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7622193 |
Coated substrates and methods for their preparation
Coated substrates containing a barrier layer comprising hydrogenated silicon oxycarbide having a density of at least 1.6 g/cm 3 and methods of preparing the coated substrates.
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7578889 |
Methodology for cleaning of surface metal contamination from electrode assemblies
Systematic and effective methodology to clean capacitively coupled plasma reactor electrodes and reduce surface roughness so that the cleaned electrodes meet surface contamination specifications...
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7531068 |
Method for manufacturing silicon nanodot film for light emission in nano-size photonic devices
A method for manufacturing a silicon nanodot thin film having uniform doping concentration without damage by placing a substrate on a stage within a chamber. The method further including depositing...
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7465478 |
Plasma immersion ion implantation process
A method of processing a workpiece includes placing the workpiece on a workpiece support pedestal in a main chamber with a gas distribution showerhead, introducing a process gas into a remote...
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7399388 |
Sequential gas flow oxide deposition technique
A method of depositing a silica glass insulating film over a substrate. In one embodiment the method comprises exposing the substrate to a silicon-containing reactant introduced into a chamber in...
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7396570 |
Plasma enhanced chemical vapor deposition method of forming titanium silicide comprising layers
Chemical vapor deposition methods of forming titanium silicide including layers on substrates are disclosed. TiCl 4 and at least one silane are first fed to the chamber at or above a first...
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7381451 |
Strain engineering—HDP thin film with tensile stress for FEOL and other applications
High density plasma (HDP) techniques form high tensile stress silicon oxide films. The HDP techniques use low enough temperatures to deposit high tensile stress silicon oxide films in transistor...
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7348041 |
Antireflection film made of a CVD SiO2 film containing a fluoro and/or alkyl modifier
A low refractive index SiO 2 film is provided which uses a starting material for forming an SiO 2 film and has a lower refractive index than the conventional SiO 2 film. A starting material gas...
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7238393 |
Method of forming silicon carbide films
A method for depositing a silicon carbide layer onto a substrate comprises providing a silicon and carbon source gas and an inert gas into a reaction zone. The reaction zone contains the substrate....
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7112453 |
Retentate chromatography and protein chip arrays with applications in biology and medicine
This invention provides methods of retentate chromatography for resolving analytes in a sample. The methods involve adsorbing the analytes to a substrate under a plurality of different selectivity...
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7074641 |
Method of forming silicon-based thin film, silicon-based thin film, and photovoltaic element
A method of forming a silicon-based thin film according to the present invention comprises introducing a source gas containing silicon fluoride and hydrogen into a vacuum vessel, and using a high...
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7060514 |
Process for fabricating films of uniform properties on semiconductor devices
A process for forming a thin layer exhibiting a substantially uniform property on an active surface of a semiconductor substrate includes varying the temperature within a reaction chamber while a...
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6974780 |
Semiconductor processing methods of chemical vapor depositing SiO2 on a substrate
The invention provides semiconductor processing methods of depositing SiO 2 on a substrate. In a preferred aspect, the invention provides methods of reducing the formation of undesired reaction...
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6929831 |
Methods of forming nitride films
A silicon nitride film, for example, is deposited by introducing into a plasma region of a chamber a silicon containing gas, molecular nitrogen and sufficient hydrogen to dissociate the nitrogen to...
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6926934 |
Method and apparatus for deposited film
In a deposited-film formation method or apparatus according to the present invention, which comprises providing a discharge electrode in a vacuum vessel equipped with exhaust means, supplying a...
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6916541 |
Modified substrates for the attachment of biomolecules
The present invention relates to a substrate for attachment of biomolecules. The substrate is coated with a multiamino organosilane. If desired, the substrate can be further modified prior to...
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6887514 |
Method of depositing optical films
To deposit optical quality films by PECVD (Plasma Enhanced Chemical Vapor Deposition), a six-dimensional space wherein five dimensions thereof correspond to five respective independent variables of...
