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7635618 Integrated circuit devices with high and low voltage components and processes for manufacturing these devices  
The present invention includes a technique for making a dual voltage integrated circuit device. A gate dielectric layer is formed on a semiconductor substrate and a gate material layer is formed on...
7629650 Semiconductor device  
The invention prevents the reduction of a display quality caused by a light leak current of a thin film transistor used in a display device. A lower metal layer is formed on a substrate, and a...
7619251 Laser crystallization method suppressing propagation of cracks forming a display device  
A method of irradiating at least a part of a semiconductor film on the substrate with a CW or pseudo-CW laser beam so as to grow crystals laterally. A region over the semiconductor film having Si...
7619255 Layer-stacked wiring and method for manufacturing same and semiconductor device using same and method for manufacturing semiconductor device  
A layer-stacked wiring made up of a microcrystalline silicon thin film and a metal thin film is provided which is capable of suppressing an excessive silicide formation reaction between the...
7615421 Method for fabricating thin film transistor  
The present invention relates to a method for fabricating thin film transistor, more particularly, to a method for fabricating thin film transistor which not only manufactures a polycrystalline...
7611937 High performance transistors with hybrid crystal orientations  
A method of forming a semiconductor structure having a hybrid crystal orientation and forming MOSFETs having improved performance on the semiconductor structure is provided. The method includes...
7588976 Display device, method of production of the same, and projection type display device  
A display device able to raise a light resistance of pixel transistors without depending upon a light shielding structure and a method of production of same, wherein an average crystal grain size...
7585697 Thin-film transistor, method of producing thin-film transistor, electronic circuit, display, and electronic device  
Aspects of the invention can provide a thin-film transistor having good transistor characteristics and operable with a low driving voltage, a method of producing such a thin-film transistor, a...
7585709 Display panels and fabrication methods thereof  
A display panel including a pixel array region. The pixel array region includes a plurality of pixel cells disposed in a matrix configuration. Each pixel cell has an active device. A relative...
7572686 System for thin film deposition utilizing compensating forces  
A process for depositing a thin film material on a substrate is disclosed, comprising simultaneously directing a series of gas flows from the output face of a delivery head of a thin film...
7560317 Method of forming single crystalline silicon layer, structure including the same, and method of fabricating thin film transistor using the same  
Provided are a method of forming a single crystalline silicon layer, a structure including the same, and method of fabricating a thin film transistor (“TFT”) using the same. The method of...
7531392 Multi-orientation semiconductor-on-insulator (SOI) substrate, and method of fabricating same  
The present invention relates to semiconductor-on-insulator (SOI) substrate structures that contain surface semiconductor regions of different crystal orientations located directly on an insulator...
7524707 Modified hybrid orientation technology  
A semiconductor process and apparatus includes forming first and second metal gate electrodes ( 151, 161 ) over a hybrid substrate ( 17 ) by forming the first gate electrode ( 151 ) over a first...
7524708 Fabrication method of a high brightness light emitting diode with a bidirectionally angled substrate  
A light emitting diode includes a substrate tilted toward first and second directions simultaneously, a first cladding layer formed with a semiconductor material of a first conductive type on the...
7498208 Chevron CMOS trigate structure  
Disclosed herein is a structure with two different type tri-gate MOSFETs formed on the same substrate. Each MOSFET comprises a fin with optimal mobility for the particular type of MOSFET. Due to...
7494918 Semiconductor structures including multiple crystallographic orientations and methods for fabrication thereof  
Semiconductor structures and methods for fabrication thereof are predicated upon epitaxial growth of an epitaxial surface semiconductor layer upon a semiconductor substrate having a first...
7494852 Method for creating a Ge-rich semiconductor material for high-performance CMOS circuits  
A method of forming a surface Ge-containing channel which can be used to fabricate a Ge-based field effect transistor (FET) which can be applied to semiconductor-on-insulator substrates (SOIs) is...
