilizes six photo-etching processes (PEP) to form the LTPS CMOS...
6841430 Semiconductor and fabrication method thereof  
A semiconductor device with p-channel and n-channel field effect devices formed on a common substrate, where the drain and source regions of the n-channel field effect device are formed within a...
6830962 Self-aligned SOI with different crystal orientation using wafer bonding and SIMOX processes  
The present invention provides integrated semiconductor devices that are formed upon an SOI substrate having different crystal orientations that provide optimal performance for a specific device....
6815271 Semiconductor display devices and applications  
A semiconductor device having CMOS circuits formed on a glass substrate. The CMOS circuits are composed of TFTs. Lightly doped regions are formed only in the N-channel TFTs. When P-channel TFTs are...
6794230 Approach to improve line end shortening  
A process is described for transferring a photoresist pattern into a substrate. In one embodiment a stack comprised of a top photoresist layer, a middle ARC layer, and a bottom hardmask is formed...
6790715 Manufacturing method of CMOS thin film transistor  
A method of forming a CMOS TFT device. The present method features that the n + -ion doping procedure is performed after defining the contact holes located in the doped areas. Thus, the...
6787405 Method of fabricating liquid crystal display devices integrated with driving circuit  
A method of forming a liquid crystal display device with a pixel TFT, a bottom electrode of pixel capacitor CL, and a storage capacitor Cs in a pixel region, and an n-type TFT and a p-type TFT in a...
6767755 Method of producing electrooptical device and method of producing driving substrate for driving electrooptical device  
A single-crystal silicon layer is formed by graphoepitaxy from a low-melting-point metal layer which contains dissolved polycrystalline or amorphous silicon, or from a melt of a silicon-containing...
6759284 Method for polysilicon crystallization by simultaneous laser and rapid thermal annealing  
A method for polysilicon crystallization by simultaneous laser and rapid thermal annealing is disclosed. In the method, a substrate that has an amorphous silicon layer on top is first provided and...
6753239 Bond and back side etchback transistor fabrication process  
A supporting structure is wafer-bonded to the upper face side of a partially or fully processed device wafer. The device wafer includes a transistor having a well region that extends into the...
6737123 Silicon-based film formation process, silicon-based film, semiconductor device, and silicon-based film formation system  
A silicon-based film is formed superimposing a direct-current potential on the high-frequency power to set the potential of the high-frequency power feed section to a potential which is lower by V...
6734034 Transistor and associated driving device  
A method of forming a thin film transistor and its associated driver. A polysilicon layer, a gate oxide layer and a gate layer are formed on a substrate. A photoresist layer comprising of a top...
6727124 Method of manufacturing a TFT using a catalytic element to promote crystallization of a semiconductor film and gettering the catalytic element  
A catalytic element for promoting crystallization of an amorphous silicon film is efficiently gettered to provide a highly reliable TFT, and an electro-optical device using the TFT and a method of...
6723587 Ultra small-sized SOI MOSFET and method of fabricating the same  
An ultra small-sized SOI MOSFET having a high integration density, low power consumption, but high performances, and a method of fabricating the same are provided. The method includes preparing a...
6723588 Method for fabricating SRAM cell  
A method of fabricating the SRAM cell is disclosed. The method includes forming a gate on a substrate, forming an oxidation barrier film on side portions of the gate, oxidizing the resultant...
6713329 Inverter made of complementary p and n channel transistors using a single directly-deposited microcrystalline silicon film  
A p channel thin-film transistor (TFT) made of directly deposited microcrystalline silicon (uc-Si). The p TFT is integrated with its n channel counterpart on a single uc-Si film, to form a...
6693001 Process for producing semiconductor integrated circuit device  
A Co silicide layer having a low resistance and a small junction leakage current is formed on the surface of the gate electrode, source and drain of MOSFETs by silicidizing a Co film deposited on a...
6686255 Amorphizing ion implant local oxidation of silicon (LOCOS) method for forming an isolation region  
Within a local oxidation of silicon (LOCOS) method for forming a silicon oxide isolation region, there is first amorphized areally completely at least a surface sub-layer portion of a silicon layer...
6664150 Active well schemes for SOI technology  
A semiconductor device fabricated on a silicon-on-insulator substrate and having an active well scheme as well as methods, including a non-self-aligned and self-aligned, of fabricating such a...
6649980 Semiconductor device with MOS transistors sharing electrode  
A semiconductor device including: a gate electrode made from silicon-germanium or germanium; a first semiconductor region formed under the gate electrode with a first gate insulating film between...
Matches 101 - 150 out of 345 < 1 2 3 4 5 6 7 >