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6858265 |
Technique for improving chucking reproducibility
Method and apparatus for improving the reproducibility of chucking forces of an electrostatic chuck used in plasma enhanced CVD processing of substrates provides for precoating of the electrostatic...
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6846391 |
Process for depositing F-doped silica glass in high aspect ratio structures
A process for filling high aspect ratio gaps on substrates uses conventional high density plasma deposition processes to deposit fluorine-doped films, with an efficient sputtering inert gas, such...
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6838126 |
Method for forming I-carbon film
A film comprising an i-carbon is formed by converting a reactive gas containing a carbon compound gas into plasma by a resonance using a microwave and a magnetic field.
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6838127 |
Method and apparatus for forming an HSG-Si layer on a wafer
An HSG-Si layer is formed on a wafer under a uniform temperature condition. An apparatus for forming the HSG-Si layer includes a housing forming a process chamber, a first heater on which the wafer...
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6830786 |
Silicon oxide film, method of forming the silicon oxide film, and apparatus for depositing the silicon oxide film
A silicon oxide film has a ratio of A 1 to A 2 which is not higher than 0.21, where A 1 is a first peak integrated intensity of a first peak belonging to Si—OH and appearing in the vicinity of...
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6827987 |
Method of reducing an electrostatic charge on a substrate during a PECVD process
Provided herein is a method of reducing an electrostatic charge on a substrate during a plasma enhanced chemical vapor deposition process, comprising the step of depositing a conductive layer onto...
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6803080 |
Method of forming crystalline silicon film by CVD
A film, typically a silicon-based film, is formed on a substrate by means of a plasma CVD process using a high frequency wave in a condition where a resistance element made of a different material...
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6780786 |
Method for producing a porous silicon film
A membrane structure comprising a silicon film having a grain structure including grains defining pores therebetween.
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6756085 |
Ultraviolet curing processes for advanced low-k materials
Low dielectric constant materials with improved elastic modulus and material hardness. The process of making such materials involves providing a dielectric material and ultraviolet (UV) curing the...
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6756293 |
Combined gate cap or digit line and spacer deposition using HDP
A method for fabricating gate electrodes and gate interconnects with a protective silicon oxide or silicon nitride cap and spacer formed by high density plasma chemical vapor deposition (HDPCVD)....
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6753123 |
Process and apparatus for manufacturing electrophotographic photosensitive member
A process for manufacturing an electrophotographic photosensitive member is disclosed in which a source gas is decomposed by the use of a high-frequency power in a rector to deposit sequentially on...
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6736986 |
Chemical synthesis of layers, coatings or films using surfactants
Systems and methods are described for a chemical reaction synthesis of films, coatings or layers using surfactants. A method includes providing a surfactant as an impurity within at least one of a...
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6653245 |
Method for liquid phase deposition
A method for liquid phase deposition, including the steps of providing at least two raw materials from at least two supply devices of a saturation reaction system into a mixture trough and stirring...
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6620247 |
Thin polycrystalline silicon film forming apparatus
A method of forming a thin polycrystalline silicon film and a thin film forming apparatus allowing inexpensive formation of a thin polycrystalline silicon film at a relatively low temperature with...
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6607790 |
Method of forming a thin film for a semiconductor device
The present invention relates to a plasma-enhanced chemical vapor deposition (PECVD) method of depositing a thin layer of a material, such as silicon dioxide, on the surface of a body, such as a...
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6599588 |
Method for surface treatment of metal enclosure
A method for treating a metal enclosure to prevent the enclosure from being contaminated, comprises the steps of: (a) sand-blasting the enclosure; (b) preheating the enclosure to a predetermined...
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6578381 |
Fine glass particle containing embedded oxide and process for producing the same
The oxides-enclosed fine glass particles are arranged such that two or more pieces of at least two kinds of enclosing particles, which comprise oxides, double oxides, or salts of oxyacids, or...
