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7622738 Display device having a multi-layer conductive layer and manufacturing method therefore  
An display device having a thin film transistor with improved characteristics comprising a gate conductor including a gate electrode formed on an insulating substrate; a gate insulating layer...
7615417 Triggered silicon controlled rectifier for RF ESD protection  
An ESD protection circuit is formed at the input/output interface contact of an integrated circuit to protect the integrated circuit from damage caused by an ESD event. The ESD protection circuit...
7598566 Trench gate field effect devices  
The present invention provides a technique for accumulating minority carriers in the body region, that is, the intermediate region interposed between the top region and the deep region, and thus...
7595520 Capping layer for a magnetic tunnel junction device to enhance dR/R and a method of making the same  
An MTJ in an MRAM array or TMR read head is disclosed in which a low magnetization capping layer is a composite having a NiFeHf inner layer formed on a NiFe or CoFeB/NiFe free layer, a Ta middle...
7579689 Integrated circuit package, and a method for producing an integrated circuit package having two dies with input and output terminals of integrated circuits of the dies directly addressable for testing of the package  
An integrated circuit package ( 1 ) comprising first and second dies on a laminate ( 5 ) in a resin encapsulating housing ( 6 ) comprises a digital signal processing integrated circuit ( 8 )...
7573077 Thyristor-based semiconductor memory device with back-gate bias  
In accordance with an embodiment of the present invention, a thyristor-based semiconductor memory device may comprise an array of thyristor-based memory formed in an SOI wafer. A supporting...
7569431 Semiconductor device and manufacturing method thereof  
A semiconductor device and method of manufacturing the same includes an n − -single crystal silicon substrate, with an oxide film selectively formed thereon. On the oxide film, gate polysilicon...
7566595 Method of making and using guardringed SCR ESD protection cell  
Methods and circuits are disclosed for protecting an electronic circuit from ESD damage using an SCR ESD cell. An SCR circuit is coupled to a terminal of an associated microelectronic circuit for...
7564072 Semiconductor device having junction termination extension  
A semiconductor device includes an anode electrode in Schottky contact with an n-type drift layer formed in an SiC substrate and a JTE region formed outside the anode electrode. The JTE region is...
7563653 ESD protection for high voltage applications  
An electrostatic discharge (ESD) protection device includes a diode located in a substrate and an N-type metal oxide semiconductor (NMOS) device located in the substrate adjacent the diode, wherein...
7556976 Method of fabricating semiconductor devices employing at least one modulation doped quantum well structure and one or more etch stop layers for accurate contact formation  
A method of fabricating a semiconductor device includes the steps of forming (or providing) a series of layers formed on a substrate, the layers including a first plurality of layers including an...
7554159 Electrostatic discharge protection device and method of manufacturing the same  
An electrostatic discharge protection device that includes a semiconductor substrate of a first dopant type, at least one source/drain pair of a second dopant type formed in the substrate, wherein...
7544544 Low capacitance two-terminal barrier controlled TVS diodes  
A two-terminal barrier controlled TVS diode has a depletion region barrier blocking majority carrier flow through the channel region at the vicinity of the cathode region at bias levels below the...
7534666 High voltage non punch through IGBT for switch mode power supplies  
A process for forming an NPT IGBT in a thin N type silicon wafer in which the bottom surface of a thin silicon wafer (100 microns thick or less) has a shallow reduced lifetime region in its bottom...
7531389 Method of manufacturing semiconductor device  
Disclosed herein is a method of manufacturing a semiconductor device having a thyristor formed by joining a first p-type semiconductor layer, a first n-type semiconductor layer, a second p-type...
7504286 Semiconductor memory devices and methods for fabricating the same  
A method is provided for fabricating a memory device. A semiconductor substrate is provided which includes a first well region having a first conductivity type, a second well region having the...
7498615 Electro-static discharge protection circuit and semiconductor device having the same  
An electro-static discharge protection circuit includes a thyristor mode ensuring circuit and a thyristor rectifier circuit. The thyristor mode ensuring circuit includes a capacitive element...
