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8440486 |
Electrophoretic display device and method of fabricating the same
A method of fabricating an electrophoretic display device includes forming a gate line along a direction, a gate electrode extending from the gate line, a common line parallel to the gate line, and...
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8438724 |
Method for producing substrate for mounting device and method for producing a semiconductor module
Methods for producing a substrate for mounting a device and for producing a semiconductor module are provided. The methods comprise preparing a metal plate on one major surface of which a plurality...
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8431446 |
Via formation for cross-point memory
Embodiments disclosed herein may relate to electrically conductive vias in cross-point memory array devices. In an embodiment, the vias may be formed using a lithographic operation also utilized to...
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8426257 |
Method for fabricating semiconductor device
A method for fabricating a semiconductor device includes forming a fuse over a substrate, the fuse having a barrier layer, a metal layer, and an anti-reflective layer stacked, selectively removing...
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8426859 |
Semiconductor device and light-emitting device using the same
A semiconductor device includes a semiconductor layer, a first insulating layer, a gate electrode which is formed on the first insulating layer and has a portion overlapping a channel region of the...
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8426304 |
Methods of manufacturing a vertical type semiconductor device
Methods of manufacturing a semiconductor device include forming a stopping layer pattern in a first region of a substrate. A first mold structure is formed in a second region of the substrate that...
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8421187 |
Semiconductor device and manufacturing method thereof
A first insulating film includes five extension lines formed between connection pad portions of adjacent two predetermined wiring lines. The first insulating film also includes peripheral portions...
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8420452 |
Fabrication method of leadframe-based semiconductor package
A leadframe-based semiconductor package and a fabrication method thereof are provided. The leadframe-based semiconductor package includes a chip implanted with a plurality of first and second...
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8409887 |
Organic light emitting diode display device and method of fabricating the same
An organic light emitting diode (OLED) display device and a method of fabricating the same are provided. The OLED display device includes a substrate having a thin film transistor region and a...
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8411477 |
Arrays of vertically stacked tiers of non-volatile cross point memory cells, methods of forming arrays of vertically stacked tiers of non-volatile cross point memory cells, and methods of reading a data value stored by an array of vertically stacked tiers of non-volatile cross point memory cells
An array of vertically stacked tiers of non-volatile cross point memory cells includes a plurality of horizontally oriented word lines within individual tiers of memory cells. A plurality of...
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8405086 |
Pixel structure of display panel and method for manufacturing the same
The present invention provides a pixel structure of a display panel and a method for manufacturing the same. The method comprises the following steps: forming a first transistor and a second...
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8399307 |
Interconnects for stacked non-volatile memory device and method
A method of forming a memory device includes providing a substrate having a surface region, defining a cell region and first and second peripheral regions, sequentially forming a first dielectric...
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8395935 |
Cross-point self-aligned reduced cell size phase change memory
A programmable memory array is disclosed in which the phase change memory cells are self-aligned at the access devices and at the cross-points of the bit lines and the word lines. A method for...
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8389316 |
Strain bars in stressed layers of MOS devices
A semiconductor structure includes an active region; a gate strip overlying the active region; and a metal-oxide-semiconductor (MOS) device. A portion of the gate strip forms a gate of the MOS...
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8389315 |
Method for manufacturing display device
A method for manufacturing a display device is provided. The method includes forming a circuit part; forming a planarization insulating layer on the circuit part; forming a separator in an area...
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8372696 |
Repair method and active device array substrate
A repair method for repairing an active device array substrate is provided. The active device array substrate includes a substrate, scan lines, data lines, active devices, pixel electrodes, and...
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8372742 |
Method, system, and apparatus for adjusting local and global pattern density of an integrated circuit design
An integrated circuit (IC) design method providing a circuit design layout having a plurality of functional blocks disposed a distance away from each other; identifying a local pattern density to...
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8367482 |
Methods for fabricating contacts of semiconductor device structures and methods for designing semiconductor device structures
Methods for fabricating contacts of semiconductor device structures include forming a dielectric layer over a semiconductor substrate with active-device regions spaced at a first pitch, forming a...
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RE43948 |
Formation of contacts on semiconductor substrates
Embodiments of the invention are concerned with a method of manufacturing a radiation detector having one or more conductive contacts on a semiconductor substrate, and comprise the steps of:...
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8361268 |
Method of transferring device
A method of transferring a device includes the steps of: arranging a first substrate, on which a device is provided with a release layer having a planar shape equal to or smaller than the device...
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8358671 |
Photonic clock stabilized laser comb processing
Processing a workpiece with a laser includes generating laser pulses at a first pulse repetition frequency. The first pulse repetition frequency provides reference timing for coordination of a beam...
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8349662 |
Integrated circuit having memory cell array, and method of manufacturing same
An integrated circuit device (e.g., a logic device or a memory device) having (i) a memory cell array which includes a plurality of memory cells (for example, memory cells having electrically...
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8338812 |
Vertical spacer electrodes for variable-resistance material memories and vertical spacer variable-resistance material memory cells
Variable-resistance memory material cells are contacted by vertical bottom spacer electrodes. Variable-resistance material memory spacer cells are contacted along the edge by electrodes. Processes...
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8338225 |
Method to reduce a via area in a phase change memory cell
A memory cell structure and method to form such structure. The method partially comprised of forming a via within an oxidizing layer, over the center of a bottom electrode. The method includes...
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8339849 |
Semiconductor device and layout method for the semiconductor device
Provided is a semiconductor device comprising: a plurality of bit line patterns; a plurality of pad patterns that are respectively connected to the plurality of bit line patterns; and at least one...
