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7521034 3C-SiC nanowhisker  
3C-SiC nanowhisker and a method of synthesizing 3C-SiC nanowhisker wherein its diameter and length can be controlled. The method is safe and low cost, and the whisker can emit visible light of...
7479265 Catalytic filter based on silicon carbide (β-SiC) for combustion of soot derived from exhaust gases from an internal combustion engine  
This invention relates to β-SiC foam parts with a specific surface area preferably equal to at least 5 m 2 /g and with at least two zones A and B with a different cellular porosity distribution,...
7438884 Silicon carbide with high thermal conductivity  
A chemical vapor deposited, β phase polycrystalline silicon carbide having a high thermal conductivity and reduced stacking faults. The silicon carbide is synthesized under specific conditions...
7393514 Carbide nanofibrils and method of making same  
A plurality of carbide, such as silicon carbide, tungsten carbide, etc., nanofibrils predominantly having diameters substantially less than about 100 nm and a method for making such carbide...
7083771 Process for producing silicon carbide fibers essentially devoid of whiskers  
Method for producing silicon carbide fibers by mixing discontinuous isotropic carbon fibers with a silica source and exposing the mixture to a temperature of from about 1450° C. to about 1800° C....
7041266 Silicon carbide fibers essentially devoid of whiskers and products made therefrom  
Silicon carbide fibers are produced by mixing discontinuous isotropic carbon fibers with a silica source and exposing the mixture to a temperature of from about 1450° C. to about 1800° C. The...
7029643 Silicon carbide powder and method for producing the same  
A method of producing a silicon carbide powder comprising sintering a mixture containing at least a silicon source and a carbon source wherein the carbon source is a xylene-based resin. Preferable...
6863759 Methods for making composite bonded structures  
Techniques to bond two or more smaller bodies or subunits to produce a unitary SiC composite structure extend the capabilities of reaction-bonded silicon carbide, for example, by making possible...
6861038 Ceramics and method of producing ceramics  
A method of continuously producing a non-oxide ceramic formed of a metal constituent and a non-metal constituent. A salt of the metal constituent and a compound of the non-metal constituent and a...
6767523 Whisker-free silicon carbide fibers  
Method for producing discontinuous silicon carbide fibers, useful as heating elements in a low-energy microwave field, from discontinuous carbonized cotton fibers employing an admixture of...
6534026 Low defect density silicon carbide  
A low defect (e.g., dislocation and micropipe) density silicon carbide (SiC) is provided as well as an apparatus and method for growing the same. The SiC crystal, grown using sublimation...
6514395 Nanostructure-based high energy capacity material  
A nanostructure based material is capable of accepting-and reacting with an alkali metal such as lithium. The material exhibits a reversible capacity ranging from at least approximately 900...
6436361 Silicon carbide and process for its production  
Silicon carbide having a resistivity of from 10 3 to 10 6 Ω·cm and a powder X-ray diffraction peak intensity ratio of at least 0.005 as represented by I d1 /I d2 where I d1 is the peak...
6251353 Production method of silicon carbide particles  
The present invention is to provide a production method of silicon carbide particles of high quality without generating a sulfur compound in the carbonizing and baking processes. More concretely, a...
6133120 Boron-doped p-type single crystal silicon carbide semiconductor and process for preparing same  
A p-type silicon carbide semiconductor having a high carrier concentration and activation rate is provided by doping boron as an acceptor impurity in a single crystal silicon carbide. The boron...
5997832 Preparation of carbide nanorods  
A process utilizing a supported metal catalyst, a volatile species source, and a carbon source has been developed to produce carbide nanorods with diameters of less than about 100 nm and aspect...
5993770 Silicon carbide fabrication  
An SiC film having an excellent strength and thermal characteristics. The SiC film is prepared by a CVD process (i.e. CVD-SiC fabrication) and has a thermal conductivity along the direction of the...
5922300 Process for producing silicon carbide fibers  
A process for producing silicon carbide fibers is provided, comprising the steps of mixing a silicon supply source powder including a mixture of silicon powder and silicon dioxide powder having a...
5876683 Combustion flame synthesis of nanophase materials  
A low pressure combustion flame method for the production of nanophase powders, coatings and free-standing forms. The process involves controlled thermal decomposition of one or more metalorganic...
5803947 Method of producing metallic magnesium, magnesium oxide or a refractory material  
Metallic magnesium and pure magnesium oxide are produced by carbothermal reduction of starting materials such as magnesium oxide containing minor amounts of oxides of Fe, Si, Ca and Al, and/or...
5676918 Method of producing silicon carbide fibers  
Silicon carbide fibers having a high mechanical strength at a high temperature, an excellent heat resistance and a uniform structure are produced by activating carbon fibers which have been...
5656213 Process for the production of carbon-filled ceramic composite material  
A process for producing a carbon-filled ceramic composite material comprising a ceramic matrix and a carbon domain dispersed therein with a carbon domain diameter of from 0.01 to 30 μm and a...
5618510 Process for producing silicon carbide material  
A silicon carbide material in the form of fibers, sheets or three-dimensionally structured articles useful as a reinforcing material and heat-insulating material, is produced by reacting an...
5614162 Process for the production of long fibrous silicon carbide whiskers  
The production of SiC whiskers and of mats thereof on a substrate by treatment, at 1250° to 1500° C., of a gaseous mixture including hydrogen and sources of Si and C atoms which are in the form...
5436207 Process for preparing silicon carbide powder from vaporized polysiloxanes  
Disclosed is a process for the formation of silicon carbide powder in which vaporized polysiloxanes are reacted and pyrolyzed in a single heating step to form the silicon carbide powder. The...
