Matches 1 - 50 out of 188 1 2 3 4 >


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9012045 Transparent composite pane for safety applications  
Transparent composite pane for safety applications. The composite pane is composed of multiple layers which are arranged behind one another. At least one of the layers is composed of, a plate or...
8878322 Perovskite manganese oxide thin film and manufacturing method therefor  
A perovskite manganese oxide thin film formed on a substrate that allows a first order phase transition and has A-site ordering. The thin film contains Ba and a rare earth element in the A sites...
8871364 Perovskite manganese oxide thin film  
An article including a perovskite manganese oxide thin film is composed of a substrate; and a perovskite manganese oxide thin film formed on the substrate and having an orientation that is an...
8822045 Passivation of aluminum nitride substrates  
The present invention provides methods of protecting a surface of an aluminum nitride substrate. The substrate with the protected surface can be stored for a period of time and easily activated to...
8795430 Method of improving surface morphology of (Ga,Al,In,B)N thin films and devices grown on nonpolar or semipolar (Ga,Al,In,B)N substrates  
A method for improving the growth morphology of (Ga,Al,In,B)N thin films on nonpolar or semipolar (Ga,Al,In,B)N substrates, wherein a (Ga,Al,In,B)N thin film is grown directly on a nonpolar or...
8778513 Perovskite manganese oxide thin film  
An article including a perovskite manganese (Mn) oxide thin film, includes a substrate having an oriented perovskite structure that is (m10) oriented, where 19≧m≧2, and having an [100] axis...
8685490 Undercoating layers providing improved photoactive topcoat functionality  
A coated article includes a substrate and a first coating formed over at least a portion of the substrate. The first coating includes a mixture of oxides including oxides of at least two of P, Si,...
8524382 Oxide substrate and manufacturing method therefor  
Some aspects of the invention provide an oxide substrate having a flat surface at the atomic layer level, and suited to forming a thin film of a perovskite manganese oxide. One aspect of the...
8252416 Nanocrystal-metal oxide complex comprising at least two different surfactants and method for preparing the same  
Disclosed herein is a nanocrystal-metal oxide complex. The nanocrystal of the nanocrystal-metal oxide complex is substituted with two or more different types of surfactants which are miscible with...
8227082 Faceted ceramic fibers, tapes or ribbons and epitaxial devices therefrom  
A crystalline article includes a single-crystal ceramic fiber, tape or ribbon. The fiber, tape or ribbon has at least one crystallographic facet along its length, which is generally at least one...
8043687 Structure including a graphene layer and method for forming the same  
A method for forming a graphene layer is disclosed herein. The method includes establishing an insulating layer on a substrate such that at least one seed region, which exposes a surface of the...
8012592 Monolithically integrated semiconductor materials and devices  
Methods and structures for monolithically integrating monocrystalline silicon and monocrystalline non-silicon materials and devices are provided. In one structure, a semiconductor structure...
8012601 Cold gas spraying method  
In a cold gas spraying method, a gas jet (15) into which particles (19) are introduced is generated with the aid of a cold gas spray gun (20). The kinetic energy of the particles (19) results in a...
RE41747 Metal film and metal film-coated member, metal oxide film and metal oxide film-coated member, thin film forming apparatus and thin film forming method for producing metal film and metal oxide film  
The metal film of the present invention is a dense film of a single crystal that has very low surface roughness and very good crystal orientation because an arithmetic mean roughness of the...
7713640 Epitaxial layer structures, precursors for topotactic anion exchange films  
This invention disclosure describes methods for the fabrication of metal oxide films on surfaces by topotactic anion exchange, and laminate structures enabled by the method. A precursor...
7682709 Germanium doped n-type aluminum nitride epitaxial layers  
A method of preparing an n-type epitaxial layer of aluminum nitride conductively doped with germanium comprises directing a molecular beam of aluminum atoms onto the growth surface of a substrate...
