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9011811 Method of producing silicon carbide  
A method of producing silicon carbide is provided. The method includes heating a cured product of a curable silicone composition in a non-oxidizing atmosphere at a temperature exceeding 1,500° C....
8980445 One hundred millimeter SiC crystal grown on off-axis seed  
A semiconductor crystal and associated growth method are disclosed. The crystal includes a seed portion and a growth portion on the seed portion. The seed portion and the growth portion form a...
8951638 Silicon carbide powder for producing silicon carbide single crystal and a method for producing the same  
A silicon carbide powder for the production of a silicon carbide single crystal has an average particle diameter of 100 μm or more and 700 μm or less and a specific surface area of 0.05 m2/g or...
8920761 Method for producing high purity silicon  
The present invention relates to a method for producing high purity silicon comprising providing molten silicon containing 1-10% by weight of calcium, casting the molten silicon, crushing the...
8916122 Method of producing alkoxysilanes and precipitated silicas from biogenic silicas  
A method of producing alkoxysilanes and precipitated silicas from biogenic silicas is provided. In a first step, biogenically concentrated silica is mixed with a liquid polyol to obtain a mixture,...
8906498 Sandwich of impact resistant material  
A method of making a sandwich of impact resistant material, the method comprising: providing a powder; performing a spark plasma sintering process on powder to form a tile; and coupling a ductile...
8859931 Plasma synthesis of nanopowders  
A process and apparatus for preparing a nanopowder are presented. The process comprises feeding a reactant material into a plasma reactor in which is generated a plasma flow having a temperature...
8795624 Monocrystalline silicon carbide ingot, monocrystalline silicon carbide wafer and method of manufacturing the same  
Provided is a monocrystalline silicon carbide ingot containing a dopant element, wherein a maximum concentration of the dopant element is less than 5×1017 atoms/cm3 and the maximum concentration...
8765091 Method to manufacture large uniform ingots of silicon carbide by sublimation/condensation processes  
This invention relates to a method for the manufacture of monolithic ingot of silicon carbide comprising: i) introducing a mixture comprising polysilicon metal chips and carbon powder into a...
8734751 Method and apparatus for recycling and treating wastes of silicon wafer cutting and polishing processes  
A method is provided for recycling and treating the wastes of silicon wafer cutting and polishing processes. To begin with, a dewatered filter cake is mixed with water so that the filter cake is...
8715604 Method for production of silicon carbide powder  
A liquid mixture is prepared by using a liquid phenolic resin (PL-2818) serving as a carbon source. While an inert gas is introduced into the liquid mixture, a released gas is discharged. Then,...
8685357 Firing support for ceramics and method for obtaining same  
The invention relates to a firing support for ceramics formed from a carbon substrate at least partially covered by a coating based on silicon carbide (SiC), said coating additionally adhering to...
8673053 Method of hardening an interface of carbon material using nano silicon carbide coating  
Disclosed is a method for hardening an interface of a carbon material by using nano silicon carbide coating. A carbon material-aluminum composite prepared by the disclosed method is light in...
8673254 Monocrystalline silicon carbide ingot, monocrystalline silicon carbide wafer and method of manufacturing the same  
Provided is a monocrystalline silicon carbide ingot containing a dopant element, wherein a maximum concentration of the dopant element is less than 5×1017 atoms/cm3 and the maximum concentration...
8677244 Exclusive operation control apparatus and method  
Provided is an exclusive operation control apparatus which, when input operations of a plurality of users compete with each other, displays a content on which the plurality of input operations are...
8658118 High purity crystalline silicon, high purity silicon tetrachloride for processes for producing the same  
An object of the present invention is to provide more inexpensive high purity crystalline silicon which can satisfy not only a quality required to a raw material of silicon for a solar cell but...
8642153 Single crystal silicon carbide substrate and method of manufacturing the same  
A single crystal silicon carbide substrate has a 4H-polytype crystal structure, has with nitrogen atoms doped as a conduction impurity with an atomic concentration of more than 1×1016/cm3, and has...
