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7592196 Method for fabricating a CMOS image sensor  
A method for fabricating a CMOS image sensor may include forming an isolation layer defining an active area on a semiconductor substrate, forming first and second gate electrodes in the transistor...
7585695 Lightshield architecture for interline transfer image sensors  
An interline transfer type image sensing device that can be operated at high speed and with low image smear is described. The device incorporates a refractory metal layer which is used for both a...
7585707 Low dark current image sensors with epitaxial SiC and/or carbonated channels for array transistors  
A pixel cell having a substrate with a isolation channel formed of higher carbon concentrate such as SiC or carbonated silicon. The channel comprising SiC or carbonated silicon is provided over the...
7572663 Method for manufacturing CMOS image sensor  
A method for manufacturing a CMOS image sensor is provided. The method can include forming an interlayer dielectric layer on a semiconductor substrate including a gate electrode, photodiode area,...
7547573 Image sensor and method of manufacturing the same  
An image sensor and a method of manufacturing the same, in which, a planarized layer is formed on a semiconductor substrate including a pixel array region, an optical black region, and a logic...
7303938 Gated isolation structure for imagers  
Isolation methods and devices for isolating pixels of an image sensor pixel. The isolation structure and methods include forming a biased gate over a field isolation region and adjacent a pixel of...
7186595 Solid picture element manufacturing method  
A solid picture element that transfers charges completely from a photodiode portion to an amplifying transistor portion to substantially eliminate residual images and methods of its manufacture are...
7071020 Method of forming an elevated photodiode in an image sensor  
The invention provides an elevated photodiode for image sensors and methods of formation of the photodiode. Elevated photodiodes permit a decrease in size requirements for pixel sensor cells while...
7060592 Image sensor and fabricating method thereof  
An image sensor comprising an image sensing device layer, a silicon-on-insulator (SOI) layer, an optical device array and a substrate is provided. The SOI layer has a first surface and a second...
6819042 Organic EL device and method for its manufacture  
There is provided a more expedient and positive desiccating means for an organic EL device. The invention relates to an organic EL device comprising 1) a laminate consisting of an opposed pair of...
6700144 Semiconductor device and method for manufacturing the same  
A semiconductor device includes the following: a semiconductor substrate of a first conduction type; an intrinsic semiconductor layer of the first conduction type formed on the semiconductor...
6680222 Split-gate virtual-phase CCD image sensor with a diffused lateral overflow anti-blooming drain structure and process of making  
Generally, and in one form of the invention, a monolithic solid state image-sensing device is disclosed. The device utilizes only a single layer of polysilicon deposition in its fabrication process...
6674501 Cone protrusion in multi-domain vertically aligned liquid crystal display  
A pixel unit included in a multi-domain vertically aligned liquid crystal display is provided. The pixel unit includes a first insulating substrate having a first side and a second side, a second...
6558985 Charge coupled device and method of fabricating the same  
A CCD and method of fabricating the same, which reads signal charges completely and increases the fill factor of its pixel, to improve the sensitivity. The CCD having photodiodes in matrix form,...
6472255 Solid-state imaging device and method of its production  
A solid-state imaging device comprises: an electric charge transfer portion for transferring an electric charge produced in a photodetector through photoelectric conversion from incident light to...
6440782 Radiation-hard silicon cryo-CMOS process suitable for charge-coupled devices, and a device made according to this process  
A silicon-based radiation-hard cryo-CMOS CCD process suitable for fabrication of devices ( 100 ) with sub-micron feature sizes. A re-oxidized nitride/oxide (RONO) layer ( 49″ ) is preserved in...
6410368 Method of manufacturing a semiconductor device with TFT  
A strip-like first insulating layer is formed on a glass substrate, and a second insulating layer is formed on the first insulating layer. Furthermore, an island-like semiconductor layer is formed...
6114194 Method for fabricating a field device transistor  
A method for fabricating a field device transistor includes forming a gate oxide layer of the field device transistor by performing a thermal oxidation process. By properly controlling the...
6107124 Charge coupled device and method of fabricating the same  
A charge coupled device is disclosed including: a well formed in a substrate, the well having a conductivity opposite to that of the substrate; a first conductivity type of BCCD region formed on...
5926693 Two level transistor formation for optimum silicon utilization  
A semiconductor process in which a trench transistor is formed between a pair of planar transistors such that the source/drain regions of the trench transistor are shared with the source/drain...
5569616 Process for forming an output circuit device for a charge transfer element having tripartite diffusion layer  
An output circuit device for detecting and converting signal charge transferred thereto from a charge transfer section of a CCD into a signal voltage and a method of forming same. A first diffusion...
5516714 Method of making output terminal of a solid-state image device  
A solid-state image device for outputting the charges transferred in one direction by given transfer clock is disclosed. It has a detection port for finally providing signal charges, a first active...
5489545 Method of manufacturing an integrated circuit having a charge coupled device and a MOS transistor  
An integrated circuit comprises a charge coupled device and an MOS transistor. The charge coupled device has a lower and an upper gate electrode on the substrate. The insulating film between the...
5302545 Method of making charge-coupled device and solid-state imaging device having an ONO transfer gate insulating film  
A charge-coupled device comprises transfer gate electrodes separated from a substrate by a multilayer insulating film, and gate electrodes of MIS transistors separated from the substrate by a...
5288651 Method of making semiconductor integrated circuit device including bipolar transistors, MOS FETs and CCD  
A semiconductor integrated circuit device includes bipolar transistors, MOS FETs and a CCD in and on only one semiconductor substrate. At least emitter electrode wiring layers of bipolar...
