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7635618 |
Integrated circuit devices with high and low voltage components and processes for manufacturing these devices
The present invention includes a technique for making a dual voltage integrated circuit device. A gate dielectric layer is formed on a semiconductor substrate and a gate material layer is formed on...
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7629650 |
Semiconductor device
The invention prevents the reduction of a display quality caused by a light leak current of a thin film transistor used in a display device. A lower metal layer is formed on a substrate, and a...
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7619251 |
Laser crystallization method suppressing propagation of cracks forming a display device
A method of irradiating at least a part of a semiconductor film on the substrate with a CW or pseudo-CW laser beam so as to grow crystals laterally. A region over the semiconductor film having Si...
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7619255 |
Layer-stacked wiring and method for manufacturing same and semiconductor device using same and method for manufacturing semiconductor device
A layer-stacked wiring made up of a microcrystalline silicon thin film and a metal thin film is provided which is capable of suppressing an excessive silicide formation reaction between the...
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7615421 |
Method for fabricating thin film transistor
The present invention relates to a method for fabricating thin film transistor, more particularly, to a method for fabricating thin film transistor which not only manufactures a polycrystalline...
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7611937 |
High performance transistors with hybrid crystal orientations
A method of forming a semiconductor structure having a hybrid crystal orientation and forming MOSFETs having improved performance on the semiconductor structure is provided. The method includes...
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7588976 |
Display device, method of production of the same, and projection type display device
A display device able to raise a light resistance of pixel transistors without depending upon a light shielding structure and a method of production of same, wherein an average crystal grain size...
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7585697 |
Thin-film transistor, method of producing thin-film transistor, electronic circuit, display, and electronic device
Aspects of the invention can provide a thin-film transistor having good transistor characteristics and operable with a low driving voltage, a method of producing such a thin-film transistor, a...
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7585709 |
Display panels and fabrication methods thereof
A display panel including a pixel array region. The pixel array region includes a plurality of pixel cells disposed in a matrix configuration. Each pixel cell has an active device. A relative...
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7572686 |
System for thin film deposition utilizing compensating forces
A process for depositing a thin film material on a substrate is disclosed, comprising simultaneously directing a series of gas flows from the output face of a delivery head of a thin film...
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7560317 |
Method of forming single crystalline silicon layer, structure including the same, and method of fabricating thin film transistor using the same
Provided are a method of forming a single crystalline silicon layer, a structure including the same, and method of fabricating a thin film transistor (“TFT”) using the same. The method of...
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7531392 |
Multi-orientation semiconductor-on-insulator (SOI) substrate, and method of fabricating same
The present invention relates to semiconductor-on-insulator (SOI) substrate structures that contain surface semiconductor regions of different crystal orientations located directly on an insulator...
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7524707 |
Modified hybrid orientation technology
A semiconductor process and apparatus includes forming first and second metal gate electrodes ( 151, 161 ) over a hybrid substrate ( 17 ) by forming the first gate electrode ( 151 ) over a first...
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7524708 |
Fabrication method of a high brightness light emitting diode with a bidirectionally angled substrate
A light emitting diode includes a substrate tilted toward first and second directions simultaneously, a first cladding layer formed with a semiconductor material of a first conductive type on the...
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7498208 |
Chevron CMOS trigate structure
Disclosed herein is a structure with two different type tri-gate MOSFETs formed on the same substrate. Each MOSFET comprises a fin with optimal mobility for the particular type of MOSFET. Due to...
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7494918 |
Semiconductor structures including multiple crystallographic orientations and methods for fabrication thereof
Semiconductor structures and methods for fabrication thereof are predicated upon epitaxial growth of an epitaxial surface semiconductor layer upon a semiconductor substrate having a first...
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7494852 |
Method for creating a Ge-rich semiconductor material for high-performance CMOS circuits
A method of forming a surface Ge-containing channel which can be used to fabricate a Ge-based field effect transistor (FET) which can be applied to semiconductor-on-insulator substrates (SOIs) is...
