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7629032 |
Method for building up plasma on an optical fiber preform, while reducing nitrogen oxides
A plasma buildup method for building up an optical fiber perform. The method includes the steps of: providing a plasma torch having an outlet nozzle adjacent to a primary perform, wherein an...
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7629033 |
Plasma processing method for forming a silicon nitride film on a silicon oxide film
A plasma processing method for forming a silicon nitride film on a silicon oxide film, the method including preparing a substrate on which the silicon oxide film is formed; generating plasma by...
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7625609 |
Formation of silicon nitride film
A method of forming a silicon nitride film which can form a silicon nitride film having a high film stress at a low process temperature is described herein. The method includes the steps of (a)...
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7622162 |
UV treatment of STI films for increasing tensile stress
Using UV radiation, methods to modify shallow trench isolation (STI) film tensile stress to generate channel strain without adversely impacting the efficiency of the transistor fabrication process...
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7622396 |
Method of producing a semiconductor device
A semiconductor device is produced by providing a reaction chamber with a substrate and sequentially repeating steps of: supplying a first kind of gas into the reaction chamber, exhausting the...
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7595096 |
Method of manufacturing vacuum plasma treated workpieces
A method of manufacturing vacuum plasma treated workpieces includes the steps of introducing at least one workpiece to be treated into a vacuum chamber; treating the workpiece in the vacuum...
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7595010 |
Method for producing a doped nitride film, doped oxide film and other doped films
Adding at least one non-silicon precursor (such as a germanium precursor, a carbon precursor, etc.) during formation of a silicon nitride, silicon oxide, silicon oxynitride or silicon carbide film...
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7578889 |
Methodology for cleaning of surface metal contamination from electrode assemblies
Systematic and effective methodology to clean capacitively coupled plasma reactor electrodes and reduce surface roughness so that the cleaned electrodes meet surface contamination specifications...
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7560144 |
Method of stabilizing film quality of low-dielectric constant film
A method of forming a film having a low dielectric constant, comprises the steps of: placing a substrate between an upper electrode and a lower electrode inside a reaction chamber, introducing a...
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7517818 |
Method for forming a nitrided germanium-containing layer using plasma processing
A method and system for forming a nitrided germanium-containing layer by plasma processing. The method includes providing a germanium-containing substrate in a process chamber, generating a plasma...
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7514374 |
Method for manufacturing flat substrates
For avoiding the metallic inner surface of a PECVD reactor to influence thickness uniformity and quality uniformity of a μc-Si layer ( 19 ) deposited on a large-surface substrate, ( 15 ) before...
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7497963 |
Etching method
In this etching method, since an etching gas is introduced before introduction of free radicals into a processing chamber, the etching gas has been adsorbed on the surface of substrates when the...
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7485349 |
Thin film forming method
A method for forming thin films of a semiconductor device is provided. The thin film formation method presented here is based upon a time-divisional process gas supply in a chemical vapor...
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7482035 |
Method of coating a substrate by a thermal application of the coating material
A method of coating a substrate by thermal application of the coating materials using a plasma jet is disclosed. The properties of the plasma jet are determined by controllable process parameters....
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7474376 |
Display device
A display device of the present invention includes a first substrate and a second substrate opposed to each other, a liquid crystal interposed between the first substrate and the second substrate,...
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7455893 |
Staggered in-situ deposition and etching of a dielectric layer for HDP-CVD
A method and apparatus for depositing a conformal dielectric layer employing a dep-etch technique features selectively reducing the flow of deposition gases into a process chamber where a substrate...
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7422776 |
Low temperature process to produce low-K dielectrics with low stress by plasma-enhanced chemical vapor deposition (PECVD)
Low K dielectric films exhibiting low mechanical stress may be formed utilizing various techniques in accordance with the present invention. In one embodiment, carbon-containing silicon oxide films...
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7422774 |
Method for forming ultra low k films using electron beam
The present invention generally provides a method for depositing a low dielectric constant film using an e-beam treatment. In one aspect, the method includes delivering a gas mixture comprising one...
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7390537 |
Methods for producing low-k CDO films with low residual stress
Methods of preparing a carbon doped oxide (CDO) layer with a low dielectric constant and low residual stress are provided. The methods involve, for instance, providing a substrate to a deposition...
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7381451 |
Strain engineering—HDP thin film with tensile stress for FEOL and other applications
High density plasma (HDP) techniques form high tensile stress silicon oxide films. The HDP techniques use low enough temperatures to deposit high tensile stress silicon oxide films in transistor...
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7326444 |
Methods for improving integration performance of low stress CDO films
Methods of preparing a carbon doped oxide (CDO) layer with a low dielectric constant (<3) and low residual stress without sacrificing important integration properties such as dry etch rate, film...
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7288292 |
Ultra low k (ULK) SiCOH film and method
The present invention provides a multiphase, ultra low k film which exhibits improved elastic modulus and hardness as well as various methods for forming the same. The multiphase, ultra low k...
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7273638 |
High density plasma oxidation
A method of oxidizing a substrate having area of about 30,000 mm 2 or more. The surface is preferably comprised of silicon-containing materials, such as silicon, silicon germanium, silicon...
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7223446 |
Plasma CVD apparatus and dry cleaning method of the same
In a parallel flat plate type plasma CVD apparatus, plasma damage of constituent parts in a reaction chamber due to irregularity of dry cleaning in the reaction chamber is reduced and the cost is...
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7220687 |
Method to improve water-barrier performance by changing film surface morphology
A method and apparatus for depositing a material layer onto a substrate is described. The method includes placing the substrate in a process chamber, delivering a mixture of precursors for the...
