Matches 201 - 250 out of 277 < 1 2 3 4 5 6 >
Match Document Document Title
4547432 Method of bonding silver to glass and mirrors produced according to this method  
A method for adhering silver to a glass substrate for producing mirrors includes attaining a silicon enriched substrate surface by reducing the oxygen therein in a vacuum and then vacuum depositing...
4540466 Method of fabricating semiconductor device by dry process utilizing photochemical reaction, and apparatus therefor  
Photochemical technique is applied, in a unique manner, to the so-called dry process intended for etching a substrate or for deposition thereon in the presence of a gas supplied into a chamber...
4532149 Method for producing hard-surfaced tools and machine components  
In one aspect, the invention comprises a method for producing tools and machine components having superhard crystalline-ceramic work surfaces. Broadly, the method comprises two steps: A tool or...
4532004 Method of manufacturing a semiconductor device  
A method of manufacturing a GaAs FET is disclosed. In this manufacturing method, a protection film is formed on a GaAs substrate and a dummy gate electrode is formed thereon. A channel length...
4522886 Method of ion beam synthesis of thin silicon nitride films and resulting articles  
A method is disclosed for the synthesis of ultra-thin silicon nitride (Si x N y ) films by the direct interaction of a low energy noble ion beam (e.g. Ar + or He + ), with NH 3 physically...
4521443 Integrated optical waveguide fabrication by ion implantation  
A method for fabricating optical waveguides and other optical devices. Nitrogen ions are implanted by ion bombardment in a substrate composed of silicon dioxide. Damage to the atomic structure...
4514437 Apparatus for plasma assisted evaporation of thin films and corresponding method of deposition  
An improved method of and apparatus for depositing thin films, such as indium tin oxide, onto substrates, which deposition comprises one step in the fabrication of electronic, semiconductor and...
4492716 Method of making non-crystalline semiconductor layer  
Substrates are disposed in a reaction chamber having a gas inlet and a gas outlet and a mixture gas containing at least a semiconductor material gas and a carrier gas is introduced into the...
4474827 Ion induced thin surface coating  
Thin film coatings comprising hydrocarbon polymers are deposited on and merged into a substrate by causing secondary ionically activated and electric field energized atomic or molecular ionic...
4466839 Implantation of an insulative layer  
Method for preparing electrically conductive layers on or in insulating layers, characterized by the feature that the conductivity of at least part of the insulating layer is increased by ion...
4465705 Method of making semiconductor devices  
A method of masking semiconductor devices provided with selectively formed oxide film patterns, can be made by very precisely copying from selective oxidation mask patterns. The method in...
4460412 Method of making magnetic bubble memory device by implanting hydrogen ions and annealing  
A method of implanting a magnetic garnet film with ions is disclosed in which a covering film is provided on a monocrystalline magnetic garnet film for magnetic bubbles, and hydrogen ions are...
4457950 Process for producing wiring circuit board  
A wiring circuit board with a fine wiring pattern free from disconnection and poor insulation is produced by forming an insulating layer consisting of at least two insulating substances having...
4456515 Method for making polarizers comprising a multiplicity of parallel electrically conductive strips on a glass carrier  
A method for producing polarizers, comprising a multiplicity of parallel electrically conductive strips on a glass carrier, having a raster measurement of approximately 1/10 of the light wave...
4452827 Method for surface modification of synthetic artificial and natural polymers and polymer compositions using metals, non-metals and gases  
A low energy electron beam of ions of an element to be imparted in polymeric material is formed and accelerated, the beam being subjected to electromagnetic separation so that only a high purity...
4452826 Use of polysilicon for smoothing of liquid crystal MOS displays  
In a liquid crystal imaging display comprising a liquid crystal layer formed over the top surface of a MOS integrated circuit, the reflectivity of the pixel control electrodes is enhanced by means...
4448797 Masking techniques in chemical vapor deposition  
Various mask configurations and techniques for their employment in a chemical vapor deposition system are disclosed. These masks can be utilized in the fabrication of semiconductor devices. The...
4443488 Plasma ion deposition process  
A plasma ion deposition process of large-grain, thin semiconductor films directly on low-cost amorphous substrates comprising ionizing a semiconductor-based gaseous compound in a chamber by an...
4441973 Method for preparing a thin film amorphous silicon having high reliability  
A semiconductor film is prepared by a method wherein a substrate is first disposed as one electrode within a reaction chamber. A supply of semiconductor material is fed into the reaction chamber as...
4440571 Process for the surface treatment of inorganic fibers for reinforcing titanium or nickel and product  
A process for the surface treatment of inorganic fibers for reinforcing titanium or nickel, comprising the steps of coating the surface of inorganic fibers with an aqueous or organic solvent...
4424104 Single axis combined ion and vapor source  
Combining an evaporation source and an ion beam source to provide a crucible anode surface, and heating that crucible anode surface to a high enough temperature to cause evaporation of anode...
4418094 Vertical-etch direct moat isolation process  
Direct Moat Isolation for VLSI integrated circuit structures is formed by growing oxide over the entire substrate area, and then cutting windows in the oxide, using an anisotropic polymer-free...
4411929 Method for manufacturing semiconductor device  
A method for manufacturing a semiconductor integrated circuit device having contact apertures with finely-controlled dimensions of 1 μm or less. An ion bombardment layer is formed by bombarding...
4409259 MOS Dynamic RAM cell and method of fabrication  
A high density CMOS dynamic RAM cell comprising a transistor and capacitance means formed in an n-well is disclosed. The capacitance means includes a polysilicon plate member disposed above a...
4407850 Profile control photoresist  
Anisotropic etching of thick photoresist under plasma conditions to achieve a vertical side wall with or without undercutting is accomplished by operating at a low excitation frequency, a pressure...
