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7402466 |
Strained silicon CMOS on hybrid crystal orientations
Methods of forming a strained Si-containing hybrid substrate are provided as well as the strained Si-containing hybrid substrate formed by the methods. In the methods of the present invention, a...
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7396710 |
Fin-type semiconductor device with low contact resistance and its manufacture method
A semiconductor device comprises a fin-type semiconductor region (fin) on a support substrate, having a pair of generally vertical side walls and an upper surface coupling the side walls; an...
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7393730 |
Coplanar silicon-on-insulator (SOI) regions of different crystal orientations and methods of making the same
In a first aspect, a first method is provided for semiconductor device manufacturing. The first method includes the steps of (1) providing a substrate; and (2) forming a first silicon-on-insulator...
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7384829 |
Patterned strained semiconductor substrate and device
A method that includes forming a pattern of strained material and relaxed material on a substrate; forming a strained device in the strained material; and forming a non-strained device in the...
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7382029 |
Method and apparatus for improving integrated circuit device performance using hybrid crystal orientations
A method for implementing a desired offset in device characteristics of an integrated circuit includes forming a first device of a first conductivity type on a first portion of a substrate having a...
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7368337 |
Semiconductor device and manufacturing method thereof
A semiconductor device and method of manufacturing the same are disclosed. An example semiconductor device includes a semiconductor substrate having a first well, a first source electrode, a drain...
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7368334 |
Silicon-on-insulator chip with multiple crystal orientations
A silicon-on-insulator chip includes an insulator layer, typically formed over a substrate. A first silicon island with a surface of a first crystal orientation overlies the insulator layer and a...
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7361534 |
Method for fabricating SOI device
A method is provided for fabricating a semiconductor on insulator (SOI) device. The method includes, in one embodiment, providing a monocrystalline silicon substrate having a monocrystalline...
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7351620 |
Methods of forming semiconductor constructions
The invention includes BIFETRAM devices. Such devices comprise a bipolar transistor in combination with a field effect transistor (FET) in a three-dimensional stacked configuration. The memory...
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7326603 |
Semiconductor device, method of manufacturing semiconductor substrate, and method of manufacturing semiconductor device
A semiconductor device includes a semiconductor substrate that has an oxide film selectively formed on a part thereof; a semiconductor layer that is formed on the oxide film by epitaxial growth; a...
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7319378 |
Anti-theft system for a vehicle with real-time notification feature
A comprehensive vehicle anti-theft and alarm system that immediately notifies a vehicle owner when a vehicle is being tampered with. Notification is accomplished via wireless signal to the owners'...
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7253040 |
Fabrication method of semiconductor device
An insulating substrate is bonded to a monocrystalline Si substrate that includes a monocrystalline Si thin film transistor and a hydrogen ion implanted portion. After depositing an amorphous Si...
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7132689 |
Liquid crystal display of horizontal electric field applying type and fabricating method thereof
A liquid crystal display having an applied horizontal electric field comprising: a gate line; a common line substantially parallel to the gate line; a data line arranged to cross the gate line and...
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7118945 |
Method of forming insulating layer and method of fabricating thin film transistor using the same
A method of forming an insulating layer including preparing a substrate and depositing an insulating layer on the substrate such that density of a top portion of the insulating layer is different...
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7115904 |
Method of manufacturing organic electroluminescent device, organic electroluminescent device, substrate for organic electroluminescent device, and electronic apparatus
To provide an organic electroluminescent device, a manufacturing method thereof, and an electronic apparatus, which can reduce wiring line resistance, lower power consumption, suppress heating and...
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7115453 |
Semiconductor device and manufacturing method of the same
Provided is a technique of effectively removing a metallic element that has catalytic action in terms of the crystallization of a semiconductor film and remains in a semiconductor film obtained...