8617505 Method of producing silicon carbide  
A method of producing silicon carbide is provided. The method includes heating a cured product of a curable silicone composition in a non-oxidizing atmosphere at a temperature exceeding 1,500° C....
8574528 Methods of growing a silicon carbide epitaxial layer on a substrate to increase and control carrier lifetime  
A method of growing an epitaxial layer on a substrate is generally provided. According to the method, the substrate is heated in a chemical vapor deposition chamber to a growth temperature in the...
8574419 Chemical reactor with nanometric superstructure  
The invention relates to a chemical reactor with a nanometric superstructure, comprising at least one member wherein at least one reaction chamber is arranged, and said reaction chamber being...
8574529 Silicon carbide crystal and method of manufacturing silicon carbide crystal  
An SiC crystal has Fe concentration not higher than 0.1 ppm and Al concentration not higher than 100 ppm. A method of manufacturing an SiC crystal includes the following steps. SiC powders for...
8574527 Process for aftertreating carbon black  
The invention relates to a process for aftertreating carbon black, wherein the carbon black is subjected to a carrier gas flow in a fluidized bed apparatus in the lower region of the apparatus, an...
8536080 Boron carbide ceramic fibers  
A metal carbide ceramic fiber having improved mechanical properties and characteristics and improved processes and chemical routes for manufacturing metal carbide ceramic fiber. Metal carbide...
8507922 Silicon carbide substrate, semiconductor device, and SOI wafer  
Disclosed is a silicon carbide substrate which has less high frequency loss and excellent heat dissipating characteristics. The silicon carbide substrate (S) is provided with a first silicon...
8470279 High purity silicon-containing products and method of manufacture  
Silicon-containing products, such as silicon, silicon carbide and silicon nitride, containing less than 0.01 weight percent total mineral impurities and selectively determined carbon-to-silicon...
8465719 Silicon carbide substrate, semiconductor device, wiring substrate, and silicon carbide manufacturing method  
A silicon carbide substrate has a high-frequency loss equal to or less than 2.0 dB/mm at 20 GHz is effective to mount and operate electronic components. The silicon carbide substrate is heated at...
8367031 Silane compositions, methods of making the same, method for forming a semiconducting and/or silicon-containing film, and thin film structures formed therefrom  
A method of making hydrogenated Group IVA compounds having reduced metal-based impurities, compositions and inks including such Group IVA compounds, and methods for forming a semiconductor thin...
8354088 Methods and apparatus for recovery of silicon and silicon carbide from spent wafer-sawing slurry  
Methods, systems, and apparatus are disclosed herein for recovery of high-purity silicon, silicon carbide and PEG from a slurry produced during a wafer cutting process. A silicon-containing...
8313720 Guided diameter SiC sublimation growth with multi-layer growth guide  
In the growth of a SiC boule, a growth guide is provided inside of a growth crucible that is charged with SiC source material at a bottom of the crucible and a SiC seed crystal at a top of the...
8313721 Lithium-oxygen (AIR) electrochemical cells and batteries  
This invention provides a lithium-oxygen or lithium-air electrochemical cell comprising a negative electrode, an electrolyte, and a porous activated positive electrode comprising lithium-rich...
8293667 Sintered ceramic, slide part therefrom, and process for producing sintered ceramic  
It is an object of the invention to provide a ceramic sintered body that has a dense structure and minimal cracking and that exhibits excellent sliding properties even in a non-lubricated state,...
8231725 Semiconductor wafers of silicon and method for their production  
Semiconductor wafers of silicon are produced by pulling a single crystal growing on a phase boundary from a melt contained in a crucible and cutting of semiconductor wafers therefrom, wherein...
8222171 Method for the production of a ceramic substrate, and a ceramic substrate  
A method for the production of a ceramic substrate for a semiconductor component, includes the steps of producing paper containing at least cellulose fibers, as well as a filler to be carbonized...
