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Match Document Document Title
8182884 Process for application of a hydrophilic coating to fuel cell bipolar plates  
A process comprising: depositing a coating on a fuel cell bipolar plate using plasma assisted chemical vapor deposition.
8182866 Method of producing a substrate which is coated with a mesoporous layer and use thereof in ophthalmic optics  
The invention relates to a method of producing a substrate which is coated with a mesoporous layer and to the use thereof in ophthalmic optics. The inventive method comprises the following steps...
8178448 Film formation method and apparatus for semiconductor process  
Disclosed is a method for using a film formation apparatus to form a silicon nitride film by CVD on target substrates while suppressing particle generation. The apparatus includes a process...
8168270 Film formation method and apparatus for semiconductor process  
An oxide film is formed on a target substrate by CVD, in a process field to be selectively supplied with a first process gas including a source gas containing a film source element and no amino...
8168268 Thin film deposition via a spatially-coordinated and time-synchronized process  
A deposition system and process for the formation of thin film materials. In one embodiment, the process includes forming an initial plasma from a first material stream and allowing the plasma to...
8119208 Apparatus and method for focused electric field enhanced plasma-based ion implantation  
There is disclosed an apparatus and method for focused electric field enhanced plasma-based ion implantation. The apparatus includes an implantation chamber, a vacuum pump for maintaining the...
8112889 Method of manufacturing an ink jet printhead  
A method of manufacturing an ink jet printhead, including: arranging a nozzle plate in which there is formed a plurality of nozzles, the nozzle plate having an upper surface and a lower surface,...
8105661 Method for forming porous insulation film  
A method of forming a porous film on a processing target includes: forming fine organic particles by polymerizing an organic compound in a gaseous phase; mixing the fine organic particles with a...
8101245 Plasma deposition of amorphous semiconductors at microwave frequencies  
Apparatus and method for plasma deposition of thin film photovoltaic materials at microwave frequencies. The apparatus avoids deposition on windows or other microwave transmission elements that...
8088563 Reduction in photoresist footing undercut during development of feature sizes of 120NM or less  
We have traced the detachment of photoresist during development of patterned features in the range of about 90 nm and smaller to a combination of the reduced “foot print” of the pattern on the und...
8080290 Film formation method and apparatus for semiconductor process  
A film formation method is used for forming a silicon nitride film on a target substrate by repeating a plasma cycle and a non-plasma cycle a plurality of times, in a process field configured to be...
8076251 Method of manufacturing semiconductor device, method of processing substrate and substrate processing apparatus  
Provided is a method of manufacturing a semiconductor device. The method includes: loading a substrate into a process vessel; performing a process to form an oxide, nitride, or oxynitride film on...
8067065 Fibrillar, nanotextured coating and method for its manufacture  
A fibrillar, nanotextured coating is deposited on a substrate by contacting the substrate with a reaction mixture comprising a reagent which is hydrolyzable to produced a cross-linked reaction...
8053038 Method for making titanium-based compound film of poly silicon solar cell  
A method is disclosed for making a titanium-based compound film of a poly-silicon solar cell. In the method, a ceramic substrate is made of aluminum oxide. The ceramic substrate is coated with a...
8043668 Method for production of an ethylene/tetrafluorideethylene copolymer molded product  
Provided is a method for depositing a fluorine-doped silicon oxide film on the surface of a substrate made of a material comprising at least 50 mass % of an ethylene/tetrafluoroethylene copolymer....
8029875 Plasma immersion ion processing for coating of hollow substrates  
The present disclosure relates to a method for plasma ion deposition and coating formation. A vacuum chamber may be supplied, wherein the vacuum chamber is formed by a hollow substrate having a...
8003174 Method for forming dielectric film using siloxane-silazane mixture  
A method of forming a dielectric film, includes: introducing a siloxane gas essentially constituted by Si, O, C, and H and a silazane gas essentially constituted by Si, N, H, and optionally C into...
7972663 Method and apparatus for forming a high quality low temperature silicon nitride layer  
A method of forming a silicon nitride layer is described. According to the present invention, a silicon nitride layer is deposited by thermally decomposing a silicon/nitrogen containing source gas...
7959987 Fuel cell conditioning layer  
A method and apparatus for depositing a material layer to treat and condition a substrate, such as a fuel cell part, is described. The method includes depositing a hydrophilic material layer on a...
7947339 Process for producing electrophotographic roller member  
A process for producing an electrophotographic roller member comprising a roller base member having a conductive mandrel and an elastic layer, and a film on the elastic layer. The process comprises...
7947338 Method of forming an interlayer insulating film having a siloxane skeleton  
In a method of forming an interlayer insulating film by plasma CVD, an organic siloxane compound including one or more silicon atoms each having at least three or more units each represented by a...
7947330 Production method of film, and film  
A production method of a film of the present invention is a production method of a film, in which after a polymer base is wound off, metal is evaporated, and an oxygen gas is introduced and the...
7943195 Porogens, porogenated precursors and methods for using the same to provide porous organosilica glass films with low dielectric constants  
A porous organosilica glass (OSG) film consists of a single phase of a material represented by the formula SivOwCxHyFz, where v+w+x+y+z=100%, v is from 10 to 35 atomic %, w is from 10 to 65 atomic...
7935425 Insulating film material containing organic silane or organic siloxane compound, method for producing same, and semiconductor device  
A material for insulating film suitable as an interlayer insulating material for a semiconductor device, from which an insulating film is formed by chemical vapor deposition, and an insulating film...
7927670 Silica microspheres, method for making and assembling same and possible uses of silica microspheres  
The invention concerns silica microspheres (M) having an outer diameter between 50 and 125 μm, preferably between 60 and 90 μm, a wall thickness not less than 1 μm, preferably between 1 and 3 μm...