7655327 Composition comprising rare-earth dielectric  
Compositions comprising a single-phase rare-earth dielectric disposed on a substrate. Embodiments of the present invention provide the basis for high-K gate dielectrics in conventional integrated...
7531240 Substrate with locally integrated single crystalline silicon layer and method of fabricating the same  
A method of fabricating a large substrate with a locally integrated single crystalline silicon layer is provided. The method includes: forming a buffer layer on a support plate; separately...
7527877 Platinum group bond coat modified for diffusion control  
A modified platinum group metal coating composition comprising a phase having a solid solution face-centered cubic (fcc) crystal structure, rich in platinum group materials. In order to be...
7445810 Method of making a tantalum layer and apparatus using a tantalum layer  
A method of making tantalum structures, including, creating a tantalum layer disposed on a first layer region of a first layer and on a second layer region of a second layer. The tantalum layer...
7083869 Methods of forming LaNiO3 conductive layers, ferro-electric devices with LaNiO3 layers, and precursor formation solutions  
Methods of forming lanthanum nickel oxide (LaNiO3) layers with precursor formation solutions are disclosed, along with devices made from such solutions. Also disclosed are methods for making the...
7033679 Metal film and metal film-coated member, metal oxide film and metal oxide film-coated member, thin film forming apparatus and thin film forming method for producing metal film and metal oxide film  
The metal film of the present invention is a dense film of a single crystal that has very low surface roughness and very good crystal orientation because an arithmetic mean roughness of the...
7011898 Method of joining ITM materials using a partially or fully-transient liquid phase  
A method of forming a composite structure includes: (1) providing first and second sintered bodies containing first and second multicomponent metallic oxides having first and second identical...
6872251 Method for manufacturing single crystal ceramic powder, and single crystal ceramic powder, composite material, and electronic element  
A method for manufacturing single crystal ceramic powder is provided. The method includes a powder supply step for supplying powder consisting essentially of ceramic ingredients to a heat...
6872479 Coated optics to improve durability  
The invention is directed to a coated metal fluoride crystals that are resistant to laser-induced damage by a below 250 nm UV laser beam; methods of making such coated crystals, and the use of...
6844084 Spinel substrate and heteroepitaxial growth of III-V materials thereon  
A spinel composition of the invention includes a monocrystalline lattice having a formula Mg1-wαwAlx-yβyOz, where w is greater than 0 and less than 1, x is greater than 2 and less than about 8, y...
6824897 Method for producing bonded articles, bonded articles and bonding agents  
A method for producing a bonded article composed of a first substrate, a second substrate, and a bonding layer through which the first and second substrates are bonded to one another includes the...
6746777 Alternative substrates for epitaxial growth  
A substrate including a base substrate, an interfacial bonding layer disposed on the base substrate, and a thin film adaptive crystalline layer disposed on the interfacial bonding layer. The...
6716544 Coated sinter of cubic-system boron nitride  
A coated cubic boron nitride (cBN) sintered body most suitable for a cutting tool having excellent resistance to wear and heat in the high-speed cutting of steel has been developed. The sintered...
6667672 Compact high power analog electrically controlled phase shifter  
A high power ferrite microwave phase shifter that is both compact and low cost. The ferrite phase shifter includes a waveguide having a first cylinder and a second cylinder, the radius of the...
6641938 Silicon carbide epitaxial layers grown on substrates offcut towards <1100>  
A silicon carbide epitaxial film, grown on an offcut surface of a SiC crystalline substrate of hexagonal crystal form, having an offcut angle of from about 6 to about 10 degrees, toward the...
6613463 Superconducting laminated oxide substrate and superconducting integrated circuit  
A superconducting laminated oxide substrate, which comprises a laminate a layer of a superconducting oxide crystal substrate made of a superconducting oxide single crystal or a superconducting...
6558822 Cr-containing titanium nitride film  
The invention aims to provide a hard film which is improved in high-temperature corrosion resistance without impairing high sliding characteristics (wear resistance, low frictional coefficient)...