4402993 Process for coating optical fibers  
Vitreous optical fibers provided with hermetically sealed coatings applied by method and apparatus comprising; drawing a fiber directly from a fiber extruder into and through an elongated chamber...
4395433 Method for manufacturing a semiconductor device having regions of different thermal conductivity  
In gas phase growth of a polysilicon layer on a semiconductor substrate, a silicon layer of a single-crystal structure or a structure akin thereto may be formed only on an exposed surface of the...
4378417 Electrophotographic member with α-Si layers  
In an electrophotographic member employing an amorphous silicon photoconductive layer, a part which is at least 10 nm thick inwardly of the amorphous silicon layer from the surface (or interface)...
4377628 Electrophotographic member with α-Si and H  
Disclosed is an electrophotographic member having an amorphous-silicon photoconductive layer, wherein the distance between a portion in which light illuminating the photoconductor is absorbed...
RE31151 Inexpensive solar cell and method therefor  
Solar cells are manufactured by a simplified method in which a single protective layer acts as an anti-reflection coating and an encapsulation. In cases where the junction is formed by ion...
4372985 Ion implantation for hard bubble suppression  
A method for processing a magnetic bubble domain device for hard bubble suppression comprising the steps of providing a non-magnetic substrate; providing a thin layer of magnetic material capable...
4365107 Amorphous film solar cell  
An amorphous film solar cell of p-i-n heterojunction type, which is produced through the combination of group III-V compound amorphous semiconductor films with a layer of fluorinated or...
4365013 Electrophotographic member  
Disclosed is an electrophotographic member having at least a supporter and a photoconductor layer formed mainly of amorphous silicon, characterized in that the amorphous silicon contains at least...
4364731 Methods for producing adhesive bonds between substrate and polymer employing an intermediate oxide layer  
Methods and compositions are provided for enhancing the bonding of polymeric materials to substrates via silane coupling agents. The methods involve depositing an oxide layer, such as alumina or...
4351856 Semiconductor device and method of manufacturing the same  
A semiconductor device is disclosed wherein a polycrystalline film whose principal constituent is silicon is formed on an amorphous or polycrystalline substrate, the polycrystalline film having a...
4344980 Superior ohmic contacts to III-V semiconductor by virtue of double donor impurity  
A method for fabricating superior ohmic contacts in a III-V semiconductor wafer by virtue of double donor (or double acceptor) impurity complex formation. A typical III-V, e.g., GaAs, semiconductor...
4341569 Semiconductor on insulator laser process  
A beam of radiant energy such as a laser beam is applied to an epitaxial silicon island on a silicon on sapphire device before formation of overlying layers of oxide and metal. The energy beam...
4323590 Method for improving switch contacts, in particular for vacuum switches  
Method for improving switch contacts in particular enhancing the voltage endurance, lowering the chopper level and improving the electrical conductivity for the use in vacuum switches in which ions...
4315782 Method of making semiconductor device with passivated rectifying junctions having hydrogenated amorphous regions  
A device and method for forming the device formed of semiconductor material provides metallization for the circuit and passivation of a rectifying junction in but a single photolithographic etching...
4309812 Process for fabricating improved bipolar transistor utilizing selective etching  
Disclosed is a self-aligned process for providing an improved bipolar transistor structure. The process includes the chemically etching of an intermediate insulating layer to undercut another top...
4298629 Method for forming a nitride insulating film on a silicon semiconductor substrate surface by direct nitridation  
In a method for forming an insulating film on a semiconductor substrate surface, the silicon nitride of the insulating film has been formed by a plasma CVD or a direct nitridation. In the present...
4290844 Focal plane photo-detector mosaic array fabrication  
A focal plane detector mosaic array is formed by securing wafers of the detector material to a focal plane having individual conductor leads embedded therein, ion milling to delineate separate...
4281208 Photovoltaic device and method of manufacturing thereof  
A photovoltaic device comprises a light transmissive insulating substrate, on which a plurality of isolated transparent electrodes are formed. An amorphous silicon layer of a PIN structure, for...
4264642 Deposition of thin film organic coatings by ion implantation  
Thin film organic coatings of a polymeric nature are deposited on and merged into substrate surfaces by ion implantation of ionized organic monomers.
4262056 Ion-implanted multilayer optical interference filter  
A single or multilayer optical interference filter and method of forming filter by ion implantation. One or more layers of nitrogen ions are implanted into a single crystal silicon with the crystal...
4261650 Method for producing uniform parallel alignment in liquid crystal cells  
A method of treating the surface of substrates used in liquid crystal display cells so that the surface forces the liquid crystal director to be aligned uniformly over the entire surface and...
4260466 Method of producing magnetic recording medium  
A method of producing a magnetic recording layer on a support comprising simultaneously depositing a ferromagnetic material and a polymer on a support using a vapor deposition technique such as...
4253888 Pretreatment of photoresist masking layers resulting in higher temperature device processing  
Method for the production of an LSI circuit device, in which method an organic compound film such as photoresist films is suitably treated to become a heat resistant film and it is used in various...
4252579 Method for making single electrode U-MOSFET random access memory utilizing reactive ion etching and polycrystalline deposition  
A method for making highly dense, dielectrically isolated, U-shaped MOSFET. In a preferred method a monocrystalline silicon P substrate with a N+ layer thereon, a P layer on the N+ layer and a N+...
4227961 Process for forming a single-crystal film  
A process for forming a thin single-crystal film comprising the steps of heating and vaporizing a film material in a closed type crucible to form vapor of the film material, injecting the vapor...
Matches 201 - 250 out of 277 < 1 2 3 4 5 6 >