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4604292 |
X-ray mask blank process
An improved process, optimizing quality and growth rate with independent control of residual stress, is disclosed for the growing of membranes for use as X-ray lithography mask blanks. The process...
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4585668 |
Method for treating a surface with a microwave or UHF plasma and improved apparatus
A method for etching or chemically treating a surface of an article utilizing a radio frequency wave ion generating apparatus which provides a thin disk shaped plasma is described. The plasma disks...
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4581113 |
Process for forming an amorphous silicon film
A process for forming an amorphous silicon film consisting of silicon (Si) and hydrogen (H) bonded in a monohydride state by a cluster ion beam deposition which comprises the step of impinging...
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4578696 |
Thin film semiconductor device
A thin film semiconductor device and a method for manufacturing such a device containing a thin film semiconductor layer in which there is no misalignment between a semiconductor layer containing a...
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4568437 |
Method and apparatus for forming disilane
A method for forming disilane comprises flowing monosilane gas into a reaction vessel while maintaining a glow discharge in the monosilane and flowing the reaction product comprising the disilane...
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4568563 |
Optical fibre manufacture
An optical fibre is provided with a moisture barrier layer by exposing a plastics coating on the fibre to a pulsed plasma in order to modify the surface, for instance by implantation of silicon...
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4560634 |
Electrophotographic photosensitive member using microcrystalline silicon
An electrophotographic photosensitive member constituted of an electroconductive supporting substrate and a photoconductive layer provided on said substrate, said photoconductive layer being...
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4551352 |
Method of making P-type hydrogenated amorphous silicon
A layer of P-type hydrogenated amorphous silicon having a wide band gap and relatively low conductivity is formed by subjecting a substance to a gaseous mixture of a silicon hydride and an acceptor...
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4546008 |
Method for forming a deposition film
A method for forming a deposition film comprises applying an excitation energy to a silane compound (SiOA) in a gaseous state having at least one substituent (OA) of the formula of --OC a H b X c...
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4546009 |
High-mobility amorphous silicon displaying non-dispersive transport properties
The present invention teaches a combination of parameters for the glow discharge decomposition of silane deposition of an amorphous silicon semiconductor having non-dispersive high mobility...
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4543267 |
Method of making a non-single-crystalline semi-conductor layer on a substrate
A multi-layer semiconductor manufacturing method which employs a plurality of sequentially arranged, adjacent reaction chambers and a plurality of normally closed shutter means respectively...
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4539431 |
Pulse anneal method for solar cell
A solar cell including a pulse annealed layer of crystalline, amorphous or polycrystalline semiconductor material of one conductivity type and either a layer of opposite conductivity type or a...
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4537795 |
Method for introducing sweep gases into a glow discharge deposition apparatus
A method for introducing sweep gas through a baffle system adapted for use with glow discharge deposition apparatus in which successive amorphous semiconductor layers are deposited on a substrate....
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4532196 |
Amorphous silicon photoreceptor with nitrogen and boron
A photoreceptor of electrophotography having, on a substrate, an amorphous silicon (a-Si) layer formed by relying on plasma CVD technique, wherein the a-Si layer is formed in the presence of...
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4532150 |
Method for providing a coating layer of silicon carbide on the surface of a substrate
The invention provides a novel method for providing the surface of various kinds of substrate articles, e.g. sapphire, quartz, alumina, metals, glass, plastics and the like with a coating layer of...
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4523544 |
Apparatus for glow discharge deposition of a thin film
A thin amorphous film-forming apparatus comprising a plurality of discharge unit chambers connected in a loop, each provided with a glow discharge generating means and a space for storing a...
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4522663 |
Method for optimizing photoresponsive amorphous alloys and devices
The production of improved photoresponsive amorphous alloys and devices, such as photovoltaic, photoreceptive devices and the like; having improved wavelength threshold characteristics is made...
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4521447 |
Method and apparatus for making layered amorphous semiconductor alloys using microwave energy
An apparatus and process utilizes microwave energy for depositing amorphous alloy materials in layered form onto a receiving surface. The process results in materials having unique properties...
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4519339 |
Continuous amorphous solar cell production system
The continuous production of solar cells by the glow discharge (plasma) deposition of layers of varying electrical characteristics is achieved by advancing a substrate through a succession of...
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4517223 |
Method of making amorphous semiconductor alloys and devices using microwave energy
A process for making amorphous semiconductor alloy films and devices at high deposition rates utilizes microwave energy to form a deposition plasma. The alloys exhibit high quality electronic...
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4514437 |
Apparatus for plasma assisted evaporation of thin films and corresponding method of deposition
An improved method of and apparatus for depositing thin films, such as indium tin oxide, onto substrates, which deposition comprises one step in the fabrication of electronic, semiconductor and...
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4514582 |
Optical absorption enhancement in amorphous silicon deposited on rough substrate
A thin film semiconductor device with enhanced optical absorption properties and a method for producing it. The device comprises a substrate having at least one sandblasted surface and a thin film...
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4513022 |
Process for amorphous silicon films
This invention is directed to a process for preparing semiconducting and photoelectronic devices comprised of a first electrode means, a second counter electrode means, a receptacle means for the...
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4501766 |
Film depositing apparatus and a film depositing method
A film depositing apparatus forms a film with a given thickness on each of a plurality of bases. The apparatus is provided with a casing removably mounted on a base section to form a film...
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4500563 |
Independently variably controlled pulsed R.F. plasma chemical vapor processing
Semiconductive wafers are processed, i.e., etched or layers deposited thereon, by means of a plasma enhanced chemical vapor processing system wherein the plasma is generated by a train of R.F....
