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8183099 |
Method for manufacturing transistor
A hydrogen barrier layer is selectively provided over an oxide semiconductor layer including hydrogen and hydrogen is selectively desorbed from a given region in the oxide semiconductor layer by...
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8183097 |
Thin-film transistor substrate and method of manufacturing the same
A thin-film transistor (TFT) substrate includes a semiconductor pattern, a conductive pattern, a first wiring pattern, an insulation pattern and a second wiring pattern. The semiconductor pattern...
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8183070 |
Array substrate for liquid crystal display device and method of fabricating the same
A method of fabricating an array substrate for a liquid crystal display device includes: forming an initial photoresist (PR) pattern on a metallic material layer; etching the metallic material...
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8183102 |
Semiconductor device and manufacturing method thereof
To improve field effect mobility of an inverted-staggered TFT using amorphous silicon. In an inverted-staggered TFT, a thin amorphous semiconductor layer which is made to have n-type conductivity...
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8183098 |
SOI device with contact trenches formed during epitaxial growing
A method for manufacturing an integrated electronic device. The method includes providing an SOI substrate having a semiconductor substrate, an insulating layer on the semiconductor substrate, and...
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8178438 |
Manufacturing method of semiconductor device and electronic device
Silicide films with high quality are formed with treatment of laser light irradiation, so that miniaturization and higher performance is achieved in a field-effect transistor that is formed over an...
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8178398 |
Manufacturing method of display device
To improve a deposition rate of a microcrystalline semiconductor layer by using a deposition method and to improve productivity of a display device including a TFT of a microcrystalline...
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8178397 |
Field effect transistor
A field effect transistor including a gate insulation portion, an organic semiconductor portion, a source electrode and a drain electrode, wherein when a voltage is applied to the gate at 70° C. ...
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8174012 |
Organic light emitting diode display device and method of manufacturing the same
An organic light emitting diode display device (OLED display device) having uniform electrical characteristics and a method of manufacturing the same. The OLED display device includes: a substrate;...
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8174069 |
Power semiconductor device and a method of forming a power semiconductor device
A power semiconductor device has a top surface and an opposed bottom surface below a part of which is a thick portion of semiconductor substrate. At least a portion of a drift region of the device...
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8173478 |
Method of manufacturing metal wiring and method of manufacturing semiconductor device
A metal wiring suitable for a substrate of large size is provided. The present invention is characterized in that at least one layer of conductive film is formed on an insulating surface, a resist...
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8174055 |
Formation of FinFET gate spacer
Gate spacers are formed in FinFETS having a bottom portion of a first material extending to the height of the fins, and a top portion of a second material extending above the fins. An embodiment...
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8173495 |
Semiconductor on insulator
A method and apparatus for producing a relatively thin, relatively uniform semiconductor layer which has improved carrier mobility. In an embodiment, a lattice-matched insulator layer is formed on...
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8173492 |
Method of manufacturing thin film transistor substrate
Provided are a wire structure, a method of forming a wire, a thin film transistor (TFT) substrate, and a method of manufacturing the TFT substrate. The wire structure includes a barrier layer...
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8174019 |
Static-tolerant display apparatus
A display apparatus includes a thin film transistor having a top-gate structure and a storage capacitor that are arranged on a first substrate. An upper electrode of the storage capacitor has a...
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8174068 |
Semiconductor device having vertical transistor, manufacturing method thereof, and data processing system
A semiconductor device includes: a semiconductor substrate; a silicon pillar provided perpendicularly to a main surface of the semiconductor substrate; a gate dielectric film that covers a portion...
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8173494 |
Thin film transistor array and method of manufacturing the same
A thin film transistor array and method of manufacturing the same include a pixel electrode formed of a transparent conductive layer on a substrate, a gate line formed of the transparent conductive...
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8173493 |
Thin film transistor array panel and fabrication
The present invention provides a manufacturing method of a thin film transistor array panel, which includes forming a gate line on a substrate; forming a gate insulating layer, a semiconductor...
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8168484 |
Display device and manufacturing method thereof, and semiconductor device and manufacturing method thereof
A method of forming a display device including source/drain electrodes on a substrate, a pixel electrode, an insulating partition wall layer, a channel-region semiconductor layer. The source/drain...
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8168482 |
Semiconductor device, an electronic device and an electronic apparatus
A method for manufacturing a semiconductor device comprises preparing a base; forming a silicon oxide film including hydrogen or deuterium on the base; diffusing nitrogen into the silicon oxide...
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8168481 |
Method of manufacturing SOI substrate
The method of one embodiment of the present invention includes: a first step of irradiating a bond substrate with ions to form an embrittlement region in the bond substrate; a second step of...
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8168979 |
Crystallization method, thin film transistor manufacturing method, thin film transistor, display, and semiconductor device
According to a crystallization method, in the crystallization by irradiating a non-single semiconductor thin film of 40 to 100 nm provided on an insulation substrate with a laser light, a light...
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8158464 |
Method of manufacturing a liquid crystal display device with a semiconductor film including zinc oxide
To provide a semiconductor device in which a defect or fault is not generated and a manufacturing method thereof even if a ZnO semiconductor film is used and a ZnO film to which an n-type or p-type...
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8158538 |
Single electron transistor operating at room temperature and manufacturing method for same
The present invention relates to a single-electron transistor (SET) operating at room temperature and a method of manufacturing the same, and to be specific, to a single-electron transistor...
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8158465 |
Vertical coffee-stain method for forming self-organized line structures
A “vertical” coffee-stain method for producing self-organized line structures and other very fine features that involves disposing a target structure in a solution made up of a fine particle sol...
