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7629199 Method for fabricating semiconductor package with build-up layers formed on chip  
A semiconductor package with build-up layers formed on a chip and a fabrication method of the semiconductor package are provided. A chip with a plurality of conductive bumps formed on bond pads...
7619257 Devices including graphene layers epitaxially grown on single crystal substrates  
An electronic device comprises a body including a single crystal region on a major surface of the body. The single crystal region has a hexagonal crystal lattice that is substantially...
7601986 Epitaxial semiconductor structures having reduced stacking fault nucleation sites  
Epitaxial silicon carbide layers are fabricated by forming features in a surface of a silicon carbide substrate having an off-axis orientation toward a crystallographic direction. The features...
7598107 Semi-sacrificial mold for diamond structures  
A patterned structure forms a portion of the mold for a diamond molded structure but is separable from the mold by the same processes that release the diamond part. The mold portion may itself be a...
7588961 Semiconductor device and manufacturing method thereof  
In general, this disclosure describes a semiconductor device that exhibits an increased resistance and reduced leakage current in a reverse-biased state, and a method for manufacturing such a...
7556982 Method to grow pure nanocrystalline diamond films at low temperatures and high deposition rates  
A method of depositing nanocrystalline diamond film on a substrate at a rate of not less than about 0.2 microns/hour at a substrate temperature less than about 500° C. The method includes seeding...
7553693 Method for making a field effect transistor with diamond-like carbon channel and resulting transistor  
The field effect transistor comprises a source and a drain connected by a channel controlled by a gate electrode separated from the channel by a gate insulator. The channel is formed by a...
7538353 Composite barrier/etch stop layer comprising oxygen doped SiC and SiC for interconnect structures  
A dual damascene structure comprising a composite barrier/etch stop layer including a lower silicon carbide (SiC) layer and an upper first oxygen doped SiC layer formed over a substrate is...
7536780 Method of manufacturing wiring substrate to which semiconductor chip is mounted  
The present invention discloses a method of manufacturing a wiring substrate to which a semiconductor chip mounted. The method includes the steps of forming a base, forming a peeling layer on the...
7521731 Semiconductor device and method of manufacturing the same  
A semiconductor device of the invention includes a first conductive type semiconductor base substrate; and a switching mechanism which is formed on a first main surface of the semiconductor base...
7498191 Semiconductor-on-diamond devices and associated methods  
Semiconductor-on-diamond (SOD) substrates and methods for making such substrates are provided. In one aspect, a method of making an SOD substrate may include depositing a base layer onto a...
7470563 Microelectronic device packages and methods for controlling the disposition of non-conductive materials in such packages  
A microelectronic package and method for forming such a package. In one embodiment, the package can include a microelectronic substrate having first connection sites, and a support member having...
7466019 Rectangular semi-conducting support for microelectronics and method for making same  
The semi-conducting support comprises a graphite substrate having a front surface and a rear surface and at least a first stack arranged on the front surface of the substrate. The first stack...
7449361 Semiconductor substrate with islands of diamond and resulting devices  
Disclosed is a method of forming a substrate having islands of diamond (or other material, such as diamond-like carbon), as well as integrated circuit devices formed from such a substrate. A...
7442575 Method of manufacturing semiconductor nanowires  
A method is shown for manufacturing silicon semiconductor nanowires on graphite cloth conducting substrates. The nanowires are grown on the substrate by first depositing a thin gold film on the...
7439081 Method for making integrated circuit chip utilizing oriented carbon nanotube conductive layers  
A conductive layer in an integrated circuit is formed as a sandwich having multiple sublayers, including at least one sublayer of oriented carbon nanotubes. The conductive layer sandwich preferably...
7417227 Scanning interference electron microscope  
The conventional detection technique has the following problems in detecting interference fringes: (1) Setting and adjustment are complex and difficult to conduct; (2) A phase image and an...
7396410 Featuring forming methods to reduce stacking fault nucleation sites  
Epitaxial silicon carbide layers are fabricated by forming features in a surface of a silicon carbide substrate having an off-axis orientation toward a crystallographic direction. The features...
7394103 All diamond self-aligned thin film transistor  
A substantially all diamond transistor with an electrically insulating substrate, an electrically conductive diamond layer on the substrate, and a source and a drain contact on the electrically...
7393717 Diamond-based electrical resistor component  
The invention relates to an electrical component having a resistance area and contacts electrically connected to the resistance area, the resistance area including electrically conductive diamond....
7390695 Diamond substrate and manufacturing method thereof  
A manufacturing method for a large-scale diamond substrate and the produced substrate that is suitable for semiconductor lithography processing and large-scale optical parts, semiconductor...
7381992 Silicon carbide power devices with self-aligned source and well regions  
Silicon carbide semiconductor devices and methods of fabricating silicon carbide semiconductor devices are provided by successively etching a mask layer to provide windows for formation of a source...
7375377 Ingan-based light-emitting diode chip and a method for the production thereof  
A light-emitting diode chip ( 1 ), in which over a substrate ( 2 ), a series of epitaxial layers ( 3 ) with a radiation-emitting active structure ( 4 ) based on InGaN is disposed. Between the...
7368317 Method of producing an N-type diamond with high electrical conductivity  
The invention relates to a method of producing an n-type diamond. The inventive method comprises an n-doping stage during which a donor species is vacuum diffused in a diamond that was initially...
7301223 High temperature electronic devices  
In at least some embodiments, electronic devices suitable for use at temperatures in excess of 200 C. may comprise an integrated circuit fabricated on a silicon carbide substrate, and a thick...
7268011 Diamond composite heat spreader and associated methods  
Diamond heat spreaders are produced having thermal properties approaching that of pure diamond. Diamond particles of relatively large grain size are tightly packed to maximize diamond-to-diamond...
