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7601393 |
Controlling the temperature of a substrate in a film deposition apparatus
A system and method for that allows one part of an atomic layer deposition (ALD) process sequence to occur at a first temperature while allowing another part of the ALD process sequence to occur at...
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7449220 |
Method for manufacturing a plate-shaped workpiece
A method for producing a disk shaped workpiece with a dielectric substrate includes treatment in a plasma process volume between two electrode faces bounding a high-frequency plasma discharge. One...
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7442413 |
Methods and apparatus for treating a work piece with a vaporous element
Methods and apparatus for controlling and delivering a vaporous element or compound, for example, selenium or sulfur, from a solid source to a work piece are provided. The methods and apparatus may...
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7374642 |
Treatment process for improving the mechanical, catalytic, chemical, and biological activity of surfaces and articles treated therewith
A continuous, uninterrupted two-step treatment process capable of forming nanometer scale physical structures on the surface of articles fabricated from metallic, ceramic, glass, or plastic...
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7279078 |
Thin-film coating for wheel rims
A process for coating a non-uniform, thin-film, dichroic pattern to a wheel rim or motorcycle part. The thin-film coating adds a colored or iridescent pattern to the wheel rim or motorcycle part,...
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7156960 |
Method and device for continuous cold plasma deposition of metal coatings
A method for the deposition of a metal layer on a substrate ( 1 ) uses a cold plasma inside an enclosure ( 7 ) heated to avoid the formation of a metal deposit at its surface. The enclosure has an...
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7112690 |
Volatile noble metal organometallic complexes
A series of noble metal organometallic complexes of the general formula (I): ML a X b (FBC) c , wherein M is a noble metal such as iridium, ruthenium or osmium, and L is a neutral ligand such as...
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7084288 |
Organometallic precursor for forming metal film or pattern and method of forming metal film or pattern using the same
The object of this invention is to provide an organometallic precursor for forming a metal film or pattern and a method of forming the metal film or pattern using the same. More particularly, the...
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7064224 |
Organometallic complexes and their use as precursors to deposit metal films
This invention is related to organometallic precursors and deposition processes for fabricating conformal metal containing films on substrates such as silicon, metal nitrides and other metal...
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7033650 |
Method of producing a nanotube layer on a substrate
In a method of producing a nanotube layer on a substrate by using a CVD process, the substrate is placed in a reaction chamber, which is flushed with a carbon-containing gas. Subsequently, the...
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7002032 |
Organic compound for CVD raw material and method of manufacturing metallic or metallic compound thin film using the organic compound
The present invention provides an organic compound for CVD raw material prepared by mixing a first organometallic compound and at least one second organometallic compound, said first organometallic...
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6998497 |
Metal bis-triflimide compounds and methods for synthesis of metal bis-triflimide compounds
A metal bis-triflimide compound having the formula: [M x ] n+ [(N(SO 2 CF 3 ) 2 ) (nx−yz) ] (nx−yz)− [L y ] z− where M is a metal selected from the metals in groups 5 to 10, 12 and 14 to...
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6992202 |
Single-source precursors for ternary chalcopyrite materials, and methods of making and using the same
A single source precursor for depositing ternary I-III-VI 2 chalcopyrite materials useful as semiconductors. The single source precursor has the I-III-VI 2 stoichiometry “built into” a single...
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6992200 |
Copper complexes and process for formation of copper-containing thin films by using the same
Copper-containing thin films can be industrially advantageously formed by chemical vapor deposition using as the copper source a divalent copper complex bearing β-diketonato ligands having silyl...
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6956127 |
Alkyl group VA metal compounds
Disclosed are methods of preparing monoalkyl Group VA metal dihalide compounds in high yield and high purity by the reaction of a Group VA metal trihalide with an organo lithium reagent or a...
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6919468 |
Asymmetric group 8 (VIII) metallocene compounds
Asymmetric, disubstituted metallocene compounds have the general formula CpMCp′ where M is a metal selected from the group consisting of Ru, Os and Fe; Cp is a first substituted cyclopentadienyl...
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6884902 |
Organometallic iridium compound, process of producing the same, and process of producing thin film
An organometallic compound having a low melting point, excellent vaporization characteristic and low film formation temperature on a substrate, for forming an iridium-containing thin film by the...
