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7615202 Method for producing high purity silicon  
An object of the invention is to provide a method for producing a large amount of inexpensive high purity silicon useful for a solar battery. Disclosed is a method for producing high purity silicon...
7597756 Device and method for the production of monocrystalline or multicrystalline materials, in particular multicrystalline silicon  
The method of producing monocrystalline or multicrystalline blanks, especially silicon blanks, by using a vertical-gradient-freeze method, includes providing a crucible with a rectangular or...
7569716 Method of selecting silicon having improved performance  
Chemical grade silicon metalloid having improved performance in the direct process for making organohalosilanes is selected by (A) measuring the temperature of each batch of silicon metalloid...
7563319 Manufacturing method of silicon wafer  
An active layer side silicon wafer is heat-treated in an oxidizing atmosphere to thereby form a buried oxide film therein. The active layer side silicon wafer is then bonded to a supporting side...
7560085 Porous silicon particles  
Porous silicon particles are prepared from a metallurgical grade silicon powder having an initial particle size greater than about 1 micron is presented. Each porous silicon particle comprises a...
7538044 Process for producing high-purity silicon and apparatus  
When high purity silicon is produced through a gas-phase reaction between silicon tetra-chloride and zinc in a reaction furnace, the produce silicon is obtained as block or molten state. after the...
7531155 Method of producing silicon nanoparticles from stain-etched silicon powder  
The present invention is for a porous silicon powder comprising silicon particles wherein the outermost layers of said particles are porous. The present invention is also directed to a method of...
7455822 Method for production of silicon  
A process for production of Si, characterized by adding an oxide, hydroxide, carbonate or fluoride of an alkali metal element, or an oxide, hydroxide, carbonate or fluoride of an alkaline earth...
7429369 Silicon nanoparticle nanotubes and method for making the same  
A relatively thick electrode is positioned opposite the surface of a substrate/second electrode. The electrode and the substrate surface are both contacted by a solution including silicon...
7404941 Medium purity metallurgical silicon and method for preparing same  
The invention concerns a method for producing a medium purity silicon comprising: preparing, by carbothermic reduction of silica in a submerged arc-furnace a silicon with low boron content;...
7332441 Passivation of porous semiconductors  
A method is disclosed for stabilizing porous silicon. A porous silicon structure having a surface terminated with hydrogen atoms is subjected to organic thermal processing to substitute the...
7294324 Low basal plane dislocation bulk grown SiC wafers  
A high quality single crystal wafer of SiC is disclosed. The wafer has a diameter of at least about 3 inches (75 mm) and at least one continuous square inch (6.25 cm 2 ) of surface area that has a...
7273647 Silicon annealed wafer and silicon epitaxial wafer  
A silicon annealed wafer having a sufficient thick layer free from COP defects on the surface, and a sufficient uniform BMD density in the inside can be produced by annealing either a base material...
7214267 Silicon single crystal and method for growing silicon single crystal  
A silicon single crystal and a method for growing a silicon single crystal are provided. A p-type silicon single crystal is grown with a uniform resistivity value in a pulling direction. Pulling is...
7125608 Single-crystal silicon ingot and wafer having homogeneous vacancy defects, and method and apparatus for making same  
The present invention improves upon the Czochralski method for growing a single-crystal silicon ingot and provides a high quality silicon wafer having an oxide layer with superior...
7060355 Polycrystalline silicon rod and method of processing the same  
A polycrystalline silicon rod according to present invention has a structure for hanging of polycrystalline silicon rods to each other end-to-end, so that the efficiency of melting polycrystalline...
7029644 Method for producing a polycrystalline silicon, polycrystalline silicon and solar cell  
Silicon raw material and gallium dopant are charged and mixed in a crucible. The silicon raw material is heated to a predetermined temperature, and melted under an inactive gas atmosphere. The...
7001579 Method for producing highly purified, granular silicium  
The invention relates to a method for producing granular silicon by thermal decomposition of a gas containing silicon in a fluidized bed, said decomposition occurring in the presence of...
7001578 Family of discretely sized silicon nanoparticles and method for producing the same  
A family of discrete and uniformly sized silicon nanoparticles, including 1 (blue emitting), 1.67 (green emitting), 2.15 (yellow emitting), 2.9 (red emitting) and 3.7 nm (infrared emitting)...
6994835 Silicon continuous casting method  
The present invention reduces temperature gradient in the direction of the radius of solidified ingots of silicon immediately after solidification, which has serious influences on the quality as a...
6953559 Method for producing highly pure, granular silicon  
The invention relates to a method for producing highly pure, granular silicon by decomposing a gas containing silicon in a procedure comprising at least two operating states, at least one state...
6951637 Method and device for producing globular grains of high-puroty silicon having a diameter of between 50 μm and 300 μm and use of the same  
The invention relates to a method and a device for producing globular grains of high-purity silicon by atomising a silicon melt ( 6 ) in an ultrasonic field ( 10 ). Globular grains having a grain...
6946029 Sheet manufacturing method, sheet, sheet manufacturing apparatus, and solar cell  
An inexpensive sheet with excellent evenness and a desired uniform thickness can be obtained by cooling a base having protrusions, dipping the surfaces of the protrusions of the cooled base into a...
6926876 Plasma production of polycrystalline silicon  
The invention is directed to a method of producing polycrystaline silicon metal from a silicon halide plasma source. The silicon halide is split into silicon and halide ions in an inductively...
6905771 Silicon wafer  
A silicon wafer is doped with boron and germanium in a range that satisfies a relational expression defined by: −0.8×10 −3 ≦4.64×10 −24 ×[Ge]−2.69×10 −23 ×[B]≦1.5×10 −3 . This...
