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7629032 |
Method for building up plasma on an optical fiber preform, while reducing nitrogen oxides
A plasma buildup method for building up an optical fiber perform. The method includes the steps of: providing a plasma torch having an outlet nozzle adjacent to a primary perform, wherein an...
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7629033 |
Plasma processing method for forming a silicon nitride film on a silicon oxide film
A plasma processing method for forming a silicon nitride film on a silicon oxide film, the method including preparing a substrate on which the silicon oxide film is formed; generating plasma by...
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7601402 |
Method for forming insulation film and apparatus for forming insulation film
A method for forming a porous insulating film includes an insulating film forming step and a hole forming step. During the insulating film forming step, plasma processing of an organic siloxane...
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7595097 |
Expanding thermal plasma deposition system
A system to coat a substrate includes a deposition chamber maintained at sub-atmospheric pressure, one or more arrays containing two or more expanding thermal plasma sources associated with the...
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7578889 |
Methodology for cleaning of surface metal contamination from electrode assemblies
Systematic and effective methodology to clean capacitively coupled plasma reactor electrodes and reduce surface roughness so that the cleaned electrodes meet surface contamination specifications...
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7560144 |
Method of stabilizing film quality of low-dielectric constant film
A method of forming a film having a low dielectric constant, comprises the steps of: placing a substrate between an upper electrode and a lower electrode inside a reaction chamber, introducing a...
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7514342 |
Method and apparatus for forming deposited film
A method of forming a deposited film according to the present invention includes: introducing a starting gas into a discharge space in a reaction vessel; and applying electric power to generate...
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7473443 |
Composition for forming silicon film and method for forming silicon film
There are provided a silicon-film-forming composition containing silicon particles and a dispersion medium and a method for forming a silicon film by forming a coating film of the...
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7465478 |
Plasma immersion ion implantation process
A method of processing a workpiece includes placing the workpiece on a workpiece support pedestal in a main chamber with a gas distribution showerhead, introducing a process gas into a remote...
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7462569 |
Method of manufacturing semiconductor device
A method of manufacturing a semiconductor device bakes a first semiconductor substrate on which a sacrifice film is formed in a reaction chamber to preliminarily coat an inner wall of the reaction...
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7455892 |
Method and apparatus for forming a coating
A method for forming a coating on a substrate using an atmospheric pressure plasma discharge. The method comprises introducing an atomized liquid and/or solid coating-forming material into an...
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7435454 |
Plasma enhanced atomic layer deposition system and method
A method for depositing a film on a substrate using a plasma enhanced atomic layer deposition (PEALD) process includes disposing the substrate in a process chamber configured to facilitate the...
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7429410 |
Diffuser gravity support
An apparatus and method for supporting a substantial center portion of a gas distribution plate is disclosed. At least one support member is capable of engaging and disengaging the diffuser with a...
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7422776 |
Low temperature process to produce low-K dielectrics with low stress by plasma-enhanced chemical vapor deposition (PECVD)
Low K dielectric films exhibiting low mechanical stress may be formed utilizing various techniques in accordance with the present invention. In one embodiment, carbon-containing silicon oxide films...
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7396570 |
Plasma enhanced chemical vapor deposition method of forming titanium silicide comprising layers
Chemical vapor deposition methods of forming titanium silicide including layers on substrates are disclosed. TiCl 4 and at least one silane are first fed to the chamber at or above a first...
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7390537 |
Methods for producing low-k CDO films with low residual stress
Methods of preparing a carbon doped oxide (CDO) layer with a low dielectric constant and low residual stress are provided. The methods involve, for instance, providing a substrate to a deposition...
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7371427 |
Reduction of hillocks prior to dielectric barrier deposition in Cu damascene
Unwanted hillocks arising in copper layers due to formation of overlying barrier layers may be significantly reduced by optimizing various process parameters, alone or in combination. A first set...