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7091073 |
Semiconductor component, active matrix substrate for a liquid crystal display, and methods of manufacturing such component and substrate
In contrast to conventional semiconductor components formed on a silicon substrate, the present invention aims at providing a transistor component functioning as a semiconductor component by being...
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7078766 |
Transistor and logic circuit on thin silicon-on-insulator wafers based on gate induced drain leakage currents
A transistor structure fabricated on thin SOI is disclosed. The transistor on thin SOI has gated n+ and p+ junctions, which serve as switches turning on and off GIDL current on the surface of the...
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7078275 |
Semiconductor device and manufacturing method for same
An object is to provide a semiconductor device manufacturing method which makes possible a thin film transistor which is little affected by crystal grain boundaries, even when the channel width of...
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7075155 |
Structure for protecting a semiconductor circuit from electrostatic discharge and a method for forming the structure
A structure for protecting a semiconductor circuit from electrostatic discharge is provided. The structure comprises a semiconductor substrate of a first conductivity type having two wells of a...
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7075002 |
Thin-film photoelectric conversion device and a method of manufacturing the same
A method of manufacturing a thin-film solar cell, comprising the steps of: forming an amorphous silicon film on a substrate; placing a metal element that accelerates the crystallization of silicon...
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7071039 |
Manufacturing method of partial SOI wafer, semiconductor device using the partial SOI wafer and manufacturing method thereof
A semiconductor device includes a first semiconductor region having a buried oxide layer formed therein, a second semiconductor region in which the buried oxide layer does not exist, a trench...
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7064018 |
Methods for fabricating three dimensional integrated circuits
A method of forming a semiconductor device includes fabricating digital circuits comprising a programmable logic circuit on a substrate; selectively fabricating either a memory circuit or a...
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7052941 |
Method for making a three-dimensional integrated circuit structure
Vertically oriented semiconductor devices may be added to a separately fabricated substrate that includes electrical devices and/or interconnect. The plurality of vertically oriented semiconductor...
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7045413 |
Method of manufacturing a semiconductor integrated circuit using a selective disposable spacer technique and semiconductor integrated circuit manufactured thereby
Methods of manufacturing a semiconductor integrated circuit using selective disposable spacer technology and semiconductor integrated circuits manufactured thereby: The method includes forming a...
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7022557 |
Thin film transistor array substrate and manufacturing method thereof
A thin film transistor array substrate, and its manufacturing method, that is made using a three-round mask process. Gate patterns, each of which includes a gate line consisting of a transparent...
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6977408 |
High-performance non-volatile memory device and fabrication process
An EEPROM device exhibiting high saturation current and low signal propagation delay and a process for fabricating the device that includes the formation of refractory metal silicide regions in the...
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6972220 |
Structures and methods of anti-fuse formation in SOI
An anti-fuse structure that can be programmed at low voltage and current and which potentially consumes very little chip spaces and can be formed interstitially between elements spaced by a minimum...
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6972218 |
Semiconductor device and fabricating method thereof
The present invention relates to a method of fabricating a semiconductor device that allows assuredly ion implanting an impurity to a support substrate and a semiconductor device that can rapidly...
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6967129 |
Semiconductor device and fabrication method thereof
This invention provides a semiconductor device having high operation performance and high reliability. An LDD region 707 overlapping with a gate wiring is arranged in an n-channel TFT 802 ...
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6943067 |
Three-dimensional integrated semiconductor devices
The present invention describes a process for three-dimensional integration of semiconductor devices and a resulting device. The process combines low temperature wafer bonding methods with...
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6940130 |
Body contact MOSFET
A body contact structure utilizing an insulating structure between the body contact portion of the active area and the transistor portion of the active area is disclosed. In one embodiment, the...
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6936847 |
Display device with an improved contact hole arrangement for contacting a semiconductor layer through an insulation film
Thin film transistors for a display device each include a semiconductor layer made of polysilicon having a channel region, drain and source regions at both sides of the channel region and doped...