6887448 Method for production of high purity silicon  
The invention relates to a method for the production of high purity silicon, characterized by the following steps: a) reaction of metallic silicon with silicon tetrachloride (SiCl 4 ), hydrogen (H...
6878451 Silicon single crystal, silicon wafer, and epitaxial wafer  
There are provided silicon single crystal, silicon wafer, and epitaxial wafer having a sufficient gettering effect suitable for a large-scale integrated device. The silicon single crystal which is...
6861144 Polycrystalline silicon and process and apparatus for producing the same  
Foamed polycrystalline silicon having bubbles therein and an apparent density of 2.20 g/cm 3 or less. This silicon generates an extremely small amount of fine grains by crushing and can be easily...
6861040 Refining of metallurgical grade silicon  
The invention relates to a method for purification of metallurgical grade silicon where a calcium containing compound is added to molten silicon prior to or after the silicon is tapped from the...
6858307 Method for the production of low defect density silicon  
A process for the preparation of a silicon single ingot in accordance with the Czochralski method. The process for growing the single crystal silicon ingot comprises controlling (i) a growth...
6849244 Method for producing highly-pure granular silicon  
The invention relates to a method for producing hyper-pure, granular silicon by decomposing a gas containing silicon in a reactor consisting of a silicon carbide-based, carbon-fiber reinforced...
6846474 Silicon nanoparticle and method for producing the same  
Highly uniform 1 nm silicon nanoparticles are provided by the invention. The nanoparticles exhibit beneficial properties. They are a source of stimulated emissions. They may be suspended in...
6840998 Silicon single crystal produced by crucible-free float zone pulling  
A silicon single crystal is produced by crucible-free float zone pulling, has a diameter of at least 200 mm over a length of at least 200 mm and is free of dislocations in the region of this...
6818197 Epitaxial wafer  
A wafer of the invention is a silicon wafer of 0.02 Ωcm or less in resistivity for deposition of an epitaxial layer, and the number of crystal originated particles (COP) and the number of...
6815605 Silicon single crystal and wafer doped with gallium and method for producing them  
There can be provided according to the present invention a silicon single crystal produced according to Czochralski method to which Ga (gallium) is added as a dopant characterized in that a...
6808781 Silicon wafers with stabilized oxygen precipitate nucleation centers and process for making the same  
A silicon wafer having a controlled oxygen precipitation behavior such that a denuded zone extending inward from the front surface and oxygen precipitates in the wafer bulk sufficient for intrinsic...
6794265 Methods of forming quantum dots of Group IV semiconductor materials  
The invention relates to a method of forming a quantum dot. A particle that includes a semiconductor material Y selected from the group consisting of Si and Ge is provided. Sound energy and light...
6749824 Chemical vapor deposition system for polycrystalline silicon rod production  
Disclosed are processes and reactor apparatus for rapidly producing large diameter, high-purity polycrystalline silicon rods for semiconductor applications. A.C. current, having a fixed or variable...
6743495 Thermal annealing process for producing silicon wafers with improved surface characteristics  
A process for manufacturing silicon wafers that reduces the size of silicon wafer surface and/or sub-surface defects without the forming excessive haze. The process entails cleaning the front...
6723421 Semiconductor with coordinatively irregular structures  
A non-single crystalline semiconductor material includes coordinatively irregular structures characterized by distorted chemical bonding, reduced dimensionality and novel electronic properties. A...
6676916 Method for inducing controlled cleavage of polycrystalline silicon rod  
To avoid problems associated with the formation of unwanted cracks and spalls during the growth of a polycrystalline silicon rod, a flaw is induced in a filament on which silicon will be deposited...
6670036 Silicon seed crystal and method for producing silicon single crystal  
There are disclosed a silicon seed crystal which is composed of silicon single crystal and used for the Czochralski method, wherein oxygen concentration in the seed crystal is 15 ppma (JEIDA) or...
6645454 System and method for regulating lateral growth in laser irradiated silicon films  
A method is provided for maintaining a planar surface as crystal grains are laterally grown in the fabrication of crystallized silicon films. The method comprises: forming a film of amorphous...
6638491 Method of producing silicon metal particulates of reduced average particle size  
A method and apparatus of reducing the average particle size of silicon metal particulates employing a liquid oxidant extractant admixed with the silicon metal particulates while the silicon metal...
6632413 Method for purifying silicon  
A method of purifying silicon, comprising feeding a sparging gas into a liquid melt [ 10 ] containing molten silicon and at least one impurity, in which the sparging gas is used to react with or...
6623801 Method of producing high-purity polycrystalline silicon  
In producing rod-form high-purity polycrystalline silicon by depositing silicon on a silicon core by the thermal decomposition of a silane gas, the occurrence of defects near the interface of the...
6605150 Low defect density regions of self-interstitial dominated silicon  
The present invention relates to a single crystal silicon, in wafer and ingot form, which contains an axially symmetric region which is free of agglomerated intrinsic point defects. The region...
6599603 Silicon wafer  
The present invention provides a CZ silicon wafer, wherein the wafer includes rod-like void defects and/or plate-like void defects inside thereof, and a CZ silicon wafer, wherein the silicon wafer...
6586068 Ideal oxygen precipitating silicon wafer having an asymmetrical vacancy concentration profile and a process for the preparation thereof  
A process for heat-treating a single crystal silicon wafer to influence the precipitation behavior of oxygen in the wafer in a subsequent thermal processing step. The wafer has a front surface, a...
6585947 Method for producing silicon nanoparticles  
A method for producing the silicon nanoparticle of the invention is a gradual advancing electrochemical etch of bulk silicon. Separation of nanoparticles from the surface of the silicon may also be...
Matches 1 - 50 out of 240 1 2 3 4 5 >