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8145020 Semiconductor device  
A semiconductor device includes a direct light-triggered thyristor triggered by an optical gate signal, a first optical fiber connected to the direct light-triggered thyristor and through which the...
8138028 Method for manufacturing a phase change memory device with pillar bottom electrode  
A method for manufacturing a mushroom-cell type phase change memory is based upon manufacturing a pillar of bottom electrode material upon a substrate including an array of conductive contacts in...
8124480 Methods of fabricating silicon carbide devices incorporating multiple floating guard ring edge terminations  
Edge termination for silicon carbide devices has a plurality of concentric floating guard rings in a silicon carbide layer that are adjacent and spaced apart from a silicon carbide-based...
8071450 Method for forming voltage sustaining layer with opposite-doped islands for semiconductor power devices  
A method of manufacturing a semiconductor device includes preparing a semiconductor wafer with a substrate of a first conductivity type and forming a first epitaxial layer of the first conductivity...
7923308 Methods of forming conductive contacts to source/drain regions and methods of forming local interconnects  
The invention comprises methods of forming a conductive contact to a source/drain region of a field effect transistor, and methods of forming local interconnects. In one implementation, a method of...
7915637 Switching materials comprising mixed nanoscopic particles and carbon nanotubes and method of making and using the same  
An improved switching material for forming a composite article over a substrate is disclosed. A first volume of nanotubes is combined with a second volume of nanoscopic particles in a predefined...
7851274 Processing technique to improve the turn-off gain of a silicon carbide gate turn-off thyristor  
A structure and method for a silicon carbide (SiC) gate turn-off (GTO) thyristor device operable to provide an increased turn-off gain comprises a cathode region, a drift region having an upper...
7763481 Liquid crystal display and fabrication method thereof  
A liquid crystal display and a fabricating method thereof are provided. The liquid crystal display includes a first substrate having a pixel portion and a pad portion; a gate line and a data line...
7670881 Method of manufacturing a semiconductor device  
At present, a forming process of a base film through an amorphous silicon film is conducted in respective film forming chambers in order to obtain satisfactory films. When continuous formation of...
7491586 Semiconductor device with leakage implant and method of fabrication  
A method of fabricating a thyristor-based memory may include forming different opposite conductivity-type regions in silicon for defining a thyristor and an access device in series relationship. An...
7459365 Method for fabricating a semiconductor component  
The fabrication of a semiconductor component having a semiconductor body in which is arranged a very thin dielectric layer having sections which run in the vertical direction and which extend very...
7442584 Isolated vertical power device structure with both N-doped and P-doped trenches  
A method for manufacturing an isolated vertical power device includes forming, in a back surface of a first conductivity type substrate, back isolation wall trenches that surround a conduction...
7419877 Methods of fabricating silicon carbide devices including multiple floating guard ring edge termination  
Edge termination for silicon carbide devices has a plurality of concentric floating guard rings in a silicon carbide layer that are adjacent and spaced apart from a silicon carbide-based...
7361570 Semiconductor device having an implanted precipitate region and a method of manufacture therefor  
The present invention provides a semiconductor device, a method of manufacture therefor and an integrated circuit including the same. The semiconductor device 100, among other things, may include a...
7351614 Deep trench isolation for thyristor-based semiconductor device  
A thyristor-based semiconductor device includes a filled trench separating and electrically insulating adjacent thyristor control ports. According to an example embodiment of the present invention,...
7264986 Microelectronic assembly and method for forming the same  
According to one aspect of the present invention, a method is provided for forming a microelectronic assembly. The method comprises forming first and second trenches on a semiconductor substrate,...
7195959 Thyristor-based semiconductor device and method of fabrication  
A thyristor-based semiconductor memory device may comprise at least a region thereof, e.g., a p-base region, having high ionization energy impurity, such as a dopant. This high ionization energy...
7186381 Hydrogen gas sensor  
A hydrogen gas sensor and/or switch fabricated from arrays nanowires composed of metal or metal alloys that have stable metal hydride phases. The sensor and/or switch response times make it quite...
7118982 Emitter and method of making  
An emitter includes an electron source and a cathode. The cathode has an emissive surface. The emitter further includes a continuous anisotropic conductivity layer disposed between the electron...
7037814 Single mask control of doping levels  
In an integrated circuit, dopant concentration levels are adjusted by making use of a perforated mask. Doping levels for different regions across an integrated circuit can be differently defined by...
6943406 Semiconductor device  
According to the present invention, there is provided a semiconductor device having, a semiconductor substrate having a surface on which an insulating layer is formed, a first-conductivity-type...
6927101 Field-effect-controllable semiconductor component and method for fabricating the component  
A method for fabricating a field-effect-controllable semiconductor component includes providing a configuration having a semiconductor body with a front side, a rear side, a first terminal zone of...
6924177 Method for producing a thyristor  
A thyristor having a first zone, a second zone, a third zone, and a fourth zone. At least one control electrode is connected to the second and/or third zone. In order to reduce the static and...
6838300 Chemical treatment of low-k dielectric films  
A method of forming an integrated circuit including an organosilicate low dielectric constant insulating layer (40) formed of a substitution group depleted silicon oxide, such as an organosilicate...
6828177 Gate pad protection structure for power semiconductor device and manufacturing method therefor  
A method for manufacturing a gate pad protection structure applied in a power semiconductor device is provided. The method includes steps of (a) forming a gate oxide layer on a substrate, (b)...