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7361302 |
Oxidation and fatigue resistant metallic coating
The present invention relates to a metallic coating to be deposited on gas turbine engine components. The metallic coating comprises up to 18 wt % cobalt, 3.0 to 18 wt % chromium, 5.0 to 15 wt %...
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7348041 |
Antireflection film made of a CVD SiO2 film containing a fluoro and/or alkyl modifier
A low refractive index SiO 2 film is provided which uses a starting material for forming an SiO 2 film and has a lower refractive index than the conventional SiO 2 film. A starting material gas...
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7344996 |
Helium-based etch process in deposition-etch-deposition gap fill
Plasma etch processes incorporating helium-based etch chemistries can remove dielectric a semiconductor applications. In particular, high density plasma chemical vapor etch-enhanced...
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7297376 |
Method to reduce gas-phase reactions in a PECVD process with silicon and organic precursors to deposit defect-free initial layers
A method for depositing a low dielectric constant film is provided by positioning a substrate within a processing chamber having a powered electrode, and flowing into the processing chamber an...
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7288284 |
Post-cleaning chamber seasoning method
A method for seasoning a process chamber is disclosed. The seasoning method includes providing a seasoning film on the interior surfaces of a process chamber, typically after cleaning of the chamber.
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7264849 |
Roll-vortex plasma chemical vapor deposition method
A chemical vapor deposition method includes a step of maintaining a hydrogen plasma at low pressure in a processing chamber. The processing chamber has a long, wide, thin geometry to favor...
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7238393 |
Method of forming silicon carbide films
A method for depositing a silicon carbide layer onto a substrate comprises providing a silicon and carbon source gas and an inert gas into a reaction zone. The reaction zone contains the substrate....
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7229935 |
Method of forming a thin film by plasma CVD of a silicon-containing source gas
A method for forming a thin film includes: supplying an additive gas, a dilution gas, and a silicon-containing source gas into a reaction chamber wherein a substrate is placed; forming a thin film...
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7223446 |
Plasma CVD apparatus and dry cleaning method of the same
In a parallel flat plate type plasma CVD apparatus, plasma damage of constituent parts in a reaction chamber due to irregularity of dry cleaning in the reaction chamber is reduced and the cost is...
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7166335 |
Layer formation method, and substrate with a layer formed by the method
A layer formation method is disclosed which comprises supplying gas to a discharge space, exciting the supplied gas at atmospheric pressure or at approximately atmospheric pressure by applying a...
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7147900 |
Method for forming silicon-containing insulation film having low dielectric constant treated with electron beam radiation
A silicon-containing insulation film is formed on a substrate by plasma reaction using a reaction gas including (i) a source gas comprising a silicon-containing hydrocarbon compound containing...
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7144606 |
Plasma treatment to enhance adhesion and to minimize oxidation of carbon-containing layers
The present invention generally provides improved adhesion and oxidation resistance of carbon-containing layers without the need for an additional deposited layer. In one aspect, the invention...
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7112453 |
Retentate chromatography and protein chip arrays with applications in biology and medicine
This invention provides methods of retentate chromatography for resolving analytes in a sample. The methods involve adsorbing the analytes to a substrate under a plurality of different selectivity...
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7087271 |
Method for preparing low dielectric films
A low dielectric constant hydrogenated silicon-oxycarbide (SiCO:H) film is prepared by bringing an organosilicon or organosilicate compound having at least one vinyl or ethynyl group, or a mixture...
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7078356 |
Low K interlevel dielectric layer fabrication methods
A low k interlevel dielectric layer fabrication method includes providing a substrate having integrated circuitry at least partially formed thereon. An oxide comprising interlevel dielectric layer...
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7074461 |
Method for fabricating hydrogenated silicon oxycarbide thin film
A hydrogenated SiOC thin film fabrication method includes supplying bis-trimethylsilylmethane and oxygen retaining gas to a wafer installed inside a reaction channel through one supply pipe,...
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7052552 |
Gas chemistry cycling to achieve high aspect ratio gapfill with HDP-CVD
A method and apparatus are disclosed for depositing a dielectric film in a gap having an aspect ratio at least as large as 6:1. By cycling the gas chemistry of a high-density-plasma...
