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Match Document Document Title
9029930 FinFET device with epitaxial structure  
A FinFET device includes a substrate, a fin, and isolation regions on either side of the fin. The device also includes sidewall spacers above the isolation regions and formed along the fin...
9018086 Semiconductor device having a metal gate and fabricating method thereof  
The present invention provides a method of forming a semiconductor device having a metal gate. A substrate is provided and a gate dielectric and a work function metal layer are formed thereon,...
8987041 Method for manufacturing solid-state imaging device  
Certain embodiments provide method for manufacturing a solid-state imaging device, including forming an electrode and forming a second impurity layer. The electrode is formed on a semiconductor...
8969875 Thin film transistor substrate and method for fabricating the same  
The present invention relates to a thin film transistor substrate and method for fabricating the same which can secure an alignment margin and reduce the number of mask steps. A thin transistor...
8956907 Method for producing field effect transistor, field effect transistor, display device, image sensor, and X-ray sensor  
There is provided a method of fabricating a field effect transistor including: forming a first oxide semiconductor film on a gate insulation layer disposed on a gate electrode; forming a second...
8952427 Range sensor and range image sensor  
A range image sensor capable of improving its aperture ratio and yielding a range image with a favorable S/N ratio is provided. A range image sensor RS has an imaging region constituted by a...
8940575 Method of producing semiconductor device, solid-state imaging device, method of producing electric apparatus, and electric apparatus  
There is provided a method of producing a semiconductor device. The method includes the steps of: forming a first hard mask having an opening above a substrate; forming a sacrificial film above a...
8785240 Light-emitting apparatus and production method thereof  
Provided is a method of producing a light-emitting apparatus having a field effect transistor for driving an organic EL device, the field effect transistor including an oxide semiconductor...
8772844 Solid-state imaging device  
Capacitance between a detection capacitor and a reset transistor is the largest among the capacitances between the detection capacitor and transistors placed around the detection capacitor. In...
8716719 Solid-state imaging device, method of manufacturing solid-state imaging device, and electronic apparatus  
Provided is a solid-state imaging device including: a first-conductivity-type substrate; a second-conductivity-type well formed in a surface side of the first-conductivity-type substrate; a...
8704325 Pixel sensors of multiple pixel size and methods of implant dose control  
CMOS pixel sensors with multiple pixel sizes and methods of manufacturing the CMOS pixel sensors with implant dose control are provided. The method includes forming a plurality of pixel sensors in...
8703556 Method of making a FinFET device  
A FinFET device is fabricated by first receiving a FinFET precursor. The FinFET precursor includes a substrate and fin structures on the substrate. A sidewall spacer is formed along sidewall of...
8697500 Method for manufacturing solid-state image sensor  
A method for manufacturing a solid-state image sensor includes forming a gate electrode structure including a gate electrode on a gate insulating film formed on a semiconductor substrate, and...
8691637 Solid-state image pickup device and method of manufacturing same  
Disclosed herein is a solid-state image pickup device including: a photoelectric conversion section configured to convert incident light into a signal charge; a transfer transistor configured to...
8658457 Method of producing semiconductor device, solid-state imaging device, method of producing electric apparatus, and electric apparatus  
There is provided a method of producing a semiconductor device. The method includes the steps of: forming a first hard mask having an opening above a substrate; forming a sacrificial film above a...
8658477 Method for manufacturing a semiconductor device  
An exposure mask according to an embodiment of the invention includes a first transmission region where a plurality of dots through which light is shielded or transmitted are arrayed into a matrix...
8653529 Semiconductor device and method of manufacturing the same  
In a semiconductor device in which a glass substrate is attached to a surface of a semiconductor die with an adhesive layer being interposed therebetween, it is an object to fill a recess portion...
8581306 Coupled electron shuttle providing electrical rectification  
A nanoscale electron shuttle with two elastically mounted conductors positioned within a gap between conductors produces asymmetrical electron conduction between the conductors when the conductors...
8574941 Method for manufacturing solid-state imaging device  
A method for manufacturing a solid-state imaging device in which a charge generator that detects an electromagnetic wave and generates signal charges is formed on a semiconductor substrate and a...
8551810 Method for manufacturing semiconductor device  
In a transistor including an oxide semiconductor film, a metal oxide film for preventing electrification which is in contact with the oxide semiconductor film and covers a source electrode and a...
8536625 Electronic shutter with photogenerated charge extinguishment capability for back-illuminated image sensors  
An electronic image sensor includes a semiconductor substrate having a first surface configured for accepting illumination to a pixel array disposed in the substrate. An electrically-doped channel...
8519456 Solid-state image pickup device, image pickup apparatus including the same, and method of manufacturing the same  
A solid-state image pickup device in which electric charges accumulated in a photodiode conversion element are transferred to a second diffusion layer through a first diffusion layer.
8383443 Non-uniform gate dielectric charge for pixel sensor cells and methods of manufacturing  
A non-uniform gate dielectric charge for pixel sensor cells, e.g., CMOS optical imagers, and methods of manufacturing are provided. The method includes forming a gate dielectric on a substrate....
8383448 Method of fabricating metal oxide semiconductor device  
A method of fabricating an MOS device is provided. First, gates and source/drain regions of transistors are formed on a substrate. A photodiode doped region and a floating node doped region are...
8372699 Method for forming a split-gate memory cell  
A method for forming a semiconductor device includes forming a first semiconductor layer over a substrate, forming a first photoresist layer over the first semiconductor layer, and using only a...