5260228 Method of making a semiconductor device having a charge transfer device, MOSFETs, and bipolar transistors  
A semiconductor device having a semiconductor substrate of a first conductivity type, an epitaxial layer of a second conductivity type formed on a major surface of the semiconductor substrate, an...
5224134 Charge transfer device having circuit for adjusting the high level of the reset pulse  
A charge transfer device comprises a charge transfer section having a charge transfer region formed in a semiconductor substrate and transfer electrodes formed on the semiconductor substrate, and a...
5215623 Blanking aperture array and method of producing same  
A blanking aperture array for use in an electron beam exposure system and a method of producing the same. An electrode layer is formed on a substrate having shift register devices, and then an...
4859624 Manufacturing method of semiconductor device having CCD and peripheral circuit  
In a method of manufacturing a semiconductor device which has a CCD and its peripheral circuit on the same substrate, a buried channel for a CCD and an impurity diffusion region for peripheral...
4642877 Method for making charge coupled device (CCD)-complementary metal oxide semiconductor (CMOS) devices  
A charge transfer device (CTD)/complementary metal oxide semiconductor (CMOS) process for the production of a signal processing apparatus is disclosed. The process consists of selectively combining...
4345365 Method for fabricating an integrated circuit  
This invention pertains to an improved multilevel integrated circuit wherein a single layer of metal or other conductive material is used for interconnection and formation of the conductors and/or...
4314857 Method of making integrated CMOS and CTD by selective implantation  
A method of forming combination CMOS field effect transistors optionally with a charge transfer device in a single substrate. Different resistivities in the P type wells of the substrate are formed...
4152715 Silicon base CCD-bipolar transistor compatible methods and products  
CCDs and bipolar transistors are formed together on a silicon chip. For n channel CCDs and npn transistors, only a single extra diffusion is necessary in addition to the diffusions used for the...
4148132 Method of fabricating a two-phase charge coupled device  
In a charge coupled device provided with a two-phase overlapping gate structure, charge flow directionality is built into the structure by forming an asymmetrical potential well beneath each gate...
4142925 Method of making silicon-insulator-polysilicon infrared image device utilizing epitaxial deposition and selective etching  
A layer of epitaxial silicon is grown on a silicon growth substrate, a thin layer of silicon dioxide or other suitable insulator is grown (in the case of silicon dioxide) or deposited (for other...
4100672 Method of preparation of SOS extrinsic infrared detector and read-out device  
A silicon-on-sapphire, or silicon-on-spinel (SOS), epitaxial detector and readout structure and method of preparation. The present structure comprises silicon devices formed on sapphire, or spinel,...
4099317 Method for fabricating self-aligned CCD devices and their output self-aligned MOS transistors on a single semiconductor substrate  
The specification describes a self-aligning masking technique for the fabrication of charge coupled device-metal oxide semiconductor (CCD/MOS) transistor combinations. Both the CCD devices and the...
4076557 Method for providing semiconductor devices  
Methods are disclosed for providing self-aligned barrier and conductor regions in conductively connected charge-coupled devices.
4031608 Process for producing semiconductor memory device utilizing selective diffusion of the polycrystalline silicon electrodes  
A semiconductor memory device provided with one transferring electrode, one gate electrode and one diode of a charge coupled device is produced by a process with a reduced number of steps of...
3996658 Process for producing semiconductor memory device  
A distance between two electrodes of a CCD device is reduced to an extremely small value, thereby increasing the memory density, of the CCD device. In the process of the present invention, upon...
3987538 Method of making devices having closely spaced electrodes  
A method is provided for fabricating three-phase charge coupled devices having closely spaced electrodes. A two-level metalization technique is employed, the levels of metal being separated by an...
3967365 Process for the production of a two-phase charge shift assembly  
A two-phase charge shift assembly is described, as well as the process for its production. The process consists of applying an insulating layer to a semiconductor substrate, applying a highly ohmic...
3930893 Conductivity connected charge-coupled device fabrication process  
A method of fabricating conductivity connected charge-coupled devices (C4D's) is disclosed wherein N+ barriers are ion-implanted in an N-type substrate and wherein P++ conductivity connecting...
3897282 Method of forming silicon gate device structures with two or more gate levels  
Semiconductor device structures having multiple gate levels. The gate levels are composed of polycrystalline silicon. A single device may have two or more gate levels, separated by a dielectric, or...
3865652 Method of forming self-aligned field effect transistor and charge-coupled device  
A semiconductor device containing in a single semiconductor body a self-aligned Field Effect Transistor and a Charge-Coupled Array having an improved capacity for storing charges. The device is...
3859717 METHOD OF MANUFACTURING CONTROL ELECTRODES FOR CHARGE COUPLED CIRCUITS AND THE LIKE  
A method of manufacturing charge coupled devices having first and second groups of interdigitated control electrodes insulated from one another.
3836409 UNIPLANAR CCD STRUCTURE AND METHOD  
A CCD structure is made by forming an insulating layer over semiconductor material, forming a substantially uniform layer of polycrystalline semiconductor material over the insulating layer, and...
3770988 SELF-REGISTERED SURFACE CHARGE LAUNCH-RECEIVE DEVICE AND METHOD FOR MAKING  
A device for launching, receiving and amplifying surface charges from a conductor-insulator-semiconductor (CIS) structure and a method for making the device are disclosed. In one embodiment the...
3758794 CHARGE COUPLED SHIFT REGISTERS  
Charge coupled shift registers in which the output stage includes an electrically floating diffusion in the substrate, of different conductivity than the substrate, and coupled to minority carrier...
3834959 Title is not available  
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