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7488633 |
Method for forming polysilicon by illuminating a laser beam at the amorphous silicon substrate through a mask
A mask for crystallization of amorphous silicon to polysilicon is provided. The mask includes a plurality of slit patterns for defining regions to be illuminated. The plurality of slit patterns are...
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7482209 |
Hybrid orientation substrate and method for fabrication of thereof
A method for fabricating a hybrid orientation substrate provides for: (1) a horizontal epitaxial augmentation of a masked surface semiconductor layer that leaves exposed a portion of a base...
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7479410 |
Hybrid-orientation technology buried n-well design
A semiconductor structure is provided that includes a hybrid orientated substrate having at least two coplanar surfaces of different surface crystal orientations, wherein one of the coplanar...
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7449374 |
Methods of manufacturing semiconductor devices with rotated substrates
Integrated circuits are oriented on a substrate at an angle that is rotated between 5 to 40 degrees from a direction parallel or perpendicular to a preferred crystalline plane direction, such as...
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7442589 |
System and method for uniform multi-plane silicon oxide layer formation for optical applications
Methods and systems for growing uniform oxide layers include an example method including growing a first layer of oxide on first and second facets of the substrate, with the first facet having a...
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7439107 |
Laser irradiation apparatus, method of irradiating laser light, and method of manufacturing a semiconductor device
When the laser light is irradiated with high output in the manufacturing process for a semiconductor device, an attenuator is heated and cause a deformation due to the laser light scattered in the...
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7439109 |
Method of forming an integrated circuit structure on a hybrid crystal oriented substrate
Disclosed is an integrated circuit structure that has a substrate having at least two types of crystalline orientations. First-type transistors (e.g., NFETs) are formed on first portions of the...
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7439110 |
Strained HOT (hybrid orientation technology) MOSFETs
A strained HOT MOSFET fabrication method. The MOSFET fabrication method includes providing a semiconductor structure which includes (a) a first semiconductor layer having a first crystallographic...
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7432149 |
CMOS on SOI substrates with hybrid crystal orientations
Methods and structures for CMOS devices with hybrid crystal orientations using double SOI substrates is provided. In accordance with preferred embodiments, a manufacturing sequence includes the...
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7427515 |
Electronic element including ferroelectric substance film and method of manufacturing the same
A laminated film structure, method of manufacturing, and a preferable electronic element using the structure. The effective polarization into the electric field can be realized in the direction of...
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7407841 |
Liquid crystal display panel and method of fabricating thereof
The present invention relates to a liquid crystal display panel and a fabricating method thereof that is capable of enhancing crystallization efficiency of an active layer and simplifying the...
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7402466 |
Strained silicon CMOS on hybrid crystal orientations
Methods of forming a strained Si-containing hybrid substrate are provided as well as the strained Si-containing hybrid substrate formed by the methods. In the methods of the present invention, a...
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7399663 |
Embedded strain layer in thin SOI transistors and a method of forming the same
By forming a deep recess through the buried insulating layer and re-growing a strained semiconductor material, an enhanced strain generation mechanism may be provided in SOI-like transistors....
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7393745 |
Method for fabricating self-aligned double layered silicon-metal nanocrystal memory element
A nanocrystal memory element and a method for fabricating the same are proposed. The fabricating method involves selectively oxidizing polysilicon not disposed beneath and not covered with a...
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7381990 |
Thin film transistor with multiple gates fabricated using super grain silicon crystallization
A thin film transistor with multiple gates is fabricated using a super grain silicon (SGS) crystallization process. The thin film transistor a semiconductor layer formed in a zigzag shape on an...
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7368335 |
Semiconductor device and method of manufacturing the same
The orientation ratio of a crystalline semiconductor film obtained by crystallizing an amorphous semiconductor film through heat treatment and irradiation of intense light such as laser light,...
