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7616356 Image sensor and method of manufacturing thereof  
An image sensor and a method of manufacturing the image sensor, wherein the image sensor can electrically connect a light receiving portion and a printed circuit board (PCB) including circuits by...
7592196 Method for fabricating a CMOS image sensor  
A method for fabricating a CMOS image sensor may include forming an isolation layer defining an active area on a semiconductor substrate, forming first and second gate electrodes in the transistor...
7589349 CMOS image sensor with asymmetric well structure of source follower  
Provided is a CMOS image sensor with an asymmetric well structure of a source follower. The CMOS image sensor includes: a well disposed in an active region of a substrate; a drive transistor having...
7585707 Low dark current image sensors with epitaxial SiC and/or carbonated channels for array transistors  
A pixel cell having a substrate with a isolation channel formed of higher carbon concentrate such as SiC or carbonated silicon. The channel comprising SiC or carbonated silicon is provided over the...
7585694 Manufacturing method of solid-state imaging device  
Provided is a manufacturing method of a CCD solid-state imaging device having such an impurity concentration distribution with which shading is reduced and formation of a buried channel endowed...
7579207 Solid-state imaging device, method of producing the same and camera  
The prevent invention is to provide a solid-state imaging device having a electrode configuration applicable to a progressive scan, and able to reduce a obstruction of incident light at the...
7557024 Single poly CMOS imager  
More complete charge transfer is achieved in a CMOS or CCD imager by reducing the spacing in the gaps between gates in each pixel cell, and/or by providing a lightly doped region between adjacent...
7547573 Image sensor and method of manufacturing the same  
An image sensor and a method of manufacturing the same, in which, a planarized layer is formed on a semiconductor substrate including a pixel array region, an optical black region, and a logic...
7466002 Incident light angle detector for light sensitive integrated circuit  
A detector configuration determines the direction of illumination incident on a photosensitive device. Multiple mask layers include holes which form an interlayer optical path through which...
7394117 Fin field effect transistors including epitaxial fins  
A method of forming a fin field effect transistor on a semiconductor substrate includes forming an active region in the substrate, forming an epitaxial layer on the active region, and removing a...
7382003 Solid-state image pick-up unit and method of manufacturing the same  
A solid-state image pick-up unit comprises: a semiconductor substrate comprising an area in which a photoelectric converting portion is formed; and an electric charge transfer portion that...
7314775 IT-CCD and manufacturing method thereof  
The present invention provides a power-thrifty IT-CCD having a charge transfer electrode area thinned for improving the light reception efficiency of a photoelectric conversion section and being...
7232697 Semiconductor device having enhanced photo sensitivity and method for manufacture thereof  
Provided are a semiconductor device and a method for its manufacture. In one example, the method includes forming an isolation structure having a first refraction index over a sensor embedded in a...
7217601 High-yield single-level gate charge-coupled device design and fabrication  
In accordance with the invention, an electrically conducting charge transfer channel is formed in a semiconductor substrate and an electrically insulating layer is formed on a surface of the...
7214571 Electromechanical electron transfer devices  
An electron transfer device is implemented in a structure which is readily capable of achieving charge transfer cycle frequencies in the range of several hundred MHz or more and which can be formed...
7186595 Solid picture element manufacturing method  
A solid picture element that transfers charges completely from a photodiode portion to an amplifying transistor portion to substantially eliminate residual images and methods of its manufacture are...
7186381 Hydrogen gas sensor  
A hydrogen gas sensor and/or switch fabricated from arrays nanowires composed of metal or metal alloys that have stable metal hydride phases. The sensor and/or switch response times make it quite...
7179676 Manufacturing CCDs in a conventional CMOS process  
A technique for forming Charge-Coupled Devices (CCDs) in a conventional Complementary Metal Oxide Semiconductor (CMOS) process. A number of single-layer polysilicon gates are formed on an as-grown,...
7176067 Methods of fabricating fin field effect transistors  
A method of forming a fin field effect transistor on a semiconductor substrate includes forming an active region in the substrate, forming an epitaxial layer on the active region, and removing a...
7154134 Adjustable CCD charge splitter  
An adjustable charge coupled device (CCD) charge splitter includes a channel control structure and an associated plurality of output channels. Control signals applied to the channel control...
7098066 Charge coupled device producing method  
A charge coupled device of the present invention includes a charge transfer region layer and a gate insulation film that are formed in the stated order on a semiconductor substrate, first gate...
6979588 Method for manufacturing CMOS image sensor having microlens therein with high photosensitivity  
The method for manufacturing a CMOS image sensor is employed to prevent bridge phenomenon between adjacent microlenses by employing openings between the microlenses. The method includes the steps...
6924233 Phosphor deposition methods  
Methods of coating a semiconductor device with phosphor particles are disclosed. In the methods, a bath is provided which contains suspended particles of a first phosphor material and suspended...
6849476 Method of manufacturing a solid-state imaging device  
A frame transfer-type solid imaging device is provided, which can be operated without reducing the transfer efficiency or the transfer charge quantity. A plurality of N-type regions 5 ...
6803261 Photoelectric converter and fabrication method thereof  
There is provided a laminated type photoelectric converter whose sensitivity is enhanced uniformly. In the photoelectric converter in which a photoelectric conversion device is laminated above a...
6784015 Solid state image sensor and method for fabricating the same  
In a solid state image sensor, tranfer electrodes are formed by selectively etch-removing a single layer of conducting electrode material at a plurality of first regions which divide the single...