7498658 Trench gate type insulated gate bipolar transistor  
A trench gate type IGBT includes: a first semiconductor layer; a second semiconductor on the first semiconductor layer; a third semiconductor on the second semiconductor layer; trenches for...
7491586 Semiconductor device with leakage implant and method of fabrication  
A method of fabricating a thyristor-based memory may include forming different opposite conductivity-type regions in silicon for defining a thyristor and an access device in series relationship. An...
7491584 ESD protection device in high voltage and manufacturing method for the same  
Electrostatic discharge (ESD) protection device in high voltage and the relevant manufacturing method is disclosed. The mentioned ESD protection device is disposed to bridge a ground and an input...
7488626 Thyristor device with carbon lifetime adjustment implant and its method of fabrication  
In a method of fabricating a semiconductor memory device, a thyristor may be formed in a layer of semiconductor material. Carbon may be implanted and annealed in a base-emitter junction region for...
7488627 Thyristor-based memory and its method of operation  
A thyristor-based memory may comprise a thyristor accessible via an access transistor. A temperature dependent bias may be applied to at least one of a supporting substrate and an electrode...
7479414 Electrostatic discharge protection device for digital circuits and for applications with input/output bipolar voltage much higher than the core circuit power supply  
An electrostatic discharge (ESD) device and method is provided. The ESD device can comprise a substrate doped to a first conductivity type, an epitaxial region doped to the second conductivity...
7442584 Isolated vertical power device structure with both N-doped and P-doped trenches  
A method for manufacturing an isolated vertical power device includes forming, in a back surface of a first conductivity type substrate, back isolation wall trenches that surround a conduction...
7439117 Method for designing a micro electromechanical device with reduced self-actuation  
A method is described for designing a micro electromechanical device in which the risk of self-actuation of the device in use is reduced. The method includes locating a first conductor in a plane...
7436003 Vertical thyristor for ESD protection and a method of fabricating a vertical thyristor for ESD protection  
A vertical thyristor for ESD protection comprises an anode ( 10 ), a cathode ( 16 ), a first gate electrode ( 12 ) and a second gate electrode ( 14 ). The first ( 12 ) and second ( 14 ) gate...
7423299 Semiconductor devices with a field shaping region  
A semiconductor device, for example a diode ( 200 ), having a pn junction ( 101 ) has an insulating material field shaping region ( 201 ) adjacent, and possibly bridging, the pn junction. The field...
7402494 Method for fabricating high voltage semiconductor device  
A method for fabricating a high voltage semiconductor device, which comprises a semiconductor substrate; a gate insulation layer formed on the semiconductor substrate; and a gate electrode formed...
7387918 Method of forming a silicon controlled rectifier structure with improved punch through resistance  
When a high-voltage, such as from an ESD pulse, is placed across a silicon controlled rectifier, which includes an NPN transistor and a PNP transistor that is connected to the NPN transistor, the...
7385250 Semiconductor device  
A semiconductor device comprises a semiconductor portion including first semiconductor layers of a first conduction type and second semiconductor layers of a second conduction type alternately...
7374974 Thyristor-based device with trench dielectric material  
A thyristor-based semiconductor device includes a thyristor body that has at least one region in the substrate and a thyristor control port in a trenched region of the device substrate. According...
7364971 Method for manufacturing semiconductor device having super junction construction  
A semiconductor device includes a body region, a drift region having a first part and a second part, and a trench gate electrode. The body region is disposed on the drift region. The first and...
7351614 Deep trench isolation for thyristor-based semiconductor device  
A thyristor-based semiconductor device includes a filled trench separating and electrically insulating adjacent thyristor control ports. According to an example embodiment of the present invention,...
7339203 Thyristor and method of manufacture  
A thyristor and a method for manufacturing the thyristor that includes a gate region extending from the first major surface into a semiconductor substrate and an anode region extending from the...