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8338237 |
Metal-induced crystallization of amorphous silicon in thin film transistors
The invention provides a method for forming thin film transistors including a polycrystalline semiconducting film. The method comprises depositing a first layer of amorphous semiconducting thin...
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8338746 |
Method for processing a memory link with a set of at least two laser pulses
A set (50) of laser pulses (52) is employed to sever a conductive link (22) in a memory or other IC chip. The duration of the set (50) is preferably shorter than 1,000 ns; and the pulse width of...
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8329512 |
Patterning method for high density pillar structures
A method of making a device includes forming a first photoresist layer over a sacrificial layer, patterning the first photoresist layer to form first photoresist features, rendering the first...
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8330261 |
Method to manufacture a silicon wafer electronic component protected against the attacks and such a component
In general, the invention relates to manufacturing a wafer. The method includes manufacturing a wafer that includes a front side and a back side, thinning the wafer down to a thickness suitable for...
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8324039 |
Reduced silicon thickness of N-channel transistors in SOI CMOS devices
In sophisticated SOI devices, the thickness of the active semiconductor layer in the N-channel transistor may be reduced compared to the P-channel transistor for a given transistor configuration,...
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8325529 |
Bit-line connections for non-volatile storage
Bit line connections for non-volatile storage devices and methods for fabricating the same are disclosed. At least two different types of bit line connections may be used between memory cells and...
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8318566 |
Method to seperate storage regions in the mirror bit device
Devices and methods for isolating adjacent charge accumulation layers in a semiconductor device are disclosed. In one embodiment, a semiconductor device comprises a bit line formed in a...
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8315064 |
Apparatus for detecting pattern alignment error
An apparatus for detecting pattern alignment error includes a first conductive pattern disposed over a first insulation member with a power source applied of the first conductive pattern; a second...
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8309416 |
Semiconductor device with buried bit lines interconnected to one-side-contact and fabrication method thereof
A semiconductor device with reduced resistance of a buried bit line, and a method for fabricating the same. The method for fabricating a semiconductor device includes etching a semiconductor...
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8304297 |
Active matrix substrate, method of making the substrate, and display device
An active matrix substrate includes base substrate, gate lines, data lines, thin-film transistors and pixel electrodes. The gate lines are formed on the base substrate. The data lines are formed...
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8293566 |
Strained layer superlattice focal plane array having a planar structure
An infrared focal plane array (FPA) is disclosed which utilizes a strained-layer superlattice (SLS) formed of alternating layers of InAs and InxGa1-xSb with 0≦x≦0.5 epitaxially grown on a GaSb sub...
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8293575 |
Manufacturing method of semiconductor device
The reliability of a semiconductor device is improved. A sealing resin (sealed body) is formed between a sub-substrate (first base member) and a base substrate (second base member) that are...
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8288212 |
Pixel structure of a thin film transistor liquid crystal display and fabricating method thereof
A method of fabricating a pixel structure of a thin film transistor liquid crystal display is provided. A transparent conductive layer and a first metallic layer are sequentially formed over a...
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8288213 |
Methods of forming memory arrays
Some embodiments include methods of forming memory arrays. A stack of semiconductor material plates may be patterned to subdivide the plates into pieces. Electrically conductive tiers may be formed...
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8278661 |
Thin film transistor, display device including the same, and method for manufacturing the same
A display device and a manufacturing method thereof, include a first thin film transistor including a first control electrode, a first semiconductor disposed on the first control electrode, and a...
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RE43652 |
Substrate processing control method and storage medium
In a substrate processing control method, a first process acquires a first-reflectance-spectrum of a beam reflected from the first-fine-structure and a second-reflectance-spectrum of a beam...
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8258020 |
Interconnects for stacked non-volatile memory device and method
A method of forming a vertical interconnect for a memory device. The method includes providing a substrate having a surface region and defining a cell region, a first peripheral region, and a...
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8252635 |
Electronic system modules and method of fabrication
A trace routing method for a multi-layer interconnection circuit includes the steps of providing stacked contacts with trace stubs at input/output pads of said interconnection circuit, and limiting...
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8252623 |
Phase change memory device with alternating adjacent conduction contacts and fabrication method thereof
A phase change memory device and an associated method of making same are presented. The phase change memory device, includes first wiring lines, second wiring lines, memory cells, and conduction...
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8242807 |
Scalable non-blocking switching network for programmable logic
A scalable non-blocking switching network (SN) having switches and intermediate (stages of) conductors that are used to connect a first plurality of conductors to other multiple sets of conductors...
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8242578 |
Anti-fuse device structure and electroplating circuit structure and method
Disclosed are embodiments of a circuit and method for electroplating a feature (e.g., a BEOL anti-fuse device) onto a wafer. The embodiments eliminate the use of a seed layer and, thereby, minimize...
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8241969 |
Patterning method for high density pillar structures
A method of making a device includes forming a first photoresist layer over a sacrificial layer, patterning the first photoresist layer to form first photoresist features, rendering the first...
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8237213 |
Memory arrays having substantially vertical, adjacent semiconductor structures and the formation thereof
Memory arrays and methods of their formation are disclosed. One such memory array has memory-cell strings are formed adjacent to separated substantially vertical, adjacent semiconductor structures,...
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8222091 |
Damascene method of making a nonvolatile memory device
A method of making a device includes providing a first device level containing first semiconductor rails separated by first insulating features, forming a sacrificial layer over the first device...
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8203173 |
Semiconductor integrated circuit
A semiconductor integrated circuit has: a substrate; a basic logic cell placed on the substrate and configured to function as a part of a logic circuit; and a dummy cell placed on the substrate and...
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