Matches 1 - 45 out of 45


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8169753 Current-perpendicular-to-plane (CPP) read sensor with ferromagnetic amorphous buffer and polycrystalline seed layers  
A current-perpendicular-to-plane (CPP) tunneling magnetoresistance (TMR) or giant magnetoresistance (GMR) read sensor with ferromagnetic amorphous buffer and polycrystalline seed layers is...
8124253 Tunneling magnetic sensing element including MGO film as insulating barrier layer  
A tunneling magnetic sensing element includes a laminate in which an underlayer, a seed layer, an antiferromagnetic layer, a pinned magnetic layer, an insulating barrier layer, and a free magnetic...
8064244 Thin seeded Co/Ni multilayer film with perpendicular anisotropy for spintronic device applications  
A spin valve structure for a spintronic device is disclosed and includes a composite seed layer made of at least Ta and a metal layer having a fcc(111) or hcp(001) texture to enhance perpendicular...
8057925 Low switching current dual spin filter (DSF) element for STT-RAM and a method for making the same  
A dual spin filter that minimizes spin-transfer magnetization switching current (Jc) while achieving a high dR/R in STT-RAM devices is disclosed. The bottom spin valve has a MgO tunnel barrier...
8043732 Memory cell with radial barrier  
Magnetic tunnel junction cells and methods of making magnetic tunnel junction cells that include a radially protective layer extending proximate at least the ferromagnetic free layer of the cell....
8036024 Magnetic storage element storing data by magnetoresistive effect  
In a ferromagnetic tunnel junction element, a recording layer is in a circular shape, which can suppress an increase in magnetization switching field due to miniaturization of the element. Further,...
7993762 Magnetic thin film and method of manufacturing the same, and various application devices using the same  
The present invention relates to a magnetic thin film containing a L11 type Co—Pt—C alloy in which atoms are orderly arranged, and can realize an order degree excellent in regard to the L11 typ...
7939188 Magnetic stack design  
A magnetic stack having a free layer having a switchable magnetization orientation, a reference layer having a pinned magnetization orientation, and a barrier layer therebetween. The stack includes...
7935435 Magnetic memory cell construction  
A magnetic tunnel junction cell having a free layer, a ferromagnetic pinned layer, and a barrier layer therebetween. The free layer has a central ferromagnetic portion and a stabilizing portion...
7914915 Highly charged ion modified oxide device and method of making same  
A highly charged ion modified device is provided that includes a first metal layer or layers deposited on a substrate and an insulator layer, deposited on the first metal layer, including a...
7855861 Insulator barrier for noise reduction of a TMR magnetic transducer  
A hard disk drive slider comprises an overcoat layer, which covers an air-bearing surface of the slider. The overcoat covers an exposed surface of a tunneling magnetoresistance transducer. An...
7807218 High performance magnetic tunnel barriers with amorphous materials  
A magnetic tunneling element is constructed from a MgO or Mg—ZnO tunnel barrier and an amorphous magnetic layer in proximity with the tunnel barrier. The amorphous magnetic layer includes Co and a...
7791845 Tunneling magnetoresistive sensor having a high iron concentration free layer and an oxides of magnesium barrier layer  
An improved formulation for free layers in MTJ sensors is disclosed. Optimized results of the prior art suggest free layer iron concentrations less than 20 atomic % give the best performance. The...
7715156 Tunnel magnetoresistive effect element and thin-film magnetic head with tunnel magnetoresistive effect read head element  
A TMR element includes a lower electrode layer, a TMR multi-layer stacked on the lower electrode layer, and an upper electrode layer stacked on the TMR multi-layer. The TMR multi-layer includes a...
7678475 Spin-torque devices  
Spin-torque devices are based on a combination of giant magnetoresistance (GMR) and tunneling magnetoresistance (TMR) effects. The basic structure has various applications, including amplifiers,...
7547480 Magnetic tunnel junction pressure sensors and methods  
An integrated circuit device is provided which comprises a substrate, a conductive line configured to experience a pressure, and a magnetic tunnel junction (“MTJ”) core formed between the sub...
7514160 Tunnel magnetoresistance element having a double underlayer of amorphous MgO and crystalline MgO(001)  
By varying only the thickness of a known material having superior magnetic characteristics to increase spin polarization without changing the chemical composition, a tunnel magnetoresistive element...
7510883 Magnetic tunnel junction temperature sensors and methods  
Techniques of sensing a temperature of a heat source disposed in a substrate of an integrated circuit are provided. According to one exemplary method, a Magnetic Tunnel Junction (“MTJ”) tem...
7494724 Magnetoresistance effect element, its manufacturing method, magnetic reproducing element and magnetic memory  
A method of manufacturing a magnetoresistance effect element includes forming an insulating layer on a first ferromagnetic layer, forming an aperture reaching the first ferromagnetic layer by...
7369373 CPP GMR with hard magnet in stack bias layer  
A current perpendicular to plane magnetorestive sensor having an improved in stack biasing. An amorphous layer breaks the structure allowing a desire crystolographic structure in an in stack bias...
7357995 Magnetic tunnel barriers and associated magnetic tunnel junctions with high tunneling magnetoresistance  
Magnetic tunneling devices are formed from a first body centered cubic (bcc) magnetic layer and a second bcc magnetic layer. At least one spacer layer of bcc material between these magnetic layers...
7355824 Magnetoresistive effect element and magnetic memory having the same  
The present invention relates to a magnetoresistive effect element, which has a large MR ratio, excellent thermostability and a small switching magnetic field even if its size is decreased, and a...