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7214600 |
Method to improve transmittance of an encapsulating film
A method for depositing a carbon-containing material layer onto a substrate includes delivering a mixture of precursors for the carbon-containing material layer into a process chamber, doping the...
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7192626 |
Methods for producing silicon nitride films and silicon oxynitride films by thermal chemical vapor deposition
Silicon nitride film is formed on substrate by feeding trisilylamine and ammonia into a CVD reaction chamber that contains a substrate. The ammonia gas/trisilylamine gas flow rate ratio is set to a...
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7163721 |
Method to plasma deposit on organic polymer dielectric film
A method for protecting an organic polymer underlayer during a plasma assisted process of depositing a subsequent film on the organic polymer underlayer is disclosed. The method provides the...
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7147900 |
Method for forming silicon-containing insulation film having low dielectric constant treated with electron beam radiation
A silicon-containing insulation film is formed on a substrate by plasma reaction using a reaction gas including (i) a source gas comprising a silicon-containing hydrocarbon compound containing...
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7144521 |
High aspect ratio etch using modulation of RF powers of various frequencies
A method for etching a high aspect ratio feature through a mask into a layer to be etched over a substrate is provided. The substrate is placed in a process chamber, which is able to provide RF...
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7141278 |
Thin film forming method
A method for forming thin films of a semiconductor device is provided. The thin film formation method presented here is based upon a time-divisional process gas supply in a chemical vapor...
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7141277 |
Self-generating inorganic passivation layers for polymer-layered silicate nanocomposites
A method for preparing high-use temperature, light-weight polymer/inorganic nanocomposite materials with enhanced thermal stability and performance characteristics, which comprises treating a...
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7132134 |
Staggered in-situ deposition and etching of a dielectric layer for HDP CVD
A method and apparatus for depositing a conformal dielectric layer employing a dep-etch technique features selectively reducing the flow of deposition gases into a process chamber where a substrate...
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7125583 |
Chemical vapor deposition chamber pre-deposition treatment for improved carbon doped oxide thickness uniformity and throughput
A method for improving thickness uniformity and throughput of a carbon doped oxide deposition process is described. That method comprises removing pre-deposition steps in a deposition phase....
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7101815 |
Method for improving thickness uniformity of deposited ozone-TEOS silicate glass layers
A method for depositing highly conformal silicate glass layers via chemical vapor deposition through the reaction of TEOS and O 3 is provided, comprising placing an in-process semiconductor wafer...
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7087271 |
Method for preparing low dielectric films
A low dielectric constant hydrogenated silicon-oxycarbide (SiCO:H) film is prepared by bringing an organosilicon or organosilicate compound having at least one vinyl or ethynyl group, or a mixture...
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7081271 |
Cyclical deposition of refractory metal silicon nitride
Embodiments of the invention relate to an apparatus and method of cyclical layer deposition utilizing three or more precursors. In one embodiment, the method includes providing at least one cycle...
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7060323 |
Method of forming interlayer insulating film
A material containing, as a main component, an organic silicon compound represented by the following general formula:
R 1 x Si(OR 2 ) 4-x...
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7052552 |
Gas chemistry cycling to achieve high aspect ratio gapfill with HDP-CVD
A method and apparatus are disclosed for depositing a dielectric film in a gap having an aspect ratio at least as large as 6:1. By cycling the gas chemistry of a high-density-plasma...
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7031600 |
Method and apparatus for silicon oxide deposition on large area substrates
A method and apparatus for depositing a dielectric material at a rate of at least 3000 Angstroms per minute on a large area substrate that has a surface area of at least about 0.35 square meters is...
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6984595 |
Layer member forming method
A vapor reaction method including the steps of providing a pair of first and second electrodes within a reaction chamber where the pair of electrodes are arranged substantially parallel with each...
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6962732 |
Process for controlling thin film uniformity and products produced thereby
Processes for controlling thickness uniformity of thin organosilicate films as they are deposited on a substrate, and as they finally result. During deposition of the film, which may be...
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6955836 |
Silicon oxide film formation method
A silicon oxide film formation method enhances the efficiency of generating atomic oxygen and improves film quality of a silicon film (SiO 2 film) in forming the silicon oxide film using an RS-CVD...
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6953609 |
High-density plasma process for depositing a layer of silicon nitride
A high-density plasma process is proposed for depositing a layer of Silicon Nitride on a substrate in a plasma reactor. The process includes the steps of: providing a gas including precursor...
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6936309 |
Hardness improvement of silicon carboxy films
A method for depositing a low dielectric constant film having an improved hardness and elastic modulus is provided. In one aspect, the method comprises depositing a low dielectric constant film...
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6929831 |
Methods of forming nitride films
A silicon nitride film, for example, is deposited by introducing into a plasma region of a chamber a silicon containing gas, molecular nitrogen and sufficient hydrogen to dissociate the nitrogen to...
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6929830 |
Plasma treatment method and method of manufacturing optical parts using the same
A method for treating a non-planar surface of an object by employing a plasma treatment apparatus in which a microwave dielectric has a non-planar surface corresponding to the surface of the...
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6919107 |
Method and device for treating surfaces using a glow discharge plasma
In a process for treating a surface with the aid of a glow discharge plasma sustained in a gas of substantially ambient pressure between two electrodes ( 10, 10 ′) unwanted effects of plasma...
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6911233 |
Method for depositing thin film using plasma chemical vapor deposition
A thin film deposition method using plasma enhanced chemical vapor deposition is described. In a plasma enhanced chemical vapor deposition chamber, plasma is used to enhance the chemical reaction...
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6905737 |
Method of delivering activated species for rapid cyclical deposition
A method for providing activated species for a cyclical deposition process is provided. In one aspect, the method includes delivering a gas to be activated into a plasma generator, activating the...
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