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6541400 |
Process for CVD deposition of fluorinated silicon glass layer on semiconductor wafer
An improved process for depositing a robust fluorosilicate glass film on a substrate in a chamber includes maintaining a total pressure in the chamber of less than about 1.7 torr, introducing vapor...
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6521302 |
Method of reducing plasma-induced damage
A method of reducing plasma-induced damage in a substrate, comprising providing a post-deposition ramp down of a plasma source power used in generating a plasma for substrate processing.
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6488995 |
Method of forming microcrystalline silicon film, method of fabricating photovoltaic cell using said method, and photovoltaic device fabricated thereby
Disclosed herein is a method of forming a microcrystalline silicon film by using a raw gas containing at least a silicon compound by a high-frequency plasma CVD method, wherein the formation of the...
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6472299 |
Method and apparatus for treating a substrate with hydrogen radicals at a temperature of less than 40 K
A substrate M having a thin film on its surface is supported on a support 4 . A gas discharge opening 12 A of hydrogen radicals which faces the thin film on the substrate is provided. A...
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6468601 |
Apparatus and method for white powder reduction in silicon nitride deposition using remote plasma source cleaning technology
An apparatus and method for reducing the production of white powder in a process chamber used for depositing silicon nitride. Steps of the method include heating at least a portion of a wall of the...
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6447850 |
Polycrystalline silicon thin film forming method
A method of forming a thin polycrystalline silicon film and a thin film forming apparatus allowing inexpensive formation of a thin polycrystalline silicon film at a relatively low temperature with...
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6444277 |
Method for depositing amorphous silicon thin films onto large area glass substrates by chemical vapor deposition at high deposition rates
Amorphous silicon thin films can be deposited onto large area glass substrates at high deposition rates by chemical vapor deposition using pressure of at least 0.8 Torr and temperatures of about...
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6417079 |
Discharge electrode, high-frequency plasma generator, method of power feeding, and method of manufacturing semiconductor device
A discharge electrode improves the uniformity of discharge such as plasma. The electrical discharge electrode, which receives high-frequency power and produces a discharge, comprises an electrode...
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6410106 |
Method of forming an intermetal dielectric layer
A method is used to form an intermetal dielectric layer. According to the invention, an unbiased-unclamped fluorinated silicate glass layer used as a protection layer is formed by high density...
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6395150 |
Very high aspect ratio gapfill using HDP
A process for filling high aspect ratio gaps on substrates uses conventional high density plasma deposition processes, with an efficient sputtering inert gas, such as Ar, replaced or reduced with...
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6391394 |
Method for manufacturing electrophotographic photosensitive member and jig used therein
A method for manufacturing an electrophotographic photosensitive member in which an aluminum substrate is fitted on a substrate holder and a functional film comprising a non-monocrystalline...
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6391395 |
Method of fabricating a polysilicon layer
The present invention is directed to a method of forming a polysilicon layer. A light shield layer having a super-resolution near-field structure is arranged on an amorphous silicon layer. The...
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6376028 |
Device and method for treating the inside surface of a plastic container with a narrow opening in a plasma enhanced process
The described device is introduced into a plastic container with a narrow opening and serves a plasma enhanced process for treating the inside surface of the container. The device ( 2 ) extends...
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6372304 |
Method and apparatus for forming SiC thin film on high polymer base material by plasma CVD
A high quality transparent SiC thin film can be deposited on the surface of a plastic material at low temperature utilizing Electron Cyclotron Resonance (ECR) Plasma CVD techniques, thereby...
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6365320 |
Process for forming anti-reflective film for semiconductor fabrication using extremely short wavelength deep ultraviolet photolithography
An anti-reflective film for deep ultraviolet (DUV) photolithograghy includes silicon oxime having the formula Si (1−x+y+z) N x O y :H 2 , wherein x, y, and z represent the atomic percentage of...
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6348237 |
Jet plasma process for deposition of coatings
The present invention provides a method for the formation of an organic coating on a substrate. The method includes: providing a substrate in a vacuum; providing at least one vaporized organic...
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