7351483 Magnetic tunnel junctions using amorphous materials as reference and free layers  
Magnetic tunnel junctions are constructed from a MgO or Mg—ZnO tunnel barrier and amorphous magnetic layers in proximity with, and on respective sides of, the tunnel barrier. The amorphous m...
7300711 Magnetic tunnel junctions with high tunneling magnetoresistance using non-bcc magnetic materials  
Magnetic material, which is not normally bcc-structured under ambient conditions, is induced into becoming bcc as a result of its proximity to a suitable templating material, such as a...
7284315 Method of forming a magnetic tunnel junction  
A method of forming a magnetic tunnel junction memory element and the resulting structure are disclosed. A magnetic tunnel junction memory element comprising a thick nonmagnetic layer between two...
7270896 High performance magnetic tunnel barriers with amorphous materials  
A magnetic tunneling element is constructed from a MgO or Mg—ZnO tunnel barrier and an amorphous magnetic layer in proximity with the tunnel baffler. The amorphous magnetic layer includes Co and a...
7264844 Forming oxide buffer layer for improved magnetic tunnel junctions  
A metal manganese oxide buffer layer is used to seed a barrier layer in a magnetic tunnel junction memory element having pinned and free magnetic layers. An alumina tunnel barrier layer is formed...
7252852 Mg-Zn oxide tunnel barriers and method of formation  
ZnMg oxide tunnel barriers are grown which, when sandwiched between ferri- or ferromagnetic layers, form magnetic tunnel junctions exhibiting high tunneling magnetoresistance (TMR). The TMR may be...
7241514 Magneto-resistive device, and magnetic head, head suspension assembly and magnetic disk apparatus using magneto-resistive device  
A magneto-resistive device is provided for contributing to a higher MR ratio and a reduced cleaning time for cleaning the surface of a cap layer. In the magneto-resistive device, a cap layer which...
7220482 Aligned fine particles, method for producing the same and device using the same  
The present invention provides aligned fine particles that are aligned on a substrate. An organic coating film is bonded to surfaces of the fine particles is formed on the surfaces of the fine...
7220498 Tunnel magnetoresistance element  
By varying only the thickness of a known material having superior magnetic characteristics to increase spin polarization without changing the chemical composition, a tunnel magnetoresistive element...
7204013 Method of manufacturing a magnetoresistive sensor  
In a method of forming a magnetoresistive sensor, first and second magnetic leads are formed. Next, a junction of magnetic and electrically conductive material is formed between the first and...
7001680 Low resistance magnetic tunnel junction structure  
The present disclosure describes magnetic tunnel junction (MTJ) devices and systems involving the use of diffusion components selected to alter the device properties. The diffusion components...
6870714 Oxide buffer layer for improved magnetic tunnel junctions  
A metal manganese oxide buffer layer is used to seed a barrier layer in a magnetic tunnel junction memory element having pinned and free magnetic layers. An alumina tunnel barrier layer is formed...
6756128 Low-resistance high-magnetoresistance magnetic tunnel junction device with improved tunnel barrier  
A low resistance magnetic tunnel junction device, such as a memory cell in a nonvolatile magnetic random access memory (MRAM) array or a magnetoresistive read head in a magnetic recording disk...
6730395 Magnetic tunnel junction using nanoparticle monolayers and applications therefor  
A fundamentally new magnetic tunnel junction technology based on the use of magnetic nanoparticles is disclosed. The hard layer of the device is composed of the nanoparticles, while the junction...
6710986 Tunneling magnetoresistive head and a process of tunneling magnetoresistive head  
There is proposed a high-sensitive TMR element wherein the selection of electronic state contributing to tunnel conduction is optimized. In this invention, a junction plane between a ferromagnetic...
6525532 Magnetic device  
A magnetic sensor is constructed to be capable of detecting the change of tunnel current due to co-tunneling effect at a high S/N ratio by using a tunneling magneto-resistive element having a first...
6365286 Magnetic element, magnetic memory device, magnetoresistance effect head, and magnetic storage system  
A magnetic element which has a laminate film composed of ferromagnetic-dielectric mixed layer and dielectric layer laminated alternately, said ferromagnetic-dielectric mixed layer being a mixture...
6361859 Magnetic recording media having CrMo underlayers  
A magnetic recording media having a CrMo underlayer provides improved performance characteristics. In one embodiment, the recording media comprises a rigid substrate and an underlayer disposed over...
6359289 Magnetic tunnel junction device with improved insulating tunnel barrier  
A magnetic tunnel junction device has a tunnel barrier made of a material consisting essentially of an oxide or nitride of one or more of gallium and indium. An oxide or nitride of aluminum may be...
6339330 Magnetic head  
A magnetic sensor is constructed to be capable of detecting the change of tunnel current due to co-tunneling effect at a high S/N ratio by using a tunneling magneto-resistive element having a first...
6333111 Method of producing layered aluminum fine particles and use thereof  
The present invention provides a method for producing layered aluminum fine particles, and applications to single electron tunneling quantum devices, and the present invention further relates to a...
6312840 Magnetic tunneling element and manufacturing method therefor  
A magnetic tunnelling element in which the tunnel current flows reliably in an insulating layer to exhibit a stable magnetic tunnelling effect. To this end, the magnetic tunnelling element at least...
6114056 Magnetic element, and magnetic head and magnetic memory device using thereof  
A magnetic element comprises a granular magnetic film which has ferromagnetic fine particles dispersed in a dielectric matrix and does not display superparamagnetism and further possesses a finite...
Matches 1 - 45 out of 45