7247513 Dissociation of silicon clusters in a gas phase during chemical vapor deposition homo-epitaxial growth of silicon carbide  
A method of forming a layer of silicon carbide wherein silicon clusters are dissociated in a gas phase. Silicon clusters may be dissociated by a silicon-etching gas such as a group VII-containing...
7241698 Method for sensor edge and mask height control for narrow track width devices  
A process for defining and controlling the mask height of sensor devices is disclosed. An RIE-resistant, image layer, such as Cu or NiFe, is deposited after the DLC layer. A combination of RIE and...
7241697 Method for sensor edge control and track width definition for narrow track width devices  
A process for defining and controlling the track width for sensor devices is disclosed. An RIE-resistant, image layer, such as Cu or NiFe, is deposited after the DLC layer. A combination of RIE and...
7226805 Sequential lithographic methods to reduce stacking fault nucleation sites  
An epitaxial silicon carbide layer is fabricated by forming first features in a surface of a silicon carbide substrate having an off-axis orientation toward a crystallographic direction. The first...
7173285 Lithographic methods to reduce stacking fault nucleation sites  
Epitaxial silicon carbide layers are fabricated by forming features in a surface of a silicon carbide substrate having an off-axis orientation toward a crystallographic direction. The features...
7166866 Edge termination for silicon power devices  
A silicon semiconductor die comprises a heavily doped silicon substrate and an upper layer comprising doped silicon of a first conduction type disposed on the substrate. The upper layer comprises a...
7148079 Diamond like carbon silicon on insulator substrates and methods of fabrication thereof  
Diamond like carbon silicon on insulator substrates and methods of fabrication thereof are disclosed. In one form, a process for creating a composite structure for fabricating an electronic device...
7144753 Boron-doped nanocrystalline diamond  
A conductive boron doped nanocrystalline diamond is described. The boron doped diamond has a conductivity which uses the boron in the crystals as a charge carrier. The diamond is particularly...
7141807 Nanowire capillaries for mass spectrometry  
A capillary for a mass spectrometry system is described. The capillary comprises a channel and a tip, and at least one of the channel and the tip comprises a nanowire material.
7138292 Apparatus and method of manufacture for integrated circuit and CMOS device including epitaxially grown dielectric on silicon carbide  
An integrated circuit, or portion thereof, such as a CMOS device, includes an epitaxially grown dielectric on a silicon carbide base. The epitaxially grown dielectric forms a gate dielectric and...
7138291 Methods of treating a silicon carbide substrate for improved epitaxial deposition and resulting structures and devices  
A method is disclosed for treating a silicon carbide substrate for improved epitaxial deposition thereon and for use as a precursor in the manufacture of devices such as light emitting diodes. The...
7132313 Diamond heat spreading and cooling technique for integrated circuits  
A semiconductor chip is shown containing an integral heat spreading layer that more effectively transmits heat from the die to ambient as a result of spreading the heat out on the die over a larger...
7132309 Semiconductor-on-diamond devices and methods of forming  
The present invention provides semiconductor-on-diamond devices, and methods for the formation thereof. In one aspect, a mold is provided which has an interface surface configured to inversely...
7122837 Structures formed in diamond  
N-V centers in diamond are created in a controlled manner. In one embodiment, a single crystal diamond is formed using a CVD process, and then annealed to remove N-V centers. A thin layer of single...
7118970 Methods of fabricating silicon carbide devices with hybrid well regions  
MOS channel devices and methods of fabricating such devices having a hybrid channel are provided. Exemplary devices include vertical power MOSFETs that include a hybrid well region of silicon...
7105875 Lateral power diodes  
A lateral power diodes with an optimal drift doping formed in widebandgap semiconductors like Silicon Carbide, Aluminum Nitride and Gallium Nitride and Diamond are provided with a voltage rating...
7105118 Methods of forming three-dimensional nanodot arrays in a matrix  
Nanostructures and methods of making nanostructures having self-assembled nanodot arrays wherein nanodots are self-assembled in a matrix material due to the free energies of the nanodot material...
7102145 System and method for improving spatial resolution of electron holography  
A method for enhancing spatial resolution of a transmission electron microscopy TEM) system configured for electron holography. In an exemplary embodiment, the method includes configuring a first...
7064352 Diamond semiconductor device and method for manufacturing the same  
A diamond semiconductor device includes a substrate made of single crystal diamond; a first diamond layer, placed on the substrate, containing an impurity; a second diamond layer containing the...
7056763 Composite structure for electronic microsystems and method for production of said composite structure  
The invention relates to a composite structure for electronic microsystems and a method for producing this composite structure, with the composite structure being provided with a polycrystalline...
7052937 Method and structure for providing improved thermal conduction for silicon semiconductor devices  
Thermal cooling structures of diamond or diamond-like materials are provided for conducting heat away from semiconductor devices. A first silicon-on-insulator embodiment comprises a plurality of...
7052932 Oxygen doped SiC for Cu barrier and etch stop layer in dual damascene fabrication  
A method of forming a dual damascene structure with improved performance is described. A first etch stop layer comprised of oxygen doped SiC is deposited on a SiC barrier layer to form a composite...
7049209 De-fluorination of wafer surface and related structure  
Methods of de-fluorinating a wafer surface after damascene processing and prior to photoresist removal are disclosed, as is a related structure. In one embodiment, the method places the wafer...
7045384 Method for determining metal work function by formation of Schottky diodes with shadow mask  
A method of determining a work function of a metal to be used as a metal gate material provides a metal-on-silicon (MS) Schottky diode on a silicon substrate. The MS Schottky diode is formed by...
Matches 1 - 50 out of 176 1 2 3 4 >