8147789 Composition comprising neopentasilane and method of preparing same  
A composition comprising at least 93% (w/w) neopentasilane; and a method of preparing neopentasilane, the method comprising treating a tetrakis-(trihalosilyl)silane with diisobutylaluminum hydride.
8129300 Porous, fired ceramic foam  
The invention relates to a porous, fired ceramic foam having a total porosity of between 50 and 92% and an intergranular porosity of at least 5%. In particular, the invention relates to a...
8110167 Nanowire synthesis from vapor and solid sources  
Methods of the present invention can be used to synthesize nanowires with controllable compositions and/or with multiple elements. The methods can include coating solid powder granules, which...
8048822 Method for making silicon-containing products  
A method for producing carbon-silica products from silica-containing plant matter such as rice hulls or straw by leaching with sulfuric acid to remove non-silica minerals and metal while adjusting...
8043592 Cascaded power plant process and method for providing reversibly usable hydrogen carriers in such a power plant process  
In a series of reactions for power plant energy generation designed to make beneficial use of oil bearing sands, oil bearing shale and other starting materials containing silicon dioxide, the...
8013343 Silicon carbide single crystal, silicon carbide substrate and manufacturing method for silicon carbide single crystal  
SiC single crystal that includes a first dopant functioning as an acceptor, and a second dopant functioning as a donor is provided, where the content of the first dopant is no less than 5×1015...
7964171 Process for producing silicon carbide ceramic micro tube with thin wall  
An improved process for producing a silicon carbide ceramic micro tubes (SiC micro tube) from a silicon-based polymer fiber by applying an ionizing radiation such that the surface part of the...
7959887 Method for manufacturing a diamond composite  
A method for manufacturing a diamond composite, includes: a) mixing diamonds with additives, the mixture comprising at least 50 wt % and less than 95 wt % of diamonds and more than 5 wt %...
7939044 Method of manufacturing sub-micron silicon-carbide powder  
A method of manufacturing a silicon carbide powder with submicron size of powder particles wherein a homogeneous reactant mixture comprising a source of silicone, a source of carbon, and...
7931853 System, method, and apparatus for conversion bonding of precursor subcomponents into a unitary monolith  
A process for converting precursor objects into a unitary ceramic object produces, for example, a ceramic, optical scan mirror that is formed from at least two pieces. An optical section has at...
7910082 Synthesis of ordered mesoporous carbon-silicon nanocomposites  
A method for preparing ordered mesoporous silicon carbide (OMSiC) nanocomposites uses an evaporation-induced self-assembly of a precursor composition that preferably includes a phenolic resin,...
7897534 Manufacture and use of engineered carbide and nitride composites  
Precursor materials and methods of making are disclosed. The precursor materials include at least one of a silica source, and a carbon source, with or without liquid and a binder The methods...
7893182 Manufacture of resins  
A method of forming a powder and/or discrete gel particles of a compound selected from the group of a metallic oxide, a metalloid oxide, a mixed oxide, an organometallic oxide, an organometalloid...
7855385 SiC crystal and semiconductor device  
The present invention discloses a SiC crystal, comprising: acceptor impurities that are in a concentration greater than 5×1017 cm−3; donor impurities that are in a concentration less than 1×1019...
7829050 Methods of forming single-crystal metal-silicide nanowires and resulting nanowire structures  
Various embodiments of the present invention are directed to methods of forming single-crystal metal-silicide nanowires and resulting nanowire structures. In one embodiment of the present...
7807123 Method of manufacturing silicon carbide  
A method of manufacturing silicon carbide including reacting, in a temperature range of 370 to 800° C., (A) one selected from the group consisting of an alloy containing at least an Si element and...
7799305 Silicon carbide single crystal and single crystal wafer  
The present invention provides a semi-insulating silicon carbide single crystal characterized by having an electrical resistivity at room temperature of 1×105 Ωcm or more, and a semi-insulating...

Matches 1 - 50 out of 450 1 2 3 4 5 6 7 8 9 >