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6884901 |
Methods for making metallocene compounds
A method for producing Group 8 (VIII) metallocene or metallocene-like compounds employs a compound that includes a Cp′ anion, such as found, together with a counterion, in a cyclopentadienide or...
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6838573 |
Copper CVD precursors with enhanced adhesion properties
This invention relates to copper(+1)(β-diketonate)(L) and related copper complexes such as copper (+1)(β-ketoiminate)(L) represented by the formula:
wherein X represents O or NR 9 , R 1 and...
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6831188 |
Dihydrocarbylamino metal compounds
This invention provides a process of preparing dihydrocarbylamido metal compounds. This process comprises bringing together, in a liquid reaction medium, at least one metal halide, MX 4 , where M...
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6822107 |
Chemical vapor deposition precursors for deposition of copper
Copper precursors of the formula (I): wherein: Cu is Cu(I) or Cu(II); x is an integer having a value of from 0 to 4; each of R, R′ and R″ may be the same as or different from one another and...
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6818783 |
Volatile precursors for deposition of metals and metal-containing films
This invention is directed to a group of novel homologous eight membered ring compounds having a metal, such as copper, reversibly bound in the ring and containing carbon, nitrogen, silicon and/or...
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6767830 |
Br2SbCH3 a solid source ion implant and CVD precursor
A volatile solid-source novel antimony precursor, Br 2 SbCH 3 , that may be utilized in semiconductor processing chambers for depositing antimony on a substrate by deposition methods, e.g.,...
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6753437 |
CVD material compound and method for manufacturing the same, and CVD method of iridium or iridium compound thin film
The present invention relates to a raw material for CVD comprising an organic iridium compound as a main component, said organic iridium compound being tris(2,4-octanedionato)iridium represented by...
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6743933 |
Process of forming thin film and precursor for chemical vapor deposition
A process of producing a strontium titanate, barium titanate or barium strontium titanate thin film by chemical vapor deposition which comprises using a titanium compound represented by formula...
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6689427 |
Group IV metal precursors and a method of chemical vapor deposition using the same
An organometallic precursor of a formula M(L) 2 for use in formation of metal oxide thin films, in which M is a group IV metal ion having a charge of +4 and L is a tridentate ligand having a...
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6683198 |
Group(III)-metal-hydrides with a guanidino-type ligand
A compound of formula (I) wherein X is aluminium, gallium or indium; each Y, which may be the same or different, is nitrogen or phosphorus; R 1 and R 2 , which may be the same or different, are...
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6620956 |
Nitrogen analogs of copper II β-diketonates as source reagents for semiconductor processing
Nitrogen containing analogs of Copper II β-diketonates which analogs are more stable source reagents for copper deposition when substantially free of solvents of excess ligands. The nitrogen...
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6605735 |
Ruthenium complex, process for producing the same and process for producing thin film
A ruthenium-containing thin film is produced by the chemical vapor deposition method etc. with the use of an organometallic ruthenium compound represented by the general formula (1), specific...
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6582780 |
Substrate support for use in a hot filament chemical vapor deposition chamber
A carbon deposition chamber is provided with several advantages. The substrate and the heating filaments are cooled to a temperature to prevent carbonization by permitting a cooling fluid to be...
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6559328 |
Indium source reagent compositions, and use thereof for deposition of indium-containing films on substrates and ion implantation of indium-doped shallow junction microelectronic structures
An indium precursor composition having utility for incorporation of indium in a microelectronic device structure, e.g., as an indium-containing film on a device substrate by bubbler or liquid...
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6555701 |
CVD material compound and method for manufacturing the same and CVD method of ruthenium or ruthenium compound thin film
The present invention provides a CVD material compound based on an organic ruthenium compound, the organic ruthenium compound consisting of one of cis and trans isomers of tris (2,4-octa-dionato)...
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6548685 |
Process for preparing tantalum alkoxides and niobium alkoxides
The invention relates to a process for preparing niobium(V) alkoxides and tantalum(V) alkoxides, in particular niobium(V) ethoxide and tantalum(V) ethoxide, by reacting NbCl 5 or TaCl 5 with an...