7488633 Method for forming polysilicon by illuminating a laser beam at the amorphous silicon substrate through a mask  
A mask for crystallization of amorphous silicon to polysilicon is provided. The mask includes a plurality of slit patterns for defining regions to be illuminated. The plurality of slit patterns are...
7482209 Hybrid orientation substrate and method for fabrication of thereof  
A method for fabricating a hybrid orientation substrate provides for: (1) a horizontal epitaxial augmentation of a masked surface semiconductor layer that leaves exposed a portion of a base...
7479410 Hybrid-orientation technology buried n-well design  
A semiconductor structure is provided that includes a hybrid orientated substrate having at least two coplanar surfaces of different surface crystal orientations, wherein one of the coplanar...
7449374 Methods of manufacturing semiconductor devices with rotated substrates  
Integrated circuits are oriented on a substrate at an angle that is rotated between 5 to 40 degrees from a direction parallel or perpendicular to a preferred crystalline plane direction, such as...
7442589 System and method for uniform multi-plane silicon oxide layer formation for optical applications  
Methods and systems for growing uniform oxide layers include an example method including growing a first layer of oxide on first and second facets of the substrate, with the first facet having a...
7439107 Laser irradiation apparatus, method of irradiating laser light, and method of manufacturing a semiconductor device  
When the laser light is irradiated with high output in the manufacturing process for a semiconductor device, an attenuator is heated and cause a deformation due to the laser light scattered in the...
7439109 Method of forming an integrated circuit structure on a hybrid crystal oriented substrate  
Disclosed is an integrated circuit structure that has a substrate having at least two types of crystalline orientations. First-type transistors (e.g., NFETs) are formed on first portions of the...
7439110 Strained HOT (hybrid orientation technology) MOSFETs  
A strained HOT MOSFET fabrication method. The MOSFET fabrication method includes providing a semiconductor structure which includes (a) a first semiconductor layer having a first crystallographic...
7432149 CMOS on SOI substrates with hybrid crystal orientations  
Methods and structures for CMOS devices with hybrid crystal orientations using double SOI substrates is provided. In accordance with preferred embodiments, a manufacturing sequence includes the...
7427515 Electronic element including ferroelectric substance film and method of manufacturing the same  
A laminated film structure, method of manufacturing, and a preferable electronic element using the structure. The effective polarization into the electric field can be realized in the direction of...
7407841 Liquid crystal display panel and method of fabricating thereof  
The present invention relates to a liquid crystal display panel and a fabricating method thereof that is capable of enhancing crystallization efficiency of an active layer and simplifying the...
7402466 Strained silicon CMOS on hybrid crystal orientations  
Methods of forming a strained Si-containing hybrid substrate are provided as well as the strained Si-containing hybrid substrate formed by the methods. In the methods of the present invention, a...
7399663 Embedded strain layer in thin SOI transistors and a method of forming the same  
By forming a deep recess through the buried insulating layer and re-growing a strained semiconductor material, an enhanced strain generation mechanism may be provided in SOI-like transistors....
7393745 Method for fabricating self-aligned double layered silicon-metal nanocrystal memory element  
A nanocrystal memory element and a method for fabricating the same are proposed. The fabricating method involves selectively oxidizing polysilicon not disposed beneath and not covered with a...
7381990 Thin film transistor with multiple gates fabricated using super grain silicon crystallization  
A thin film transistor with multiple gates is fabricated using a super grain silicon (SGS) crystallization process. The thin film transistor a semiconductor layer formed in a zigzag shape on an...
7368335 Semiconductor device and method of manufacturing the same  
The orientation ratio of a crystalline semiconductor film obtained by crystallizing an amorphous semiconductor film through heat treatment and irradiation of intense light such as laser light,...
7368334 Silicon-on-insulator chip with multiple crystal orientations  
A silicon-on-insulator chip includes an insulator layer, typically formed over a substrate. A first silicon island with a surface of a first crystal orientation overlies the insulator layer and a...