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7368334 |
Silicon-on-insulator chip with multiple crystal orientations
A silicon-on-insulator chip includes an insulator layer, typically formed over a substrate. A first silicon island with a surface of a first crystal orientation overlies the insulator layer and a...
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7364952 |
Systems and methods for processing thin films
The present disclosure is directed to methods and systems for processing a thin film samples. In an exemplary method, semiconductor thin films are loaded onto two different loading fixtures, laser...
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7358126 |
Dual damascene structure and methods of forming the same
A dual damascene structure and a method of forming a dual damascene structure are disclosed. The dual damascene structure includes an insulation member, a single crystal member and a filling...
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7358164 |
Crystal imprinting methods for fabricating substrates with thin active silicon layers
Methods of forming semiconductor structures characterized by a thin active silicon layer on an insulating substrate by a crystal imprinting or damascene approach. The methods include patterning an...
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7348658 |
Multilayer silicon over insulator device
An apparatus and method for a multilayer silicon over insulator (SOI) device is provided. In the multilayer SOI device, the crystal orientation of at least one active region of a device is...
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7335541 |
Method for fabricating thin film transistor using the mask for forming polysilicon including slit patterns deviated from each other
A mask for crystallization of amorphous silicon to polysilicon is provided. The mask includes a plurality of slit patterns for defining regions to be illuminated. The plurality of slit patterns are...
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7332384 |
Technique for forming a substrate having crystalline semiconductor regions of different characteristics
Different types of crystalline semiconductor regions are provided on a single substrate by forming a dielectric region within a first crystalline semiconductor region. Thereafter, a second...
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7326599 |
Gate material for semiconductor device fabrication
In forming an electronic device, a semiconductor layer is pre-doped and a dopant distribution anneal is performed prior to gate definition. Alternatively, the gate is formed from a metal....
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7312110 |
Methods of fabricating semiconductor devices having thin film transistors
Methods of fabricating semiconductor devices are provided. An interlayer insulating layer is provided on a single crystalline semiconductor substrate. A single crystalline semiconductor plug is...
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7294537 |
Method of fabricating thin film transistor with multiple gates using super grain silicon crystallization
A method of fabricating a thin film transistor with multiple gates uses a super grain silicon (SGS) crystallization process. The thin film transistor includes a semiconductor layer having a zigzag...
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7291520 |
Piezoelectric element and liquid jet head using the piezoelectric element
Provided are a piezoelectric element and a liquid-jet head using the same, in which favorable crystallinity can be obtained with improved uniformity, breakage of a piezoelectric film can be...
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7253036 |
Method of forming gate insulation film using plasma method of fabricating poly-silicon thin film transistor using the same
A method of forming a gate insulation film of a crystallized thin film transistor, is provided, which can enhance an interfacial feature which exists between a gate oxide film and a silicon thin...
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7253034 |
Dual SIMOX hybrid orientation technology (HOT) substrates
This invention provides a separation by implanted oxygen (SIMOX) method for forming planar hybrid orientation semiconductor-on-insulator (SOI) substrates having different crystal orientations,...
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7247528 |
Methods of fabricating semiconductor integrated circuits using selective epitaxial growth and partial planarization techniques
Methods of fabricating a semiconductor integrated circuit having thin film transistors using an SEG technique are provided. The methods include forming an inter-layer insulating layer on a...
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7229860 |
Method for manufacturing a thin film transistor using poly silicon
A manufacturing method of a thin film transistor. An amorphous silicon thin film is formed on an insulating substrate, and is crystallized by a lateral solidification process with illumination of...
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7226833 |
Semiconductor device structure and method therefor
Two different transistors types are made on different crystal orientations in which both are formed on SOI. A substrate has an underlying semiconductor layer of one of the crystal orientations and...
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7226820 |
Transistor fabrication using double etch/refill process
A semiconductor fabrication process includes forming a gate electrode ( 120 ) overlying a gate dielectric ( 110 ) overlying a semiconductor substrate ( 102 ). First spacers ( 124 ) are formed on...
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