6773968 High density planar SRAM cell using bipolar latch-up and gated diode breakdown  
Area efficient static memory cells and arrays containing p-n-p-n or n-p-n-p transistors which can be latched-up in a bistable on state. Each transistor memory cell includes a gate which is pulse...
6770910 Thin-film transistor array structure  
A TFT array structure comprises a Thin-Film Transistor, a data line, a scanning line, a pixel electrode and an auxiliary electrode. The data line is connected to the drain of the Thin-Film...
6762080 Method of manufacturing a semiconductor device having a cathode and an anode from a wafer  
In a method of manufacturing a semiconductor element (6) having a cathode (3) and an anode (5), the starting material used is a relatively thick wafer (1) to which, as a first step, a barrier...
6552360 Method and circuit layout for reducing post chemical mechanical polishing defect count  
A method and a circuit layout on a substrate of a semiconductor wafer, suitable for reducing defects during a chemical mechanical polishing process. On the substrate, the circuit layout comprises a...
6534380 Semiconductor substrate and method of manufacturing the same  
Before a semiconductor substrate and a base substrate is directly bonded to one another, in a protective film removing step, a contamination protective film formed on the semiconductor substrate to...
6489187 Method for setting the breakover voltage of a thyristor  
The effective doping profile of a finished thyristor is altered with helium ions radiated into a region provided for triggering the thyristor in such a way that the breakover voltage for overhead...
6306690 Process flow to integrate high and low voltage peripheral transistors with a floating gate array  
The invention comprises an integrated circuit including integral high and low-voltage peripheral transistors and a method for making the integrated circuit. In one aspect of the invention, a method...
5994171 Method of making lateral components in power semiconductor devices  
A method for adjusting the gain or the sensitivity of a lateral component formed in the front surface of a semiconductor wafer, having a first conductivity type, includes not doping or overdoping,...
5970324 Methods of making dual gated power electronic switching devices  
Methods for making semiconductor switching devices are disclosed. The switching device is designed and constructed to include, for example, a highly interdigitated cathode/gate structure on both...
5940699 Process of fabricating semiconductor device  
A process of fabricating a semiconductor device, includes the steps of: forming a side wall insulating film on a side portion of a gate electrode formed on a silicon substrate; forming a...
5766966 Power transistor device having ultra deep increased concentration region  
A cellular insulated gate bipolar transistor ("IGBT") device employs increased concentration in the active region between spaced bases to a depth greater than the depth of the base regions. The...
5510274 Method of controlling a carrier lifetime in a semiconductor switching device  
A semiconductor layer, through which a main current flows, is so structured that a carrier life time in the semiconductor layer is ununiform in accordance with a predetermined distribution of the...
5422288 Method of doping a JFET region in a MOS-gated semiconductor device  
A MOS-gated semiconductor device may be manufactured by a process in which the neck region of the device is doped through a previously deposited polysilicon gate. In the method of the present...
5420045 Process for manufacturing thyristor with adjustable breakover voltage  
Thyristor with an npnp layer sequence, in which a zone (14) enriched with generation and recombination centers and formed by proton irradiation is provided underneath the triggering contact (7) in...
5292672 Method of manufacturing an insulated gate bipolar transistor  
In the present invention, baneful influences such as the reduction of the threshold voltage due to the irradiation of an ionizing radiation such as an electron beam and a light ion beam are removed...
5284780 Method for increasing the electric strength of a multi-layer semiconductor component  
For increasing the electric strength of a semiconductor component that comprises a sequence of semiconductor layers of alternating conductivity type and which is adapted to be charged with a...
5262336 IGBT process to produce platinum lifetime control  
For IGBT, MCT or like devices, the substrate is formed with P+, N+ and N- layers and PN diffusions to define body and source regions in the N-layer and a MOS-gated channel at the upper surface. The...
5227315 Process of introduction and diffusion of platinum ions in a slice of silicon  
A process is provided for introduction and diffusion of platinum ions in a slice of silicon material. The slice of silicon is subjected to a succession of thermal steps at high temperature for the...
5171696 Semiconductor device and method of manufacturing the same  
The present invention direct to a semiconductor device and a method of manufacturing the same. According to the semiconductor device of the present invention, a first region is partially formed on...
5017508 Method of annealing fully-fabricated, radiation damaged semiconductor devices  
A method and apparatus for annealing devices having radiation induced damage is disclosed. A device is exposed to electron irradiation to induce damage to the active area. The device is then...
4987098 Method of producing a metal-oxide semiconductor device  
The present invention relates to a method of producing a metal-oxide semiconductor device with improved capacity for preventing an actuation of a parasitic bipolar transistor. In the present...
4987087 Process for manufacturing a thyristor with proton irradiation  
A process for making a thyristor device protected against breakover firing is to generate in the semiconductor body (1) of the thyristor an area (A) which has a lower breakdown voltage than the...
4806497 Method for producing large-area power semiconductor components  
A method for producing large-area power semiconductor components, wherein at least two irradiation processes (neutron irridiation, ion implantation electron, γor proton irradiation) are used to ...
4792530 Process for balancing forward and reverse characteristic of thyristors  
A thyristor having a beveled edge extending from its top surface is irradiated by an electron beam which is applied only to the beveled surface and is also electron beam irradiated from its bottom...
4684413 Method for increasing the switching speed of a semiconductor device by neutron irradiation  
A method for decreasing the turnoff time in a crystalline semiconductor region within a semiconductor device comprises initially providing a semiconductor region having a predetermined density of...
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