5427761 Process for the production of metal carbides having a large specific surface under atmospheric pressure inert gas scavenging  
A process for the production of a metal carbide having a BET specific surface area of 10 to 200 m 2 /g, in which a reaction mixture including carbon having a specific surface area of at least 200...
5404836 Method and apparatus for continuous controlled production of single crystal whiskers  
Described herein is a method and apparatus for continuously growing single crystal whiskers of silicon carbide, silicon nitride, boron carbide and boron nitride by the VLS process under controlled...
5374412 Highly polishable, highly thermally conductive silicon carbide  
Silicon carbide is produced by chemical vapor deposition at temperatures from 1340°-1380° C., deposition chamber pressures of 180-200 torr, H 2 /methyltrichlorosilane ratio of 4-10 and...
5366713 Method of forming p-type silicon carbide  
A method of forming p-type silicon carbide which comprises using reactive source gases comprising silane, hydrogen, trimethylboron, and either diborane or boron trifluoride, to thereby attain a...
5348718 Method and apparatus for producing carbride products  
A method and apparatus are provided for producing a product comprising a carbide compound, such as for example silicon carbide. A reactor is provided which has a chamber defined therein which is...
5340417 Process for preparing silicon carbide by carbothermal reduction  
A process for preparing silicon carbide by carbothermal reduction is disclosed. This process involves rapidly heating a particulate reactive mixture of a silica source and a carbon source to form a...
5302366 Production of silicon product containing both carbon and nitrogen  
A ceramic product comprising both carbon and nitrogen and a method for its production are provided. The product is formed in a reactor having a chamber defined therein which is divided into a...
5250278 Method for producing a ceramic product  
A method of producing a composite ceramic powder is provided herein. A precursor product powder is first produced in a reactor from at least one carbide-forming reactant by heating the reactant(s)...
5248483 Apparatus and methods for producing ceramic products  
An apparatus and methods are provided for producing ceramic products in a reactor so as to minimize deposits therein. The reactor has a chamber defined therein which is divided into a combustion...
5248385 Process for the homoepitaxial growth of single-crystal silicon carbide films on silicon carbide wafers  
The invention is a method for growing homoepitaxial films of SiC on low-tilt-angle vicinal (0001) SiC wafers. The invention proposes and teaches a new theoretical model for the homoepitaxial growth...
5242479 Apparatus and method for producing carbide coatings  
This invention relates to a method and apparatus for developing a metallic carbide coating on a substrate. The invention involves providing an enclosed chamber with sources of carbon in the form of...
5230768 Method for the production of SiC single crystals by using a specific substrate crystal orientation  
There is provided a method for the production of a silicon carbide single crystal, which includes the steps of: providing a silicon single-crystal substrate having a growth plane with a crystal...
5202105 Method for making hexagonal silicon carbide platelets with the addition of a growth additive  
Crystalline silicon carbide wherein at least 90 weight percent of the silicon carbide is formed from a plurality of hexagonal crystal lattices wherein at least 80 weight percent of the crystals...
5178847 Process for producing ceramic raw materials  
The invention relates to a process for the production of silicon ceramic whiskers and silicon ceramic powder from silicon fluoride and ammonia or a hydrocarbon, at an elevated temperature....
5165916 Method for producing carbide products  
A method is provided for producing a carbide compound, such as silicon carbide. A reactor is provided which has a chamber defined therein which is divided into a combustion zone and a reaction...
5116679 Process for producing fibres composed of or coated with carbides or nitrides  
A process for producing fibres composed of or coated with carbides or nitrides. The process involves forming a first reaction zone containing microfine particles of an oxide (or oxide precursor) of...
5108729 Production of carbide products  
A method and apparatus are provided for producing a product comprising a carbide compound, such as for example silicon carbide. A reactor is provided which has a chamber defined therein which is...
5093039 Highly pure sintered carbide with high electric conductivity and process of producing the same  
Disclosed is an electrically conductive sintered silicon carbide body having an electric resistivity of not higher than 1 Ωcm, which is produced by (a) mixing (1) a first silicon carbide...
5087433 Method and apparatus for the production of SiC whisker  
In the production of SiC whisker for composite materials such as FRP, FRM, FRC and the like by vapor phase synthesis between silicon sulfide and carbon compound, SiC whisker suitable for the...
5039501 Method for growing silicon carbide whiskers  
Method for rapidly growing silicon carbide whiskers having high aspect ratios comprising heating a carbon substrate to between about 1600° C. and 1800° C. and thereat contacting the substrate...
5021230 Method of making silicon carbide  
A process for production of high purity, sub-micron size, silicon carbide by reacting a mixture of silica powder and carbon powder in a mixing reactor. The reactor, initially pressurized with a...
4981668 Silicon carbide as a raw material for silicon production  
What is described is a process for the production of silicon via the carbothermic reduction of silicon dioxide in which silicon carbide is fed as the total reductant source or as a portion of the...
4981666 Method for the preparation of silicon carbide whiskers  
In place of the conventional silicon source materials used in the prior art method for the preparation of silicon carbide whiskers, the inventive method utilizes a hydrolysis product of a...
4975392 Method for manufacturing silicon carbide whisker  
A method for manufacturing silicon carbide whisker which has a cross-sectional diameter of greater than about 1 μm by mixing a source of silicon atom in the form of grains having a mean grain...
4917866 Production process of silicon carbide short fibers  
A process for producing silicon carbide short fibers comprises oxidizing metallic silicon powder in an oxidizing gas atmosphere into silicon monoxide in the form of ultrafine particles or gas, and...
Matches 1 - 50 out of 128 1 2 3 >