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7101795 Method and apparatus for depositing refractory metal layers employing sequential deposition techniques to form a nucleation layer  
A method and system to form a refractory metal layer on a substrate features nucleating a substrate using sequential deposition techniques in which the substrate is serially exposed to first and...
6986914 Metal nitride deposition by ALD with reduction pulse  
The present methods provide tools for growing conformal metal thin films, including metal nitride, metal carbide and metal nitride carbide thin films. In particular, methods are provided for...
6919102 Method of stabilizing material layer  
A method of stabilizing the properties of a material layer is disclosed. A plurality of wafers are stored in a FOUP and in sequence the wafers are transferred to a chamber to proceed with...
6884473 Method for fabricating metal silicide  
A method for fabricating a metal silicide layer includes forming a dielectric layer on a substrate, followed by forming a polysilicon material conductive layer on the dielectric layer. An adhesion...
6884466 Process for low-temperature metal-organic chemical vapor deposition of tungsten nitride and tungsten nitride films  
Processes for producing tungsten nitride and tungsten nitride films are provided in which a tungsten carbonyl compound and a nitrogen-containing reactant gas are reacted at a temperature below...
6838125 Method of film deposition using activated precursor gases  
A method for depositing a film on a substrate is provided. In one aspect, the method includes providing a metal-containing precursor to an activation zone, and activating the metal-containing...
6835417 Method and device for depositing thin layers via ALD/CVD processes in combination with rapid thermal processes  
The ALD process chamber has heating radiation sources and the process sequence includes rapid temperature changes on a substrate surface of a substrate arranged in the ALD process chamber. The...
6833161 Cyclical deposition of tungsten nitride for metal oxide gate electrode  
A method for depositing a tungsten nitride layer is provided. The method includes a cyclical process of alternately adsorbing a tungsten-containing compound and a nitrogen-containing compound on a...
6797340 Method for depositing refractory metal layers employing sequential deposition techniques  
A method for forming a tungsten layer on a substrate surface is provided. In one aspect, the method includes positioning the substrate surface in a processing chamber and exposing the substrate...
6797337 Method for delivering precursors  
A method and apparatus for delivering precursors to a chemical vapor deposition or atomic layer deposition chamber is provided. The apparatus includes a temperature-controlled vessel containing a...
6726955 Method of controlling the crystal structure of polycrystalline silicon  
A method of forming a polycrystalline silicon film comprising: providing a process gas mix comprising a silicon source gas and a dilution gas mix wherein the dilution gas mix comprises H2 and an...
6660342 Pulsed electromagnetic energy method for forming a film  
A method of forming a film by a plasma CVD process in which a high density plasma is generated in the presence of a magnetic field wherein the electric power for generating the plasma has a pulsed...
6641867 Methods for chemical vapor deposition of tungsten on silicon or dielectric  
In situ nitridation of a thin layer of either silicon or tungsten provides an adhesive layer for bulk deposition of tungsten. Alternatively, a thin layer of silicon can be deposited directly on a...
6623798 Chemical vapor deposition method for depositing silicide and apparatus for performing the same  
A chemical vapor deposition (CVD) method for depositing a suicide and a CVD system for performing the same are disclosed. A silicide is deposited on a substrate. Residual gases remaining from the...
6582757 Method for tungsten deposition without fluorine-contaminated silicon substrate  
A method for forming tungsten structures over silicon substrates, including the following steps. A silicon substrate is having a patterned dielectric layer formed thereon defining a tungsten...
6551929 Bifurcated deposition process for depositing refractory metal layers employing atomic layer deposition and chemical vapor deposition techniques  
A method and system to form a refractory metal layer on a substrate features a bifurcated deposition process that includes nucleating a substrate using ALD techniques to serially expose the...
6472076 Deposition of organosilsesquioxane films  
There is provided an array of alkyl substituted silsesquioxane thin film precursors having a structure wherein alkyl groups are bonded to the silicon atoms of a silsesquioxane cage. The alkyl...