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6927105 |
Thin film transistor array substrate and manufacturing method thereof
A thin film transistor array substrate, and manufacturing methods thereof, having a dual data link structure comprised of a first data link made from a gate metal layer and of a second data link...
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6917074 |
Multiplexer structure with interdigitated gates and shared diffusion
A multiplexer structure includes a semiconductor substrate having a shared diffusion region. A first gate having a first finger and a second finger is disposed on the shared diffusion region, and a...
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6902960 |
Oxide interface and a method for fabricating oxide thin films
An oxide interface and a method for fabricating an oxide interface are provided. The method comprises forming a silicon layer and an oxide layer overlying the silicon layer. The oxide layer is...
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6884668 |
Semiconductor device and manufacturing method therefor
To provide devices relating to a manufacturing method for a semiconductor device using a laser crystallization method, which is capable of reducing a cost involved in a design change, preventing a...
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6875645 |
Pixel structure and fabricating method thereof
A method of fabricating a pixel structure. A gate is formed over the substrate and then an insulation layer is formed over the substrate covering the gate. A channel layer is formed over the...
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6858448 |
Method for evaluating and manufacturing a semiconductor device
A semiconductor device evaluation method includes the steps of measuring a total injected electron quantity before an insulating film causes a dielectric breakdown and obtaining the ratio between...
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6853037 |
Fabrication of low power CMOS device with high reliability
A semiconductor device includes a relatively lower threshold level MOSFET and relatively higher threshold level MOSFETs of n- and p-types. The higher threshold level MOSFETs have gate oxide films...
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6844223 |
Semiconductor device having silicon on insulator and fabricating method therefor
The present invention relates to a highly integrated SOI semiconductor device and a method for fabricating the SOI semiconductor device by reducing a distance between diodes or well resistors...
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6838322 |
Method for forming a double-gated semiconductor device
A method for forming a polysilicon FinFET ( 10 ) or other thin film transistor structure includes forming an insulative layer ( 12 ) over a semiconductor substrate ( 14 ). An amorphous silicon...
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6835629 |
Power integrated circuit with vertical current flow and related manufacturing process
Integrated circuit including a power component with vertical current flow and at least one low or medium voltage component, the at least one low or medium voltage component formed in a first...
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6835608 |
Method for crystallizing amorphous film and method for fabricating LCD by using the same
A method for crystallizing an amorphous film by doping phosphorus and using FE-MIC, and method for fabrication an LCD by using the same. The method for crystallizing an amorphous film includes...
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6821828 |
Method of manufacturing a semiconductor device
A technique of reducing fluctuation between elements is provided in which a semiconductor film having a crystal structure is obtained by using a metal element that accelerates crystallization of a...
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6818487 |
Self-aligned, planarized thin-film transistors, devices employing the same, and methods of fabrication thereof
A semiconductor device is presented which includes a self-aligned, planarized thin-film transistor which can be used in various integrated circuit devices, such as static random access memory...
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6797548 |
Electro-optical device and thin film transistor and method for forming the same
A method of fabricating silicon TFTs (thin-film transistors) is disclosed. The method comprises a crystallization step by laser irradiation effected after the completion of the device structure....
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6794231 |
Method for manufacturing a liquid crystal display panel having a gate line with at least one opening
A liquid crystal display panel (and a method for manufacturing the liquid crystal display panel) includes a gate line and a signal line intersecting the gate line at an intersection portion where...
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6787408 |
Method for forming an electrical insulating layer on bit lines of the flash memory
A method for forming an electrical insulating layer on bit lines of the flash memory is disclosed. A conductive layer, a mask layer and a cap layer are sequentially formed on a semiconductor...
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6787403 |
Semiconductor device and method of manufacture
A TFT memory 11 is provided with a polysilicon layer 22, wherein each region of the source 22 a , the channel 22 b and the drain 22 c are formed on a substrate 21, and gate oxide films...
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