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4196228 |
Fabrication of high resistivity semiconductor resistors by ion implanatation
This disclosure relates to a low power write-once, read-only semiconductor memory (PROM or programmable read only memory) array wherein the semiconductor resistors located in the word line decoder...
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4187124 |
Process for doping semiconductors
A process and apparatus for doping a substrate by ion implantation or discharge. The process comprises the steps of maintaining an electric discharge in an evacuated enclosure containing a gaseous...
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4181537 |
Method of fabricating an insulated gate field effect device
This invention provides a method of making an improved gate structure in which the gate electrode is self-aligned with respect to the field isolation oxide regions. Gate constituting layers are...
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4179792 |
Low temperature CMOS/SOS process using dry pressure oxidation
An enhancement type, self-aligned silicon gate complementary metal oxide semiconductor (CMOS)/silicon on sapphire (SOS) structure is made by generating all gate oxides and oxide isolated regions...
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4179528 |
Method of making silicon device with uniformly thick polysilicon
Thickness control problems inherent in the chemical vapor deposition of polysilicon layers on silicon wafers are avoided by an improved vacuum deposition technique.
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4179312 |
Formation of epitaxial layers doped with conductivity-determining impurities by ion deposition
A method and apparatus for depositing a monocrystalline epitaxial layer of semiconductor material, e.g., silicon containing selected conductivity-determining impurities, on a semiconductor...
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4145457 |
Method for the production of optical directional couplers
A method for the production of optical directional couplers has a substrate with optical waveguides formed in a surface thereof which are longitudinally coupled by having the guides extend parallel...
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4113486 |
Method for producing a photomask
A method for producing a photomask, which comprises exposing and development-processing a photographic light-sensitive material comprising a transparent support having thereon a masking layer and a...
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4105805 |
Formation of metal nitride oxide semiconductor (MNOS) by ion implantation of oxygen through a silicon nitride layer
A layer of silicon nitride (Si 3 N 4 ) is deposited on a silicon substrate. A mask provided with windows representing device structures is then formed over the silicon nitride layer. Oxygen is...
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4088799 |
Method of producing an electrical resistance device
The process by which this device is made comprises the implantation of ions into an insulator. Surface charge on the insulator is discharged during implantation by an electron beam or by a thin...
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4047975 |
Process for the production of a bipolar integrated circuit
A method of making a bipolar integrated circuit which requires neither an epitaxial layer nor a buried layer. The required doping of a semiconductor substrate, e.g., silicon, is obtained by a...
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4002546 |
Method for producing a magnetic recording medium
An improved method of making a magnetic recording medium with excellent coercive force and rectangular ratio is provided by means of an ion plating technique. A support and an evaporation source of...
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3983264 |
Metal-semiconductor ohmic contacts and methods of fabrication
Ohmic contacts to semiconductor surfaces are fabricated by a process which includes the formation of an adherent, uniform insulating film at the interface between the semiconductor surface and the...
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3922385 |
Solderable multilayer contact for silicon semiconductor
A multilayer solderable low resistance contact for N-type and P-type regions on a semiconductor body comprising an aluminum layer directly on the semiconductor body, and a nickel alloy layer on the...
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3645710 |
DIFFUSION TREATMENTS OF SELECTED BODY SURFACE PORTIONS BY ELECTRIC ARC
Method and apparatus for the controlled diffusion of ions from a gaseous medium into selected surface portions of a body by contacting such portions with a gaseous diffusion substance at least one...
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3622382 |
SEMICONDUCTOR ISOLATION STRUCTURE AND METHOD OF PRODUCING
A monocrystalline semiconductor body provided with a subsurface insulating layer. The layer is produced by bombarding the body with ions such as nitrogen, oxygen and carbon, for a time sufficient...
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3540925 |
ION BOMBARDMENT OF INSULATED GATE SEMICONDUCTOR DEVICES
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3449824 |
METHOD FOR PREPARING A FERROELECTRIC BODY AND DEVICES
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3442701 |
METHOD OF FABRICATING SEMICONDUCTOR CONTACTS
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3298863 |
Method for fabricating thin film transistors
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3294583 |
Process of coating a silicon semiconductor with indium using an ion beam
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3287243 |
Deposition of insulating films by cathode sputtering in an rf-supported discharge
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2776227 |
Method of processing a photosensitive mosaic electrode
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2553289 |
Method for depositing thin films
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2074281 |
Method and apparatus for the production of metallic coatings on electrically nonconducting substances by the thermal vaporization of metals in vacuo
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3704166 |
Title is not available
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3687722 |
Title is not available
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