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7022864 |
Ethyleneoxide-silane and bridged silane precursors for forming low k films
An organosilicon precursor for vapor deposition, e.g., low pressure (<100 Torr), plasma-enhanced chemical vapor deposition (PECVD) of a low k, high strength dielectric film, wherein the...
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6962732 |
Process for controlling thin film uniformity and products produced thereby
Processes for controlling thickness uniformity of thin organosilicate films as they are deposited on a substrate, and as they finally result. During deposition of the film, which may be...
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6953608 |
Solution for FSG induced metal corrosion & metal peeling defects with extra bias liner and smooth RF bias ramp up
A HDP CVD process for depositing a USG liner followed by a FSG dielectric layer on a metal line pattern is described. The substrate is heated in a chamber with a plasma comprised of Ar and O 2 . A...
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6936310 |
Plasma processing method
In a plasma processing method making use of a plasma processing gas of a reactant gas and an inert gas, it is aimed at enhancing an efficiency of use of high-frequency power and a reactant gas to...
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6926932 |
Method for forming silicon oxide layer
A method for forming a silicon oxide layer in the production of the polysilicon film transistor is disclosed. A plasma surface treatment is performed over a substrate after an amorphous silicon...
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6926926 |
Silicon carbide deposited by high density plasma chemical-vapor deposition with bias
A SiC-based layer is deposited on a substrate having an electrical resistivity between about 1 and 100 Ω cm. The substrate is disposed in a process chamber. A gaseous mixture having a...
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6919107 |
Method and device for treating surfaces using a glow discharge plasma
In a process for treating a surface with the aid of a glow discharge plasma sustained in a gas of substantially ambient pressure between two electrodes ( 10, 10 ′) unwanted effects of plasma...
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6916511 |
Method of hardening a nano-imprinting stamp
A method of forming a hardened nano-imprinting stamp is disclosed. The hardened nano-imprinting stamp includes a plurality of silicon-based nano-sized features that have an hardened shell of...
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6911233 |
Method for depositing thin film using plasma chemical vapor deposition
A thin film deposition method using plasma enhanced chemical vapor deposition is described. In a plasma enhanced chemical vapor deposition chamber, plasma is used to enhance the chemical reaction...
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6887514 |
Method of depositing optical films
To deposit optical quality films by PECVD (Plasma Enhanced Chemical Vapor Deposition), a six-dimensional space wherein five dimensions thereof correspond to five respective independent variables of...
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6846515 |
Methods for using porogens and/or porogenated precursors to provide porous organosilica glass films with low dielectric constants
A method for providing a porous organosilica glass (OSG) film that consists of a single phase of a material represented by the formula SivOwCxHyFz, v+w+x+y+z=100%, v is from 10 to 35 atomic %, w is...
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6838127 |
Method and apparatus for forming an HSG-Si layer on a wafer
An HSG-Si layer is formed on a wafer under a uniform temperature condition. An apparatus for forming the HSG-Si layer includes a housing forming a process chamber, a first heater on which the wafer...
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6827987 |
Method of reducing an electrostatic charge on a substrate during a PECVD process
Provided herein is a method of reducing an electrostatic charge on a substrate during a plasma enhanced chemical vapor deposition process, comprising the step of depositing a conductive layer onto...
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6815014 |
Corona-generated chemical vapor deposition on a substrate
A process for creating plasma polymerized deposition on a substrate by a corona discharge is described. The corona discharge is created between an electrode and a counterelectrode supporting a...
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6811831 |
Method for depositing silicon nitride
A method is provided which includes creating a plasma from a gas mixture including diatomic nitrogen gas and a gas comprising silicon. In addition, the method includes exposing a microelectronic...
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6803080 |
Method of forming crystalline silicon film by CVD
A film, typically a silicon-based film, is formed on a substrate by means of a plasma CVD process using a high frequency wave in a condition where a resistance element made of a different material...
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