7892648 SiCOH dielectric material with improved toughness and improved Si-C bonding  
A low-k dielectric material with increased cohesive strength for use in electronic structures including interconnect and sensing structures is provided that includes atoms of Si, C, O, and H in...
7887891 Apparatus for plasma-enhanced chemical vapor deposition (PECVD) of an internal barrier layer inside a container, said apparatus including a gas line isolated by a solenoid valve  
A machine (1) for depositing a thin layer of a barrier-effect material inside a container (2) by plasma-enhanced chemical vapor deposition, said machine (1) comprising: a processing unit (4)...
7875315 Porous inorganic solids for use as low dielectric constant materials  
This disclosure relates generally to polymeric networks of fullerene compounds, to methods of preparing precursors for such networks, and to their subsequent use as low dielectric constant...
7858158 Plasma deposition apparatus and method for making polycrystalline silicon  
A plasma deposition apparatus for making polycrystalline silicon including a chamber for depositing said polycrystalline silicon, the chamber having an exhaust system for recovering un-deposited...
7851030 Method of reducing number of particles on low-k material layer  
A method of reducing the number of particles on a low-k material layer is described. The low-k material layer is formed by a plasma enhanced chemical vapor deposition process, wherein a reaction...
7846512 Method for producing patterns in a polymer layer  
A method for producing patterns in a polymer layer. Polymer sites are formed on a support. These sites are subjected to a plasma deposition of dielectric material and preferably react with this...
7829159 Method of forming organosilicon oxide film and multilayer resist structure  
A method of forming an organosilicon oxide film by plasma CVD includes: (i) adjusting a temperature of a susceptor on which a substrate is placed to lower than 300° C.; (ii) introducing at least ...
7824159 Compressor, titanium-made rotor blade, jet engine and titanium-made rotor blade producing method  
What disclosed is to form an abrasive coating having abrasiveness at a blade pressure side of a deposition layer using a second electrode composed of a second molded body molded from a mixed powder...
7758928 Functionalisation of particles  
This invention relates to a method of functionalizing a powdered substrate. The method comprises the following steps, which method comprises passing a gas into a means for forming excited and/or...
7758929 Plasma processing apparatus and method  
In a plasma processing apparatus in which a radio-frequency power from a radio-frequency power source is supplied to at least one of an upper electrode and a lower electrode disposed to vertically...
7754294 Method of improving the uniformity of PECVD-deposited thin films  
We have discovered that controlling a combination of PECVD deposition process parameters during deposition of silicon-containing thin film provides improved control over surface standing wave...
7749563 Two-layer film for next generation damascene barrier application with good oxidation resistance  
A method is provided for processing a substrate including providing a processing gas comprising an organosilicon compound comprising a phenyl group to the processing chamber, and reacting the...
7732010 Method for supporting a glass substrate to improve uniform deposition thickness  
A method for supporting a glass substrate comprising providing a substrate support having an aluminum body, a substrate contact area formed on the surface of the substrate support, wherein the...
7666478 Biomolecule immobilisation using atmospheric plasma technology  
The present invention is related to a method for immobilising a biomolecule on a surface by generating and maintaining an atmospheric pressure plasma, the method comprising the steps of:...
7651741 Processes for forming a support and organic electroluminescence element including the support  
A support that includes a flexible substrate and provided thereon, one or two or more polymer layers and one or two or more sealing layers, wherein at least one of the polymer layers and the...
7629033 Plasma processing method for forming a silicon nitride film on a silicon oxide film  
A plasma processing method for forming a silicon nitride film on a silicon oxide film, the method including preparing a substrate on which the silicon oxide film is formed; generating plasma by...
7629032 Method for building up plasma on an optical fiber preform, while reducing nitrogen oxides  
A plasma buildup method for building up an optical fiber perform. The method includes the steps of: providing a plasma torch having an outlet nozzle adjacent to a primary perform, wherein an...
7601402 Method for forming insulation film and apparatus for forming insulation film  
A method for forming a porous insulating film includes an insulating film forming step and a hole forming step. During the insulating film forming step, plasma processing of an organic siloxane...
7595097 Expanding thermal plasma deposition system  
A system to coat a substrate includes a deposition chamber maintained at sub-atmospheric pressure, one or more arrays containing two or more expanding thermal plasma sources associated with the...
7578889 Methodology for cleaning of surface metal contamination from electrode assemblies  
Systematic and effective methodology to clean capacitively coupled plasma reactor electrodes and reduce surface roughness so that the cleaned electrodes meet surface contamination specifications...
7560144 Method of stabilizing film quality of low-dielectric constant film  
A method of forming a film having a low dielectric constant, comprises the steps of: placing a substrate between an upper electrode and a lower electrode inside a reaction chamber, introducing a...
7514342 Method and apparatus for forming deposited film  
A method of forming a deposited film according to the present invention includes: introducing a starting gas into a discharge space in a reaction vessel; and applying electric power to generate...
7473443 Composition for forming silicon film and method for forming silicon film  
There are provided a silicon-film-forming composition containing silicon particles and a dispersion medium and a method for forming a silicon film by forming a coating film of the...
7465478 Plasma immersion ion implantation process  
A method of processing a workpiece includes placing the workpiece on a workpiece support pedestal in a main chamber with a gas distribution showerhead, introducing a process gas into a remote...
7462569 Method of manufacturing semiconductor device  
A method of manufacturing a semiconductor device bakes a first semiconductor substrate on which a sacrifice film is formed in a reaction chamber to preliminarily coat an inner wall of the reaction...
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