6306765 Method for the formation of thin films for use as a semiconductor device  
A film formation method which comprises the steps of forming a high melting metal film on a substrate to cover an insulating pattern formed on the substrate therewith, and forming on the surface of...
6107152 Method of forming tungsten nitride comprising layers using NF.sub.3 as a nitrogen source gas  
Methods of forming tungsten-comprising layers are described. In one implementation, a substrate is provided having a surface over which a tungsten-comprising layer is to be formed. A gas plasma is...
6090706 Preconditioning process for treating deposition chamber prior to deposition of tungsten silicide coating on active substrates therein  
A process is disclosed for preconditioning surfaces of a tungsten silicide deposition chamber, after a previous step of cleaning the chamber, and prior to depositing tungsten silicide on active...
6066366 Method for depositing uniform tungsten layers by CVD  
Within wafer and wafer-to-wafer uniformity of W layers deposited by CVD, employing N 2 for increased reflectivity, is significantly improved by omitting N 2 during at least a portion of...
6040011 Substrate support member with a purge gas channel and pumping system  
The present invention discloses susceptor used in vacuum CVD chambers which provides a purge gas delivery and removal system that inhibits the deposition of process gas on the edge and back side of...
6022586 Method and apparatus for forming laminated thin films or layers  
Pre-coating films are formed in a pretreatment by supplying first film-forming gases into a process chamber of a process vessel while heating the process chamber so as to form a first pre-coating...
5997950 Substrate having uniform tungsten silicide film and method of manufacture  
A tungsten silicide film is deposited on a substrate from a premixed deposition gas mixture comprising: (i) silicon source gas, such as SiCl 2 H 2 and (ii) tungsten source gas, such as WF 6 . A...
5997949 Synthesis of W-Si-N films by chemical vapor deposition using WF.sub.6, SiH.sub.4 and NH.sub.3  
The present invention relates to the forming of amorphous or near-amorphous, ternary films of W-Si-N on substrates by chemical vapor deposition of WF 6 , SiH 4 and NH 3 and a carrier gas. The...
5981387 Method for forming silicide film in semiconductor device  
Disclosed is a method for forming a silicide film on bit lines or word lines in a semiconductor device. The method includes the steps of: placing a substrate within a reacting chamber, the...
5981366 Method for manufacturing non-volatile memory  
A method for forming a non-volatile memory having a floating gate electrode arranged therein. The floating gate electrode being formed by alternatingly laminating on a silicon substrate a...
5916634 Chemical vapor deposition of W-Si-N and W-B-N  
A method of depositing a ternary, refractory based thin film on a substrate by chemical vapor deposition employing precursor sources of tungsten comprising WF 6 , either silicon or boron, and...
5834372 Pretreatment of semiconductor substrate  
A method for pretreating a semiconductor surface, comprising the steps of: placing a titanium nitride substrate in a reaction chamber and subjecting the reaction chamber to vacuum; purging the...
5795824 Method for nucleation of CVD tungsten films  
A tungsten (W) film is formed on a surface of a semiconductor substrate by providing to that surface gas mixtures tailored for both reduced gas phase nucleation of particulates (GPN) and attack of...
5741547 Method for depositing a film of titanium nitride  
A method of depositing a film of titanium nitride on a substrate which includes, positioning the substrate within a chemical vapor deposition reactor chamber which is maintained at a predetermined...
5741546 Method of depositing titanium nitride films on semiconductor wafers  
A chemical vapor deposition method of providing a conformal layer of a titanium nitride atop a semiconductor wafer comprises: a) positioning a wafer within a chemical vapor deposition reactor; b)...
5695831 CVD method for forming a metallic film on a wafer  
A CVD method for forming a tungsten (W) film, by using a metallic halide (WF 6 ) as a source gas, on a barrier metallic film containing titanium (Ti). The method includes providing to the edge...
5681613 Filtering technique for CVD chamber process gases  
A method for filtering process gases prior to said process gases being allowed to enter a CVD chamber is provided in order to ensure high purity of the process gases. In one embodiment, the process...