6534207 Process for producing amorphous material containing single crystal or polycrystal and material produced  
Pulsed light is irradiated to an amorphous base material, to produce therein one or more single crystals or polycrystals having nonlinear characteristic advantageous for light communication and...
6479173 Semiconductor structure having a crystalline alkaline earth metal silicon nitride/oxide interface with silicon  
A semiconductor structure comprises a silicon substrate (10), one or more layers of single crystal oxides or nitrides (26), and an interface (14) between the silicon substrate and the one or more...
6465825 Thin film multilayered structure, ferroelectric thin film element, and manufacturing method of the same  
A thin film multilayered structure comprises a single crystal Si substrate; a MgO buffer layer epitaxially grown on said single crystal Si substrate; and a metallic thin film made of Ir or Rh...
6426156 Magnetostatic wave device  
A magnetic garnet single crystal film used for a magnetostatic wave device has a Pb content in the range of from more than zero to about 4,000 ppm by weight.
6406795 Compliant universal substrates for optoelectronic and electronic devices  
A compliant substrate for the formation of semiconductor devices includes a crystalline base layer and a thin-film crystalline layer on and loosely bonded to the base layers. The thin-film layer...
6368733 ELO semiconductor substrate  
A semiconductor substrate comprising a single crystal substrate having thereon a mask and a Group III-V compound semiconductor epitaxially grown layer, said mask comprising an insulating material...
6344265 Coated cutting insert  
The present invention relates to a coated body such as a cutting tool insert comprising a wear resistant coating and a cemented carbide body particularly useful for the machining of cast iron...
6299991 Selective growth of ferromagnetic films for magnetic memory, storage-based devices  
A device and a method of forming the device, includes selective area deposition of a ferromagnetic material on a substrate. The substrate surface is partially covered with material having a...
6265089 Electronic devices grown on off-axis sapphire substrate  
An electronic device characterized by a 10-300 micron thick sapphire crystal substrate having a polished off a-plane growth surface, a 10-1000 angstrom thick nucleating layer disposed on the...
6258459 Multilayer thin film  
The first object of the invention is to provide means that enables a perovskite oxide thin film having (100) orientation, (001) orientation or (111) orientation to be easily obtained, and the...
6251533 Ceramic laminate material  
Ceramic laminate material comprising at least one dense layer of a perovskite material and at least one layer of a dense non-perovskite material and/or at least one layer of a dense...
6248459 Semiconductor structure having a crystalline alkaline earth metal oxide interface with silicon  
A semiconductor structure comprises a silicon substrate (10), one or more layers of single crystal oxides (26), and an interface (14) between the silicon substrate and the one or more layers of...
6242080 Zinc oxide thin film and process for producing the film  
Provided are a zinc oxide thin film having an X-ray diffraction peak of the (103) plane of zinc oxide crystal, a photoelectric conversion element having the zinc oxide thin film, and production...
6235402 Buffer layers on biaxially textured metal substrates  
A method is disclosed for forming a biaxially textured buffer layer on a biaxially oriented metal substrate by using a sol-gel coating technique followed by pyrolyzing/annealing in a reducing...
6232167 Method of producing a ferroelectric thin film coated substrate  
A ferroelectric thin film coated substrate is obtained by a producing method of forming a crystalline thin film on a substrate by means of a MOCVD method at a substrate temperature at which...
6200680 Fine zinc oxide particles, process for producing the same, and use thereof  
A process for producing zinc oxide fine particles comprising heating a mixture comprising a zinc source, a carboxyl-containing compound, and an alcohol; a process for producing zinc oxide-polymer...
6146765 Transparent conductive film and method for its production, and sputtering target  
A transparent conductive film of a zinc oxide type containing gallium and silicon, which contains silicon in an amount of from 0.01 to 1.5 mol % in terms of SiO2.

Matches 1 - 50 out of 188 1 2 3 4 >