6730567 Dynamic memory based on single electron storage  
A method for forming edge-defined structures with sub-lithographic dimensions which are used to further form conduction channels and/or storage structures in memory cells. Sacrificial silicon...
6680222 Split-gate virtual-phase CCD image sensor with a diffused lateral overflow anti-blooming drain structure and process of making  
Generally, and in one form of the invention, a monolithic solid state image-sensing device is disclosed. The device utilizes only a single layer of polysilicon deposition in its fabrication process...
6677177 Solid state image sensor and method for manufacturing the same  
A solid state image sensor that prevents a reduction of transfer efficiency even if pixel size is reduced. A first semiconductor region is formed on a semiconductor substrate and a second...
6670205 Method of fabricating image sensor equipped with lens  
Methods of fabricating an image sensor equipped with a lens are disclosed. The disclosed methods can attach a lens directly onto a device without fabricating a separate lens module in a fabrication...
6649454 Method for fabricating a charge coupled device  
A process for forming a portion of a charge coupled device (CCD) is described. More particularly, wells ( 105 ) are formed self-aligned under gate stacks ( 132, 134 ). By forming wells ( 105 )...
6627476 Solid state imaging device and method for manufacturing the same  
A charge storing layer of a photodiode having an N-type conductivity includes an N + -type additional implant area in the vicinity of a junction between the charge storing layer and an isolation...
6551910 Method of manufacturing solid-state image pickup device  
In a method of manufacturing a solid-state image pickup device having a virtual gate structure, in a process of forming a profile of a sensor portion, when ion implantation to form a p+ type layer...
6534335 Optimized low leakage diodes, including photodiodes  
A photodiode for use in an imager having an improved charge leakage. The photodiode has a doped region that is spaced away from the field isolation to minimize charge leakage. A second embodiment...
6472255 Solid-state imaging device and method of its production  
A solid-state imaging device comprises: an electric charge transfer portion for transferring an electric charge produced in a photodetector through photoelectric conversion from incident light to...
6455345 Charge transfer device and a manufacturing process therefor  
This invention provides a manufacturing process for a charge transfer device comprising an N-type well formed in a P-type well on a semiconductor substrate for transferring a signal charge, an N+...
6448592 Charge coupled device, and method of manufacturing such a device  
It is known in charge coupled devices to use a dual layer of silicon oxide and silicon nitride as the gate dielectric. Since silicon nitride is practically impermeable to hydrogen, the nitride...
6428650 Cover for an optical device and method for making same  
An optical device is enclosed within a package or module having an optically transmissive or transparent cover that is sealed with an adhesive preform that has been pre-applied onto the bonding...
6417531 Charge transfer device with final potential well close to floating diffusion region  
A charge transfer device has a charge transfer region under charge transfer electrodes for stepwise conveying charge packets through potential wells to a floating diffusion region, and the charge...
6403993 Charge coupled image sensor with u-shaped gates  
A method and apparatus of forming adjacent, non-overlapping CCD electrodes within an image sensing device such the electrodes are U-shaped. The device provided by the disclosed method employs a...
6395587 Fully amorphized source/drain for leaky junctions  
A semiconductor device having a silicon-on-insulator (SOI) structure includes a field-effect transistor having amorphized source and drain regions formed by implanting silicon or germanium ions...
6380005 Charge transfer device and method for manufacturing the same  
In a charge transfer device of the two-layer electrode, two-phase drive type, an N −− semiconductor region 108 and a first insulator film 103 are formed on a P-type semiconductor substrate...
6306676 Method of making self-aligned, high-enegry implanted photodiode for solid-state image sensors  
A method and apparatus of making high energy implanted photodiode that is self aligned with the transfer gate, the high energy implant is defined by providing a substrate, or well, of a first...
6218211 Method of fabricating a thinned CCD  
An integrated circuit device structure comprises a semiconductor plateau containing an active region subjacent its front side, an electrode structure at the front side of the plateau, and an...
6210990 Method for fabricating solid state image sensor  
Method for fabricating a solid state image sensor, which can improve a charge transfer efficiency of an end terminal, including the steps of (1) providing a first conduction type substrate having a...
6140147 Method for driving solid-state imaging device  
A method for driving a solid-state imaging device such as a CCD (Charge Coupled Device) which facilitates control of a blooming suppressing voltage and can reduce a voltage required for shuttering....
6107124 Charge coupled device and method of fabricating the same  
A charge coupled device is disclosed including: a well formed in a substrate, the well having a conductivity opposite to that of the substrate; a first conductivity type of BCCD region formed on...
6090640 Method of making CCD-type solid-state pickup device  
A first silicon oxide film, silicon nitride film, and polycrystalline silicon film are formed on the entire surface of a semiconductor substrate. Then, the polycrystalline silicon film is etched to...
6054341 Method of manufacturing charge-coupled device having different light-receiving region and charge-isolating layer structures  
A charge-coupled device includes a first P-type well formed in an N-type semiconductor substrate, a second P-type well formed repeatedly the first P-type well region, a charge-transfer region...
6046069 Solid-state image pick-up device and method for manufacturing the same  
A solid-state image pick-up device having a structure in which the amount of transferred charges is not reduced in a vertical CCD portion even if a pixel portion is made finer, and a method for...
Matches 1 - 50 out of 142 1 2 3 >