7332749 Junction-gate type static induction thyristor and high-voltage pulse generator using such junction-gate type static induction thyristor  
A compact, inexpensive static induction thyristor (SIThy) which is less likely to be broken down at a high voltage rise-up rate during operation and which is used in a high-voltage pulse generator...
7327541 Operation of dual-directional electrostatic discharge protection device  
A two-terminal ESD protection structure formed by an arrangement of five adjacent semiconductor regions ( 112, 114, 116, 118 , and 120 ) of alternating conductivity type provides protection...
7316941 Semiconductor device with a MOSFET formed in close proximity to a bipolar device and method of manufacture  
In one embodiment, a thyristor device may be formed in series relationship with a MOSFET. Alternating regions of opposite conductivity type may be formed in semiconductor material for defining...
7297558 Method of manufacturing semiconductor device  
A W plug ( 24 ) is formed and a W oxidation preventing barrier metal film ( 25 ) is formed thereon. After that, an SiON film ( 27 ) thinner than the W oxidation preventing barrier metal film ( 25 )...
7285804 Thyristor-based SRAM  
An integrated circuit structure includes a semiconductor substrate and a horizontal semiconductor fin on top of the semiconductor substrate. An access transistor gate and a thyristor gate are on...
7285805 Low reference voltage ESD protection device  
In a low voltage ESD protection device, an extra control electrode is created by not connecting the n+ drain and p+ emitter regions of the LVTSCR, and controlling the control electrode by means of...
7279367 Method of manufacturing a thyristor semiconductor device  
In a method of processing a semiconductor device, a silicide-blocking layer may be formed over a semiconductor material. After defining the silicide-blocking layer, impurities may be implanted into...
7271040 Electrode contact section of semiconductor device  
A p-type impurity layer is formed in an n-type semiconductor substrate. Since the p-type impurity layer has a low impurity concentration and a sufficiently shallow depth of 1.0 μm or less, the...
7268079 Method for fabricating a semiconductor having a field zone  
A method for fabricating a semiconductor and at least one second semiconductor zone of a semiconductor component having a semiconductor body having a first semiconductor zone. At least one field...
7262100 Semiconductor device and manufacturing method thereof  
A semiconductor device has a MOS gate side surface structure, including a gate electrode filling a trench formed in a semiconductor substrate with an insulator film between the trench and the gate...
7256434 Heterojunction bipolar transistor and method for manufacturing the same, and power amplifier using the same  
A heterojunction bipolar transistor with InGaP as the emitter layer and capable of both reliable electrical conduction and thermal stability wherein a GaAs layer is inserted between the InGaP...
7238553 Method of forming a high-voltage silicon controlled rectifier structure with improved punch through resistance  
When a high-voltage, such as from an ESD pulse, is placed across a silicon controlled rectifier, which includes an NPN transistor and a PNP transistor that is connected to the NPN transistor, the...
7229858 Semiconductor wafer and semiconductor device manufacturing method using the same  
In a method of manufacturing a semiconductor device, a semiconductor wafer is prepared that includes a plurality of IC chips, each having a circuit including a terminal for applying an electrical...
7214985 Integrated circuit incorporating higher voltage devices and low voltage devices therein  
An integrated circuit formed on a semiconductor substrate and configured to accommodate higher voltage devices and low voltage devices therein. In one embodiment, the integrated circuit includes a...
7202114 On-chip structure for electrostatic discharge (ESD) protection  
A complementary SCR-based structure enables a tunable holding voltage for robust and versatile ESD protection. The structure are n-channel high-holding-voltage low-voltage-trigger silicon...
7195959 Thyristor-based semiconductor device and method of fabrication  
A thyristor-based semiconductor memory device may comprise at least a region thereof, e.g., a p-base region, having high ionization energy impurity, such as a dopant. This high ionization energy...
Matches 1 - 50 out of 243 1 2 3 4 5 >