7364952 Systems and methods for processing thin films  
The present disclosure is directed to methods and systems for processing a thin film samples. In an exemplary method, semiconductor thin films are loaded onto two different loading fixtures, laser...
7358126 Dual damascene structure and methods of forming the same  
A dual damascene structure and a method of forming a dual damascene structure are disclosed. The dual damascene structure includes an insulation member, a single crystal member and a filling...
7358164 Crystal imprinting methods for fabricating substrates with thin active silicon layers  
Methods of forming semiconductor structures characterized by a thin active silicon layer on an insulating substrate by a crystal imprinting or damascene approach. The methods include patterning an...
7348658 Multilayer silicon over insulator device  
An apparatus and method for a multilayer silicon over insulator (SOI) device is provided. In the multilayer SOI device, the crystal orientation of at least one active region of a device is...
7335541 Method for fabricating thin film transistor using the mask for forming polysilicon including slit patterns deviated from each other  
A mask for crystallization of amorphous silicon to polysilicon is provided. The mask includes a plurality of slit patterns for defining regions to be illuminated. The plurality of slit patterns are...
7332384 Technique for forming a substrate having crystalline semiconductor regions of different characteristics  
Different types of crystalline semiconductor regions are provided on a single substrate by forming a dielectric region within a first crystalline semiconductor region. Thereafter, a second...
7326599 Gate material for semiconductor device fabrication  
In forming an electronic device, a semiconductor layer is pre-doped and a dopant distribution anneal is performed prior to gate definition. Alternatively, the gate is formed from a metal....
7312110 Methods of fabricating semiconductor devices having thin film transistors  
Methods of fabricating semiconductor devices are provided. An interlayer insulating layer is provided on a single crystalline semiconductor substrate. A single crystalline semiconductor plug is...
7294537 Method of fabricating thin film transistor with multiple gates using super grain silicon crystallization  
A method of fabricating a thin film transistor with multiple gates uses a super grain silicon (SGS) crystallization process. The thin film transistor includes a semiconductor layer having a zigzag...
7291520 Piezoelectric element and liquid jet head using the piezoelectric element  
Provided are a piezoelectric element and a liquid-jet head using the same, in which favorable crystallinity can be obtained with improved uniformity, breakage of a piezoelectric film can be...
7253036 Method of forming gate insulation film using plasma method of fabricating poly-silicon thin film transistor using the same  
A method of forming a gate insulation film of a crystallized thin film transistor, is provided, which can enhance an interfacial feature which exists between a gate oxide film and a silicon thin...
7253034 Dual SIMOX hybrid orientation technology (HOT) substrates  
This invention provides a separation by implanted oxygen (SIMOX) method for forming planar hybrid orientation semiconductor-on-insulator (SOI) substrates having different crystal orientations,...
7247528 Methods of fabricating semiconductor integrated circuits using selective epitaxial growth and partial planarization techniques  
Methods of fabricating a semiconductor integrated circuit having thin film transistors using an SEG technique are provided. The methods include forming an inter-layer insulating layer on a...
7229860 Method for manufacturing a thin film transistor using poly silicon  
A manufacturing method of a thin film transistor. An amorphous silicon thin film is formed on an insulating substrate, and is crystallized by a lateral solidification process with illumination of...
7226833 Semiconductor device structure and method therefor  
Two different transistors types are made on different crystal orientations in which both are formed on SOI. A substrate has an underlying semiconductor layer of one of the crystal orientations and...
7226820 Transistor fabrication using double etch/refill process  
A semiconductor fabrication process includes forming a gate electrode ( 120 ) overlying a gate dielectric ( 110 ) overlying a semiconductor substrate ( 102 ). First spacers ( 124 ) are formed on...
Matches 1 - 50 out of 161 1 2 3 4 >