5679405 Method for preventing substrate backside deposition during a chemical vapor deposition operation  
A suitable inert thermal gas such as argon is introduced onto the backside of wafers being processed in a CVD reactor during the deposition of tungsten or other metals and silicides, to avoid...
5643633 Uniform tungsten silicide films produced by chemical vapor depostiton  
A tungsten silicide film is deposited from WF 6 and SiCl 2 H 2 onto a substrate so that the tungsten to silicon ratio is substantially uniform through the thickness of the WSi x film, and the...
5565382 Process for forming tungsten silicide on semiconductor wafer using dichlorosilane gas  
A process and is described for forming a tungsten silicide layer on a semiconductor wafer in a deposition chamber which comprises mounting a wafer on a susceptor having a fixed outer diameter...
5514425 Method of forming a thin film  
A thin film-forming method according to the present invention is characterized by comprising the steps of introducing TiCl 4 , hydrogen, nitrogen and NF 3 into a film-forming chamber containing a...
5510297 Process for uniform deposition of tungsten silicide on semiconductor wafers by treatment of susceptor having aluminum nitride surface thereon with tungsten silicide after cleaning of susceptor  
Disclosed is a process for the formation of a tungsten silicide layer on an integrated circuit structure of a semiconductor wafer mounted on a susceptor in a vacuum chamber, wherein the tungsten...
5482749 Pretreatment process for treating aluminum-bearing surfaces of deposition chamber prior to deposition of tungsten silicide coating on substrate therein  
A process is disclosed for pretreating aluminum-bearing surfaces in a vacuum deposition chamber after a previous step of cleaning the chamber, and prior to depositing tungsten silicide on...
5436200 Blanket tungsten deposition  
A blanket tungsten deposition apparatus comprises a reactor the inside of which is evacuatable, a gas inlet means for introducing a reaction gas into the reactor, mount means for mounting an object...
5433975 Deposition of tungsten films from mixtures of tungsten hexafluoride organohydrosilanes and hydrogen  
A method of depositing tungsten films comprising heating a substrate to a temperature above 200° C. in a chemical vapor deposition reactor, flowing a stream of carrier gas over the substrate in...
5429991 Method of forming thin film for semiconductor device  
A method of forming a thin film for a semiconductor device, for forming a metal thin film by chemical vapor deposition on an intermediate layer which is provided on a substrate, comprises the steps...
5407698 Deposition of tungsten  
A method is provided for low pressure chemical deposition of tungsten and tungsten metallization for defining interconnects for an integrated circuit. A surface layer of tungsten is provided which...
5393565 Method for deposition of a refractory metal nitride and method for formation of a conductive film containing a refractory metal nitride  
A refractory metal nitride is deposited at a temperature of 600° C. according to a chemical vapor phase deposition method by using a source gas containing a refractory metallic element and a...
5385751 Atmospheric pressure CVD process for preparing fluorine-doped tungsten oxide films  
A film of fluorine-doped tungsten oxide is provided on a substrate by reacting together tungsten alkoxide, an oxygen-containing compound, and a fluorine-containing compound.
5356659 Metallization for semiconductor devices  
A low temperature chemical vapor deposition process is used to encapsulate aluminum conductors on the surface of a silicon substrate to form bimetallic conductors. The refractory material is...
5352490 Method of chemical vapor deposition in a continuous treatment line  
A reaction gas or a gas containing a reaction gas is blown through blowing nozzles onto a steel material in a chemical vapor deposition treating chamber at a velocity sufficient to forcibly remove...
5352489 Method for manufacturing a rotary anode for X-ray tube  
A method for manufacturing a rotary anode for use in an X-ray tube is proposed. The method has the step of forming, on a graphite substrate plate, an intermediate layer of rhenium by subjecting a...
5328715 Process for making metallized vias in diamond substrates  
A process for making metallized vias in diamond substrates is disclosed. The process involves laser-drilling a plurality of holes in a CVD diamond substrate and depositing tungsten, or a similar...
Matches 1 - 50 out of 71 1 2 >