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4500565 |
Deposition process
Disclosed herein is a deposition process which comprises, in an air-tight reaction vessel, generating a plasma through a discharge gas by means of a discharge system, disposing a substrate at a...
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4492736 |
Process for forming microcrystalline silicon material and product
A process for forming microcrystalline silicon material includes the steps of introducing a silicon-containing gas, hydrogen gas and a relatively inert gas into a work environment to form a...
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4492810 |
Optimized doped and band gap adjusted photoresponsive amorphous alloys and devices
The production of improved photoresponsive amorphous alloys and devices, such as photovoltaic, photoreceptive devices and the like. The alloys and devices have improved wavelength threshold...
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4485125 |
Method for continuously producing tandem amorphous photovoltaic cells
A method and a multiple chamber apparatus for the continuous production of tandem, amorphous, photovoltaic cells on substrate material, whereby, at least six amorphous semiconductor layers are...
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4485121 |
Method for producing a fluorine-containing amorphous semiconductor
Production of fluorine-containing amorphous semiconductors having high thermal stability, photoconductivity and photosensitivity by decomposing a mixed gas of silicon difluoride gas or silicon...
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4481230 |
Method of depositing a semiconductor layer from a glow discharge
An improved method for the deposition of a semiconductor layer from the positive column of a glow discharge is disclosed. The improvement comprises dividing an electrically conducting layer on a...
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4473597 |
Method and structure for passivating a PN junction
A technique for passivating a PN junction adjacent a surface of a semiconductor substrate comprises coating the area of the surface adjacent the PN junction with a layer of hydrogenated amorphous...
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4472492 |
Method for fabricating and annealing an electrophotographic image forming member
A method for fabricating an electrophotographic image forming member, wherein the first photoconductive layer consisting of an amorphous inorganic semiconductive material is formed on a substrate...
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4466380 |
Plasma deposition apparatus for photoconductive drums
This invention is directed to an apparatus for preparing semiconducting and photoelectronic devices comprised of a first electrode means, a second counter electrode means, a receptacle means for...
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4466992 |
Healing pinhole defects in amorphous silicon films
A method for healing physical defects in semiconductive films is described. A transparent substrate and semiconductive film are passed to a vacuum chamber in which the film layer is contacted with...
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4464415 |
Photoelectric conversion semiconductor manufacturing method
A semi-amporphous, photoelectric conversion semiconductor manufacturing method in which substrates are disposed in a reaction chamber having a gas inlet and a gas outlet and a gas mixture...
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4461783 |
Non-single-crystalline semiconductor layer on a substrate and method of making same
A non-single-crystalline semiconductor layer on a substrate and a method of making same. The non-single-crystalline compound semiconductor layer, which consists principally of silicon and tin and...
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4460673 |
Method of producing amorphous silicon layer and its manufacturing apparatus
Disclosed are method and apparatus for producing amorphous silicon layers for solar cells or electrophotography by plasma-enhanced chemical vapor deposition (CVD) through glow-discharge...
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4457949 |
Method of producing a photoelectric conversion layer
A hydrogen-containing amorphous silicon layer is formed on a substrate held below 200° C., in a plasma atmosphere, whereupon the plasma is stopped and the layer is heated in a temperature range of...
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4452828 |
Production of amorphous silicon film
Disclosed is an production method for plasma chemical vapor deposition (CVD) of amorphous silicon films providing improved throughput and film yield. According to the present invention, a glow...
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4451538 |
High hydrogen amorphous silicon
Amorphous silicon having a high band gap is formed by glow discharge in an atmosphere containing H 2 and SiH 4 in a ratio of at least approximately 9 to 1. The partial pressure of H 2 and SiH 4 ...
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4450185 |
Process for forming amorphous silicon film
A process for forming a deposition film on a substrate comprising introducing a deposition film forming material in gaseous state into a deposition chamber, the inside pressure of which is reduced,...
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4446168 |
Method of forming amorphous silicon
A method of forming, through plasma chemical vapor deposition technique, an amorphous silicon film, one side thereof intended for ohmic contact with specifically an aluminum electrode in a...
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4443488 |
Plasma ion deposition process
A plasma ion deposition process of large-grain, thin semiconductor films directly on low-cost amorphous substrates comprising ionizing a semiconductor-based gaseous compound in a chamber by an...
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4439463 |
Plasma assisted deposition system
Process for use in the deposition of a semiconductor film involves: producing a stream of reactive gaseous species within a first chamber, the reactive species containing a substance to be included...
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4438723 |
Multiple chamber deposition and isolation system and method
The formation of a body of material on a substrate having at least two layers of different composition is made possible by the improved system and method of the present invention with minimized...
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4432781 |
Method for manufacturing fused quartz glass
The invention provides a novel method for manufacturing fused quartz glass by the decomposition and oxidation of a vaporizable silicon compound such as silicon tetrachloride in a plasma flame...
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4430185 |
Method of producing photoelectric transducers
In the method of producing photoelectric transducers having processes for forming a photoconductive layer on a predetermined substrate with an irregular surface by a method of depositing the...
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4417911 |
Manufacture of optical fibre preforms
In the manufacture of a glass optical fibre preform by forming a coating of oxide material on the interior surface of a substrate tube, in particular a coating of silica and one or more dopant...
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4415602 |
Reactive plating method and product
A method is disclosed for the reactive plating of substrates to produce transparent conducting films and photoactive coatings. Reactive gases at low pressures are introduced into a vacuum chamber...
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