8362565 Memory element with small threshold voltage variance and high-speed logic element with low power consumption  
A semiconductor device includes: a semiconductor layer; an element isolation region formed in the semiconductor layer for separation between a memory element part and a logic element part; first...
8361898 Bonding pad structure for back illuminated optoelectronic device and fabricating method thereof  
A bonding pad structure for an optoelectronic device. The bonding pad structure includes a carrier substrate having a bonding pad region and an optoelectronic device region. An insulating layer is...
8354292 CMOS image sensor having a crosstalk prevention structure and method of manufacturing the same  
In a method of manufacturing a CMOS image sensor, a P type epitaxial layer is formed on an N type substrate. A deep P+ type well layer is formed in the P type epitaxial layer. An N type deep...
8334195 Pixel sensors of multiple pixel size and methods of implant dose control  
CMOS pixel sensors with multiple pixel sizes and methods of manufacturing the CMOS pixel sensors with implant dose control are provided. The method includes forming a plurality of pixel sensors in...
8323860 Solid-state imaging device producing method and exposure mask  
A solid-state imaging device producing method includes the steps of: applying a resist material onto a substrate in which a channel region is formed; forming a resist layer by exposure and...
8319878 Solid-state imaging device and its production method  
A solid-state imaging device of the type having photoelectric conversion elements formed in a matrix pattern on a semiconductor substrate, vertical transfer elements each of which reads signal...
8304776 Thin film transistor substrate and method for fabricating the same  
The present invention relates to a thin film transistor substrate and method for fabricating the same which can secure an alignment margin and reduce the number of mask steps. A thin transistor...
8293561 Image pickup device and image pickup system  
There is provided an image pickup device, including a photoelectric conversion element converting light into charges, a transfer gate for transferring the converted charges to a floating node, a...
8278131 Method and apparatus for dark current and blooming supression in 4T CMOS imager pixel  
A method and apparatus for operating an imager pixel that includes the act of applying a relatively small first polarity voltage and a plurality of pulses of a second polarity voltage on the gate...
8217431 Solid-state image pickup device for preventing cross-talk between adjacent pixels and manufacturing method thereof  
A solid-state image pickup device for preventing crosstalk between adjacent pixels by providing an overflow barrier at the deep potion of a substrate. A partial P type region is provided at the...
8193031 Method for manufacturing semiconductor device  
An object is to provide a semiconductor device having stable electric characteristics in which an oxide semiconductor is used. An oxide semiconductor layer is subjected to heat treatment for...
8173476 Image pickup device and image pickup system  
There is provided an image pickup device, including a photoelectric conversion element converting light into charges, a transfer gate for transferring the converted charges to a floating node, a...
8124443 Organic diodes and materials  
Diodes having p-type and n-type regions in contact, having at least one of either the p-type region or n-type region including a conjugated organic material doped with an immobile dopant,...
8119436 Image sensor having optical waveguide structure and method for manufacturing the same  
An image sensor and a method for manufacturing the same are disclosed. The image sensor can include a semiconductor substrate that includes photodiodes arranged for each unit pixel; an interlayer...
8115851 Solid-state image capturing apparatus, method for manufacturing same, and electronic information device  
A solid-state image capturing apparatus according to the present invention includes: a plurality of photoelectric conversion sections; a charge accumulation section; and a charge readout section,...
8114718 Antiblooming imaging apparatus, systems, and methods  
Apparatus, systems, and methods are described to assist in reducing dark current in an active pixel sensor. In various embodiments, a potential barrier arrangement is configured to block the flow...
8053287 Method for making multi-step photodiode junction structure for backside illuminated sensor  
A method of making a backside illuminated sensor is provided. A substrate is provided and a high energy ion implantation is performed over the substrate to implant a first doped region. A layer is...
8031232 Image pickup apparatus including a first image formation system and a second image formation system, method for capturing image, and method for designing image pickup apparatus  
The present invention relates to an image pickup apparatus, a method for capturing an image, and a method for designing the image pickup apparatus capable of realizing a fixed focal length image...
8021908 Method and apparatus for dark current and blooming suppression in 4T CMOS imager pixel  
A method and apparatus for operating an imager pixel that includes the act of applying a relatively small first polarity voltage and a plurality of pulses of a second polarity voltage on the gate...
8003506 Single poly CMOS imager  
More complete charge transfer is achieved in a CMOS or CCD imager by reducing the spacing in the gaps between gates in each pixel cell, and/or by providing a lightly doped region between adjacent...
8004020 Solid-state image capturing device, camera module and electronic information device  
A solid-state image capturing device includes a plurality of electrode pads for inputting and outputting a signal or voltage from and to the outside, a plurality of photoelectric conversion...
7998828 Method of forming metal ion transistor  
A method of forming a metal ion transistor comprises forming a first electrode in a first isolation layer; forming a second isolation layer over the first isolation layer; forming a first cell...
7993952 Charge transfer device  
A charge transfer device 1 has an P-type region, an N-type well provided to the surficial portion of the P-type region, and transfer electrodes having P-type conductivity, provided over the N-type...
7977141 Solid-state image pickup device and method of manufacturing the same  
A method of manufacturing a solid-state image pickup device according to an embodiment includes forming first and second holes in a semiconductor substrate, forming insulating films on surfaces of...
7968389 Fabrication methods of thin film transistor substrates  
Methods for manufacturing thin film transistor arrays utilizing three steps of lithography and one step of laser ablation while the lithography procedure is used four to five times in conventional...

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