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8158466 |
Array substrate for display device and method of fabricating the same
An array substrate including a substrate having a pixel region, a gate line and a gate electrode on the substrate, the gate electrode being connected to the gate line, a gate insulating layer on...
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8159008 |
Method of fabricating a trench-generated transistor structure
Trench-generated transistor structures, methods for fabricating transistors using a trench defined in a semiconductor-on-insulator (SOI) wafer, design structures for a trench-generated transistor,...
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8158467 |
Liquid crystal display device and method of fabricating the same
A liquid crystal display device includes a plurality of gate lines and data lines on a first substrate defining a plurality of pixel regions, a thin film transistor within the pixel regions, a...
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8158985 |
Thin film transistor devices with different electrical characteristics and method for fabricating the same
A system for displaying images. The system includes a thin film transistor (TFT) device including a first insulating layer covering a first region and a second region of a substrate. A first...
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8158463 |
Process and method for manufacturing a MOS device with intercell ion implant using one or more parallel enrichment windows
A process for manufacturing a MOS device includes forming a semiconductor layer having a first type of conductivity; forming an insulated gate structure having an electrode region (25), above the...
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8158491 |
IC card and booking-account system using the IC card
It is an object of the present invention to provide a highly sophisticated functional IC card that can ensure security by preventing forgery such as changing a picture of a face, and display other...
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8154059 |
Semiconductor device and method for manufacturing the same
An object of the present invention is to prevent the deterioration of a TFT (thin film transistor). The deterioration of the TFT by a BT test is prevented by forming a silicon oxide nitride film...
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8153463 |
Method of manufacturing thin film transistor substrate
A method of manufacturing a thin film transistor substrate includes a first process in which a gate line pattern including a gate line and a gate electrode is formed with a first conductive...
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8154021 |
Array substrate for liquid crystal display device and method of fabricating the same
Array substrates for liquid crystal display (LCD) devices are formed on a substrate with first and second gate lines crossing a data line to define first and second pixel regions. A thin film...
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8148213 |
Method of producing a biosensor
A method for manufacturing a biosensor includes forming a laminate of a first silicon oxide film and a polysilicon film on one surface of a silicon substrate; forming a second silicon oxide film on...
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8148724 |
Liquid crystal display device and method of manufacturing the same
A liquid crystal display device includes a gate line and a data line on a substrate crossing each other to define a pixel region; a thin film transistor in the pixel region and connected to the...
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8149198 |
Liquid crystal display device
Gray scale display is performed by combining time ratio gray scale and voltage gray scale in a liquid crystal display device which performs display in OCB mode. In doing so, one frame is divided...
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8148185 |
Method for fabricating active device array substrate
A method for fabricating an active device array substrate is provided. First, a substrate having a display area and a sensing area is provided. Then, a first patterned conductor layer is formed on...
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8148243 |
Zero capacitor RAM with reliable drain voltage application and method for manufacturing the same
The following discloses and describes a zero capacitor RAM as well as a method for manufacturing the same. The zero capacitor RAM includes an SOI substrate. This SOI substrate is composed of a...
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8143113 |
Omega shaped nanowire tunnel field effect transistors fabrication
A method for forming a nanowire tunnel field effect transistor device includes forming a nanowire connected to a first pad region and a second pad region, the nanowire including a core portion and...
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8143116 |
Thin film transistor array substrate and manufacturing method thereof
A thin film transistor array substrate includes a gate line disposed on a substrate, the gate line comprising a gate electrode including a lower film and an upper film thicker than the lower film,...
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8143170 |
Manufacturing method of semiconductor device
A single crystal semiconductor layer is provided over a base substrate with a second insulating film, a first conductive film, and a first insulating film interposed therebetween; an impurity...
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8143168 |
Etching method and manufacturing method of semiconductor device
The present invention discloses technique of etching selectively a layer containing siloxane. The present invention provides a semiconductor device with reduced operation deterioration due to...
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8143114 |
System and method for source/drain contact processing
System and method for reducing contact resistance and prevent variations due to misalignment of contacts is disclosed. A preferred embodiment comprises a non-planar transistor with source/drain...
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8143118 |
TFT device with channel region above convex insulator portions and source/drain in concave between convex insulator portions
A semiconductor device having a highly responsive thin film transistor (TFT) with low subthreshold swing and suppressed decrease in the on-state current and a manufacturing method thereof are...
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8138030 |
Asymmetric finFET device with improved parasitic resistance and capacitance
A method for forming a fin field effect transistor (finFET) device includes, forming a fin structure in a substrate, forming a gate stack structure perpendicular to the fin structure, and...
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8138064 |
Method for producing silicon film-transferred insulator wafer
A method for producing a silicon film-transferred insulator wafer is disclosed. The method includes a surface activation step of performing a surface activation treatment on at least one of a...
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8138029 |
Structure and method having asymmetrical junction or reverse halo profile for semiconductor on insulator (SOI) metal oxide semiconductor field effect transistor (MOSFET)
A device and method is provided that in one embodiment provides a first semiconductor device including a first gate structure on a first channel region, in which a first source region and a first...
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8134156 |
Semiconductor device including zinc oxide containing semiconductor film
To provide a semiconductor device in which a defect or fault is not generated and a manufacturing method thereof even if a ZnO semiconductor film is used and a ZnO film to which an n-type or p-type...
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8129724 |
Display device including first, second, and third semiconductor films
A display device including a transparent substrate, and a plurality of thin film transistors formed on the transparent substrate, wherein each of the thin film transistors have a gate electrode, a...
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