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6534666 |
Use of water and acidic water to purify liquid MOCVD precursors
This invention relates to an improvement in a purification process for producing those liquid copper based complexes of β-diketones and, particularly the monovalent copper complexes of...
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6528115 |
Hard carbon thin film and method of forming the same
A hard carbon thin film formed on a substrate has a graded structure in which a ratio of sp 2 to sp 3 carbon-carbon bonding in the thin film decreases in its thickness direction from a thin...
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6517913 |
Method and apparatus for reducing perfluorocompound gases from substrate processing equipment emissions
An apparatus for converting PFC gases exhausted from semiconductor processing equipment to less harmful, non-PFC gases. One embodiment of the apparatus includes a silicon filter and a plasma...
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6432281 |
Process for formation of a coating on a substrate
A process for forming a coating on a substrate by condensation of a coating material onto the substrate while the substrate is moving through an enclosure under vacuum in which evaporation of the...
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6420582 |
Organometallic compounds for chemical vapor deposition and their preparing processes, and processes for chemical vapor deposition of precious-metal films and precious-metal compound films
A first organometallic compound is an organometallic compound for manufacturing a ruthenium film or a ruthenium compound film by a chemical vapor deposition process, wherein the organometallic...
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6271802 |
Three dimensional micromachined electromagnetic device and associated methods
A micro-electromagnetic device having a three dimensional structure is formed using laser chemical vapor deposition on a conductive surface. Arrays of electromagnetic devices may be formed. Various...
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6177146 |
Densification of a porous structure (III)
A method for the densification of an annular body having a porous structure and comprising layers of fabric, which includes locating a susceptor element within the porous body, the amount of the...
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6130345 |
Copper (1) precursors for chemical deposit in gas phase of metallic copper
The invention concerns complex compounds of oxidised copper (+1) stabilised by a ligand for the gas phase chemical deposit of copper in which copper is coordinated with a β-diketonate and the...
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6117498 |
Single source thermal ablation method for depositing organic-inorganic hybrid films
In order to form a film of organic-inorganic hybrid material, such as a perovskite material, in a selected stoichiometric ratio upon a surface of a substrate, the proposed method entails a number...
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6117487 |
Process for forming metal oxide film by means of CVD system
A process for forming a metal oxide film by means of a chemical vapor deposition system, which comprises using a complex of a β-diketone compound and a group IV metal glycolate, the complex being...
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6057031 |
Plastic substrate with thin metal-containing layer
The invention relates to a composite composed of a plastic substrate and a thin, continuous metal-containing layer, characterised in that the metal-containing layer is ductile, adheres firmly to...
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6046364 |
Regeneration of metal CVD precursors
A process for recovering a 1,1,1,5,5,5-hexafluoro-2,4-pentanedione ligand from a metal-ligand complex byproduct such as Cu +2 (1,1,1,5,5,5-hexafluoro-2,4-pentanedionate -1 ) 2 , comprising:...
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6015918 |
Allyl-derived precursor and synthesis method
A Cu(hfac) allyl-derived ligand precursor has been provided. The ligand includes group consisting of alkyl, phenyl, trialkylsilane, trialkoxylsilane, halodialkylsilane, dihaloalkylsilane,...
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5994571 |
Substituted ethylene precursor and synthesis method
A Cu(hfac) precursor with a substituted ethylene ligand has been provided. The substituted ethylene ligand includes bonds to molecules selected from the group consisting of C 1 to C 8 alkyl, C 1 ...
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5929267 |
Trimethyl(ethylcyclopentadienyl)platinum, process for producing the same and process for producing platinum-containing films with the use of the same
A Pt compound which is in the form of a liquid at room temperature for producing Pt films usable as electrode films in semiconductor devices by the CVD method; a process for producing the compound;...
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5834058 |
Organometallic complexes of aluminium, gallium and indium
Novel organometallic complexes of aluminium, gallium and indium are disclosed, having improved stability and volatility for use in CVD processes. These are donor ligand complexes of the formula MR...
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5767301 |
Precursor with (alkyloxy)(alkyl)-silylolefin ligand to deposit copper
A method is provided for applying chemical vapor deposition (CVD) copper (Cu) to integrated circuit substrates using a Cu(hfac)(ligand) precursor with a silylolefin ligand including combinations of...
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